T1G6000528-Q3

7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Applications Available Package

• Wideband and narrowband defense and
commercial communication systems
– General Purpose RF Power
– Jammers
– Radar
– Professional radio systems
– WiMAX
– Wideband ampliiers
– Test instrumentation
– Cellular infrastructure

Product Features Package Information

• Frequency: DC to 6 GHz Package Type Description Base
• Linear Gain: >10 dB at 6 GHz Q3 5.0mm x 4.0mm ceramic air CuMo
cavity straight lead package
• Operating Voltage: 28 V
• Output Power (P3dB): >7 W at 6 GHz
• Lead-free and RoHS compliant
• Low thermal resistance package

General Description Ordering Information

The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete Material No. Part No. Description ECCN
GaN on SiC HEMT which operates from DC to 6 GHz 1075579 T1G6000528-Q3 Packaged part EAR99
and typically provides >10 dB gain at 6 GHz. The 1081733 T1G6000528-Q3- Narrowband EAR99
device is constructed with TriQuint’s proven 0.25 EVB3 3.0 to 3.5 GHz
evaluation
µm production process, which features advanced
board
ield plate techniques to optimize power and ei-
ciency at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer ampliier line-ups and lower thermal
management costs.

Released Datasheet: Rev. K 8/11/2011 –1– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Speciications
Absolute Maximum Ratings1
Sym Parameter Value
V+ Positive Supply Value2 28
V -
Negative Supply Voltage Range - 10 V to 0 V
I Positive Supply Current2 0.8 A
|IG| Gate Supply Current 12.5 mA
PD Power Dissipation2 10 W
TCH Operating Channel Temperature2 200°C

Notes:
1
Absolute maximum ratings at 3 GHz
2
Absolute maximum ratings are set based on industry recommended
standard mean time to failure (MTTF) greater than 1M hours while
operating at a maximum case temperature of 85C . Operating at lower
maximum case temperatures allows maximum operating voltage to
be increased up to a maximum of 40V. Application speciic limits can
be determined with engineering guidance from TriQuint.

Median Lifetime (Tm) vs. Channel Temperature (Tch)

1.E+15

1.E+14
i Lifetime, Tm (Hours)

1.E+13

1.E+12

1.E+11

1.E+10

1.E+09

1.E+08
Median

1.E+07

1.E+06

1.E+05
FET7
1.E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, Tch (°C)

Released Datasheet: Rev. K 8/11/2011 –2– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Speciications
Thermal Information
Test Conditions TCH (°C) JC
(°C/W)1
DC at 85°C Case 199 11.2

Notes:
1
Thermal resistance (channel to backside of case)

T1G6000528-Q3 Max Channel Temperature vs Pulse Width

(Tbase = 85° C, Pdiss = 3 W/mm)
180

160
Maximum Channel Temperature (degC)

140

120

100

80

60

40 5% duty cycle
25% duty cycle
20 50% duty cycle

0
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00

Pulse
PulseWidth
Width(sec)
(sec)

Released Datasheet: Rev. K 8/11/2011 –3– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Electrical Speciications
Recommended operating conditions apply unless otherwise speciied: TA=25 °C

DC Characteristics
Characteristics Symbol Min Typ Max Unit Conditions
Break-Down Voltage Drain Source BVDSX 85 120 V VGS= -8 V; ID=1 mA
Gate Quiescent Voltage VGS (Q) -3.9 V VDS=28 V; IDQ=100 mA
Gate Threshold Voltage VGS (th) -4.5 V VDS=10 V; ID=5 mA
Saturated Drain Current IDSX 2 A VDS=5 V; VGS=0 V

