Class 12 Chmistry CH 1 Notes
Class 12 Chmistry CH 1 Notes
Class 12 Chmistry CH 1 Notes
positions.
• Majority of crystalline solids, including metals, are polycrystalline in nature.
Single granule of a polycrystalline solid is made of many single crystals or
crystallites packed together with different orientations.
• Single crystals are difficult to obtain. Diamond is an example of naturally formed
single crystal.
They have definite heat of fusion. They do not have definite heat of fusion.
• Each carbon atom in graphite is sp2 hybridized and covalently bonded to other
three sp2 hybridized carbon atoms forming bonds and the fourth electron in
2pz orbital of each carbon atom is used in the formation of a bond. This
results in the formation of hexagonal rings in two dimensions.
• In graphite, the layers consisting of hexagonal carbon network are held
together by weak van der Waal’s forces imparting softness.
• The electrons in bonds in the ring are delocalized and free to move in the
delocalised molecular orbitals giving good electrical conductance.
Remember.
• Both ionic and covalent crystals are hard and have high melting and boiling
points. We can use electrical properties to distinguish between them. Both
are insulators at low temperature.
• Ionic solids become good conductors only at high temperature, above their
melting points.
• The conductivity of covalent solids is in general low and increases with
temperature. However, there is no abrupt rise in conductivity when
substance is melted.
Allotropes : When a substance exists in two or more forms then they are called
allotropes. They are polymorphous. For example, carbon has allotropes diamond and
graphite.
Molecular crystals : These are crystals in which the constituent particles are
molecules (or unbonded single atoms) of the same substance held together by
intermolecular forces of attraction. For example, solidified C12, CO2, etc.
Characteristics of molecular crystals :
• The constituent particles of these solids are molecules (or unbonded single
atoms) of the same substance.
• The atoms within the molecules are bonded by covalent bonds.
• The molecules are held together by intermolecular forces of attraction.
Metallic crystals : These are crystalline solids formed by atoms of the same
metallic element, held together by a metallic bond.
Characteristics of metallic crystals ;
• Metallic crystals are solids formed by atoms of the same metallic element held
together by metallic bonds.
• Metallic crystals have high melting point and boiling point.
• Metals are malleable, that is, they can be hammered into thin sheets.
• Metals are ductile, that is, they can be drawn into wires.
• Metals have good electrical and thermal conductivity.
• Examples : metals such as Na, K, Ca, Li, Fe, Au, Ag, Co, etc.
Giant solid : Covalent solid formed by covalent bonds between neighbouring
constituent atoms of non-metallic solid is called a giant solid. For example, graphite.
Crystal Structure :
Lattice : Lattice is a geometrical arrangement of points in a three dimensional
periodic array.
Crystal lattice (space lattice) : A regular arrangement of the constituent particles
(atoms, ions or molecules) of a crystalline solid having similar environment in three
dimensional space is called crystal lattice or space lattice.
Lattice point : A position occupied by a crystal constituent particle like an atom, ion
or a molecule in the crystal lattice is called lattice point or lattice site.
0R
Any point at the intersection of the lines in the unit cell occupied by a constituent
particle like an atom, an ion or a molecule in the crystalline solid is called a lattice
point.
Basis of crystal lattice :
• A crystal structure is formed by attaching a constituent particle to lattice
points.
• The constituent particles attached to the lattice points form the basis of the
crystal lattice.
• The crystal structure is obtained by attaching a basis to each of the lattice
points.
This is represented by the following schematic equation :
Unit cell : It is the smallest repeating structural unit of a crystalline solid (or crystal
lattice) which when repeated in different directions produces the crystalline solid
(lattice).
• The crystal is considered to consist of an infinite number of unit cells.
• The unit cell possesses all the characteristics of the crystalline solid.
Parameters of a unit cell : . A unit cell is characterised by following parameters.
Edges or edge lengths : The intersection of two faces of crystal lattice is called as
edge. The three edges denoted by a, b and c represent the dimensions (lengths) of
the unit cell along three axes. These edges may or may not be mutually
perpendicular.
Angles between the edges (or planes) : There are three angles between the
edges of the unit cell represented as , and .
Cubic system : There are seven crystal systems according to the edges (a, b, c)
and angles (, , ).
• The constituents of the crystal may be present at comers, face centres, body
centres, edge centres and voids.
