Electronic Devices and Circuit Theory
Electronic Devices and Circuit Theory
Electronic Devices and Circuit Theory
Unit 2
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Basics of BJTs
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First Transistor: Invented by
John Bardeen
Walter
Brattain
William
Shockley
Bell Laboratories, 1947
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Transistor: Transfer + Resistor
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1. Emitter have high doping to have more
charge carriers and medium region
(thickness).
2. Base have low doping and very thin region
(thickness).
3. Collector have medium doping and larger
region (thickness).
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Transistor Symbols
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Transistor Operation
(with related to biasing)
Emitter-Base Junction Collector-Base Junction Region of Operation
Forward-Biased Reversed-Biased Active (amplifier)
Forward-Biased Forward-Biased Saturation (Closed Switch)
Reversed-Biased Reversed-Biased Cut-off (Open Switch)
Reversed-Biased Forward-Biased Inverted
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Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Emitter Current Amplification Factor
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Common-Base Transistor
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BJT as an Amplifier
Common Base Amplifier
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BJT as an Amplifier
Common Emitter Amplifier
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BJT as an Amplifier
Common Collector Amplifier
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BJT as a Switch
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BJT as a Switch
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End of Bipolar Junction Transistors – Unit 2 (Part I)
Thank you!
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