RF Characteristics
Characteristics Symbol Min Typ Max Unit
Load Pull Performance at 6.0 GHz (VDS = 28 V, IDQ = 50 mA, CW)
Linear Gain GLIN 13.0 13.5 dB
Output Power at 3 dB Gain Compression P3dB 8.0 10.0 W
Drain Eiciency at 3 dB Gain Compression DE3dB 55 65 %
Power-Added Eiciency at 3 dB Gain Compression PAE3dB 50 55 %
Gain at 3 dB Compression G3dB 10.0 10.5 dB
Performance at 3.3 GHz in the 3.0 to 3.5 GHz Fixture (VDS = 28 V, IDQ = 50 mA, 200msec pulse, 20% duty-cycle)
Linear Gain GLIN 15.5 16.9 dB
Output Power at 3 dB Gain Compression P3dB 8.9 11.0 W
Drain Eiciency at 3 dB Gain Compression DE3dB 55 58 %
Power-Added Eiciency at 3 dB Gain Compression PAE3dB 50 53 %
Gain at 3 dB Compression G3dB 12.5 13.9 dB
Narrowband Performance at 3.5 GHz (VDS = 28 V, IDQ = 50 mA, CW at P1dB, applied for 3.5 secs)
Impedance Mismatch Ruggedness VSWR 10:1

Released Datasheet: Rev. K 8/11/2011 –4– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Device Characterization Data

S-Parameter Smith Chart
T1G6000528-Q3
VDS=28V, IDQ=50 mA
j10

j5 j20

j2 6000MHz
j50

0 2 5 10 20 50 ∞
100MHz
6000MHz
S22

−j2 −j50
S11

−j5 −j20

−j10

Small-Signal Gain
Maximum Stable Gain of T1G6000528-Q3
VDS=28V, IDQ=50 mA
Gmax vs. Frequency
35
Max Stable Gain

30

25

20
Gain (dB)

15

10

0
0 1000 2000 3000 4000 5000 6000
Frequency (MHz)

The data was taken in a package ixture. The reference planes are at the package interface.

Released Datasheet: Rev. K 8/11/2011 –5– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

S-Parameter Data (VDS = 28 V, IDQ = 50 mA)

