Focal Plane Array

In this paper we show the latest achievements of HgCdTe-based infrared bispectral focal plane arrays (FPAs) at LETI infrared laboratory. We present and compare the two different pixel architectures that are studied now in our laboratory, named ''NPN'' and ''pseudo-planar''. With these two technologies, a wide range of system applications in dual-band detection can be covered. Advantages of both architectures will be pointed out. We also review performances obtained with these different architectures. The first one has been studied for several years in our laboratory, and we review results obtained on FPAs of size 256 · 256 pixels on a 25 lm pitch, in the MWIR/MWIR (3 lm/5 lm) range. Very high noise equivalent temperature difference (NETD) operability is obtained, at 99.8% for the k c = 3 lm band and 98.7% for the k c = 5 lm band. The second one has been developed more recently, to address other applications that need temporal coherence as well as spatial coherence. We show detailed performances measured on pseudo-planar type FPAs of size 256 · 256 pixels on a 30 lm pitch, in the MWIR/LWIR (5 lm/9 lm) range. The results are also very promising for these prototypes, with NETD as low as 15 mK for an integration time as short as 1 ms, and good operability. The main manufacturing issues are also presented and discussed for both pixel architectures. Challenging process steps are, firstly, molecular beam epitaxy (MBE) HgCdTe heterostructure growth, on large substrates (cadmium zinc telluride) and heterosubstrates (germanium), and, secondly, detector array fabrication on a nonplanar surface. In particular, trenches or hole etching steps, photolithography and hybridization are crucial to improve uniformity, number of defects and performances. Some results of surface, structural and electrical characterizations are shown to illustrate these issues. On the basis of these results, the short-term and longterm objectives and trends for our research and development are presented, in terms of pixel pitch reduction, wavelengths, and dual-band FPA size.

We have been actively pursuing the development of long-wavelength infrared (LWIR) HgCdTe grown by molecular beam epitaxy (MBE) on large-area silicon substrates. The current effort is focused on extending HgCdTe/Si technology to longer wavelengths and lower temperatures. The use of Si versus bulk CdZnTe substrates is being pursued due to the inherent advantages of Si, which include available wafer sizes (as large as 300 mm), lower cost (both for the substrates and number of die per wafer), compatibility with semiconductor processing equipment, and the match of the coefficient of thermal expansion with silicon read-out integrated circuit (ROIC). Raytheon has already demonstrated low-defect, high-quality MBE-grown HgCdTe/Si as large as 150 mm in diameter. The focal plane arrays (FPAs) presented in this paper were grown on 100 mm diameter (211)Si substrates in a Riber Epineat system. The basic device structure is an MBE-grown p-on-n heterojunction device. Growth begins with a CdTe/ZnTe buffer layer followed by the HgCdTe active device layers; the entire growth process is performed in situ to maintain clean interfaces between the various layers. In this experiment the cutoff wavelengths were varied from 10.0 lm to 10.7 lm at 78 K. Detectors with >50% quantum efficiency and R 0 A~1000 Ohms cm 2 were obtained, with 256 · 256, 30 lm focal plane arrays from these detectors demonstrating response operabilities >99%.

This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm 9 4 cm to 8 cm 9 8 cm on CdZnTe without sacrificing the quality of the layers are described. Extremely high compositional uniformity and low macrodefect density were achieved for single-and two-color HgCdTe layers on both Si and CdZnTe substrates. Finally, a few examples of detector and focal-plane array results are included to highlight the importance of high compositional uniformity and uniformly low macrodefect density of the epitaxial layers in obtaining high operability and low cluster outages in single-and two-color focal-plane arrays (FPAs).

HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive CdZnTe substrates. The goal of this work is to evaluate the use of HgCdTe/Si for mid-wavelength/long-wavelength infrared (MWIR/LWIR) dualband FPAs. A series of MWIR/LWIR dual-band HgCdTe triple-layer n-P-n heterojunction (TLHJ) device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. The wafers showed low macrodefect density (<300 cm À2 ) and was processed into 20-lm-unit-cell 640 9 480 detector arrays which were mated to dual-band readout integrated circuits (ROICs) to produce FPAs. The measured 80-K cutoff wavelengths were 5.5 lm for MWIR and 9.4 lm for LWIR, respectively. The FPAs exhibited high pixel operabilities in each band, with noise equivalent differential temperature (NEDT) operabilities of 99.98% for the MWIR band and 99.6% for the LWIR band demonstrated at 84 K.

MUSTANG is a 90 GHz bolometer camera built for use as a facility instrument on the 100 m Green Bank radio telescope (GBT). MUSTANG has an 8 by 8 focal plane array of transition edge sensor bolometers read out using timemultiplexed SQUID electronics. On the GBT each pixel has an 8 ′′ beam size. In one hour we expect to be able to map a 15 ′ square of sky to 0.2 mJy/beam RMS making MUSTANG on the GBT a very competitive instrument capable of a wide range of galactic and extragalactic science.