Silicon NPN Triple Diffusion Planar Type: Power Transistors
Silicon NPN Triple Diffusion Planar Type: Power Transistors
Silicon NPN Triple Diffusion Planar Type: Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
φ 3.16±0.1
■ Features
11.0±0.5
• High collector-emitter voltage (Base open) VCEO
3.8±0.3
3.05±0.1
• High transition frequency fT
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 250 V 0.75±0.1
0.5±0.1
Collector-emitter voltage (Base open) VCEO 250 V 0.5±0.1 1.76±0.1
4.6±0.2
2.3±0.2
Emitter-base voltage (Collector open) VEBO 7 V
1: Emitter
Collector current IC 100 mA 1 2 3 2: Collector
3: Base
Peak collector current ICP 150 mA
TO-126B-A1 Package
Collector power dissipation PC 1.2 *1 W
4 *2
PC Ta IC VCE IC VBE
5 120 120
(1)With a 100×100×2mm TC=25˚C VCE=10V
Al heat sink 1.8mA
IB=2.0mA
Collector power dissipation PC (W)
0 0 0
0 40 80 120 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)
IC I B VCE(sat) IC IB VBE
120 100 3.0
Collector-emitter saturation voltage VCE(sat) (V)
IC/IB=10
VCE=10V VCE=10V
TC=25˚C TC=25˚C
100 2.5
Collector current IC (mA)
10
60 1 1.5
TC=100˚C
40 25˚C 1.0
0.1
20 –25˚C 0.5
0 0.01 0
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA) Collector current IC (A) Base-emitter voltage VBE (V)
VCE=10V IE=0
VCB=10V
f=1MHz
f=200MHz
(Common base, input open circuited) ob
TC=25˚C
200
Forward current transfer ratio hFE
TC=25˚C
Transition frequency fT (MHz)
8
120
TC=100˚C
160
6
Collector output capacitance
120 80
25˚C
4
80
–25˚C
40
2
40
0 0 0
0.01 0.1 1 10 −1 −10 −100 1 10 100
Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V)
2 SJD00098BED
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2002 JUL