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2006, 2006 International Symposium on System-on-Chip
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4 pages
1 file
An implementation of an On Chip Memory (OCM) based Dual Data Rate external memory controller (OCM2DDR) for Virtex II Pro is described. The proposed OCM2DDR controller comprises Data Side OCM (DSOCM) bus interface module, read and write control logic, halt read module and Xilinx DDR controller IP core. The presented design supports 16MB of external DDR memory and 32 to 64 bits data conversion for single read and write operations. Our implementation uses 1063 slices of Virtex2Pro FPGA and runs at 100 MHz. The major bene ts of the proposed design are high bandwidth to external memory with reduced and more predictable access times compared to the Xilinx PLB DDR controller implementation. More specially, our read and write accesses are 2,44 and 4,25 times faster, than the PLB based solution respectively.
In computers the word memory refers to the computer hardware device, which can be used to accumulate information data for direct access within the computer. A memory controller is a digital design that manages the flow of data going in and out of the memory devices which are in contact with the controller. DoubleDataRateSynchronousDynamicRandomAccessMemor y (DDRSDRAM) which is widely used memory duetoitsspeedburstaccessandpipelinefeatures and hence due to these features it isthemost commonly used memoryincomputers. This paper describesaDDRSDRAM controller that can be used to create the command signals which are necessary for memory refresh, read and write operations.Thedesign of the controller isdonein a verilog HardwareDescriptionLanguage (HDL)and the tool used to simulate the verilog code is Xilinx Integrated Synthesis Environment (ISE) DesignSuite14.2.
2006
This application note describes a 667 Mb/s DDR2 SDRAM interface implemented in a Virtex®-5 device. A customized version of this reference design can be generated using the Xilinx® Memory Interface Generator (MIG) tool. XAPP858 (v2.2) September 14, 2010 www.xilinx.com 4 R DDR2 Memory Commands Precharge Command The Precharge command is used to deactivate the open row in a particular bank. The bank is available for a subsequent row activation a specified time (t RP) after the Precharge command is issued. Input A10 determines whether one or all banks are to be precharged. Auto Refresh Command DDR2 SDRAM devices need to be refreshed every 7.8 μs. The circuit to flag the Auto Refresh commands is built into the controller. The controller uses a system clock, divided by 16, to drive the refresh counter. When asserted, the auto_ref signal flags the need for Auto Refresh commands. The auto_ref signal is held High 7.8 μs after the previous Auto Refresh command. The controller then issues the Auto Refresh command after it has completed its current burst. Auto Refresh commands are given the highest priority in the design of this controller.
International Journal of Engineering Research and Technology (IJERT), 2015
https://www.ijert.org/design-and-implementation-of-high-speed-ddr-sdram-controller-on-fpga https://www.ijert.org/research/design-and-implementation-of-high-speed-ddr-sdram-controller-on-fpga-IJERTV4IS070428.pdf The dedicated memory controller is important is the applications in high end applications where it doesn't contains microprocessors. Command signals for memory refresh, read and write operation and SDRAM initialisation has been provided by memory controller. Our work will focus on FPGA implementation of Double Data Rate (DDR) SDRAM controller. The DDR SDRAM controller is located in between the DDR SDRAM and bus master. The operations of DDR SDRAM controller is to simplify the SDRAM command interface to the standard system read/ write interface and also optimization of the access time of read/write cycle. The proposed design will offers effective power utilization, reduce the gate count, reduce the area of chip and improves the speed of system by reducing the gates. The proposed design is implemented using Xilinx FPGA platform.
2017
Multimedia applications plays very important role in the field of VLSI design and embedded systems. They need large amount of memory storage with higher bandwidth and higher speed. To overcome this hazard a memory controller is required. A memory controller is a device that stores the data and gives it back whenever required. Real time recording of an audio data and finally storing it without losing the data is difficult task. This paper describes Double Data Rate Synchronous Dynamic Random Access memory controller for storing the audio data. The design uses finite state machine (FSM) architecture that is developed for testing of this algorithm. The tool used to simulate this design is Xilinx ISE design suit. The hardware used to synthesize this design is FPGA Spartan-3 kit.