Freq. [GHz] Real S11 Imag S11 Real S21 Imag S21 Real S12 Imag S12 Real S22 Imag S22
0.1 0.892 -0.182 -14.955 4.241 0.005 0.005 0.440 -0.285
0.2 0.726 -0.593 -12.756 7.176 0.008 0.011 0.361 -0.316
0.3 0.438 -0.840 -10.636 9.084 0.012 0.015 0.294 -0.342
0.4 0.127 -0.926 -8.639 10.186 0.016 0.017 0.236 -0.362
0.5 -0.058 -0.910 -6.798 10.673 0.020 0.018 0.187 -0.379
0.6 -0.178 -0.894 -5.134 10.700 0.024 0.017 0.144 -0.391
0.7 -0.276 -0.856 -3.659 10.398 0.028 0.015 0.106 -0.401
0.8 -0.349 -0.817 -2.377 9.874 0.031 0.013 0.072 -0.409
0.9 -0.444 -0.777 -1.287 9.214 0.034 0.011 0.040 -0.415
1.0 -0.521 -0.726 -0.381 8.485 0.036 0.008 0.008 -0.422
1.1 -0.589 -0.669 0.353 7.737 0.037 0.006 -0.025 -0.428
1.2 -0.637 -0.608 0.929 7.010 0.038 0.004 -0.059 -0.435
1.3 -0.681 -0.558 1.365 6.329 0.038 0.002 -0.091 -0.441
1.4 -0.719 -0.501 1.677 5.712 0.037 0.000 -0.122 -0.447
1.5 -0.747 -0.452 1.886 5.168 0.037 -0.001 -0.149 -0.451
1.6 -0.769 -0.411 2.009 4.701 0.035 -0.002 -0.173 -0.454
1.7 -0.786 -0.375 2.066 4.309 0.034 -0.003 -0.194 -0.455
1.8 -0.799 -0.344 2.074 3.986 0.033 -0.004 -0.213 -0.454
1.9 -0.810 -0.315 2.049 3.724 0.031 -0.005 -0.231 -0.451
2.0 -0.818 -0.289 2.006 3.515 0.030 -0.005 -0.249 -0.446
2.1 -0.826 -0.263 1.958 3.348 0.028 -0.005 -0.268 -0.439
2.2 -0.833 -0.238 1.915 3.213 0.027 -0.006 -0.287 -0.431
2.3 -0.839 -0.214 1.886 3.099 0.026 -0.006 -0.306 -0.422
2.4 -0.844 -0.190 1.878 2.997 0.026 -0.006 -0.323 -0.412
2.5 -0.849 -0.166 1.895 2.899 0.025 -0.007 -0.339 -0.402
2.6 -0.853 -0.143 1.940 2.798 0.025 -0.007 -0.352 -0.393
2.7 -0.856 -0.119 2.012 2.689 0.025 -0.007 -0.363 -0.384
2.8 -0.858 -0.094 2.110 2.568 0.025 -0.007 -0.372 -0.377
2.9 -0.859 -0.067 2.231 2.432 0.026 -0.008 -0.380 -0.370
3.0 -0.858 -0.038 2.370 2.282 0.026 -0.008 -0.389 -0.364
3.1 -0.857 -0.006 2.522 2.118 0.027 -0.008 -0.397 -0.359
3.2 -0.854 0.028 2.678 1.941 0.028 -0.009 -0.406 -0.354
3.3 -0.850 0.063 2.832 1.755 0.029 -0.009 -0.414 -0.349
3.4 -0.845 0.098 2.974 1.564 0.030 -0.009 -0.424 -0.344
3.5 -0.839 0.132 3.097 1.371 0.030 -0.009 -0.433 -0.339
3.6 -0.833 0.165 3.193 1.182 0.031 -0.009 -0.443 -0.332
3.7 -0.825 0.196 3.252 1.002 0.031 -0.009 -0.453 -0.324
3.8 -0.817 0.226 3.268 0.835 0.031 -0.008 -0.463 -0.315
3.9 -0.809 0.253 3.234 0.685 0.030 -0.008 -0.472 -0.303
4.0 -0.800 0.278 3.145 0.555 0.029 -0.007 -0.481 -0.290
4.1 -0.790 0.300 2.998 0.449 0.028 -0.007 -0.490 -0.273
4.2 -0.780 0.321 2.798 0.370 0.026 -0.006 -0.498 -0.255
4.3 -0.770 0.341 2.800 0.349 0.023 -0.005 -0.506 -0.237
4.4 -0.759 0.360 2.798 0.363 0.020 -0.004 -0.513 -0.218
4.5 -0.746 0.379 2.789 0.430 0.016 -0.003 -0.520 -0.201
4.6 -0.733 0.400 2.759 0.590 0.012 -0.002 -0.527 -0.186
4.7 -0.720 0.421 2.652 0.962 0.008 -0.001 -0.534 -0.172
4.8 -0.706 0.443 2.054 1.934 0.003 0.000 -0.540 -0.160
4.9 -0.693 0.464 -0.806 2.704 -0.002 0.001 -0.547 -0.150
5.0 -0.681 0.486 -2.262 1.685 -0.007 0.002 -0.553 -0.139
5.1 -0.671 0.507 -2.554 1.198 -0.012 0.002 -0.559 -0.130
5.2 -0.657 0.528 -2.647 0.975 -0.018 0.003 -0.565 -0.120
5.3 -0.638 0.551 -2.687 0.860 -0.022 0.003 -0.571 -0.111
5.4 -0.609 0.576 -2.703 0.805 -0.027 0.003 -0.577 -0.101
5.5 -0.566 0.605 -2.705 0.798 -0.031 0.002 -0.582 -0.092
5.6 -0.512 0.634 -2.692 0.842 -0.033 0.002 -0.588 -0.082
5.7 -0.464 0.657 -2.653 0.957 -0.035 0.002 -0.593 -0.072
5.8 -0.389 0.687 -2.562 1.184 -0.036 0.003 -0.597 -0.061
5.9 -0.295 0.709 -2.203 1.485 -0.035 0.003 -0.601 -0.049
6.0 -0.168 0.688 -1.649 1.944 -0.032 0.005 -0.605 -0.037
The data was taken in a package ixture. The reference planes are at the package interface.

