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    Audio Transistor Amplifier

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    karan007_m
    The TIP35C is a high current, high power dissipation NPN planar silicon transistor intended for use in audio power amplifiers and DC to DC converters. It can handle up to 15A of collector current and dissipate up to 125W of power. It is complementary to the TIP36C transistor.

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    Audio Transistor Amplifier

    Uploaded by

    karan007_m
    53 views2 pages
    The TIP35C is a high current, high power dissipation NPN planar silicon transistor intended for use in audio power amplifiers and DC to DC converters. It can handle up to 15A of collector current and dissipate up to 125W of power. It is complementary to the TIP36C transistor.

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    The TIP35C is a high current, high power dissipation NPN planar silicon transistor intended for use in audio power amplifiers and DC to DC converters. It can handle up to 15A of collector current and dissipate up to 125W of power. It is complementary to the TIP36C transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    53 views2 pages

    Audio Transistor Amplifier

    Uploaded by

    karan007_m
    The TIP35C is a high current, high power dissipation NPN planar silicon transistor intended for use in audio power amplifiers and DC to DC converters. It can handle up to 15A of collector current and dissipate up to 125W of power. It is complementary to the TIP36C transistor.

    Copyright:

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    Download as PDF, TXT or read online from Scribd
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    TIP35C NPN PLANAR SILICON TRANSISTOR

    AUDIO POWER AMPLIFIER


    DC TO DC CONVERTER
    SC-65
    ! High Current Capability

    ! High Power Dissipation

    ! Complementary to TIP36C

    C)
    ABSOLUTE MAXIMUM RATING (Ta=25°C

    Characteristic Symbol Rating Unit

    Collector-Base Voltage VCBO 100 V


    Collector-Emitter Voltage VCEO 100 V
    Emitter-Base voltage VEBO 6 V
    Collector Current (DC) IC 15 A
    Collector Dissipation PC 125 W
    Junction Temperature Tj 150 °C
    Storage Temperature Tstg -55~150 °C

    C)
    ELECTRICAL CHARACTERISTICS (Ta=25°C

    Characterristic Symbol Test Condition Min Typ Max Unit

    Collector Base Breakdown Voltage BVCBO IC=5 mA IE=0 100 V


    Collector Emitter Breakdown Voltage BVCEO IC=10 mA RBE=∞ 100 V
    Emitter Base Breakdown Voltage BVEBO IE=5mA IC=0 6 V
    Collector Cutoff Current ICBO VCB=50V IE=0 0.1 mA
    Emitter Cutoff Current IEBO VEB=4V IC=0 0.1 mA
    *DC Current Gain hFE1 VCE=5V IC=1A 55 150
    DC Current Gain hFE2 VCE=5V IC=5A 20
    Collector- Emitter Saturation Voltage VCE(sat) IC=5A IB=0.5A 1.0 V

    Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
    Homepage: http://www.wingshing.com E-mail: [email protected]
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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