Fdms0308Cs: N-Channel Powertrench Syncfet

FDMS0308CS N-Channel PowerTrench SyncFETTM
August 2010
FDMS0308CS
N-Channel PowerTrench SyncFETTM
30 V, 42 A, 3 m: Features General Description
The FDMS0308CS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Desktop
Top
Bottom Pin 1 S
D
S S G
5 6 7 8
4 G 3
D D
2 S 1
D
D D
Power 56
MOSFET Maximum Ratings TC = 25 C unless otherwise noted

Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) (Note 4) Ratings 30 20 42 113 22 150 98 65 2.5 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.9 50 C/W
Package Marking and Ordering Information

Device Marking FDMS0308CS Device FDMS0308CS Package Power 56
1
Reel Size 13
Tape Width 12 mm
Quantity 3000 units

www.fairchildsemi.com
2010 Fairchild Semiconductor Corporation FDMS0308CS Rev.C
Electrical Characteristics TA = 25 C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 1 mA, VGS = 0 V ID = 10 mA, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 14 500 100 V mV/C PA nA
On Characteristics (Note 2)
VGS(th) 'VGS(th) 'TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient StaticDrain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 17 A VGS = 10 V, ID = 21 A, TJ = 125 C VDS = 5 V, ID = 21 A 1.2 1.6 -5 1.9 2.5 2.5 300 3.0 3.5 3.8 S m: 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 3175 1175 110 1.3 4225 1565 165 2.6 pF pF pF :
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Miller Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 21 A VDD = 15 V, ID = 21 A, VGS = 10 V, RGEN = 6 : 14 6 35 5 47 22 8.5 4.9 25 12 56 10 66 31 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics

VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2 A VGS = 0 V, IS = 21 A (Note 2) (Note 2) 0.43 0.75 35 41 0.7 1.2 56 67 V ns nC
IF = 21 A, di/dt = 300 A/ Ps
Notes: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. EAS of 98 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS0308CS Rev.C
Typical Characteristics TJ = 25 C unless otherwise noted

150
VGS = 3.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
3.5 3.0
VGS = 3 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
120
ID, DRAIN CURRENT (A) VGS = 10 V
90 60 30
VGS = 4.5 V VGS = 4 V VGS = 3 V
2.5
VGS = 3.5 V
2.0
VGS = 4 V
1.5
VGS = 4.5 V
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
1.0
VGS = 10 V
0 0.0
0.5 0 30 60 90 120 150

ID, DRAIN CURRENT (A)
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage

10
SOURCE ON-RESISTANCE (m:)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75
ID = 21 A VGS = 10 V
ID = 21 A
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
8 6 4 2
TJ = 25 oC
rDS(on), DRAIN TO
TJ = 125 oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature

150 120
ID, DRAIN CURRENT (A) VDS = 5 V
IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage

200 100 10
TJ = 125 oC
VGS = 0 V
90
TJ = 125 oC
1 0.1 0.01
TJ = 25 oC
60
TJ = 25 oC
30
TJ = -55 oC
TJ = -55 oC
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMS0308CS Rev.C

10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 21 A
5000
Ciss Coss
8
VDD = 10 V VDD = 20 V CAPACITANCE (pF)
6
VDD = 15 V
1000
4 2
Crss
100 f = 1 MHz
VGS = 0 V
0 0 10 20 30 40 50
Qg, GATE CHARGE (nC)
60 0.1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage

120
VGS = 10 V
40
IAS, AVALANCHE CURRENT (A)
TJ = 25 oC
90
VGS = 4.5 V
10
TJ = 100 oC
60
TJ = 125 oC
30
Limited by Package RTJC = 1.9 C/W
o
1 0.01
0.1
10
100 300
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability

200 100
Figure 10. Maximum Continuous Drain Current vs Case Temperature

100 Ps
10000
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10 V
10
1 ms 10 ms
1000
THIS AREA IS LIMITED BY rDS(on)
100
100 ms 1s 10 s DC
0.1
SINGLE PULSE TJ = MAX RATED RTJA = 125 oC/W TA = 25 oC
10
SINGLE PULSE RTJA = 125 oC/W
0.01 0.01
0.1
10
100 200
1 TA = 25 oC 0.5 -4 -3 -2 10 10 10
10
-1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMS0308CS Rev.C

2 1
NORMALIZED THERMAL IMPEDANCE, ZTJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2
0.001
SINGLE PULSE RTJA = 125 C/W
o
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA

-1
0.0001 -4 10
10
-3
10
-2
10
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMS0308CS Rev.C
Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics
Fairchilds SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS0308CS.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
25 20
CURRENT (A)
10
-2
TJ = 125 oC TJ = 100 oC
10
-3
15
di/dt = 300 A/Ps
10 5 0 -5 0 30 60
TIME (ns)
10
-4
TJ = 25 oC
10
-5
10
-6
90
120
150
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS0308CS SyncFET body diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses leakage versus drain-source voltage
FDMS0308CS Rev.C
Dimensional Outline and Pad Layout
FDMS0308CS Rev.C
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM AccuPower F-PFS * PowerTrench Auto-SPM FRFET SM Build it Now Global Power Resource PowerXS The Power Franchise CorePLUS Programmable Active Droop Green FPS CorePOWER QFET Green FPS e-Series CROSSVOLT QS Gmax TinyBoost CTL Quiet Series GTO TinyBuck Current Transfer Logic RapidConfigure IntelliMAX TinyCalc DEUXPEED ISOPLANAR TinyLogic Dual Cool MegaBuck TINYOPTO Saving our world, 1mW/W/kW at a time EcoSPARK MICROCOUPLER TinyPower EfficentMax SignalWise MicroFET TinyPWM SmartMax ESBC MicroPak TinyWire SMART START MicroPak2 TriFault Detect SPM MillerDrive TRUECURRENT* STEALTH MotionMax Fairchild PSerDes SuperFET Motion-SPM Fairchild Semiconductor SuperSOT-3 OptiHiT FACT Quiet Series SuperSOT-6 OPTOLOGIC FACT UHC OPTOPLANAR SuperSOT-8 FAST Ultra FRFET SupreMOS FastvCore UniFET SyncFET FETBench VCX Sync-Lock FlashWriter * PDP SPM VisualMax FPS XS
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I48
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMS0308CS Rev.C

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FDMS0308CS N-Channel PowerTrench SyncFETTM

MOSFET Maximum Ratings TC = 25 C unless otherwise noted

Operating and Storage Junction Temperature Range

Package Marking and Ordering Information

Quantity 3000 units

2010 Fairchild Semiconductor Corporation FDMS0308CS Rev.C