BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor

August 2015

BC846 / BC847 / BC848 / BC850

NPN Epitaxial Silicon Transistor

Features
3
• Switching and Amplifier Applications
• Suitable for Automatic Insertion in Thick and Thin-film Circuits
• Low Noise: BC850 2
• Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23
1
1. Base 2. Emitter 3. Collector

Ordering Information(1)
Part Number Marking Package Packing Method
BC846AMTF 8AA SOT-23 3L Tape and Reel
BC846BMTF 8AB SOT-23 3L Tape and Reel
BC846CMTF 8AC SOT-23 3L Tape and Reel
BC847AMTF 8BA SOT-23 3L Tape and Reel
BC847BMTF 8BB SOT-23 3L Tape and Reel
BC847CMTF 8BC SOT-23 3L Tape and Reel
BC848BMTF 8CB SOT-23 3L Tape and Reel
BC848CMTF 8CC SOT-23 3L Tape and Reel
BC850AMTF 8EA SOT-23 3L Tape and Reel
BC850CMTF 8EC SOT-23 3L Tape and Reel

Note:
1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type
packing.

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC846 / BC847 / BC848 / BC850 Rev. 1.9 1
 BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

BC846 80
VCBO Collector-Base Voltage BC847 / BC850 50 V
BC848 30
BC846 65
VCEO Collector-Emitter Voltage BC847 / BC850 45 V
BC848 30
BC846 / BC847 6
VEBO Emitter-Base Voltage V
BC848 / BC850 5
IC Collector Current (DC) 100 mA
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to +150 °C

Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

Power Dissipation 310 mW
PD
Derate Above 25°C 2.48 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W

Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC846 / BC847 / BC848 / BC850 Rev. 1.9 2
 BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA
hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800
Collector-Emitter Saturation IC = 10 mA, IB = 0.5 mA 90 250
VCE(sat) mV
Voltage IC = 100 mA, IB = 5 mA 200 600
IC = 10 mA, IB = 0.5 mA 700
VBE(sat) Collector-Base Saturation Voltage mV
IC = 100 mA, IB = 5 mA 900
VCE = 5 V, IC = 2 mA 580 660 700
VBE(on) Base-Emitter On Voltage mV
VCE = 5 V, IC = 10 mA 720
VCE = 5 V, IC = 10 mA,
fT Current Gain Bandwidth Product 300 MHz
f = 100 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF
Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF
BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μA, 2.0 10.0
Noise BC850 RG = 2 kΩ, f = 1 kHz 1.2 4.0
NF dB
Figure VCE = 5 V, IC = 200 μA,
BC850 1.4 3.0
RG = 2 kΩ, f = 30 to 15000 Hz

Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%

hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC846 / BC847 / BC848 / BC850 Rev. 1.9 3
 BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics

100 1000

IB = 400μA o VCE = 5V
TA = 150 C
IB = 350μA
IC[mA], COLLECTOR CURRENT

80

hFE, DC CURRENT GAIN

IB = 300μA
o
TA = 25 C
IB = 250μA
60

IB = 200μA 100
o
TA = -55 C
40 IB = 150μA

IB = 100μA
20

IB = 50μA

0 10
0 4 8 12 16 20 0.1 1 10 100 1000

IC [mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC Current Gain

1 10

IC = 10IB IC = 20IB
VCE(SAT) [V], COLLECTOR-EMITTER
VCE(SAT) [V], COLLECTOR-EMITTER

SATURATION VOLTAGE
SATURATION VOLTAGE

0.1
o
TA = 150 C
0.1
o o
TA = 25 C TA = 150 C
o
TA = -55 C o
o
TA = 25 C
TA = -55 C

0.01 0.01
0.1 1 10 100 1000 0.1 1 10 100 1000

IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT

Figure 3. Currector-Emitter Saturation Voltage Figure 4. Currector-Emitter Saturation Voltage

VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE
VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE

1.2 1.2

IC = 10IB IC = 20IB

1.0 1.0

0.8 o 0.8
TA = -55 C TA = -55 C
o

o o
0.6 TA = 25 C 0.6
TA = 25 C

0.4 o 0.4 o
TA = 150 C TA = 150 C

0.2 0.2
0.1 1 10 100 1000 0.1 1 10 100 1000

IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC846 / BC847 / BC848 / BC850 Rev. 1.9 4
 BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)

100

100 VCE = 5V
IC [mA], COLLECTOR CURRENT

f=1MHz

Cob[pF], CAPACITANCE
10
10

o o o
TA = 150 C TA = 25 C TA = -55 C 1
1

0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000

VBE(ON) [V], BASE-EMITTER ON VOLTAGE

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

1000

VCE=5V

100

10

1
0.1 1 10 100

IC[mA], COLLECTOR CURRENT

Figure 9. Current Gain Bandwidth Product

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC846 / BC847 / BC848 / BC850 Rev. 1.9 5
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Rev. I76

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