BUL312FP: High Voltage Fast-Switching NPN Power Transistor

BUL312FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s s s s
HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
1 2
APPLICATIONS HORIZONTAL DEFLECTION FOR TV s SMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
s
TO-220FP
DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 1500 -65 to 150 150 Unit V V V A A A A W V
o o
C C
March 2004
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BUL312FP
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.5 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1150 V V CE = 1150 V V CE = 500 V I C = 100 mA L= 25 mH 500 Tj = 125 o C Min. Typ. Max. 1 2 250 Unit mA mA A V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time
I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IC = 3 A I C = 10 mA IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A I B = 0.2 A I B = 0.4 A I B = 0.6 A V CE = 5 V V CE = 2.5 V I B1 = 0.4 A R BB = 0 L = 200 H I B1 = 0.4 A R BB = 0 L = 200 H (see fig. 1)
10 0.5 0.7 1.1 1 1.1 1.2 8 8 1.2 80 13.5 1.9 160
V V V V V V V
V BE(sat)
h FE
ts tf
IC = 2 A V BE(off) = -5 V V CL = 250 V (see fig. 1) IC = 2 A V BE(off) = -5V V CL = 250 V T j = 125 o C
s ns
ts tf
1.8 150
s ns
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
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BUL312FP
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
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BUL312FP
Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit
(1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier
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BUL312FP
TO-220FP MECHANICAL DATA

DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
L3 L6 L7
F1
G1
E F2
1 2 3 L2 L4
G
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BUL312FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. 2004 STMicroelectronics All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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BUL312FP

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

10 0.5 0.7 1.1 1 1.1 1.2 8 8 1.2 80 13.5 1.9 160

IC = 2 A V BE(off) = -5 V V CL = 250 V (see fig. 1) IC = 2 A V BE(off) = -5V V CL = 250 V T j = 125 o C

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Areas

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Inductive Fall Time

Inductive Storage Time

TO-220FP MECHANICAL DATA

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