PROFET® BTS 425 L1

Smart Highside Power Switch

Features Product Summary
• Overload protection
Overvoltage protection Vbb(AZ) 43 V
• Current limitation
• Short circuit protection Operating voltage Vbb(on) 5.0 ... 24 V
• Thermal shutdown On-state resistance RON 60 mΩ
• Overvoltage protection (including load dump) Load current (ISO) IL(ISO) 7.0 A
• Reverse battery protection1)
Current limitation IL(SCr) 17 A
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
TO-220AB/5
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
5 5
• Electrostatic discharge (ESD) protection
5
1 1
Standard Straight leads SMD
Application
• µC compatible power switch with diagnostic
feedback for 12 V DC grounded loads
• Most suitable for resistive and lamp loads

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

+ V bb 3
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
OUT
Voltage Charge pump
5
sensor Level shifter Temperature
Rectifier sensor
2 IN
Open load
Short to Vbb Load
ESD Logic
detection

4 ST R
O

GND

GND PROFET
1
Signal GND Load GND

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 02.97
 BTS 425 L1
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT O Output to the load
(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 43 V
Supply voltage for full short circuit protection Vbb 24 V
Tj Start=-40 ...+150°C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) 60 V
RI3)= 2 Ω, RL= 1.7 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC), TC ≤ 25 °C Ptot 75 W
Electrostatic discharge capability (ESD) IN: VESD 1.0 kV
(Human Body Model) all other pins: 2.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN ±2.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagrams page 6

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case: RthJC -- -- 1.67 K/W
junction - ambient (free air): RthJA -- -- 75
SMD version, device on PCB5): -- 34 --

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group 2
 BTS 425 L1

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)
IL = 2 A Tj=25 °C: RON -- 50 60 mΩ
Tj=150 °C: 100 120
Nominal load current, ISO Norm (pin 3 to 5) 5.8 7.0
VON = 0.5 V, TC = 85 °C IL(ISO) -- A
Output current (pin 5) while GND disconnected or IL(GNDhigh) -- -- 10 mA
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7
Turn-on time IN to 90% VOUT: ton 80 200 400 µs
Turn-off time IN to 10% VOUT: toff 80 230 450
RL = 12 Ω, Tj =-40...+150°C
Slew rate on dV /dton 0.1 -- 1 V/µs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off -dV/dtoff 0.1 -- 1 V/µs
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C

Operating Parameters
Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 24 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 5.0 V
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 10 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.2 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 24 -- 34 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 23 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V
Overvoltage protection7) Tj =-40...+150°C: Vbb(AZ) 42 47 -- V
Ibb=40 mA
Standby current (pin 3) Tj=-40...+25°C: Ibb(off) -- 10 25 µA
VIN=0 Tj= 150°C: -- 12 28
Leakage output current (included in Ibb(off)) IL(off) -- -- 12 µA
VIN=0
Operating current (Pin 1)8), VIN=5 V, IGND -- 1.8 3.5 mA
Tj =-40...+150°C

6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
7) See also VON(CL) in table of protection functions and circuit diagram page 7.
8) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group 3
 BTS 425 L1
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Protection Functions
Initial peak short circuit current limit (pin 3 to 5) IL(SCp)
Tj =-40°C: 27 37 47 A
Tj =25°C: 20 30 40
Tj =+150°C: 12 18 25
Repetitive short circuit shutdown current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 9) -- 17 -- A
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K
Reverse battery (pin 3 to 1) 9) -Vbb -- -- 32 V
Reverse battery voltage drop (Vout > Vbb)
IL = -2 A Tj=150 °C: -VON(rev) -- 610 -- mV

Diagnostic Characteristics
Open load detection current Tj=-40 °C: IL (OL) 150 600 950 mA
(on-condition, ) Tj=25..150°C: 150 450 750
Open load detection voltage10) (off-condition) VOUT(OL) 2 3 4 V
Tj=-40..150°C:
Internal output pull down
(pin 5 to 1), VOUT=5 V, Tj=-40..150°C RO 4 10 30 kΩ

9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
10) External pull up resistor required for open load detection in off state.

Semiconductor Group 4
 BTS 425 L1
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Input and Status Feedback11)

Input resistance RI 2.5 3.5 6 kΩ
Tj=-40..150°C, see circuit page 6
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.7 -- 3.5 V
Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.5 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current (pin 2), VIN = 0.4 V, IIN(off) 1 -- 50 µA
Tj =-40..+150°C
On state input current (pin 2), VIN = 3.5 V, IIN(on) 20 50 90 µA
Tj =-40..+150°C
Delay time for status with open load after switch td(ST OL4) 100 520 1000 µs
off
(see timing diagrams, page 10), Tj =-40..+150°C
Status invalid after positive input slope td(ST) -- 250 600 µs
(open load) Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150°C, IST = +1.6 mA: -- -- 0.6

11) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group 5
 BTS 425 L1

Truth Table
Input- Output Status
level level 425 L1
426 L1
Normal L L H
operation H H H
12)
Open load L H (L13))
H H L
Short circuit L H L14)
to Vbb H H H (L15))
Overtem- L L H
perature H L L
Under- L L H
voltage H L H
Overvoltage L L H
H L H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10)

Terms Status output

Ibb +5V
3
I IN
Vbb R ST(ON)
IN ST
2 IL VON
PROFET OUT
I ST 5
ESD-
ST
4 ZD
V VST GND GND
IN
V 1 IGND
bb VOUT
R ESD-Zener diode: 6.1 V typ., max 5 mA;
GND
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Input circuit (ESD protection)

R overvoltage output clamp

I
IN
+ V bb

V
Z
ESD-ZD I
I
I

GND VON

OUT
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in GND PROFET
a drift of the zener voltage (increase of up to 1 V).