Released Datasheet: Rev. K 8/11/2011 –6– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Device Characterization Data

Load-Pull Data
Test conditions: VDD= 28 V, IDQ = 50 mA, Test signal = CW

j25

j12.5 j50

500 MHz
j5 j125

ZLeff

ZLcmp 500 MHz

0 5 12.5 25 500 MHz50 125 ∞

500 MHz

6000 MHz ZLpwr

6000 MHz 6000 MHz
−j5 −j125

ZS
6000 MHz
−j12.5 −j50

−j25

Released Datasheet: Rev. K 8/11/2011 –7– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Load-Pull Data
RF performance that the device typically exhibits when placed in the speciied impedance environment. The
impedances are not the impedances of the device, they are the impedances presented to the device via an RF
circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and
high eiciency (ZLcmp). Test conditions: VDS=28V, IDQ= 50mA

Freq. [MHz] Real(ZS) Imag(ZS) Real(ZL) Imag(ZL) G3dB [dB] P3dB [dBm] P3dB [W] PAE @3dB[%]
500 5.00 86.68 26.11 1.23 17.8 38.8 7.6 54.0
600 5.00 80.16 25.94 1.34 17.9 38.9 7.7 54.4
700 5.00 72.72 25.77 1.47 17.9 38.9 7.8 54.8
800 5.00 65.74 25.62 1.59 18.0 39.0 7.9 55.2
900 5.00 59.41 25.46 1.73 18.0 39.0 8.0 55.6
1000 5.00 53.61 25.31 1.87 18.1 39.1 8.1 56.0
1100 5.00 48.21 25.16 2.01 18.1 39.3 8.6 57.4
1200 5.00 43.15 25.01 2.15 18.2 39.6 9.1 58.8
1300 5.00 38.42 24.86 2.29 18.2 39.8 9.6 60.2
1400 5.00 34.02 24.71 2.43 18.3 40.1 10.1 61.6
1500 5.00 29.98 24.55 2.57 18.3 40.3 10.7 63.0
1600 5.00 26.32 24.40 2.71 18.3 40.5 11.3 64.4
1700 5.00 23.05 24.23 2.84 18.4 40.8 12.0 65.8
1800 5.00 20.16 24.06 2.97 18.4 41.0 12.6 67.2
1900 5.00 17.62 23.89 3.09 18.5 41.3 13.4 68.6
2000 5.00 15.40 23.71 3.20 18.5 41.5 14.1 70.0
2100 5.00 13.46 23.52 3.31 18.2 41.5 14.0 68.6
2200 5.00 11.77 23.32 3.40 17.8 41.4 13.8 67.2
2300 5.00 10.29 23.11 3.49 17.5 41.4 13.6 65.8
2400 5.00 8.97 22.90 3.56 17.1 41.3 13.5 64.4
2500 5.00 7.78 22.67 3.62 16.8 41.3 13.3 63.0
2600 5.00 6.66 22.43 3.68 16.4 41.2 13.2 61.6
2700 5.00 5.60 22.18 3.73 16.1 41.2 13.0 60.2
2800 5.00 4.56 21.93 3.77 15.7 41.1 12.9 58.8
2900 5.00 3.55 21.66 3.81 15.4 41.1 12.7 57.4
3000 5.00 2.54 21.38 3.85 15.0 41.0 12.6 56.0
3100 5.00 1.55 21.09 3.88 14.9 41.0 12.5 56.6
3200 5.00 0.59 20.79 3.92 14.8 41.0 12.5 57.2
3300 5.00 -0.33 20.48 3.97 14.8 40.9 12.4 57.8
3400 5.00 -1.20 20.16 4.01 14.7 40.9 12.4 58.4
3500 5.00 -2.03 19.84 4.04 14.6 40.9 12.3 59.0
3600 5.00 -2.80 19.52 4.06 14.5 40.9 12.2 59.6
3700 5.00 -3.53 19.20 4.05 14.4 40.9 12.2 60.2
3800 5.00 -4.23 18.89 4.00 14.4 40.8 12.1 60.8
3900 5.00 -4.89 18.60 3.93 14.3 40.8 12.1 61.4
4000 5.00 -5.52 18.32 3.80 14.2 40.8 12.0 62.0
4100 5.00 -6.14 18.06 3.63 14.0 40.8 11.9 62.0
4200 5.00 -6.74 17.82 3.40 13.9 40.7 11.8 62.0
4300 5.00 -7.33 17.60 3.11 13.7 40.7 11.7 62.0
4400 5.00 -7.93 17.40 2.77 13.6 40.6 11.6 62.0
4500 5.00 -8.52 17.23 2.38 13.4 40.6 11.5 62.0
4600 5.00 -9.11 17.07 1.95 13.2 40.6 11.4 62.0
4700 5.00 -9.73 16.93 1.48 13.1 40.5 11.3 62.0
4800 5.00 -10.36 16.82 0.97 12.9 40.5 11.2 62.0
4900 5.00 -11.03 16.71 0.43 12.8 40.4 11.1 62.0
5000 5.00 -11.75 16.63 -0.14 12.6 40.4 11.0 62.0
5100 5.00 -12.54 16.57 -0.73 12.5 40.4 11.0 61.7
5200 5.00 -13.41 16.52 -1.36 12.4 40.4 11.0 61.4
5300 5.00 -14.39 16.49 -2.00 12.3 40.4 11.0 61.1
5400 5.00 -15.52 16.48 -2.67 12.2 40.4 11.0 60.8
5500 5.00 -16.84 16.50 -3.36 12.1 40.4 11.0 60.5
5600 5.00 -18.43 16.53 -4.08 11.9 40.4 11.0 60.2
5700 5.00 -20.37 16.59 -4.82 11.8 40.4 11.0 59.9
5800 5.00 -22.78 16.68 -5.58 11.7 40.4 11.0 59.6
5900 5.00 -25.88 16.80 -6.37 11.6 40.4 11.0 59.3
6000 5.00 -29.97 16.95 -7.19 11.5 40.4 11.0 59.0

