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    Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC4886)

    Uploaded by

    Edgar Godoy
    This document provides specifications for a silicon PNP epitaxial planar transistor (complement to type 2SC4886). It includes: 1) Absolute maximum ratings and electrical characteristics such as voltage, current, and frequency ratings. 2) External dimensions of the transistor package. 3) Typical switching, thermal, and electrical performance characteristics graphs showing properties like saturation voltage, gain, and frequency over varying conditions. 4) Notes on part numbering and maximum power derating with increasing ambient temperature.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC4886)

    Uploaded by

    Edgar Godoy
    19 views1 page
    This document provides specifications for a silicon PNP epitaxial planar transistor (complement to type 2SC4886). It includes: 1) Absolute maximum ratings and electrical characteristics such as voltage, current, and frequency ratings. 2) External dimensions of the transistor package. 3) Typical switching, thermal, and electrical performance characteristics graphs showing properties like saturation voltage, gain, and frequency over varying conditions. 4) Notes on part numbering and maximum power derating with increasing ambient temperature.

    Original Title

    2sa1860e

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    © Attribution Non-Commercial (BY-NC)

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    This document provides specifications for a silicon PNP epitaxial planar transistor (complement to type 2SC4886). It includes: 1) Absolute maximum ratings and electrical characteristics such as voltage, current, and frequency ratings. 2) External dimensions of the transistor package. 3) Typical switching, thermal, and electrical performance characteristics graphs showing properties like saturation voltage, gain, and frequency over varying conditions. 4) Notes on part numbering and maximum power derating with increasing ambient temperature.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    19 views1 page

    Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC4886)

    Uploaded by

    Edgar Godoy
    This document provides specifications for a silicon PNP epitaxial planar transistor (complement to type 2SC4886). It includes: 1) Absolute maximum ratings and electrical characteristics such as voltage, current, and frequency ratings. 2) External dimensions of the transistor package. 3) Typical switching, thermal, and electrical performance characteristics graphs showing properties like saturation voltage, gain, and frequency over varying conditions. 4) Notes on part numbering and maximum power derating with increasing ambient temperature.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 1

    LAPT

    2SA1860
    Application : Audio and General Purpose
    (Ta=25C) Ratings 100max 100max 150min 50min 2.0max 50typ 400typ V MHz
    16.2

    Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25C)
    Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 14 3 80(Tc=25C) 150 55 to +150 Unit V V V A A W C C

    sElectrical Characteristics
    Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=2A VCB=10V, f=1MHz

    External Dimensions FM100(TO3PF)


    0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6

    Unit

    A
    23.00.3

    9.50.2

    a b

    pF

    1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1

    3.3

    0.8

    hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

    sTypical Switching Characteristics (Common Emitter)


    VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 500 IB2 (mA) 500 ton (s) 0.25typ tstg (s) 0.85typ tf (s) 0.2typ

    3.35

    Weight : Approx 6.5g a. Part No. b. Lot No.

    I C V CE Characteristics (Typical)
    14 Collector-Emitter Saturation Voltage V C E (s at) (V )
    A m mA mA mA 00 500 400 00 3 6

    V CE ( sat ) I B Characteristics (Typical)


    3

    I C V BE Temperature Characteristics (Typical)


    14 (V C E =4V)

    00

    mA

    200

    mA

    Collector Current I C (A)

    1 50 m A
    10
    100 mA

    Collector Current I C (A)

    10

    p)

    Tem

    p)

    se

    50mA

    C (C

    125

    0.2

    0.4

    0.6

    0.8

    1.0

    30

    5A

    25

    I B =20mA

    1 Base-Emittor Voltage V B E (V)

    C (

    Cas

    I C =10A

    (Ca

    ase

    eT

    Tem

    emp

    Collector-Emitter Voltage V C E (V)

    Base Current I B (A)

    (V C E =4V) 200 DC Cur rent Gain h FE DC Cur rent Gain h FE

    (V C E =4V) 200 125C

    j- a ( C/W)

    h FE I C Characteristics (Typical)

    h FE I C Temperature Characteristics (Typical)

    j-a t Characteristics
    3

    100

    Typ

    Transient Thermal Resistance

    100

    25C 30C

    1 0.5

    50

    50

    20 0.02

    0.1

    0.5

    10 14

    30 0.02

    0.1

    0.5

    10 14

    0.1

    10

    100 Time t(ms)

    1000 2000

    Collector Current I C (A)

    Collector Current I C (A)

    f T I E Characteristics (Typical)
    (V C E =12V) 80 40

    Safe Operating Area (Single Pulse)


    80
    1m s

    P c T a Derating

    Cu t-off Fre quen cy f T (M H Z )

    10 60 Collect or Cur ren t I C (A)

    10

    0m

    M aximum Power Dissipa ti on P C (W)

    10
    s

    60

    Typ

    40

    40

    1 0.5 Without Heatsink Natural Cooling 0.1

    20

    20

    Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150

    0 0.02

    0.1

    10

    0.05 2

    Emitter Current I E (A)

    Collector-Emitter Voltage V C E (V)

    Ambient Temperature Ta(C)

    34

    3.0

    W ith In fin ite he at si nk

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