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    zx5t953 PDF

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    Fidel Arroyo
    ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A FEATURES 5 amps continuous current Up to 10 amps peak current Very low saturation voltages.

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    zx5t953 PDF

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    Fidel Arroyo
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    ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A FEATURES 5 amps continuous current Up to 10 amps peak current Very low saturation voltages.

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    ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A FEATURES 5 amps continuous current Up to 10 amps peak current Very low saturation voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    162 views6 pages

    zx5t953 PDF

    Uploaded by

    Fidel Arroyo
    ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A FEATURES 5 amps continuous current Up to 10 amps peak current Very low saturation voltages.

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    © All Rights Reserved
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    of 6

    ZX5T953G

    100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223


    SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION
    Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

    FEATURES
    5 amps continuous current Up to 10 amps peak current Very low saturation voltages

    SOT223

    APPLICATIONS
    Motor driving Line switching High side switches Subscriber line interface cards (SLIC)

    ORDERING INFORMATION
    DEVICE ZX5T953GTA ZX5T953GTC REEL SIZE 7 13 TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units 4000 units

    PINOUT

    DEVICE MARKING
    X5T953

    TOP VIEW

    ISSUE 2 - SEPTEMBER 2003 1


    SEMICONDUCTORS

    ZX5T953G
    ABSOLUTE MAXIMUM RATINGS
    PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -140 -100 -7 -5 -10 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C

    THERMAL RESISTANCE
    PARAMETER Junction to ambient
    (a)

    SYMBOL R JA

    VALUE 42

    UNIT C/W

    NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

    ISSUE 2 - SEPTEMBER 2003


    SEMICONDUCTORS

    ZX5T953G
    CHARACTERISTICS

    ISSUE 2 - SEPTEMBER 2003 3


    SEMICONDUCTORS

    ZX5T953G
    ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
    PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R 1k I EBO V CE(SAT) 1 -20 -70 -120 -240 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 100 100 25 15 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF -985 -920 250 200 50 30 5 125 42 42 540 300 MIN. -140 -140 -100 -7 TYP. -160 -160 -115 -8.1 1 1 -20 -0.5 -20 -0.5 -10 -30 -90 -150 -340 -1100 -1050 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV I C =-100 A I C =-1 A, RB 1k I C =-10mA* I E =-100 A V CB =-100V VCB=-100V,Tamb=100C V CB =-100V VCB=-100V,Tamb=100C V EB =-6V I C =-0.1A, I B =-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* I C =-4A, I B =-400mA* I C =-4A, V CE =-2V* I C =-10mA, V CE =-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* MHz IC =-100mA, VCE =-10V f=50MHz pF ns V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA

    * Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.

    ISSUE 2 - SEPTEMBER 2003


    SEMICONDUCTORS

    ZX5T953G
    TYPICAL CHARACTERISTICS

    ISSUE 2 - SEPTEMBER 2003 5


    SEMICONDUCTORS

    ZX5T953G
    PACKAGE OUTLINE PAD LAYOUT DETAILS

    Controlling dimensions are in millimeters. Approximate conversions are given in inches

    PACKAGE DIMENSIONS
    Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches

    Zetex plc 2003


    Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] Zetex GmbH Streitfeldstrae 19 D-81673 Mnchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected]

    These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to

    www.zetex.com ISSUE 2 - SEPTEMBER 2003

    SEMICONDUCTORS

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