Released Datasheet: Rev. K 8/11/2011 –8– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Typical Performance: Gain, Eiciency and Output Power

Performance is measured at DUT reference plane

Gain DEf., and PAE vs. Pout

Gain, DEff., and PAE vs. Pout
Gain DEf., and PAE vs. Pout
Gain, DEff., and PAE vs. Pout
Freq. =Freq
3GHz; VDS
= 3GHz; ==28V,
Vds IDQ= =50mA;
28V, Idq 50 mA;
CW CW Freq. Freq
= 4GHz; VVds
= 4GHz; = 28V, I = 50mA;
DS = 28V, IdqDQ
= 50 CW
mA; CW
20 80 20 80
ZS = 2.72 + j0.10 Ω
19 ZL = 23.14 + j0.58 Ω 70 19 ZS = 2.16 − j6.47 Ω 70
ZL = 18.02 + j6.49 Ω
18 60 18 60

DEff. & PAE [%]

DEff. & PAE [%]
17 50 17 50

Gain [dB]
Gain [dB]

16 40 16 40

15 30 15 30

Gain Gain
14 20 14 20
DEff. DEff.
PAE PAE
13 10 13 10

12 0 12 0
26 28 30 32 34 36 38 40 42 26 28 30 32 34 36 38 40 42
Pout [dBm] Pout [dBm]

