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    EUV Presentation

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    tansnvarma
    Extreme Ultra-Violet Lithography (EUVL) is needed to continue shrinking chip features beyond the limits of current 193nm lithography. EUVL uses 13.5nm wavelength light which allows much smaller features but requires an all-reflective system due to absorption of all materials at this wavelength. Significant challenges include developing a high power tin plasma 13.5nm light source, highly reflective and precise multi-layer mirrors, and defect-free masks and resists capable of printing at this small scale. While still facing challenges, EUVL remains the most promising solution to enable further chip scaling if technical and cost hurdles can be overcome.

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    EUV Presentation

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    tansnvarma
    285 views16 pages
    Extreme Ultra-Violet Lithography (EUVL) is needed to continue shrinking chip features beyond the limits of current 193nm lithography. EUVL uses 13.5nm wavelength light which allows much smaller features but requires an all-reflective system due to absorption of all materials at this wavelength. Significant challenges include developing a high power tin plasma 13.5nm light source, highly reflective and precise multi-layer mirrors, and defect-free masks and resists capable of printing at this small scale. While still facing challenges, EUVL remains the most promising solution to enable further chip scaling if technical and cost hurdles can be overcome.

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    Extreme Ultra-Violet Lithography (EUVL) is needed to continue shrinking chip features beyond the limits of current 193nm lithography. EUVL uses 13.5nm wavelength light which allows much smaller features but requires an all-reflective system due to absorption of all materials at this wavelength. Significant challenges include developing a high power tin plasma 13.5nm light source, highly reflective and precise multi-layer mirrors, and defect-free masks and resists capable of printing at this small scale. While still facing challenges, EUVL remains the most promising solution to enable further chip scaling if technical and cost hurdles can be overcome.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    285 views16 pages

    EUV Presentation

    Uploaded by

    tansnvarma
    Extreme Ultra-Violet Lithography (EUVL) is needed to continue shrinking chip features beyond the limits of current 193nm lithography. EUVL uses 13.5nm wavelength light which allows much smaller features but requires an all-reflective system due to absorption of all materials at this wavelength. Significant challenges include developing a high power tin plasma 13.5nm light source, highly reflective and precise multi-layer mirrors, and defect-free masks and resists capable of printing at this small scale. While still facing challenges, EUVL remains the most promising solution to enable further chip scaling if technical and cost hurdles can be overcome.

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    Extreme Ultra-Violet

    Lithography
    Matt Smith
    Penn State University
    EE 518, Spring 2006
    Instructor: Dr. J. Ruzyllo

    Outline
    Why do we need EUV lithography?
    Brief overview of current technology
    What exactly is EUV?
    System diagram
    Challenges associated with EUV
    13.5nm source
    Optics
    Masks
    Resists

    Why EUV?
    Minimum lithographic feature size =

    k1*
    NA

    k1: Process complexity factor includes tricks like phase-shift masks

    : Exposure wavelength
    NA: Numerical aperture of the lens maximum of 1 in air, a little higher in
    immersion lithography (Higher NA means smaller depth of focus, though)

    Mask Makers
    Holiday:
    large k1

    Mask Makers
    Burden: small k1

    There are only so


    many tricks to
    increase this gap, and
    they are very
    expensive we
    MUST go to a shorter
    wavelength!

    ftp://download.intel.com/research/silicon/EUV_Press_Foils_080204.pdf

    Why EUV? Why not the next excimer line?


    Hg (G line) @ 436nm Hg (H line) @ 405nm Hg (I line) @ 365nm
    KrF Excimer @ 248nm ArF Excimer @ 193nm ???
    157nm lithography based on the fluorine excimer laser has been largely
    shelved, which leaves 193nm with extensions for production
    Below that, no laser line has the required output power
    Excimer-based steppers expose 109 steps per 300mm wafer, and
    produce >100 wafers per hour exposure times ~ 10-20ns
    Additionally, fused silica and atmospheric oxygen become absorptive by
    157nm so even incremental decreases in wavelength start to require a
    major system overhaul

    Mask Makers
    Holiday:
    large k1

    Mask Makers
    Burden: small k1

    ftp://download.intel.com/research/silicon/EUV_Press_Foils_080204.pdf

    Why EUV? Its all about the money.


    By decreasing by a factor of 14, we take pressure off k1 this makes the
    masks less complicated and expensive because we can skip the tricks
    For example: a 90nm node mask set:
    Pixels:
    Number of pixels on 1 mask:
    Defects:
    Size that must be found and repaired:
    Number of such defects allowed:
    Data:
    Total file size needed for all 22-25 layers:
    Cost:
    Cost for mask set (depreciation, labor, etc):

    1012
    100nm (25nm as projected on wafer)
    0
    200GB
    ~$800k-1.3M

    ftp://download.intel.com/technology/silicon/Chuck Gwyn Photomask Japan 0503.pdf

    Current Lithographic Technology


    Lenses are very effective and perfectly
    transparent for 193nm and above, so many are
    used
    A single lens may be up to 60 fused silica
    surfaces
    System maintained at atmospheric pressure

    Reticle
    (Mask)

    Lens NA ~0.5-0.85
    Up to 1.1 for immersion
    Exposure field 26x32mm
    Steppers capable of >100
    300mm wafers per hour
    at >100 exposures per
    wafer

