Tda 6103
Tda 6103
Tda 6103
DATA SHEET
Philips Semiconductors
Philips Semiconductors
Preliminary specication
TDA6103Q
GENERAL DESCRIPTION The TDA6103Q includes three video output amplifiers in one single in-line 9-pin medium power (SIL9MP) package SOT111BE, using high-voltage DMOS technology, intended to drive the three cathodes of a colour CRT.
3x
TDA6103Q
VDD MIRROR 3
CURRENT SOURCES
1,2,3
LEVELSHIFTER 1
DIFFERENTIAL STAGE
LEVELSHIFTER 2
MIRROR 1
THERMAL PROTECTION
4 GND
MGA968
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
TDA6103Q
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Voltages measured with respect to GND (pin 4); currents as specied in Fig.1; unless otherwise specied. SYMBOL VDD Vi Vidm Voc IocsmL IocsmH Tstg Tj Ves PARAMETER supply voltage input voltage differential mode input voltage cathode output voltage LOW non-repetitive peak cathode output current HIGH non-repetitive peak cathode output current storage temperature junction temperature electrostatic handling human body model (HBM) machine model (MM) HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices (see Handling MOS Devices). QUALITY SPECIFICATION Quality specification SNW-FQ-611 part E is applicable and can be found in the Quality reference pocketbook (ordering number 9398 510 34011). tbf tbf V V ashover discharge = 50 C ashover discharge = 100 nC CONDITIONS 0 0 6 0 0 0 55 20 MIN. MAX. 250 12 +6 VDD 5 10 +150 +150 V V V V A A C C UNIT
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
The internal thermal protection circuit gives a decrease of the slew rate at high temperatures: 10% decrease at 130 C and 30% decrease at 145 C (typical values on the spot of the thermal protection circuit).
OUTPUTS
0 50
50
6 K/W
MGA970
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
Test conditions (unless otherwise specied): Tamb = 25 C; VDD = 200 V; Vip = 1.3 V; Voc1 = Voc2 = Voc3 = 12VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth h-a = 18 K/W; measured in test circuit Fig.5. SYMBOL IDD Ibias Ibias Vi(offset) PARAMETER quiescent supply current input bias current inverting inputs (pins 1, 2 and 3) input bias current non-inverting input (pin 5) input offset voltage (pins 1, 2 and 3) CONDITIONS MIN. 7.0 5 15 50 TYP. 9.25 1 3 tbf MAX. 11.5 +1 +1 +50 UNIT mA A A mV mV/K
Vi(offset) differential input offset voltage temperature drift between pins 1 and 5; 2 and 5; 3 and 5 Cicm Cicm Cidm Voc(min) Voc(max) GB common-mode input capacitance (pins 1, 2 and 3) common-mode input capacitance (pin 5) differential mode input capacitance between 1 and 5; 2 and 5; 3 and 5 minimum output voltage (pins 7, 8 and 9) maximum output voltage (pins 7, 8 and 9) gain-bandwidth product of open-loop gain: Voc1, 2, 3 / Vi1-5, 2-5, 3-5 small signal bandwidth (pins 7, 8 and 9) large signal bandwidth (pins 7, 8 and 9) cathode output propagation delay time 50% input to 50% output (pins 7, 8 and 9) difference in cathode output propagation time 50% input to 50% output (pins 7 and 8, 7 and 9 and 8 and 9) cathode output rise time 10% output to 90% output (pins 7, 8 and 9) V15 = V25 = V35 = 1 V V15 = V25 = V35 = 1 V; note 1 f = 500 kHz
5 10 1 5
10
pF pF pF V V GHz
BS BL tpd
Voc(p-p) = 60 V Voc(p-p) = 100 V Voc(p-p) = 100 V square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 7 and 8 Voc(p-p) = 100 V square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3)
6 5
7.5 7 38
MHz MHz ns
tp
10
+10
ns
tr
Voc = 50 to 150 V square 48 wave; f < 1 MHz; tf = 40 ns (pins 1, 2 and 3); see Fig.7
60
73
ns
tf
cathode output fall time 90% output Vo = 150 to 50 V square 48 to 10% output (pins 7, 8 and 9) wave; f < 1 MHz; tr = 40 ns (pins 1, 2 and 3); see Fig.8
60
73
ns
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
SYMBOL ts
PARAMETER settling time 50% input to (99% < output < 101%)
CONDITIONS Voc(p-p) = 100 V square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 7 and 8
MIN.
TYP.
