Transistors

2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
■ Features 4.0±0.2 2.0±0.2

3.0±0.2
• Optimum for high-density mounting

(0.8)
• Allowing supply with the radial taping

7.6
0.75 max.
• Low collector-emitter saturation voltage VCE(sat)

(0.8)
■ Absolute Maximum Ratings Ta = 25°C

15.6±0.5
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 25 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 12 V
0.45+0.20
–0.10
Collector current IC 0.5 A (2.5) (2.5) 0.45+0.20
–0.10

Peak collector current ICP 1 A 0.7±0.1

Collector power dissipation PC 300 mW 1: Emitter

2: Collector
Junction temperature Tj 150 °C 1 2 3
3: Base
Storage temperature Tstg −55 to +150 °C NS-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 V
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 nA
Forward current transfer ratio *1 hFE1 *2 VCE = 2 V, IC = 0.5 A 200 800 
hFE2 VCE = 2 V, IC = 1 A 60
Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 20 mA 0.13 0.40 V
Base-emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 20 mA 1.2 V
Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 10 pF
(Common base, input open circuited)
ON resistance *3 Ron 0.6 Ω

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank R S T No rank
hFE1 200 to 350 300 to 500 400 to 800 200 to 800

*3: Ron Measurement circuit 1 kΩ

IB = 1 mA
f = 1 kHz
V = 0.3 V
VB VV VA

VB
Ron = × 1 000 (Ω)
VA − VB

Publication date: April 2003 SJC00222BED 1

2SD1450

PC  Ta IC  VCE VCE(sat)  IC
500 2.4 100
IC / IB = 25

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C
Collector power dissipation PC (mW)

2.0
400 10

Collector current IC (A)

1.6
IB = 4.0 mA
300 3.5 mA
1.2 3.0 mA 1
2.5 mA
2.0 mA Ta = 75°C
200 0.8
1.5 mA 25°C
0.1 −25°C
1.0 mA
0.4
100 0.5 mA

0 0.01
0 40 80 120 160 0 2 4 6 8 10 12 0.01 0.1 1 10
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A)

VBE(sat)  IC hFE  IC fT  I E
100 1 200 400
IC / IB = 10 VCE = 2 V VCB = 10 V
Base-emitter saturation voltage VBE(sat) (V)

Ta = 25°C
1 000
Forward current transfer ratio hFE

Transition frequency fT (MHz)

10 300
800
25°C Ta = 75°C
Ta = −25°C
1 600 25°C 200
75°C
−25°C
400
0.1 100
200

0.01 0 0
0.01 0.1 1 10 0.01 0.1 1 10 − 0.1 −1 −10 −100
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)

Cob  VCB NV  IC
20 120
C (pF)

IE = 0 VCE = 10 V
f = 1 MHz GV = 80 dB
Function = FLAT
(Common base, input open circuited) ob

Ta = 25°C
100
16
Noise voltage NV (mV)

80
Rg = 100 kΩ
12
Collector output capacitance

60

8 22 kΩ
40
5 kΩ

4
20

0 0
1 10 100 0.01 0.1 1
Collector-base voltage VCB (V) Collector current IC (mA)

2 SJC00222BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.