TO-92L Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD
TO-92L Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD
TO-92L Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD
, LTD
TO-92L Plastic-Encapsulate Transistors
TPT5610 TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
1 W (Tamb=25)
Collector current
I
CM:
-1 A
Collector-base voltage
V
(BR)CBO
: -25 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test condi ti ons MIN TYP MAX UNIT
Col l ector-base breakdown vol tage V(BR)CBO Ic=-10A, IE=0 -25 V
Col l ector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -1 A
DC current gai n hFE VCE=-2V, IC=-500mA 60 240
Col l ector-emitter saturati on vol tage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V
Transi ti on frequency fT VCE=-2V, IC=-500mA 350 MHz
Col l ector output capacitance Cob VCB=-10V, IE=0, f=1MHz 38 pF
CLASSIFICATION OF h
FE
Rank A B C
Range
60-120 85-170 120-240
1 2 3
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE