Tiger Electronic Co.,Ltd: TO-92 Plastic-Encapsulate Transistors

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TIGER ELECTRONIC CO.

,LTD
TO-92
2N2222A

Plastic-Encapsulate Transistors
TO-92

TRANSISTOR (NPN )

1. EMITTER

FEATURE
Complementary NPN Type available (MPS2222)

2. BASE
3. COLLECTOR

MAXIMUM RATINGS (TA=25 unless otherwise noted)


Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

75

VCEO

Collector-Emitter Voltage

40

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

600

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55-150

1 2 3

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


Parameter

Symbol

Test

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 10uA , IE=0

75

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA ,

40

Emitter-base breakdown voltage

V(BR)EBO

IE= 10uA, IC=0

Collector cut-off current

ICBO

VCB= 60V, IE=0

10

nA

Collector cut-off current

ICEX

VCE= 60V,VEB(Off)=3V

10

nA

Emitter cut-off current

IEBO

VEB= 3 V, IC=0

100

nA

hFE(1)

VCE=10V,IC= 150mA

100

hFE(2)

VCE=10V,IC= 0.1mA

40

VCE=10V, IC= 500mA

42

DC current gain

*
hFE(3)

Collector-emitter saturation voltage


Base-emitter saturation voltage

conditions

IB=0

300

VCE(sat)(1)

IC= 500mA, IB=50mA

0.6

VCE(sat)(2)

IC= 150mA, IB=15mA

0.3

IC= 500mA, IB= 50mA

1.2

VBE(sat)

Delay time

td

VCC=30V, VEB(Off)=-0.5V,

10

nS

Rise time

tr

IC=150mA,IB1=15mA

25

nS

Storage time

tS

225

nS

Fall time

tf

60

nS

Transition frequency

fT

VCC=30V,Ic=150mA,IB1=IB2=15mA
VCE=20V, IC=20mA, f=100MHz

300

pulse test

CLASSIFICATION OF hFE(1)
Rank
Range

100-200

200-300

MHz

Typical Characteristics

MPS2222A

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