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    IRF512-Inchange Semiconductor

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    amshahid

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    © All Rights Reserved
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    IRF512-Inchange Semiconductor

    Uploaded by

    amshahid
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    1 views2 pages

    IRF512-Inchange Semiconductor

    Uploaded by

    amshahid

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor isc Product Specification

    isc N-Channel Mosfet Transistor IRF512

    ·FEATURES
    ·Low RDS(on)
    ·VGS Rated at ±20V
    ·Silicon Gate for Fast Switching Speed
    ·Rugged
    ·Low Drive Requirements

    ·DESCRITION
    ·Designed especially for high voltage,high speed applications,
    such as off-line switching power supplies , UPS,AC and DC
    motor controls,relay and solenoid drivers.

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 100 V

    VGS Gate-Source Voltage-Continuous ±20 V

    ID Drain Current-Continuous 4.9 A

    IDM Drain Current-Single Plused 18 A

    PD Total Dissipation @TC=25℃ 43 W

    Tj Max. Operating Junction Temperature -55~175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W

    Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

    PDF pdfFactory Pro www.fineprint.cn


    INCHANGE Semiconductor isc Product Specification

    isc N-Channel Mosfet Transistor IRF512

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.4A 0.54 Ω

    IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA

    IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS=0 250 uA

    VSD Forward On-Voltage IS= 5.6A; VGS=0 2.0 V

    Ciss Input Capacitance 135 pF

    VDS=25V,VGS=0V,
    Coss Output Capacitance 80 pF
    F=1.0MHz

    Crss Reverse Transfer Capacitance 20 pF

    ·SWITCHING CHARACTERISTICS (TC=25℃)

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    Td(on) Turn-on Delay Time 8 11 ns

    Tr Rise Time 25 36 ns
    VDD=50V,ID=5.6A
    VGS=10V,RGEN=24Ω
    RGS=24Ω
    Td(off) Turn-off Delay Time 15 21 ns

    Tf Fall Time 12 21 ns

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

    PDF pdfFactory Pro www.fineprint.cn

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