    193 nm Excimer
    Laser Source

    Wafer
    Computer
    Console

    Exposure
    Column
    (Lens)
    www.tnlc.ncsu.edu/information/ceremony/lithography.ppt

    Basic Technology for EUV


    All solids, liquids, and
    gasses absorb 13.5nm so
    system is under vacuum
    Mask must be reflective
    and exceptionally defectfree
    13.5nm photons generated
    by plasma source

    All-reflective optics
    (all lens materials are
    opaque)
    ftp://download.intel.com/technology/silicon/EUV_Press_Foils_080204.pdf (both images)

    13.5nm Plasma Radiation Source


    The only viable source for 13.5nm photons is a plasma
    Powerful plasma required temperature of up to
    200,000oC, atoms ionized up to +20 state
    Plasma must be pulsed pulse length in pico- to
    nanosecond range
    Argon
    Pre-ionized plasma excited
    by powerful IR laser or
    electric arc of up to 60,000
    A to cause emission

    Tin

    http://www.sematech.org/resources/litho/meetings/euvl/20021014/16-Spectro.pdf

    Plasma Compositions for 13.5nm


    Argon

    Argon

    Tin

    Tin

    13.5nm photons only generated


    by one ion stage (Xe11+)

    Optimum emission when tin is a


    low-percentage impurity

    Even this stage emits 10 times


    more at 10.8nm than 13.5

    All ion stages from Sn8+ to Sn13+


    can contribute

    Maximum population of this stage


    is 45%

    Tin tends to condense on optics

    On the plus side, Argon is very


    clean and easy to work with

    Argon is horribly inefficient: to


    produce 100W at 13.5nm, kilowatts
    of other wavelengths would have to
    be removed

    Tin is great as a 13.5nm source,


    if we can engineer a way to use it
    without destroying our optics

    http://www.sematech.org/resources/litho/meetings/euvl/20021014/16-Spectro.pdf

    Where Plasma and Optics Meet


    - Ions in the source plasma have enough energy to sputter material
    off the lenses of the collector optics
    - If the source uses tin, that will deposit on the lenses as well

    At the power levels required for real exposures,


    collector optics have a lifetime of about a month
    This is VERY bad for Cost of Ownership (CoO)

    ftp://download.intel.com/technology/silicon/EUV_Press_Foils_080204.pdf

    All-Reflective Optics
    All solids, liquids, and gasses absorb 13.5nm photons
    - So fused silica lenses are OUT
    - Indeed, all refracting lenses are OUT
    Making EUV mirrors is no cakewalk, either
    50 or more alternating Mo/Si layers give the mirror its
    reflectivity
    Each layer is 6.7nm thick and requires atomic
    precision
    Since the angle of incidence changes across the
    mirror, so do the required Mo/Si layer thicknesses
    Acceptable surface roughness: 0.2nm RMS
    Aspheric
    Net reflectance: ~70%

    http://www.zeiss.com/C1256A770030BCE0/WebViewAllE/D6279194C2955B2EC12570CF0044E537

    Optics System - Exposure Field


    Full field: ~109
    exposures per
    300mm wafer

    Development-size field:
    > 500,000 exposures per
    300mm wafer

    -In July 2005, Carl Zeiss shipped the first 0.25NA full-field
    optics system to ASML for integration in an EUV system
    Press release: http://www.zeiss.com/C1256A770030BCE0/WebViewAllE/D6279194C2955B2EC12570CF0044E537
    ftp://download.intel.com/research/library/IR-TR-2003-39-ChuckGwynPhotomaskJapan0503.pdf

    EUV Masks

    ftp://download.intel.com/research/library/IR-TR-2003-39-ChuckGwynPhotomaskJapan0503.pdf

    EUV Masks
    NO defects are ever allowed in a completed mask
    Extremely flat and defect-free substrate, perfected by smoothing layer
    All defects in multilayer reflecting stack must be completely repaired
    No defects allowed in absorber layer
    All defects in final absorber pattern must be completely repaired
    (No wonder mask sets are so expensive!)

    ftp://download.intel.com/research/library/IR-TR-2003-39-ChuckGwynPhotomaskJapan0503.pdf

    EUV Resists
    Best Positive Resist

    2.3mJ/cm2 LER=7.2nm

    Best Negative Resist

    3.2mJ/cm2 LER=7.6nm

    LER Line Edge


    Roughness

    39nm 3:1
    (space:lin
    ftp://download.intel.com/research/library/IR-TR-2003-39-ChuckGwynPhotomaskJapan0503.pdf
    e)

    Conclusion
    Will 193nm ever die?
    As recently as 2003, EUV was the only viable solution for the 45nm
    node
    Now Intel wants EUV for the 32nm node, but it may be pushed back
    more:
    In a nutshell, many believe that EUV will NOT be ready for the 32nm
    node in 2009. Some say the technology will get pushed out at
    the 22nm node in 2011. Some even speculate that EUV will never
    work.
    - EE Times, Jan 19, 2006
    My opinion: never say never about this industry
    A lot of work remains: increase output power of 13.5nm source,
    increase NA of reflective lenses, increase lifetime of collector optics
    (decrease cost of ownership)
    But the potential payoff is sufficient that we will make it work

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