2007
As FPGA designers strive to achieve higher performance while meeting critical timing margins, the memory interface design is a consistently difficult and time-consuming challenge. Xilinx FPGAs provide I/O blocks and logic resources that make the interface design easier and more reliable. Nonetheless, the I/O blocks, along with extra logic, must be configured, verified, implemented and properly connected to the rest of the FPGA by the designer in the source RTL code, carefully simulated, and then verified in hardware to ensure a reliable memory interface system. This white paper discusses the various memory interface controller design challenges and Xilinx solutions. It also describes how to use the Xilinx software tools and hardware-verified reference designs to build a complete memory interface solution for your own application, from low-cost DDR SDRAM applications to higher-performance interfaces like the 667 Mb/s DDR2 SDRAMs.
2015
In the modern electronics equipments that uses the memory, efficient and High speed memory controllers are must. Memory controllers will control the data flow in all electronic equipments such as Mobile Phones, Computers, Audio Video devices etc. Large number of signals can be sent or received at a time to the memory device. But sending or receiving the data directly will cause more traffic which degrades the performance of the device. In order to overcome such issues the memory controller is designed. User cannot directly interface with the memory device. In this project we are designing a memory controller the acts as an interface to control the signals efficiently between the SDRAM and user. A SDRAM memory device is used in order to decrease the latency and power consumption. The user interface can be done using the USB device. Design of this memory controller was done by considering many constraints. Designed memory controller uses the Xilinx platform which configured with DDR2 ...
DDR SDRAM is similar in function to the regular SDRAM but doubles the bandwidth of the memory by transferring data on both edges of the clock cycles.DDR SDRAM most commonly used in various embedded application like networking, image/video processing, Laptops etc. The memory controller accepts commands using local interface and translates them to the command sequences required by DDR SDRAM devices. However there are challenges in its controller design those are arising to its straight requirement much as regular refresh operation, memory initialization process, proper active and precharge command etc. The principle and commands of DDR SDRAM controller design are explained in this paper. The operations of DDR SDRAM controller are realized through Verilog HDL .This proposed architecture design of DDR SDRAM controller is used as IP core into any FPGA based embedded system having requirement of high-speed operation.
International Journal of Computer Science and Information Technology, 2011
The demand for faster and cheaper memories has been increasing by the day. Hence, these memory devices are rapidly developing to give high density and high memory bandwidths. However, with the increase in technology, complexity of instructions to control the memory devices also increases. In this paper, a specific purpose DDR3 Controller is described. This paper presents the overall architecture of the DDR3 Controller. Also the advantages of DDR3 over DDR2 and DDR are discussed.
2013
Double Data Rate Synchronous DRAM (DDR SDRAM) has become a mainstream memory of choice in design due to its speed, burst access and pipeline features. The DDR SDRAM is an enhancement to the conventional SDRAM running at bus speed over 75MHz. The DDR SDRAM (referred to as DDR) doubles the bandwidth of the memory by transferring data twice per cycle on both the rising and falling edges of the clock signal. The designed DDR Controller supports data width of 64 bits, Burst Length of 4 and CAS (Column Address Strobe) latency of 2. DDR Controller provides a synchronous command interface to the DDR SDRAM Memory along with several control signals. In this paper, the implementation has been done in Verilog HDL by using Xilinx ISE 9.2i and Modelsim 6.4b.
2021 IEEE Symposium on High-Performance Interconnects (HOTI), 2021
Even with generational improvements in DRAM technology, memory access latency still remains the major bottleneck for application accelerators, primarily due to limitations in memory interface IPs which cannot fully account for variations in target applications, the algorithms used, and accelerator architectures. Since developing memory controllers for different applications is time-consuming, this paper introduces a modular and programmable memory controller that can be configured for different target applications on available hardware resources. The proposed memory controller efficiently supports cache-line accesses along with bulk memory transfers. The user can configure the controller depending on the available logic resources on the FPGA, memory access pattern, and external memory specifications. The modular design supports various memory access optimization techniques including, request scheduling, internal caching, and direct memory access. These techniques contribute to reducing the overall latency while maintaining high sustained bandwidth. We implement the system on a state-of-theart FPGA and evaluate its performance using two widely studied domains: graph analytics and deep learning workloads. We show improved overall memory access time up to 58% on CNN and GCN workloads compared with commercial memory controller IPs.
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