• By mathematical analysis, it has been proved that only fourteen different kinds
of space lattices are possible.
• Hence there are fourteen different ways of arrangement of the lattice basis.
• These fourteen lattices of seven crystal systems are called Bravais lattices.
Cubic lattice : For this, edges are a = b = c and angles are = = = 90°. In this
cubic system, there are three Bravais lattices. Lattice points in one unit cell
represent the positions of atoms, ions or molecules in the unit cell.
Simple (or primitive) cubic unit cell (SCC) : In this unit cell, atoms are present
only at 8 comers of the cube.
Number of atoms in primitive simple cubic (scc) unit cell :
In simple or primitive cubic unit cell, there are 8 atoms at 8 corners. Each comer
contributes 1/8th atom to the unit cell.
Number of atoms present in the unit cell = (1/8) X 8 = 1
Hence the volume of the unit cell is equal to the volume of one atom.
Body-centred cubic unit cell (BCC) : In this, atoms are present at 8 comers along
with one additional atom at the body-centre of the cube.
The names of fourteen Bravais lattices (unit cells) for each of the seven
crystal system are shown below.
1. Cubic :
2. Orthorhombic :
3. Tetragonal :
4. Monoclinic :
5. Rhombohedral :
6. Triclinic :
7. Hexagonal :
Remember...
Each corner particle of a cube is shared by 8 cubes, each face particle is shared by
2 cubes and each edge particle is shared by 4 cubes.
Relation for the density of the unit cell and radius of atom or sphere for the
Simple cubic (scc) crystal :
Consider a unit cell of a simple cubic crystal. It has 8 atoms at 8 corners of the unit
cell.
Total number of atoms in unit cell = (1/8) X 8 = 1
If a is the length of edge of cubic unit cell and r is the radius of the atom, then
r = a/2 or a = 2r.
Volume of the unit cell = a3 = (2r)3 = 8r3
If M is atomic mass of the element, then mass of one atom is M/NA where NA is
Avogadro number.
If there are ‘n’ atoms in one unit cell then,
Mass of unit cell = n x Mass of one atom = n x (M/NA)
𝒎𝒂𝒔𝒔 𝒐𝒇 𝒖𝒏𝒊𝒕 𝒄𝒆𝒍𝒍
Density of Unit Cell =
𝑽𝒐𝒍𝒖𝒎𝒆 𝒐𝒇 𝒖𝒏𝒊𝒕 𝒄𝒆𝒍𝒍
𝒏 × 𝑴/𝑵𝑨
ρ=
𝒂𝟑
𝒏×𝑴
ρ=
𝑵𝑨 × 𝒂𝟑
Relation for the density of the unit cell and radius of atom or sphere for the
Body centred cubic (bcc) crystal :
Consider a unit cell of body centred cubic (bcc) crystal. It has 8 atoms at 8 corners
and one additional atom at the centre of body of unit cell.
Number of atoms due to 8 comers = (1/8) X 8 = 1
Body centred atom, wholly belong to the unit cell.
Hence total number of atoms in the unit cell is two.
If M is atomic mass of the element, then mass of one atom is M/NA where NA is
Avogadro number.
Mass of unit cell = Mass of 2 atoms in unit cell
= 2(M/NA)
If a is the edge length or lattice parameter then,
Volume of cubic unit cell = a3
𝒎𝒂𝒔𝒔 𝒐𝒇 𝒖𝒏𝒊𝒕 𝒄𝒆𝒍𝒍
Density of Unit Cell =
𝑽𝒐𝒍𝒖𝒎𝒆 𝒐𝒇 𝒖𝒏𝒊𝒕 𝒄𝒆𝒍𝒍
𝟐 × 𝑴/𝑵𝑨
ρ=
𝒂𝟑
𝟐𝑴
ρ=
𝑵𝑨 × 𝒂𝟑
Relation for the density of the unit cell and radius of atom or sphere for the
Face centred cubic (fcc) crystal :
Consider a unit cell of face centred cubic (fcc) crystal.
It has 8 atoms at 8 comers and 6 atoms at 6 face centres.
1
Total number of atoms in unit cell = 1 ×8+ × 6 = 1+3=4
8 2
If M is atomic mass of the element, then mass of one atom is M/NA where NA is
Avogadro number.
