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Aluminium is invariably present in both synthetic and natural quartz crystals which exists as a substitution for silicon. The trivalent aluminium can make only three of the bonds normally made by a silicon and hence a negative charge exists on the site due to the fourth non-bonding oxygen. This charge is compensated by impurity ions which are bound electrostatically in an adjacent *-axis channel. During sweeping the compensating impurity ions which are weakly bound near the aluminium atoms move toward the cathode. This result in the collection of negative space charges near the anode side of the crystal deforming the lattice. X-ray transmission topographs recorded from vacuum swept quartz crystals show a strong dark contrast near the anode side of the crystals due to lattice strain. This strong X-ray topographic contrast disappears when the crystals are subjected to prolonged X-ray irradiation. The negative charge formed near the anode side of the crystals during sweeping is compensated by forming aluminium-hole and aluminium-hydroxyl centres during the irradiation
X-ray topographic studies were made on alpha quartz crystals with in situ electric field using graphite and silver electrodes at elevated temperatures in vacuum. A strong dark striation contrast appeared on the topographs near the anode side of the crystals when recorded with electric field along the c-axis. The effect is attributed to lattice deformation by space charge collection caused by the removal of the charge compensating impurity ions. The striation contrast disappeared as the temperature was raised above the stability range of the alpha phase. A strong contrast also appeared on the topographs near the cathode side of the crystals when silver electrodes were used. This contrast was due to the accumulation of the silver electrode material. The contrast at the anode end due to sweeping was predominant when the dc electric field was along the c-axis whereas the contrast near the cathode end was present irrespective of the direction of the electric field inside the crystals. Spotty contrast due to the evolution of fluid inclusion with increasing temperature has also been observed in some crystals. KEYWORDS: quartz, X-ray topography, sweeping, solid state electrolysis, electrodiffusion of impurity ions
X-ray topographic studies are made on vacuum-swept a-quartz crystals. A strong defect contrast is observed on X-ray topographs near the anode side of the crystal. This contrast disappears when the crystals are subjected to prolonged X-ray irradiation. The presence of this unusual contrast is attributed to lattice strains due to the collection of space charges near the anode side during vacuum sweeping. The negative space charge so formed is compensated by forming A1-OH and Al-hole centres during irradiation
An X-ray diffraction study of a-quartz crystals with in situ electric field along the different crystallographic axes shows a strong enhancement in the diffracted intensity. The effect is prominent in natural crystals when the electric field is along the c-axis. This is evidenced by the increase in the intensity of X-ray rocking curves recorded from several crystals. The X-ray topographs recorded with in situ electric field show extinction contrast consisting of striations parallel to the c-axis. This contrast disappears during irradiation in the absence of an electric field. The increase in the diffracted intensity and the contrast on the topographs are explained by a model on negative space-charge collection.
Journal of Applied Crystallography
Quartz has hundreds of strong Bragg reflections that may offer a great number of choices for making fixed-angle X-ray analyzers and polarizers at virtually any hard X-ray energies with selectable resolution. However, quartz crystals, unlike silicon and germanium, are chiral and may thus appear in two different forms of handedness that are mirror images. Furthermore, because of the threefold rotational symmetry along thecaxis, the {h1h2h3L} and {h2h1h3L} Bragg reflections may have quite different Darwin bandwidth, reflectivity and angular acceptance, although they have the same Bragg angle. The design of X-ray optics from quartz crystals therefore requires unambiguous determination of the orientation, handedness and polarity of the crystals. The Laue method and single-axis diffraction technique can provide such information, but the variety of conventions used in the literature to describe quartz structures has caused widespread confusion. The current studies give detailed guidelines ...
physica status solidi (b), 1993
X-ray absorption spectra of a-quartz in the XANES region are presented both at oxygen and silicon K edges. The consequences of the electric dichroism ofthe samples on XANES structures are investigated. Polarization effects are detected when the electric field of the incident beam is parallel or perpendicular to the crystallographic c-axis. The structures after the absorption edges are discussed both in the frame of the Natoli's rule and from a density of states point of view.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003
High resolution X-ray Laue topography was conducted on the SPring-8 BL-28B2 beamline, operating at a 5-100 keV energy range. The use of this beamline was particularly suitable for characterization of thick samples of giant blocks of natural quartz used as seeds for growing synthetic quartz; and also to understand the propagation mechanism of dislocation lines in synthetic quartz. Area enlargement of Laue topographs by scanning the sample-film stage in the vertical direction was particularly useful for high energy diffraction images, due to their relatively small vertical dimensions. The methodology applied to characterize thick crystals used in the present research, is an effective contribution to develop nearly perfect large dimension seeds and synthetic quartz bars for the next generation of ''surface acoustic waves'' device substrates.
