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    Advanced power elctroncs exm

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    Getahun Shanko Kefeni

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    © All Rights Reserved
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    Advanced power elctroncs exm

    Uploaded by

    Getahun Shanko Kefeni
    2 views2 pages

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    © © All Rights Reserved

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    © All Rights Reserved
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    Download as pdf or txt
    2 views2 pages

    Advanced power elctroncs exm

    Uploaded by

    Getahun Shanko Kefeni

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    Advanced Power Electronics (PCE - 6238), Home take exam-1, Total marks = 40%

    Instructions:
     The question paper comprises of four questions, attempt all questions on the answer sheets.
     Total-time allowed: 3 hours and 40 minutes.
     Different question papers are set for each of the student with codes. Please, attempt the questions on the
    question paper with the corresponding codes assigned to you.
     Submission time is before 12:00 (Ethiopian time afternoon).
     Failed to submit before the specified time and change of codes may result in zero marks.

    Q1) 10%
    (a) An ideal power semiconductor switch may have the characteristics: have a high di/dt, tending to infinity.
    That is, the switch must be capable of handling a rapid rise of the current through it. Write the practical power
    semiconductor switch counter part of this characteristic and explain diagrammatically.
    (b) Explain the differences in the gating characteristics of thyristors and transistors.
    (c) Explain why do the MOSFETs are not require negative gate voltage during turn off and explain why does
    the concept of saturation differ in BJT and MOSFETs.
    (d) Explain holding current of an SCR (thyristor).

    Q2) 10%
    (a) Given voltage across a power diode, VD < 0 (< magnitude of breakdown voltage), emission coefficient, n
    =1 and thermal voltage, VT = 25.7mV. Determine the approximate expression for diode current, ID and draw
    the i-v steady-state characteristic of the diode.
    (b) Two diodes are connected in series and the voltage across each diode is maintained the same by
    connecting a voltage-sharing resistor, such that VD1 = VD2 = 2000 V and R1 = 100kΩ. The v-i
    characteristics of the modes are shown. Determine the leakage currents of each diode and the resistance R2
    across diode D2.

    1
    Q3) 10%
    (a) What are the advantages of a three-phase rectifier over a single-phase rectifier?
    (b) Consider a three-phase six-pulse fully controlled full-bridge rectifier (ac-dc converter) circuit with resistive
    load.
    (i) Draw the equivalent circuit diagram of the rectifier.
    (ii) Draw the output-voltage waveform for delay angles of 45° and 00.
    (iii) Drive an expression for average output voltage.

    Q4) 10%

    (a) Given below (b) part (block-diagrams) of the closed loop switch mode dc-dc converter given below (a).

    (a)

    (b)
    Given: Vo (desired) = 10V and Vo (actual) = 9.5.
    For the repetitive waveform of saw tooth waveform: peak amplitude =1 and period of 40µs.
    Based on the given information draw the waveforms of: (i) vcontrol, (ii) repetitive carrier signal and (iii) output of
    the comparator at least for five periods all in one plot.

    (b) The boost converter in the circuit diagram below has an input voltage, Vs = 6 V. The average output
    voltage, Va = 15V and average load current, Ia = 0.5 A. The switching frequency is 20 kHz. If L = 250 µH and
    C = 440 µF, determine (i) the duty cycle k (ii) the ripple current of inductor, ΔI, (iii) the peak current of
    inductor and (iv) draw the waveforms: voltage across the switch (MOSFET), source current, capacitor current
    (ic) and voltage across the capacitor all in one plot.

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