Mass of unit cell = Mass of 4 atoms in unit cell
= 4(M/NA)
If a is the edge length or lattice parameter then,
Volume of cubic unit cell = a3
𝒎𝒂𝒔𝒔 𝒐𝒇 𝒖𝒏𝒊𝒕 𝒄𝒆𝒍𝒍
Density of Unit Cell =
𝑽𝒐𝒍𝒖𝒎𝒆 𝒐𝒇 𝒖𝒏𝒊𝒕 𝒄𝒆𝒍𝒍
𝟒 × 𝑴/𝑵𝑨
ρ=
𝒂𝟑
𝟒𝑴
ρ=
𝑵𝑨 × 𝒂𝟑
If the first row is labelled as A type, then second and all subsequent rows are also
identical, hence are of A type. Therefore this planar two dimensional close packing is
called AAAA…. type packing.
In this arrangement, each sphere is in contact with (or touching) four other spheres
around it, hence the coordination number of each sphere is four and the packing is
called two dimensional or planar square close packing. In this, packing efficiency is
52.4 %.
ABAB type two dimensional packing or hexagonal close packing :
In this arrangement, crests of the spheres of one row are placed into the depressions
or troughs formed between adjacent spheres of next row. This arrangement is
repeated consecutively throughout.
In this arrangement, crests of the spheres of one row are in contact with depressions
or troughs of next row.
If one row of spheres is labelled as A then the next row will be B, third row will again
be A, fourth row B and so on. Hence this planar or two dimensional close packing is
called ABAB... type packing.
In this arrangement, each sphere is in contact with six other spheres around it hence
the coordination number of each sphere is six and the packing iscalled two
dimensional or planar hexagonal close packing. In this, the packing efficiency is
60.4% which is more than linear close packing.
In this, packing efficiency is 74%. The coordination number of each sphere is 12.
The metals Be, Mg, Zn, Cd crystallise in HCP crystalline structure.
(ii) Cubic close packing (ccp) : If the crests of spheres of third layer are placed in
the positions of tetrahedral void ‘a’ having apex upward of first layers, then the third
layer will not be identical to the first, and may be labelled as C, which is different
from A and B layers. Fourth layer may be arranged above third layer such that the
spheres are aligned, so that the first layer and fourth layer are identical, second and
fifth layers are identical and so on.
If first, second and third layers are labelled as A, B and C respectively then the
arrangement of packing will be ABCABC type. This is also called cubic close packing
(ccp) as shown in the figure. This is similar to face centred cubic (fcc) packing.
In this, arrangement packing efficiency is 74 % and the coordination number of each
sphere is 12.
Tetrahedral void: All triangular voids of the first layers are not covered by the
spheres of the second layer. The triangular voids that are covered by spheres of the
second layer generate tetrahedral void.
The vacant space or void among four constituent particles having tetrahedral
arrangement in the crystal lattice is called tetrahedral void.
The arrangement of four spheres around the void is tetrahedral. A tetrahedral void is
formed when a triangular void made by three coplanar spheres is in contact with
fourth sphere above or below it.
Characteristics of tetrahedral void :
• The volume of the void is much smaller than that of atom or sphere.
• Larger the size of sphere, more is the size of void.
• If R is the radius of the constituent atom, then the radius of the tetrahedral
void is 0.225 R.
• Coordination number of tetrahedral void is four.
• There are two tetrahedral voids per sphere, in the crystal lattice. If the number
of closed packed spheres is N then the number of tetrahedral voids is 2N.
Octahedral void : The overlapping
triangular voids from the two layers
together form an octahedral void which is
surrounded by six spheres.
The vacant space or void at the centre of six spheres (or atoms) which are placed
octahedrally is called octahedral void.
Characteristics of octahedral void :
• The volume of the void is small.
• There is one octahedral void at the body centre and twelve octahedral void
positions at twelve edge centres.
• If R is the radius of constituent atom, then the radius of the octahedral void is
0.414 R.
• The coordination number of octahedral void is six.
• There is one octahedral void per sphere in the crystal lattice. If the number of
closed packed spheres is N then the number of octahedral voids is N.
Number of voids per atom in hcp and ccp : The tetrahedral and octahedral voids
occur in hcp and ccp/fcc structures. There are two tetrahedral voids associated with
each atom. The number of octahedral voids is half that of tetrahedral voids.
