¡ Semiconductor 1A

MSM27C452CZ
262,144-Word x 16-Bit or 524,288-Word x 8-Bit
8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM

DESCRIPTION

The MSM27C452CZ is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its
configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.
The MSM27C452CZ operates on a single +5V power supply and is TTL compatible. The MSM27C4
52CZ provides Page mode which can greatly reduce the read access time. Since the MSM27C452
CZ operates asynchronously , external clocks are not required , making this device easy-to-use. The
MSM27C452CZ is suitable as large-capacity fixed memory for microcomputers and data terminals. It
is manufactured using a CMOS double silicon gate technology and is offered in 40-pin DIP , 40-pin
SOP or 44-pin TSOP packages.

FEATURES

• 262,144 word x 16bit / 524,288 word x 8bit electrically switchable configuration

• Single +5V power supply
• Access time 80ns
Page mode access time 50ns
• Input / Output TTL compatible
• Three-state output
• Packages 40-pin plastic DIP (DIP40-P-600-2.54)
40-pin plastic SOP (SOP40-P-525-1.27-K)
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K)

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 MSM27C452CZ

PIN CONFIGURATION (TOP VIEW)

NC 1 44 NC
NC 2 43 NC
A17 1 40 A8 A17 1 40 A8 A17 3 42 A8
A7 2 39 A9 A7 2 39 A9 A7 4 41 A9
A6 3 38 A10 A6 3 38 A10 A6 5 40 A10
A5 4 37 A11 A5 4 37 A11 A5 6 39 A11
A4 5 36 A12 A4 5 36 A12 A4 7 38 A12
A3 6 35 A13 A3 6 35 A13 A3 8 37 A13
A2 7 34 A14 A2 7 34 A14 A2 9 36 A14
A1 8 33 A15 A1 8 33 A15 A1 10 35 A15
A0 9 32 A16 A0 9 32 A16 A0 11 34 A16
CE 10 31 BYTE/Vpp CE 10 31 BYTE/Vpp CE 12 33 BYTE/Vpp
VSS 11 30 VSS VSS 11 30 VSS VSS 13 32 VSS
OE 12 29 D15/A-1 OE 12 29 D15/A-1 OE 14 31 D15/A-1
D0 13 28 D7 D0 13 28 D7 D0 15 30 D7
D8 14 27 D14 D8 14 27 D14 D8 16 29 D14
D1 15 26 D6 D1 15 26 D6 D1 17 28 D6
D9 16 25 D13 D9 16 25 D13 D9 18 27 D13
D2 17 24 D5 D2 17 24 D5 D2 19 26 D5
D10 18 23 D12 D10 18 23 D12 D10 20 25 D12
D3 19 22 D4 D3 19 22 D4 D3 21 24 D4
D11 20 21 VCC D11 20 21 VCC D11 22 23 VCC

40-pin DIP 40-pin SOP 44-pin TSOP

PIN NAMES FUNCTIONS

D15/A-1 Data output / Address input
A0 - A17 Address input
D0 - D14 Data output
CE Chip enable
OE Output enable
VCC Power supply voltage
VSS GND
BYTE/VPP Mode switch / Program power supply voltage
NC Non connection

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MSM27C452CZ

BLOCK DIAGRAM
A-1

X8/X16 Switch

CE OE BYTE/VPP

CE OE PGM

A0
Row Decoder

A1 Memory Matrix
A2
A3
A4
A5 262,144X16-Bit or 524,288X8-Bit
Address Buffer

A6
A7
A8
A9
A10
A11
Column Decoder

A12 Multiplexer & Page Data Latch

A13
A14
A15
A16
A17 Output Buffer

D0 D2 D4 D6 D8 D10 D12 D14

D1 D3 D5 D7 D9 D11 D13 D15

In 8-bit output mode, these pins are

three-stated and pin D15 functions
as the A-1 address pin.

FUNCTION TABLE

MODE CE OE BYTE/VPP VCC D0 - D7 D8 - D14 D15/A-1

READ (16-Bit) L L H DOUT
READ (8-Bit) L L L DOUT Hi-Z L/H
4.5V
H to
OUTPUT DISABLE L H Hi-Z
L 5.5V *
H
STAND-BY H * Hi-Z
L *
PROGRAM L H DIN
PROGRAM INHIBIT H H 11.5V 6.25V Hi-Z
PROGRAM VERIFY H L DOUT
* : Don't Care

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 MSM27C452CZ

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Condition Value Unit

Operating temperature under bias Topr 0 to 70 °C
-
Storage temperature Tstg -55 to 125 °C
Input voltage VI -0.5 to VCC + 0.5 V
Output voltage VO -0.5 to VCC + 0.5 V
relative to VSS
Power supply voltage VCC -0.5 to 7 V
Program power supply voltage VPP -0.5 to 12.5 V
Power dissipation per package PD - 1.0 W

RECOMMENDED OPERATING CONDITIONS FOR READ

(Ta=0 to 70°C)
Parameter Symbol Condition Min. Typ. Max. Unit
VCC power supply voltage VCC 4.5 - 5.5 V
VPP power supply voltage VPP -0.5 - VCC+0.5 V
VCC=4.5V - 5.5V
Input "H" level VIH 2.2 - VCC+0.5 V
Input "L" level VIL -0.5 - 0.8 V
Voltage is relative to Vss

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MSM27C452CZ

ELECTRICAL CHARACTERISTICS (Read operation)