Radiation Measurements, 2000
The role of alkali ions in the creation of the thermally stimulated luminescence (TSL) peak at 190 K in quartz has been investigated by wavelength resolved TSL and thermally stimulated current (TSC) measurements performed on synthetic crystals, both as grown and hydrogen swept, characterised by alkali content of about 1±3 and 0.1 ppm respectively. The 190 K peak has been eciently produced in as-grown crystals by a double irradiation procedure consisting of a ®rst x-ray irradiation at 90 K followed by heating in the 170±300 K temperature range and a second irradiation at 90 K; this eect has not been observed in the hydrogen swept crystal. Moreover, the study of the spectral composition of the emitted light has shown the existence of two emission bands, one peaking at 450 nm (T < 150 K) and the second one evidenced for T > 150 K and peaking at around 380 nm. In as grown samples, TSC peaks at 205, 260 and at around 350 K (composite structure) have been detected: their intensities are much stronger in the as grown crystal and with the electric ®eld oriented along the z-axis indicating that they have an ionic character. By taking into account the mechanism of formation of the [SiO 4 /M + ] 0 (M + =Li + , Na +) traps (previously found to be responsible for the 190 K TSL peak), the 205 K TSC peak can be attributed to the radiation induced dissociation of alkalis from [AlO 4 /M + ] 0 defect centres and subsequent migration near to Si sites; on the other hand, the 260 K TSC peak can be related to the subsequent disintegration of [SiO 4 / M + ] 0 defects involving the migration of alkalis to dierent ionic traps.
This paper gives an overview of the effect of electric field on the diffracted intensity and contrast on the X-ray topographs recorded from crystals of non-linear and electro-optic materials, ionic conductors, semiconductors, insulators and ferro-electric materials. Application of a dc electric field gives rise to a change in the diffracted intensity by several orders of magnitude and contrast on the topographs. The effect is illustrated with examples of t~-LilO3, KTiOPO4, LiN2H5 SO4, KNbO3, LiNH4SO4, quartz, silicon etc. and the mechanism for it is discussed. CONTENTS
Journal of Applied Crystallography, 2007
The small-angle X-ray scattering (SAXS) in as-grown and heat-treated quartz crystals was investigated as a function of the azimuth angle around the primary beam. For this, samples parallel to (10 1 10) were extracted from Z-and ÀXgrowth sectors of a synthetic quartz bar which had the OH content evaluated by infrared spectroscopy (IRS). In addition, SAXS and IRS were independently recorded as a function of heating temperature. As a result, the two-dimensional SAXS images revealed an anisotropic pattern randomly decorated by lowintensity Kossel lines. The intensities were projected along specific directions or were axially integrated around the primary beam. It was observed that the Porod invariant (Q) increased and the Kossel lines moved slightly to higher q values with increasing temperature. The effect of the sample orientation on the Q value and the lack of a clear relationship between Q and OH content suggested that the diffuse scattering due to the periodicity of the crystal lattice played an important role in the small-angle scattering of quartz. The net scattering intensities produced by heat-treatment at 873 K were attributed to molecular water aggregates created by the diffusion of as-grown OH defects. conference papers J. Appl. Cryst. (2007). 40, s132-s137 Pedro L. Guzzo et al. Water aggregates in quartz s133 Figure 1 Two-dimensional SAXS patterns of as-grown samples of synthetic quartz. (a) Un-rotated ð10 1 10Þ. (b) Double-rotated ð10 1 10Þ. conference papers J. Appl. Cryst. (2007). 40, s132-s137 Pedro L. Guzzo et al. Water aggregates in quartz s135
Physics and Chemistry of Minerals, 2012
A set of raw industrial materials, that is, pure quartz and quartz-rich mixtures, were investigated through electron paramagnetic resonance and electron spin echoenvelope modulation spectroscopies, with the aim of evaluating the effective role played by defect centres and of assessing whether they can be used to monitor changes in the physical properties of quartz powders with reference to their health effects. The obtained results point to two interactions of the Al defect centres with H ? , hosted in sites within the channels parallel and perpendicular to the c axis of quartz, respectively. These two Al/H ? (h Al ) centres exhibit a weak chemical bond, and their relative amounts appear to be modified/controlled by the thermomechanical processes underwent by powders. Indeed, a mechanically promoted inter-conversion between the two kinds of site is suggested. As a consequence, the h Al centres are effective in monitoring even modest activations of powders, through thermal or mechanical processes, and they are also supposed to play a specific, relevant role in quartz reactivity during the considered industrial processes.
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