Thus, there is one octahedral void per atom.
• If N denotes number of particles, then number of tetrahedral voids is 2N and
that of octahedral voids is N.
Remember :
It is important to note that the triangular shapes of depressions in A and B layer do
not overlap. The apices of two triangular depressions in A and B layer point in
opposite directions.
The depressions in which spheres of second layer rest are tetrahedral voids while
the depressions in which no sphere rests are octahedral voids.
Figure shows that the particle at the centre of the cube touches two corner particles
along the diagonal of the cube.
To obtain radius of the particle (sphere) Pythagorus theorem is applied.
• For triangle FED, ∠ FED = 900.
∴ FD2 = FE2 + ED2 = a2 +a2 = 2a2 (because FE = ED = a) …….(1)
• For triangle AFD, ∠ ADF = 900
∴ AF2 = AD2 + FD2 ........... (2)
Substitution of Eq. (1) into Eq. (2) yields
AF2 = a2 + 2a2 = 3a2 (because AD = a)
∴ AF = √3 𝑎 ………(3)
The Fig. shows that AF = 4r.
Substitution for AF from equation (3) gives
∴ √3 𝑎 = 4r
√3
∴ r= 𝑎 ….. (4)
4
4 3
Step 2 : Volume of sphere : Volume of sphere particle = 𝑟 .
3
Substitution for r from Eq. (4),
3
4 √3 √3𝜋𝑎3
∴ Volume of one particle = ( 𝑎) = .
3 4 16
Step 3 : Total volume of particles : Unit cell bcc contains 2 particles. Hence,
√3𝜋𝑎3
volume occupied by particles in bcc unit cell = 2 ×
16
√3𝜋𝑎3
=
8
Step 4 : Packing efficiency
𝑣𝑜𝑙𝑢𝑚𝑒 𝑜𝑐𝑐𝑢𝑝𝑖𝑒𝑑 𝑏𝑦 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠 𝑖𝑛 𝑢𝑛𝑖𝑡 𝑐𝑒𝑙𝑙
Packing efficiency = × 100
𝑡𝑜𝑡𝑎𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑜𝑓 𝑢𝑛𝑖𝑡 𝑐𝑒𝑙𝑙
√2 a = 4r
√2 𝑎
∴r= 𝑎= ….(2)
4 2√2
4 3
Step 2 : Volume of sphere : Volume of one particle = 𝑟
3
Substitution for r from Eq. (2)
4 3 4 𝑎3 1 3
𝑎
∴ Volume of one particle = ×( ) = ×( )
3 2√2 3 2√2
𝑎3
=
12√2
Step 3 : Total volume of particles : The unit cell of fcc lattice contains 4 particles.
Hence, volume occupied by particles in fcc unit cell
𝑎3
=4×
12√2
𝑎3
=
3√2
Step 4 : Packing efficiency :
𝑣𝑜𝑙𝑢𝑚𝑒 𝑜𝑐𝑐𝑢𝑝𝑖𝑒𝑑 𝑏𝑦 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠 𝑖𝑛 𝑢𝑛𝑖𝑡 𝑐𝑒𝑙𝑙
Packing efficiency = × 100
𝑡𝑜𝑡𝑎𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑜𝑓 𝑢𝑛𝑖𝑡 𝑐𝑒𝑙𝑙
3.142
𝜋𝑎3/3√2 × 100 = × 100 == 74 %
=
𝑎3 3√2
Thus in fcc/ccp/hcp crystal lattice, 74% of the total volume is occupied by particles
∴ Percentage of void space = 100 - 74 = 26 %
Q. Which of the three types of packing used by metals makes the most
efficient use of space and which makes the least efficient use ?
Ans. fcc has the most efficient packing of particles awhile scc has the least eflicient
packing.
If the unit cell of the crystal has edge length ‘a’ then, volume of unit cell = a3.
