Si4810BDY: Vishay Siliconix

Si4810BDY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
10 8
rDS(on) (W)
0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V
D TrenchFETr Power MOSFETS D Fast Switching Speed D Low Gate Charge
APPLICATIONS
D DC-DC Logic Level D Low Voltage and Battery Powered Applications
SCHOTTKY PRODUCT SUMMARY

VDS (V)
30
Diode Forward Voltage VSD (V)

0.53 V @ 3.0 A
IF (A)
3.8
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET S Ordering Information: Si4810BDY Si4810BDY-T1 (with Tape and Reel) G Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IF IFM
10 sec
30 30 "20 10 8 50 2.3 3.8 40 2.5 1.6 2.0 1.3
Steady State
Unit
V
7.5 6 A 1.25 2.4 1.38 0.88 1.31 0.84 - 55 to 150 _C W
THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction Junction-to-Ambient to Ambient (t v 10 sec)a
Device
MOSFET Schottky MOSFET
Symbol
Typical
36 44
Maximum
50 60 90 95 21 30
Unit
RthJA
73 77 17
M i Maximum Junction-to-Ambient J ti t A bi t (t = steady t d state) t t )a
Schottky MOSFET RthJF
_C/W
M i Maximum Junction-to-Foot J ti t F t (t = steady t d state) t t )a Notes a. Surface Mounted on FR4 Board.
Schottky
24
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72229 S-31063Rev. A, 26-May-03 www.vishay.com
Si4810BDY
Vishay Siliconix
New Product
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea IDSS VDS = 24 V, VGS = 0 V, TJ = 100_C VDS = 24 V, VGS = 0 V, TJ = 125_C ID(on) rDS(on) gfs VSD VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.0105 0.016 25 0.485 0.420 0.53 0.47 V 0.0135 0.020 W S 0.007 1.5 6.5 1 3 "100 0.100 10 20 A mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistnce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5 V, ID = 10 A 14.5 6.3 4.7 0.55 17 13 45 15 36 30 20 90 25 70 ns W 22 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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Document Number: 72229 S-31063Rev. A, 26-May-03
Si4810BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50
Vishay Siliconix
Transfer Characteristics
30 4V 20
30
20 TC = 125_C 10 25_C
10 3V 0 0 1 2 3 4 5
- 55_C 0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current

0.040 r DS(on) - On-Resistance ( W ) 2500
Capacitance
Ciss (MOSFET) C - Capacitance (pF) 0.032 2000
0.024 VGS = 4.5 V 0.016 VGS = 10 V
1500
1000
Coss (MOSFET + Schottky)
0.008
500
Crss (MOSFET)
0.000 0 10 20 30 40 50
0 0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) (Normalized) VDS = 15 V ID = 10 A 1.6
On-Resistance vs. Junction Temperature

VGS = 10 V ID = 10 A 1.4
1.2
1.0
0.8
0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
25
50
75
100
125
150
TJ - Junction Temperature (_C)
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Si4810BDY
Vishay Siliconix
New Product

Source-Drain Diode Forward Voltage
50 0.06
On-Resistance vs. Gate-to-Source Voltage
10 TJ = 150_C TJ = 25_C
r DS(on) - On-Resistance ( W )
0.05
I S - Source Current (A)
0.04 ID = 9.0 A 0.03
0.02
0.01
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky)

30 10 40 I R - Reverse Curent (mA) 1 Power (W) 30 V 0.1 10 V 0.01 20 V 0.001 30 50
Single Pulse Power
20
10
0.0001
25
50
75
100
125
150
0 0.01 0.1 1 Time (sec) 10 100 1000
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Case

100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100
0.1
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Si4810BDY
New Product
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Vishay Siliconix
0.2
Notes:
0.1 0.1 0.05

t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W
t1 t2
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
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Si4810BDY

N-Channel 30-V (D-S) MOSFET with Schottky Diode

D TrenchFETr Power MOSFETS D Fast Switching Speed D Low Gate Charge

SCHOTTKY PRODUCT SUMMARY

Diode Forward Voltage VSD (V)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

7.5 6 A 1.25 2.4 1.38 0.88 1.31 0.84 - 55 to 150 _C W

THERMAL RESISTANCE RATINGS

M i Maximum Junction-to-Ambient J ti t A bi t (t = steady t d state) t t )a

Schottky MOSFET RthJF

M i Maximum Junction-to-Foot J ti t F t (t = steady t d state) t t )a Notes a. Surface Mounted on FR4 Board.

MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Document Number: 72229 S-31063Rev. A, 26-May-03

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Ciss (MOSFET) C - Capacitance (pF) 0.032 2000

0.024 VGS = 4.5 V 0.016 VGS = 10 V

Coss (MOSFET + Schottky)

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC)

TJ - Junction Temperature (_C)

Document Number: 72229 S-31063Rev. A, 26-May-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Gate-to-Source Voltage

I S - Source Current (A)

0.04 ID = 9.0 A 0.03

0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)

Reverse Current (Schottky)

Single Pulse Power

0 0.01 0.1 1 Time (sec) 10 100 1000

Safe Operating Area, Junction-to-Case

VDS - Drain-to-Source Voltage (V)

Document Number: 72229 S-31063Rev. A, 26-May-03

0.1 0.1 0.05

2. Per Unit Base = RthJA = 70_C/W

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)

3. TJM - TA = PDMZthJA(t) 4. Surface Mounted

Normalized Thermal Transient Impedance, Junction-to-Foot

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10

Document Number: 72229 S-31063Rev. A, 26-May-03

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