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    Elecdevice Final 2022(a)Spring

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    Hüseyin Baran Boyraz

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    © All Rights Reserved
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    Elecdevice Final 2022(a)Spring

    Uploaded by

    Hüseyin Baran Boyraz
    1 views1 page

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    1 views1 page

    Elecdevice Final 2022(a)Spring

    Uploaded by

    Hüseyin Baran Boyraz

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    Name and Last Name: Electronic Materials and Device physics

    Final 2022-Spring

    Do not cheat, nor copy down somebody else’s answer sheet. Each question has the same point.
    Give clear, readable, sufficient, and concise answer to get credit.

    To get credit must show all your work clearly and sufficiently! Each question is 10 point.

    1) Take a MOS capacitor consists of a crystalline Si where its band diagram


    shown. Note that graph may not be to scale. Let ℇ𝑜𝑥 = 3.15 × 106 𝑉/
    𝑐𝑚, 𝑡𝑜𝑥 = 2.5 𝑛𝑚, 𝐾𝑜𝑥 = 4.0, 𝐾𝑆𝑖 = 12, and 𝐸𝐺 = 1.12 𝑒𝑉. Other Si
    parameters given or obtained from the bottom table.
    a) Find the doping density, write its type and the sign of gate voltage.
    b) What is the electric field in the semiconductor right next to the
    oxide (at semiconductor interface)? Check if the strong inversion
    mode or something else.
    c) Assume that |𝜙𝑠 | = 0.833 V. What is the depletion width (in the semiconductor)?
    d) What is the electrostatic potential voltage of the gate electrode with respect to the
    semiconductor (let the 𝑉𝐹𝐵 = 0) for oxide field given above?
    2) Consider Metal-Silicon MS junction. Assume the metal of 4.73 eV work function and the Si has
    electron affinity of 4.07 eV. Answer the following questions.
    a) Consider Si of donor doped with a density 3 × 1017 𝑐𝑚−3. Draw energy band diagram,
    determine whether it is Schottky barrier or else. If Schottky Barrier calculate its height,
    indicate in your plot, find also contact (built in) voltage and indicate in the plot.
    b) Same question as (a) but this time an acceptor doped with same density.
    c) If MOS capacitor in question 1 above made with metal part given here. Calculate the flat
    band voltage (ignore surface fix-charges). Plot the MOS capacitor vs gate voltage, indicate
    FB, and regions (accumulations, depletions, inversion). Draw your plot in high frequency.
    3) The electric field versus position for a crystalline silicon (𝐾𝑠 = 12) pn homojunction at room
    temperature (𝑇 = 300 K) is given by the following graph (may not be precisely to scale). For this
    problem, assume that the junction is abrupt at 𝑥 = 0 with a flat doping profile on
    each side (p-doped on the left, and n-doped on the right), ℇ(0) = −10 𝑘𝑉/𝑐𝑚, n-
    type depletion length 𝑥𝑛 = 620 nm, and the p-type depletion length 𝑥𝑝 =
    100 𝑛𝑚.
    a) What is the built-in voltage 𝑉0 obtained using depletion approximation?
    b) What is the value of 𝑁𝐴 in the p-type region, and 𝑁𝐷 in the n-type region, if
    the depletion approximation is used?
    c) Using the depletion approximation, calculate the 𝑛𝑝 product just outside the right side of
    the junction (at 𝑥 = 𝑥𝑛+ ). How would this value change if you applied a forward bias of
    0.28 𝑉?

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