VON clamped to 47 V typ.

12) Power Transistor off, high impedance

13) with external resistor between pin 3 and pin 5
14) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
15) Low resistance to V may be detected in ON-state by the no-load-detection
bb
Semiconductor Group 6
 BTS 425 L1
GND disconnect

Overvolt. and reverse batt. protection

+ Vbb 3
Vbb
V
Z2 IN
R IN RI 2
IN
PROFET OUT
Logic 5

ST
ST
R ST 4
GND
V
Z1 PROFET V V V 1 V
bb IN ST GND
GND

R GND
In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Signal GND
Due to VGND >0, no VST = low signal available.
VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ. GND disconnect with GND pull up

3
Open-load detection Vbb
ON-state diagnostic condition: VON < RON * IL(OL); IN IN
2
high OUT
PROFET
5
+ V bb ST
4
GND
1

V V V
VON V IN ST GND
bb
ON

If VGND > VIN - VIN(T+) device stays off

OUT Due to VGND >0, no VST = low signal available.
Logic Open load
unit detection

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

R
EXT

OFF

V
OUT

Logic Open load

R
detection O
unit

Signal GND

Semiconductor Group 7
 BTS 425 L1
Typ. transient thermal impedance chip case
ZthJC = f(tp)
ZthJC [K/W]
10

D=
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0

0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Typ. trans. thermal impedance chip to ambient air

ZthJA = f(tp), Device on 50mm * 50mm * 1.5mm epoxy
PCB FR4 with 6cm2 (one layer, 70µm thick) copper
area for Vbb connection. PCB is vertical without blown
air.
ZthJA [K/W]
100

10

D=
0.5
0.2
1
0.1
0.05
0.02
0.01
0

0.1
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3

tp [s]

Semiconductor Group 8
 BTS 425 L1
Timing diagrams
Figure 3a: Short circuit
Figure 1a: Vbb turn on: shut down by overtempertature, reset by cooling

IN IN

V
bb
IL
I L(SCp)
IL(SCr)
V
OUT

ST open drain

ST t
t

proper turn on under all conditions

Heating up may require several milliseconds, depending on
external conditions
Figure 2a: Switching a lamp,

Figure 4a: Overtemperature:

Reset if Tj <Tjt
IN

IN
ST

ST
V
OUT

V
OUT

I
L

t T
J

Semiconductor Group 9
 BTS 425 L1
Figure 5a: Open load: detection in ON-state, turn Figure 5c: Open load: detection in ON- and OFF-state
on/off to open load (with REXT), turn on/off to open load

IN IN

t t d(ST OL4)
d(ST) t
ST ST d(ST)

V V
OUT OUT

I I
L L
open
open
t t

The status delay time td(ST OL4) allows to ditinguish between

the failure modes "open load" and "overtemperature".
Figure 6a: Undervoltage:
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state

IN

IN

V
bb
t t
d(ST OL1) d(ST OL2) Vbb(u cp)
ST V
bb(under)
Vbb(u rst)

V
OUT V OUT

normal open normal ST open drain

I
L

t
t

td(ST OL1) = 20 µs typ., td(ST OL2) = 10 µs typ

Semiconductor Group 10
 BTS 425 L1
Figure 6b: Undervoltage restart of charge pump

V on VON(CL)
off-state

on-state

off-state
V
bb(over)

V V
bb(u rst) bb(o rst)

V
bb(u cp)

V bb(under)

V bb

charge pump starts at Vbb(ucp) =5.6 V typ.

Figure 7a: Overvoltage:

IN

Vbb V ON(CL) Vbb(over) V bb(o rst)

V
OUT

ST

Semiconductor Group 11
 BTS 425 L1
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5 Ordering code SMD TO-220AB/5, Opt. E3062 Ordering code
BTS425L1 Q67060-S6100-A2 BTS425L1 E3062A T&R: Q67060-S6100-A3

Components used in life-support devices or systems must be

expressly authorised for such purpose! Critical components16)
of the Semiconductor Group of Siemens AG, may only be used in
life supporting devices or systems17) with the express written
approval of the Semiconductor Group of Siemens AG.

TO-220AB/5, Option E3043 Ordering code

BTS425L1 E3043 Q67060-S6100-A4

16) A critical component is a component used in a life-support

device or system whose failure can reasonably be expected to
cause the failure of that life-support device or system, or to
affect its safety or effectiveness of that device or system.
17) Life support devices or systems are intended (a) to be
implanted in the human body or (b) support and/or maintain
and sustain and/or protect human life. If they fail, it is
reasonably to assume that the health of the user or other
persons may be endangered.

Semiconductor Group 12