DC Characteristics
(VCC=5V±0.5V, Ta=0 to 70°C)
Parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current ILI VI=0 to Vcc - - 10 µA
Output leakage current ILO VO=0 to Vcc - - 10 µA
VCC power supply current ICS1 CE=VCC - - 50 µA
(Standby) ICS2 CE=VIH - - 1 mA
VCC power supply current CE=VIL , OE=VIH
ICCA - - 100 mA
(Read) tc=80ns
VPP power supply current IPP VPP=VCC - - 50 µA
Input "H" level VIH - 2.2 - VCC+0.5 V
Input "L" level VIL - -0.5 - 0.8 V
Output "H" level VOH IOH=-400µA 2.4 - - V
Output "L" level VOL IOL=2.1mA - - 0.45 V
Voltage is relative to Vss

AC Characteristics
(VCC=5V±0.5V, Ta=0 to 70°C)
Parameter Symbol Condition Min. Max. Unit
Random access cycle time TC - 80 - ns
Address access time TACC CE=OE=VIL - 80 ns
Page set up time TPSET NOTE(1) 100 - ns
Page access cycle time TPC - 50 - ns
Page access time TPAC - - 50 ns
CE access time TCE OE=VIL - 100 ns
OE access time TOE CE=VIL - 50 ns
TCHZ OE=VIL 0 40 ns
Output disable time
TOHZ CE=VIL 0 35 ns
Output hold time TOH CE=OE=VIL 0 - ns
NOTE(1) TPSET is defined as the end of either CE trailing edge or address transition in random access
term until the first page address transition.

Measurement conditions
Input signal level 0V/3V
Input timing reference level 0.8V/2.0V
Output load 1TTL gate + 100pF
Output timing reference level 0.8V/2.0V

1.7V

400

Output
100pF (including jig capacitance)

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 MSM27C452CZ

TIMING CHART

NORMAL MODE READ CYCLE

tC

ADDRESS
tOH
tCE

CE

tCHZ
tOE

OE

tACC tOHZ

DOUT Valid Data

Hi-Z Hi-Z

PAGE MODE READ CYCLE

tC

A3 - A17
tPSET
tPSET tPC tPC
A0 - A2 (Word mode)
A-1 - A2 (Byte mode)
tOH
tCE

CE

tCHZ

tOE

OE

tACC tPAC tPAC tOHZ

DOUT
Hi-Z Hi-Z

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MSM27C452CZ

ELECTRICAL CHARACTERISTICS (Programming operation)

DC Characteristics

(Ta=25°C±5°C)
Parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current ILI VI=VCC+0.5V - - 10 µA
VPP power supply current (Program) IPP2 CE=VIL - - 50 mA
VCC power supply current ICC - - - 80 mA
Input "H" level VIH - 2.2 - VCC+0.5 V
Input "L" level VIL - -0.5 - 0.8 V
Output "H" level VOH IOH=-400µA 2.4 - - V
Output "L" level VOL IOL=2.1mA - - 0.45 V
Program voltage VPP - 11.25 11.5 11.75 V
VCC power supply voltage VCC - 6.0 6.25 6.5 V
Voltage is relative to Vss

AC Characteristics
(Vcc=6.25V±0.25V,Vpp=11.5V±0.25V,Ta=25°C±5°C)
Parameter Symbol Condition Min. Typ. Max. Unit
Address set-up time TAS - 2 - - µs
OE set-up time TOES - 2 - - µs
Data set-up time TDS - 2 - - µs
Address hold time TAH - 0 - - µs
Data hold time TDH - 2 - - µs
Output float delay from OE TDFP - 0 - 130 ns
VPP voltage set-up time TVS - 2 - - µs
Program pulse width TPW - 23 25 27 µs
Data valid from OE TOE - - - 150 ns

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 MSM27C452CZ

Programming Waveform

A0 - A17
tAH
tAS tPW

CE
tOES tDFP

OE tDS tDH

tOE

D0 - D15 DIN DOUT

tVS

BYTE/VPP
Program Program Verify

PIN Capacitance

(VCC=5V, Ta=25°C, f=1MHz)

Parameter Symbol Condition Min. Typ. Max. Unit
Input CIN1 - - 12
VI=0V
BYTE/VPP CIN2 - - 60 pF
Output COUT VO=0V - - 15

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MSM27C452CZ

High Speed Programming Algorithm ( I )

Start

First Address

VCC=6.25V
VPP=11.5V

X=0

YES
X=10 ?

NO

Increment Address Program 25µs

X=X+1

NG
Verify (One Byte)

PASS

NO
Last Address ?

YES

VCC=5.5V
VPP=5.5V

NG
Compare All

PASS

VCC=4.5V
VPP=4.5V

NG
Compare All Device Failed

PASS
Device Passed

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 MSM27C452CZ

High Speed Programming Algorithm ( II )

Start

First Address

VCC=6.25V
VPP=11.5V

Program 25µs

NO
Increment Address Last Address ?

YES
First Address

X=0

NG
Verify (One Byte) X=X+1

PASS

NO YES
Increment Address Last Address ? X=10 ?

YES NO
VCC=5.5V
Program 25µs
VPP=5.5V

NG
Compare All

PASS

VCC=4.5V
VPP=4.5V

NG
Compare All

PASS
Device Passed Device Failed

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 Semiconductor

NOTICE

The information contained herein can change without notice owing to product and/or technical im-
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date.

The outline of action and examples for application circuits described herein have been chosen as an
explanation for the standard action and performance of the product. When planning to use the product,
please ensure that the external conditions are reflected in the actual circuit, assembly, and program
designs.

When designing your product, please use our product below the specified maximum ratings and within
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Copyright 1998 Oki Electric Industry Co., Ltd.

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