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    Baritt Diodes

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    josephinemalathi
    The BARITT diode is a type of transit-time device that operates based on thermionic emission. It consists of a narrow n-region sandwiched between two heavily doped p-regions or metal contacts. When a DC voltage is applied, the depletion regions will widen until they meet at punch-through. The BARITT diode suffers from narrow bandwidth and low output power due to the slow thermal injection of carriers and initial positive resistance lowering input energy. It operates with low noise but at low frequencies.

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    Baritt Diodes

    Uploaded by

    josephinemalathi
    375 views6 pages
    The BARITT diode is a type of transit-time device that operates based on thermionic emission. It consists of a narrow n-region sandwiched between two heavily doped p-regions or metal contacts. When a DC voltage is applied, the depletion regions will widen until they meet at punch-through. The BARITT diode suffers from narrow bandwidth and low output power due to the slow thermal injection of carriers and initial positive resistance lowering input energy. It operates with low noise but at low frequencies.

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    microwave

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    The BARITT diode is a type of transit-time device that operates based on thermionic emission. It consists of a narrow n-region sandwiched between two heavily doped p-regions or metal contacts. When a DC voltage is applied, the depletion regions will widen until they meet at punch-through. The BARITT diode suffers from narrow bandwidth and low output power due to the slow thermal injection of carriers and initial positive resistance lowering input energy. It operates with low noise but at low frequencies.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    375 views6 pages

    Baritt Diodes

    Uploaded by

    josephinemalathi
    The BARITT diode is a type of transit-time device that operates based on thermionic emission. It consists of a narrow n-region sandwiched between two heavily doped p-regions or metal contacts. When a DC voltage is applied, the depletion regions will widen until they meet at punch-through. The BARITT diode suffers from narrow bandwidth and low output power due to the slow thermal injection of carriers and initial positive resistance lowering input energy. It operates with low noise but at low frequencies.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 6

    Microwave Devices VII

    ECE402 Microwave Engineering


    Lecture 40
    BARITT Diode
    BARrier Injected Transit-Time (BARITT) diode belongs to the
    class of Transit - Time Devices that works on the principle of
    thermionic emission

    They have low noise levels of the order of 15 dB, in comparison to


    IMPATT, TRAPATT or Gunn diodes

    They suffer from narrow bandwidth and low output powers

    The frequency of operation is low due to slow thermal injection of


    charge carries.

    The overall power output is also low as the initial phase of charge
    injection follows positive resistance, thereby taking away energy from
    input bias

    1
    BARITT Diode

    It consists of a n region sandwiched between two heavily doped p


    regions. Or alternately a n region sandwiched between two metal
    contacts, forming Schottky barrier

    When a d.c. voltage is applied with the plus on the left hand contact,
    the right hand depletion layer will widen but the device draws no
    current. This goes on until the two depletion layers meet, a situation
    2 called reach-through or punch-through.
    BARITT Diode

    The electric field rises steadily from


    the injecting contact to the other one
    while the carrier density decreases
    simultaneously. One may then assume
    that near the injecting contact the main
    factors governing carrier transport will
    be thermionic injection and diffusion
    whereas in the region of higher field
    strength the electric field will be
    dominant

    3
    BARITT Diode

    I The contact region


    where thermionic
    injection prevails. This
    region lies between the
    injecting contact and
    the point of zero
    electric field (potential
    maximum)

    II The diffusion region where carrier transport is by diffusion mainly.


    This region stretches from the potential maximum to a point where the
    d.c. field has risen to such a value that diffusion may be neglected.
    Necessarily the choice of this point will be somewhat arbitrary.
    III The drift region, comprising the rest of the diode, where the electric
    4 field is dominant
    BARITT Diode

    Voltage and
    current are out
    of phase

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