TK5A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)

TK5A50D
Switching Regulator Applications
Unit: mm

Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.)

High forward transfer admittance: Yfs = 3.0 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 500 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 500 V

Gate-source voltage VGSS 30 V
DC (Note 1) ID 5
Drain current Pulse (t = 1 ms) A
IDP 20
(Note 1)
1: Gate
Drain power dissipation (Tc = 25C) PD 35 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 150 mJ
(Note 2) JEDEC
Avalanche current IAR 5 A JEITA SC-67
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
TOSHIBA 2-10U1B
Channel temperature Tch 150 C
Weight : 1.7 g (typ.)
Storage temperature range Tstg 55 to 150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Internal Connection
Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.57 C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W

Note 1: Ensure that the channel temperature does not exceed 150C. 1

Note 2: VDD = 90 V, Tch = 25C (initial), L = 10.2 mH, RG = 25 , IAR = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care. 3

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 30 V, VDS = 0 V 1 A

Drain cut-off current IDSS VDS = 500 V, VGS = 0 V 10 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 4.4 V
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 2.5 A 1.3 1.5
Forward transfer admittance Yfs VDS = 10 V, ID = 2.5 A 0.8 3.0 S
Input capacitance Ciss 490
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 3 pF

Output capacitance Coss 55

10 V ID = 2.5 A VOUT
Rise time tr VGS 18
0V
Turn-on time ton RL = 40
50
Switching time 80 ns
Fall time tf 8
VDD 200 V

Turn-off time toff Duty 1%, tw = 10 s 55

Total gate charge Qg 11

Gate-source charge Qgs VDD 400 V, VGS = 10 V, ID = 5 A 6 nC

Gate-drain charge Qgd 5

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR 5 A

Pulse drain reverse current (Note 1) IDRP 20 A

Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 5 A, VGS = 0 V, 1000 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 5.0 C

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K5A50D Part No. (or abbreviation code)
Lot No. Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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 TK5A50D

ID VDS ID VDS
5 10
COMMON SOURCE 10 7 COMMON SOURCE
10 8
Tc = 25C Tc = 25C
8
PULSE TEST PULSE TEST
(A)

(A)
4 8
6.5
DRAIN CURRENT ID

DRAIN CURRENT ID
7
3 6

6
6.5
2 4

5.5 6
1 2
VGS = 5 V
VGS = 5 V

0 0
0 2 4 6 8 10 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID VGS VDS VGS

10 20
VDS (V)

COMMON SOURCE COMMON SOURCE

VDS = 20 V Tc = 25
PULSE TEST PULSE TEST
(A)

8 16
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

6 12

ID = 5 A
4 8
25

2 100 4 2.5
Tc = 55 C
1.2

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yfs ID RDS (ON) ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 10 V Tc = 25C
PULSE TEST PULSE TEST

Tc = 55 C
RDS (ON) ()

VGS = 10, 15 V
Yfs (S)

25
1 100 1

0.1 0.1
0.1 1 10 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) Tc IDR VDS

5 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON-RESISTANCE

VGS = 10 V Tc = 25C

DRAIN REVERSE CURRENT

PULSE TEST PULSE TEST
4
RDS (ON) ( )

IDR (A)
5
1
2.5
2
ID = 1.2 A

10,15
1

5 3 VGS = 0, 1 V
1
0 0.1
80 40 0 40 80 120 160 0 0.3 0.6 0.9 1.2 1.5

CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE VDS Vth Tc

10000 5
GATE THRESHOLD VOLTAGE
(pF)

4
1000
Ciss
C

3
Vth (V)
CAPACITANCE

100
Coss
2

10 COMMON SOURCE
COMMON SOURCE 1 VDS = 10 V
VGS = 0 V Crss
ID = 1 mA
f = 1 MHz
PULSE TEST
Tc = 25C
1 0
0.1 1 10 100 80 40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C)

DYNAMIC INPUT / OUTPUT

PD Tc CHARACTERISTICS
50 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VDS
VGS

40 400 200
16
DRAIN-SOURCE VOLTAGE

VDD = 100 V
GATE-SOURCE VOLTAGE

30 300 400 12
PD (W)

20 200 8
VGS COMMON SOURCE
ID = 5 A
10 Tc = 25C 4
100
PULSE TEST

0 0 0
0 40 80 120 160 0 4 8 12 16 20

CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC)

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rth tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1
Duty=0.5

0.2
0.1
0.1
0.05
0.02 PDM
Single pulse t
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.57C/W
0.001
10 100 1m 10m 100m 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS Tch

100 200

ID max (pulsed) *
160
AVALANCHE ENERGY

100 s *
10
ID max (continuous) *
(A)

EAS (mJ)

1 ms * 120
ID

1 DC operation
Tc = 25C 80
DRAIN CURRENT

40
0.1

0
*: SINGLE NONREPETITIVE PULSE 25 50 75 100 125 150
0.01 Tc = 25C
CURVES MUST BE DERATED CHANNEL TEMPEATURE (INITIAL)
LINEARLY WITH INCREASE IN Tch(C)
TEMPERATURE.

0.001 BVDSS
0.1 1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
15 V
VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 10.2 mH 2 B V
VDSS DD

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