𝑚𝑎𝑠𝑠 𝑛𝑢𝑚𝑏𝑒𝑟 𝑜𝑓 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠 𝑖𝑛 𝑢𝑛𝑖𝑡 𝑐𝑒𝑙 𝑀
ρ= = ×
𝑣𝑜𝑙𝑢𝑚𝑒 𝑣𝑜𝑙𝑢𝑚𝑒 𝑜𝑓 𝑢𝑛𝑖𝑡 𝑐𝑒𝑙𝑙 𝑁𝐴
𝑛 𝑀
∴ρ = 3 ×
𝑎 𝑁𝐴
𝜌 𝑎3𝑁𝐴
∴M =
𝑛
where 'n' is the number of particles in unit cell and 'a3' is the volume of unit cell.
i. Number of particles in 'x' g metal :
∴ Molar mass, M, contains NA particles
𝑥𝑁𝐴
∴ x g of metal contains particles
𝑀
substitution of M gives
𝑥𝑁𝐴 𝑥𝑛
Number of particles in 'x' g = =
𝜌𝑎3𝑁𝐴/𝑛 𝜌𝑎3
There are three types of defects: point defects, line defects and plain defects. Only
point defects will be discussed in this chapter.
Point defects : These defects arise due to irregularities produced in the
arrangement of basis of lattice points in crystalline solids.
There are three major classes of point defects :
• stoichiometric point defects,
• impurity defects
• non-stoichiometric point defects.
a. Stoichiometric point defects : Chemical formula of a compound shows fixed
ratio of number of atoms or number of cations and anions. This fixed ratio is the
stoichiometry of the compound.
In stoichiometric defect, the stoichiometry remains unchanged. In other words, the
ratio of number of atoms or number of cations and anions of compound remains the
same as represented by its chemical formula.
There are four types of stoichiometric point defects as
• vacancy defect,
• self interstitial defect,
• Schottky defect
• Frenkel defect.
Vacancy defect :
• During crystallisation, some of regular sites in solid remain unoccupied and the
missing particle creates a vacancy defect.
• The defect can be developed by heating the substance.
• The mass of solid decreases due to absence of particles in regular sites.
• Since the volume remains the same the density of the substance decreases.
Self Interstitial defect in elemental solid :
The empty spaces or voids in between the particles at lattice points represent
interstitial defective sites or self interstitial defects.
This defect arises in the following two ways :
(1) An extra particle occupies the empty interstitial space. This extra particle is
similar to those already present in the crystal.
(2) A particle gets shifted from its original regular site to an empty interstitial space
in the crystal.
Frenkel defect : This defect arises when an ion of an ionic compound is missing
from its regular site and occupies interstitial vacant position between lattice points.
• Cations have smaller size than anions, hence generally cations occupy the
interstitial sites.
• This creates a vacancy defect at its original position and interstitial defect at
new position.
• Frenkel defect is regarded as the combination of interstitial defect and vacancy
defect.
Conditions for the formation of Frenkel defect :
• This defect arises in ionic compounds with a large difference between the sizes
of cation and anion.
• The ionic compounds must have ions with low coordination number.
Consequences of Frenkel defect :
• As no ions are missing from the crystal lattice as a whole, the density of solid
and its chemical properties remain unchanged.
• The crystal as a whole remains electrically neutral because the equal numbers
of cations and anions are present.
• This defect is found in ionic crystals like ZnS, AgCl, AgBr, AgI, CaF2.
Impurity defect : This defect arises when foreign atoms, that is, atoms different
from the host atoms are present in the crystal lattice.
There are two types of impurity defects namely
(1) Substitutional defects and (2) Interstitial defects.
i. Substitutional impurity defect : In this defect, the foreign atoms are found at
the lattice sites in place of host atoms. The regular atoms are displaced from their
lattice sites by impurity atoms.
For example : Solid solutions of metals (alloys) : Brass is an alloy of Cu and Zn. In
brass, host Cu atoms are replaced by impurity of Zn atoms. The Zn atoms occupy
regular sites of Cu atoms as shown in Fig.
When aliovalent ion like Sr2+ in small amount is added by adding SrCl2 to NaCl during
its crystallisation, each Sr2+ ion (oxidation state 2 +) removes 2 Na+ ions from their
lattice points, to maintain electrical neutrality. Hence one of vacant lattice site is
occupied by Sr2+ ion while other site remains vacant.
ii. Interstitial impurity defect :
A defect in solid in which the impurity atoms occupy interstitial vacant spaces of
lattice structure is called interstitial impurity defect.
For example, in steel, normal lattice sites are occupied by Fe atoms but interstitial
spaces are occupied by carbon atoms. .
