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    Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2390)

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    9183290782
    This document provides specifications and ratings for a silicon PNP epitaxial planar transistor (type 2SB1560) intended for audio and regulator applications. The transistor is housed in a TO-3P package and can handle currents up to 7A and voltages up to 150V. Key parameters include a minimum current gain of 5000 at 4V and 7A, saturation voltages below 3V, and operating temperatures from -55°C to 150°C. Electrical characteristics are provided showing performance variations with current, voltage, temperature and frequency.

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    Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2390)

    Uploaded by

    9183290782
    53 views1 page
    This document provides specifications and ratings for a silicon PNP epitaxial planar transistor (type 2SB1560) intended for audio and regulator applications. The transistor is housed in a TO-3P package and can handle currents up to 7A and voltages up to 150V. Key parameters include a minimum current gain of 5000 at 4V and 7A, saturation voltages below 3V, and operating temperatures from -55°C to 150°C. Electrical characteristics are provided showing performance variations with current, voltage, temperature and frequency.

    Original Description:

    DATASHEET

    Original Title

    2sb1560_ds_en

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    This document provides specifications and ratings for a silicon PNP epitaxial planar transistor (type 2SB1560) intended for audio and regulator applications. The transistor is housed in a TO-3P package and can handle currents up to 7A and voltages up to 150V. Key parameters include a minimum current gain of 5000 at 4V and 7A, saturation voltages below 3V, and operating temperatures from -55°C to 150°C. Electrical characteristics are provided showing performance variations with current, voltage, temperature and frequency.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    53 views1 page

    Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD2390)

    Uploaded by

    9183290782
    This document provides specifications and ratings for a silicon PNP epitaxial planar transistor (type 2SB1560) intended for audio and regulator applications. The transistor is housed in a TO-3P package and can handle currents up to 7A and voltages up to 150V. Key parameters include a minimum current gain of 5000 at 4V and 7A, saturation voltages below 3V, and operating temperatures from -55°C to 150°C. Electrical characteristics are provided showing performance variations with current, voltage, temperature and frequency.

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    of 1

    (7 0 ) E

    2SB1560

    Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)

    Ratings

    Unit

    ICBO

    VCB=160V

    100max

    VCEO

    150

    IEBO

    VEB=5V

    100max

    A
    V

    V(BR)CEO

    IC=30mA

    150min

    10

    hFE

    VCE=4V, IC=7A

    5000min

    IB

    VCE(sat)

    IC=7A, IB=7mA

    2.5max

    PC

    100(Tc=25C)

    VBE(sat)

    IC=7A, IB=7mA

    3.0max

    Tj

    150

    fr

    VCE=12V, IE=2A

    50typ

    MHz

    55 to +150

    VCB=10V, f=1MHz

    230typ

    pF

    COB

    4.0

    IC

    19.90.3

    VEBO

    Tstg

    15.60.4
    9.6

    1.8

    Conditions

    5.00.2

    Unit

    160

    2.0

    Ratings

    Symbol

    External Dimensions MT-100(TO3P)

    (Ta=25C)

    VCBO

    Symbol

    Application : Audio, Series Regulator and General Purpose

    Electrical Characteristics

    (Ta=25C)

    Equivalent circuit

    4.80.2
    2.00.1

    3.20.1

    4.0max

    Absolute maximum ratings

    20.0min

    Darlington

    3
    1.05 +0.2
    -0.1

    0.65 +0.2
    -0.1

    hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)


    5.450.1

    Typical Switching Characteristics (Common Emitter)


    VCC
    (V)

    RL
    ()

    IC
    (A)

    VBB1
    (V)

    VBB2
    (V)

    IB1
    (mA)

    IB2
    (mA)

    ton
    (s)

    tstg
    (s)

    tf
    (s)

    70

    10

    10

    0.8typ

    3.0typ

    1.2typ

    0
    0.2

    0.5 1

    Collector-Emitter Voltage V C E (V)

    10

    h FE I C Temperature Characteristics (Typical)


    (V C E =4V)
    50000
    DC Curr ent Gain h F E

    DC Curr ent Gain h F E

    40,000

    Typ

    10,000
    5,000

    125C
    10000

    25C

    5000

    30C

    1000
    1

    10

    500
    0.2

    0.5

    Collector Current I C (A)

    10

    10

    0.1

    10

    500 1000 2000

    P c T a Derating
    100

    10
    DC

    10

    0m

    ite
    he

    50

    at
    si
    nk

    Without Heatsink
    Natural Cooling

    fin

    0.5

    In

    20

    50 100
    Time t(ms)

    ith

    40

    0.5

    Typ

    Temp

    Maxim um Power Dissipation P C (W)

    80
    Co lle ctor Cu rre nt I C ( A)

    30

    2.5

    Safe Operating Area (Single Pulse)

    100

    j-a t Characteristics

    (V C E =12V)

    Cut- off F req uency f T (M H Z )

    Collector Current I C (A)

    f T I E Characteristics (Typical)

    60

    Base-Emittor Voltage V B E (V)

    (V C E =4V)

    0.5

    50 100 200

    Base Current I B (mA)

    h FE I C Characteristics (Typical)

    1,000
    0.2

    Temp

    7A
    I C =5A
    1

    (Case

    10A

    30C

    I B =0.4mA

    mp)

    0.6m A

    (Case

    0.8m A

    (V C E =4V)

    25C

    1.0 mA

    Transient Thermal Resistance

    Collector Current I C (A)

    1. 2mA

    10

    e Te

    1 .5m A

    (Cas

    mA

    I C V BE Temperature Characteristics (Typical)

    125C

    2 .0

    1.4

    V CE ( sat ) I B Characteristics (Typical)

    Collector Current I C (A)

    Weight : Approx 6.0g


    a. Part No.
    b. Lot No.

    j - a ( C/W)

    10

    mA

    10

    A
    5m

    Collector-Emitter Saturation Voltage V C E (s at ) (V )

    I C V CE Characteristics (Typical)

    5.450.1
    B

    0.1
    0
    0.02

    0.05 0.1

    0.5

    Emitter Current I E (A)

    48

    10

    0.05
    3

    10

    50

    100

    Collector-Emitter Voltage V C E (V)

    200

    3.5
    0

    Without Heatsink
    0

    25

    50

    75

    100

    125

    Ambient Temperature Ta(C)

    150

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