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    Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC3856)

    Uploaded by

    Thilakshana Thilina
    This document provides specifications for a silicon PNP epitaxial planar transistor. It lists maximum ratings, electrical characteristics under various conditions, typical DC and switching characteristics, and thermal characteristics including transient thermal resistance and derating curves. The transistor has a minimum current gain of 50 at collector current of 3A and collector-emitter voltage of -4V, and can operate from -55°C to +150°C.

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    © All Rights Reserved
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    Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC3856)

    Uploaded by

    Thilakshana Thilina
    18 views1 page
    This document provides specifications for a silicon PNP epitaxial planar transistor. It lists maximum ratings, electrical characteristics under various conditions, typical DC and switching characteristics, and thermal characteristics including transient thermal resistance and derating curves. The transistor has a minimum current gain of 50 at collector current of 3A and collector-emitter voltage of -4V, and can operate from -55°C to +150°C.

    Original Description:

    2sasa1492 data sheett

    Original Title

    2sa1492_ds_en

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    This document provides specifications for a silicon PNP epitaxial planar transistor. It lists maximum ratings, electrical characteristics under various conditions, typical DC and switching characteristics, and thermal characteristics including transient thermal resistance and derating curves. The transistor has a minimum current gain of 50 at collector current of 3A and collector-emitter voltage of -4V, and can operate from -55°C to +150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views1 page

    Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC3856)

    Uploaded by

    Thilakshana Thilina
    This document provides specifications for a silicon PNP epitaxial planar transistor. It lists maximum ratings, electrical characteristics under various conditions, typical DC and switching characteristics, and thermal characteristics including transient thermal resistance and derating curves. The transistor has a minimum current gain of 50 at collector current of 3A and collector-emitter voltage of -4V, and can operate from -55°C to +150°C.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    2SA1492

    Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)

    100max

    IEBO

    VEB=6V

    100max

    IC=50mA

    180min

    V(BR)CEO

    15

    hFE

    VCE=4V, IC=3A

    50min

    VCE(sat)

    IC=5A, IB=0.5A

    2.0max

    PC

    130(Tc=25C)

    fT

    VCE=12V, IE=0.5A

    20typ

    MHz

    Tj

    150

    COB

    VCB=10V, f=1MHz

    500typ

    pF

    55 to +150

    hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)


    5.450.1

    RL
    ()

    IC
    (A)

    VBB1
    (V)

    VBB2
    (V)

    IB1
    (A)

    IB2
    (A)

    ton
    (s)

    tstg
    (s)

    tf
    (s)

    40

    10

    10

    0.6typ

    0.9typ

    0.2typ

    I B =20mA

    I C =10A

    0.5

    1.0

    1.5

    h FE I C Temperature Characteristics (Typical)


    (V C E =4V)
    200

    100
    50

    125C
    25C

    100

    30C

    50

    20
    0.02

    5 10 15

    f T I E Characteristics (Typical)

    0.1

    0.5

    10

    0.1

    10

    P c T a Derating

    100

    Collector-Emitter Voltage V C E (V)

    200

    nk

    10

    si

    0.1
    3

    Without Heatsink
    Natural Cooling

    at

    0.5

    he

    100

    ite

    Collector Cur rent I C (A)

    0m

    fin

    10

    In

    10

    1000 2000

    ith

    20

    100
    Time t(ms)

    10

    Typ

    20

    0.5

    M aximum Power Dissipa ti on P C ( W)

    3m

    Emitter Current I E (A)

    10 15

    130

    10

    40

    30

    j-a t Characteristics

    Safe Operating Area (Single Pulse)

    (V C E =12V)

    0.1

    Collector Current I C (A)

    Collector Current I C (A)

    0
    0.02

    Transient Thermal Resistance

    DC Curr ent Gain h FE

    Typ

    Cut- off F re quen cy f T (MH Z )

    DC Curr ent Gain h FE

    300

    Base-Emittor Voltage V B E (V)

    (V C E =4V)

    0.5

    2.0

    Base Current I B (A)

    h FE I C Characteristics (Typical)

    0.1

    5A

    Collector-Emitter Voltage V C E (V)

    10
    0.02

    mp)
    Temp
    )

    50mA

    10

    e Te

    0 .1 A

    Cas

    C (

    0 .2
    10

    125

    4A

    (V C E =4V)

    15

    j - a (C/W)

    0.

    1.4

    I C V BE Temperature Characteristics (Typical)

    Collector Current I C (A)

    6A

    Weight : Approx 6.0g


    a. Part No.
    b. Lot No.

    V CE ( sat ) I B Characteristics (Typical)


    Collector-Emitter Saturation Voltage V C E (sa t) (V )

    Collector Current I C (A)

    0.

    0.65 +0.2
    -0.1

    5.450.1
    B

    VCC
    (V)

    15

    2
    3
    1.05 +0.2
    -0.1

    Typical Switching Characteristics (Common Emitter)

    I C V CE Characteristics (Typical)

    3.20.1

    IB

    Tstg

    2.00.1

    Temp)

    IC

    4.80.2

    (Case

    VEBO

    15.60.4
    9.6

    1.8

    VCB=180V

    5.00.2

    ICBO

    19.90.3

    30C

    180

    Unit

    (Case

    VCEO

    Ratings

    25C

    180

    Conditions

    2.0

    VCBO

    External Dimensions MT-100(TO3P)

    (Ta=25C)

    Symbol

    4.0

    Unit

    4.0max

    Electrical Characteristics

    (Ta=25C)

    Ratings

    Symbol

    20.0min

    Absolute maximum ratings

    Application : Audio and General Purpose

    50

    3.5
    0

    Without Heatsink
    0

    25

    50

    75

    100

    125

    Ambient Temperature Ta(C)

    150

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