Nonstoichiometric defects :
Nonstoichiometric defect arises when the ratio of number of atoms of one kind to
that of other kind or the ratio of number of cations to anions becomes different from
that indicated by its chemical formula. i.e. stoichiometry of the compound is
changed.
• The change in stoichiometry does not cause any change in the crystal
structure.
• There are two types of nonstoichiometric defects
i. Metal deficiency defect : This defect arises in compounds of metal which show
variable oxidation states. In some metal crystals, positive metal ions are missing
from their regular lattice sites.
The extra negative charge is balanced by cations of the same metal with higher
oxidation state than that of missing cation at site.
For example, in the compound NiOone Ni2+ ion is missing creating a vacnacy at its
lattice site. The deficiency of two positive charges is made up by the presence of two
Ni3+ ions at the other lattice sites of Ni2+ ions as shown in Fig. The composition of NiO
then becomes Ni0.97O1.0
ii. Metal excess defect : There are two types of metal excess defect as follows :
(a) Presence of a neutral atom or an extra positive ion at interstitial position :
There are two types or ways of metal excess defects in ZnO. In the first case, Zn
atom is present in the interstitial space as shown in figure.
(b) Metal ions and electrons at interstitial sites :
The second case arises when ZnO is heated,
Zn2+ and electrons are obtained,
ZnO → Zn2+ + ½O2 + 2e−
• Due to diffusion of Cl− ions to the crystal surface vacancies are created at their
regular sites.
• These diffused Cl− ions combine with Na atoms on the surface forming NaCl
along with releasing electrons from sodium atoms.
• Na + Cl− → NaCl + e−
• The released electrons diffuse into the crystal and occupy vacant sites of
anions Cl− in the crystal.
• The anion vacant sites occupied by electrons are called F-centres or colour
centres. Due to colour centres NaCl shows yellow colour.
• Now NaCl crystal has excess of Na atoms having nonstoichiometric formula
Na1+xCl1.0
Q. When ZnO is heated it turns yellow and returns back to original white
colour on cooling. What could be the reason ?
Ans.
• When colourless ZnO is strongly heated, the metal atoms are deposited on
crystal surface and anions O2− migrate to the surface producing vacancies at
anion lattice points.
• These anions combine with Zn atoms forming ZnO and release electrons.
• Zn + O2− —> ZnO + 2e−
• These released electrons diffuse into the crystal and occupy vacant sites of
anions and produce F-centres.
• Due to these colour centres, ZnO turns yellow.
Metals :
• Metals are good conductors of electricity since the outermost electrons of all
the atoms in the metallic crystal occupy conduction band.
• The number of electrons in conduction bands is very large.
• The conduction bands in metals can be labelled as ‘s’ band, overlapping s and
p bands etc. according to overlapping of orbitals.
• This results in delocalisation of outermost electrons forming metal ions. Hence,
this is analogous to metal cations immersed in the sea of electrons.
Q. Why does metallic conductivity decrease by increasing temperature ?
Ans.
• In metals a large number of outermost electrons of atoms occupy conduction
bands.
• Band formation in metals results in delocalisation of outennost electrons
forming metal ions or cations.
• The metallic cations occupying crystal lattice sites vibrate about mean
positions.
• As temperature increases the vibrational motion increases which interrupts
flow of electrons decreasing electrical conductivity.
Insulators : In insulators the valence band is completely filled by electronics while
conduction band is empty.
conduction band.
• Therefore, the conduction band in insulator remains vacant and does not allow
the conduction of electricity.
Semiconductors : Electrical conductivity of a semiconductor material is
intermediate between that of metals and insulators.
• The substances like silicon, germanium which have poor electrical conductance
at low temperature but the conductance increases with the increase in
temperature are called semi-conductors.
• The energy difference between valence band and conduction band is relatively
small, hence the electrons from valence band can be excited to conduction
band by heating.
Types of semiconductors : There are two types of semiconductors :
• Intrinsic semiconductor
• Extrinsic semiconductor
(a) Intrinsic semiconductor :
• A pure semiconductor material like pure Si, Ge which have a very low but finite
electrical conductivity is called intrinsic semiconductor.
• The electrical conductivity of a semiconductor increases with the increase in
temperature.
(b) Extrinsic semiconductor :
• Semiconductor doped with different element is called extrinsic semiconductor.