MAX. 350
UNIT ns
SR
slew rate between V15 = V25 = V35 = 2 V 50 V to (VDD 50 V); (pins 7, 8 and square wave (p-p); 9) f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3) cathode output voltage overshoot (pins 7, 8 and 9) Voc(p-p) = 100 V square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 7 and 8 f < 50 kHz; note 2
1600
V/s
Ov
SVRR Notes
70
dB
1. See also Fig.6 for the typical low-frequency response of Vi to Voc. 2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
Cathode output The cathode output is protected against peak currents (caused by positive voltage peaks during high-resistance flash) of 5 A maximum with a charge content of 50 C. The cathode is also protected against peak currents (caused by positive voltage peaks during low-resistance flash) of 10 A maximum with a charge content of 100 nC. The DC voltage of VDD (pin 6) must be within the operating range of 180 to 210 V during the peak currents. Flashover protection The TDA6103Q incorporates protection diodes against CRT flashover discharges that clamp the cathode output voltage up to a maximum of VDD + Vdiode. To limit the diode current, an external 1.5 k carbon high-voltage resistor in series with the cathode output and a 2 kV spark gap are
needed (for this resistor-value, the CRT has to be connected to the main PCB). This addition produces an increase in the rise- and fall times of approximately 5 ns and a decrease in the overshoot of approximately 3%. VDD to GND must be decoupled: 1. With a capacitor >20 nF with good HF behaviour (e.g. foil). This capacitance must be placed as close as possible to pins 6 and 4, but definitely within 5 mm. 2. With a capacitor >10 F on the picture tube base print. Switch-off behaviour The switch-off behaviour of the TDA6103Q is controllable. This is due to the fact that the output pins of the TDA6103Q are still under control of the input pins for relative low-power supply voltages (approximately 30 V and higher).
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
C par R4 100 k C par R5 100 k C1 Vi1 22 F C2 22 nF C3 Vi2 22 F C4 22 nF C5 Vi3 22 F C6 22 nF Vin3 0.987 mA Vin2 0.987 mA Vin1 0.987 mA C7 8.2 pF R1 667 C8 1 9 6 C12 3.2 pF Voc1 C13 6.8 pF C14 136 pF R7 2 M probe 1 R8 100 k
V DD C11 100 nF
TDA6103Q
8.2 pF R2 667 C9 8.2 pF R3 667 3 2 8
C15 3.2 pF
3
5
C18 3.2 pF
MGA976
Cpar = 70 fF.
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
MGA973
100
Fig.6 Typical low-frequency (f < 1 MHz) response of Vi1, 2,3 to Voc1, 2,3.
x Vi
0 t
Voc
100
60 50
t tr t pd
MGA974
Fig.7 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.
March 1994
Philips Semiconductors
Preliminary specication
TDA6103Q
x Vi
0 t
x ts
Fig.8 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.
March 1994
March 1994
C3 R5 220 R9 3.3 k R13 470 R10 680 R16 100 k R17 100 k R24 47 C6 10 F (250 V) R25 1.2 X1 1 2 3 4 185 V AQUA V ff V ff (GND)
Philips Semiconductors
TDA6103Q
EHT X3 R G B GND 4 3 2 1 C1 R6 R7 470 3.3 k R15 470 C4 220 nF C2 R4 R8 470 3.3 k R14 470 R11 680 R18 100 k R12 680 1 2 3 4 C5 100 nF R19 220 k R20 1.5 k 5 6 7 8 9 R21 1.5 k R22 1.5 k R23 1.5 k C7 2.7 nF (500 V) C8 2.7 nF (500 V) optional kR kG kB g1 g2 g3 A51EAL . . X02
10
MGA977
Preliminary specication
TDA6103Q
Philips Semiconductors
Preliminary specication
TDA6103Q
1,2,3
TDA6103Q
(1)
7,8,9 Vbias to differential stage to differential stage from input to differential circuit stage
MGA971
(1) All pins have an energy protection for positive or negative overstress situations.
Dissipation Regarding dissipation, distinction must first be made between static dissipation (independent of frequency) and dynamic dissipation (proportional to frequency). The static dissipation of the TDA6103Q is due to voltage supply currents and load currents in the feedback network and CRT. The static dissipation equals: Pstat = VDD IDD 3 Voc (Voc/Rfb IOC) Rfb = value of feedback resistor. IOC = DC-value of cathode current. The dynamic dissipation equals: Pdyn = 3 VDD (CL + Cfb + Cint) fi Vo(p-p) CL = load capacitance. Cfb = feedback capacitance. Cint = internal load capacitance (4 pF). fi = input frequency. Vo(p-p) = output voltage (peak-to-peak value). = non-blanking duty-cycle. The IC must be mounted on the picture tube base print to minimize the load capacitance (CL).
March 1994
11
Philips Semiconductors
Preliminary specication
TDA6103Q
22.00 21.35 21.4 20.7 15.1 14.9 2.75 2.50 (2x) 3.4 3.2 fin 1.75 1.55 3.85 3.45
8.7 8.0
3.9 3.4 0.45 0.25 0.67 0.50 1.40 1.14 0.25 M (9x) 0.47 0.38 2.54 65 o 55 o
MBC376 - 1
1.0 0.7
2.54 (8x)
Dimensions in mm.
March 1994
12
Philips Semiconductors
Preliminary specication
TDA6103Q
This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1994
13
Philips Semiconductors
Preliminary specication
TDA6103Q
March 1994
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Philips Semiconductors
Preliminary specication
TDA6103Q
March 1994
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Philips Semiconductors