PN Junction Diode

PN junction Diode
A- Anode
K-Cathode

A K

Biasing of PN junction Diode

Applying External d.c. voltage to any electronic device is called biasing

Depending upon the polarity of d.c voltage ,the biasing is classified as Forward biasing
and Reverse biasing
 Forward Biasing of Biasing PN junction diode
If an external D.C voltage is connected in such a way that the positive terminal is connected to p-
region and the negative terminal is connected to n-region , then the diode is said to be in
forward biased

_
v

+ + + - +
+ - +
+
+
+ + + -
+
-
Depletion
Region
+ -
 Operation of Forward bias
Depletion Region
In forward bias ,there will
+ + + - + not be any conduction till
+ - +
+ the voltage is less than
- + barrier potential.
+ + + Barrier potential for Ge is
+
- 0.2V ad Si is 0.6 V
+ -

V
When the applied voltage becomes more than barrier potential , the negative
terminal of the battery repels electrons and electrons move from N to P region
Similarly, the positive terminal of the battery repels holes and it moves from P to N
region
Electrons flowing into the depletion region , which reduces the number of positive
ions
Similarly, Holes flowing into the depletion region , which reduces the number of
negative ions
This reduces the width of the Depletion Region
 Reverse Biasing of Biasing PN junction diode
If an external D.C voltage is connected in such a way that the positive terminal is connected to N-
region and the negative terminal is connected to P-region , then the diode is said to be in
Reverse biased

+ + + - +
+ - +
+
+
+ + + -
+
-
Depletion
Region
_ +
 Operation of Reverse bias
Depletion Region

+ + +- - - - - + + + +
+- - - - - + + + +
+
+ + + +
+ + -+ - - - -
+ + + +
-----
V_
_ +
In Reverse bias , the negative terminal of the battery attracts holes and the positive
terminal of the battery attracts electrons .Thus electrons and holes move from the
junction
Holes moving away from junction leaves more negative ion in P side
Electrons moving away from junction leaves more positive ion in N side
Thus the width of the Depletion Region increases
As depletion region increases ,barrier potential also increases
Due to thermal energy only limited number of holes and electrons are formed . Thus
this process does not continues for long time
Reverse current does not depends on reverse voltage but it depends on
temperature
 Reverse Breakdown in PN diode

•When reverse voltage is increased beyond a particular

value , a large current flow and damage the diode.

•This mechanism is called Reverse break down

•Reverse break down takes place due to following effects

a. Avalanche effect

b. Zener Effect
 Break Down due to Avalanche Effect

+
+ + + +
+
+ + + + +
+
V_
_ +

During reverse bias the minority Carriers (electrons & Holes) will collide
with atoms
This collision make the Electrons to break the covalent bonds and many
charge carriers (holes & Electrons) produced
These charge carriers (holes & Electrons) again collide with another atom
to create more charge carriers .this is called carrier multiplication
These Charge carriers (holes & Electrons) will destroy the PN junction
This Effect is called as Avalanche effect
 Break Down due to Zener Effect

+ + + - - - + + +
+ - - - + + +
+ + +
+ + + - - -
+ - - - + + +
V_
_ +
In reverse bias , when voltage is increased ,the depletion Region also
increases
As depletion region is increased ,Barrier potential also increases, this
barrier potential creates a strong electric field
This strong electric field is capable enough to break the covalent bond
and pull out the charge carriers (holes & Electrons) from the atoms
So here charge carriers (holes & Electrons) are formed without
collision
These Charge carriers (holes & Electrons) will destroy the PN junction
This Effect is called as Zener effect
VI Characteristics Of Pn junction
 Forward Characteristics
The graph is plotted forward
Current (If) VS forward voltage
(Vf) is called forward
Characteristics

From O to P forward voltage (Vf) will be less than barrier potential , forward Current
(If) is assumed as zero
From P to Q forward voltage (Vf) exceeds the barrier potential ,Here when forward
voltage (Vf) is increased forward Current (If) also increases
The point at which forward Current (If) increase is called as cut in voltage
 Reverse Characteristics
The graph is plotted reverse
Current (Ir) VS reverse voltage (Vr)
is called reverse Characteritcs

Knee

•From Q to P reverse voltage (Vr) increases , reverse Current (Ir) also increases
•From P to A reverse Current (Ir) remains constant
•At point A reverse voltage increase rapidly and it is called as reverse break down
voltage