• By doping with elements like Ga or P, the electrical conductivity is increased.
Remember...
Electrical conductivity of metals decreases and that of semiconductor increases
with increasing temperature.
• P has five valence electrons, out of which four are involved in covalent bonding
with neighbouring Si atoms while one electrons remains free and delocalised.
• These free electrons increase the electrical conductivity of the semiconductor.
• The semiconductors with extra non-bonding free electrons are called n-type
semiconductors.
(B) p-type semiconductor :
• p-type semiconductor is obtained by doping a pure semiconductor by an
element of 13th group like B.
• 13th group element has less number of valence electrons. When pure Si is
doped with B atoms, these atoms occupy Si lattice points.
• Boron (SB) has only 3 valence electrons which form covalent bonds with the
neighbouring Si atoms, while one bond has shortage of one electron.
• This creates a vacancy or a hole, hence the electron from neighbouring Si
atom jumps into this hole creating a vacancy in itself. This process continues,
i.e., positive holes move in one direction while electrons moves inopposite
direction.
• Due to electron deficient positions, this semiconductor is called p-type
semiconductor.
• When p-type semiconductor is connected to the external source of electricity,
electrons from neighbouring silicon atoms jump into the holes so that electrons
move towards positive electrode and holes migrate towards negative electrode.
• Hence electrical conduction in p-type semiconductor is due to electrons and
holes.
Remember :
• Whether intrinsic or extrinsic semiconductor, the material is electrically neutral.
• An n-type semiconductor such as Si doped with P has more electrons than those
needed for bonding and thus has electrons in the partially filled conduction band.
• A p-type semiconductor such as Si doped with B has the less electrons than
needed for bonding and thus has vacancies (holes) in the valence band.
Activity : If a small quantity of phosphorus be doped into pure silicon.
• Total number of electrons in doped silicon will be more than in original
silicon.
• Material will be electrically neutral.
Uses of semiconductors :
• They are used in transistors, digital computers and cameras.
• They are used in solar cells and television sets.
• By combining n-type and p-type semiconductors, n-p junctions are formed
which are effectively used in rectifiers or to convert light energy into electrical
energy.
Magnetic properties of solids : Magnetic properties of solids can be understood
easily in terms of classical picture of electron.
• The electrons spin about their own axis. The spinning electrons act like tiny
magnets because their spinning action generates induced magnetic field.
• If an orbital contains one electron, the unbalanced spin exhibits magnetism.
• However, when electrons are paired their spin is balanced and no magnetic
property is observed.
On the basis of magnetic properties solids are classified into three major classes :
diamagnetic, paramagnetic and ferromagnetic.
Diamagnetism :
The magnetic properties of a substance arise due to presence of the electrons.
An electron while revolving around the nucleus, also spins around its own axis and
generates a magnetic moment and a magnetic property.
• If an atom or a molecule of the substance contains all electrons paired,
spinning clockwise and anticlockwise, their magnetic moments and magnetic
properties get cancelled. Hence they oppose and repel the applied magnetic
field. This phenomenon is called diamagnetism and the substance is said to be
diamagnetic.
• N2, F2, NaCl, H2O and benzene are some examples of diamagnetic substances.
Paramagnetism: (Paramagnetic substances) :
The magnetic properties of a substance arise due to the presence of electrons.
An electron while revolving around the nucleus, also spins around its own axis and
generates a magnetic moment and magnetic properties.
• If an atom or a molecule contains one or more unpaired electrons spinning in
same direction, clockwise or anticlockwise, then the substance is associated
with net magnetic moment and magnetic properties. They experience a net
force of attraction when placed in the magnetic field. This phenomenon is
called paramagnetism and the substance is said to be paramagnetic.
• For example : Oxygen, Cu2+, Fe3+, Cr3+ are some examples of paramagnetic
substances.
Ferromagnetism :
• The substances containing large number of unpaired electrons are attracted
strongly by magnetic field. These substances are said to be ferromagnetic.
• These substances can be permanently magnetised. They retain magnetism
even after the removal of external magnetic field.
• In the solid state, the metal ions of ferromagnetic substance are grouped
together into small regions called domains, where each domain acts as a tiny
magnet.
• Some example of ferromagnetic substances are Fe, Co, Ni, Gd, CrO2