Presentation on Zener Diode

International Journal of Research, 2017

Zener diode –voltage regulator when it undergoes reversed bias and a normal diode in forward bias. Purpose to study the characteristics of zener diode

Electronics Letters, 2015

Electrical overstress (EOS) is assumed as one of the most misinterpreted electrical phenomena that can affect drastically the reliability of electronic components. To predict the behaviour of a circuit under EOS, a relevant predictive circuit model is required. An investigation of circuit degradation caused by the pulsed EOS is addressed. More precisely, the electrical response of the Zener diode BZX84B6V8 under square wave EOS is modelled. The proposed model is originally extracted from the diode electro-thermal behaviour caused by the selfheating induced by excessive EOS on the reverse voltage. The diode EOS model was emulated and implemented in VHDL-AMS language. It has been found experimentally, with a 17 V amplitude and 8 ms period square wave EOS, that the diode transient electrical parameters enable experimental response prediction. The suggested model can be used for reliability analyses of electronic devices.

IN THIS CHAPTER YOU WILL LEARN 1. The characteristics of the ideal diode and how to analyze and design circuits containing multiple ideal diodes together with resistors and dc sources to realize useful and interesting nonlinear functions.

Microelectronics Reliability, 2013

In this paper, the characteristics degradation due to the Electrical Overstress (EOS) on Zener diode is analyzed. To characterize this misunderstood effect, relevant experimental setup reproducing the influences of EOS waveforms is developed. Basic EOS tests of Zener diode BZX84B6V8 versus the stress voltage amplitude and pulse width are fulfilled. Subsequently, analyses of the time-dependent voltage across the diode in function of the stress voltage are performed. To cope with the EOS malfunctioning aspect, I-V characteristics are plotted along the stress time and a physical interpretation of the observed electrical responses is also addressed. It was pointed out that this undesired electrical degradation during the tests can be substantially due to the thermal action on the diode junction over its tolerated normal values.

IEEE Transactions on Instrumentation and Measurement, 2005

Journal of Applied Physics, 2010

Recently, a renewed interest in Zener tunneling has arisen because of its increasing impact on semiconductor device performance at nanometer dimensions. In this paper we evaluate the tunnel probability under the action of a nonuniform electric field using a two-band model and arrive at significant deviations from the commonly used Kane's model, valid for weak uniform fields only. A threshold on the junction bias where Kane's model for Zener tunneling breaks down is determined. Comparison with Kane's model particularly shows that our calculation yields a higher tunnel probability for intermediate electric fields and a lower tunnel probability for high electric fields. When performing a current calculation comparing to the WKB approximation for the case of an abrupt p-n junction significant differences concerning the shape of the I-V curve are demonstrated.

IEEE Transactions on Electron Devices, 2000

Ahtract-Phosphorus implantation, performed prior to the major standard process steps in p-channel technology, is used for a well controllable reduction of the breakdown voltage of planar diodes down to values which makes them suited as protection devices.