Gain DEf., and PAE vs. Pout

Gain, DEff., and PAE vs. Pout
Gain DEf., and PAE vs. Pout
Gain, DEff., and PAE vs. Pout
Freq. =Freq
5GHz; VDS
= 5GHz; ==28V,
Vds IDQ= =50mA;
28V, Idq 50 mA;
CW CW Freq. Freq
= 6GHz; VVds
= 6GHz; = 28V, I = 50mA;
DS = 28V, IdqDQ
= 50 CW
mA; CW
18 80 16 80
ZS = 2.77 − j11.01 Ω
17 ZL = 13.85 + j1.40 Ω 70 15 70

16 60 14 60
ZS = 12.99 − j30.90 Ω
ZL = 18.88 − j8.87 Ω
DEff. & PAE [%]

DEff. & PAE [%]

15 50 13 50
Gain [dB]

Gain [dB]

14 40 12 40

13 30 11 30
Gain Gain
12 20 10 20
DEff. DEff.
PAE PAE
11 10 9 10

10 0 8 0
26 28 30 32 34 36 38 40 42 26 28 30 32 34 36 38 40 42
Pout [dBm] Pout [dBm]

Released Datasheet: Rev. K 8/11/2011 –9– Disclaimer: Subject to change without notice
Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Performance Over Temperature: Gain, Eiciency and Output Power

Gain vs. Temperature Drain Eiciency vs. Temperature

3300 MHz,
Gain 28V, 503300
vs. Temperature, mA;
MHz,CW
28 V, P mA,Compression
503dB CW P3dB Compression 3300 MHz, 28V, 50 mA; CW P Compression
Drain Efficiency vs. Temperature, 3300 MHz, 28 V,
3dB50 mA, CW P3dB Compression
16 70

69

15.5
68

67
15

66

DrainEff. (%)
Gain (dB)

14.5 65

64

14
63

62
13.5

61

13 60
−40 −20 0 20 40 60 80 −40 −20 0 20 40 60 80
Temperature (C) Temperature (C)

Power vs. Temperature

3300vs.MHz,
Power 28V, 50
Temperature, 3300mA;
MHz, CW
28 V, P
503dB
mA,Compression
CW P3dB Compression

14

13.8

13.6

13.4

13.2
Power (W)

13

12.8

12.6

12.4

12.2

12
−40 −20 0 20 40 60 80
Temperature (C)

Released Datasheet: Rev. K 8/11/2011 – 10 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Evaluation Board Performance: 3.0 to 3.5 GHz

T1G6000528-Q3 P3dB Compression in Narrowband Fixture

T1G6000528−Q3 P3dB Compression in Narrow−Band Fixture
28V, 28V,
50mA; 200μsec
50mA, 200µsec–− 20% duty-cycle
20% duty−cycle pulse
pulse
70
Drain Eff. (%)
PAE (%)
68

66

64

62

60

58

56

54

52

50
3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500
Frequency (MHz)

T1G6000528-Q3 P3dB
T1G6000528−Q3 Compression
P3dB Compression in in Narrowband
Narrow−Band Fixture Fixture
28V, 28V,
50mA; 200µsec–−20%
200μsec
50mA, 20% duty−cycle
duty-cyclepulse
pulse
15
Power (W)
Gain (dB)
14.5

14

13.5

13

12.5

12

11.5

11

10.5

10
3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500
Frequency (MHz)

Released Datasheet: Rev. K 8/11/2011 – 11 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Evaluation Board Information

PC Board Layout: T1G6000528-Q3-EVB3, 3.0 to 3.5 GHz

Bill of Materials
Reference Reference
Desg. Value Manufacturer Part Number Desg. Value Manufacturer Part Number
C1 22 uF Sprague T491D C9 0.1 uF Kemet C1206C104KRAC7800
C2 1 uF Kemet 1812C105KAT2A C10 .01 uF Kemet C1206C103KRAC7800
C3 0.1 uG Kemet C1206C104KRAC7800 C11 100 pF ATC 100B101
C4 .01 uF Kemet C1206C103KRAC7800 C12 2400 pF DLI C08BL242X5UNX0B
C5 100 pF ATC 100B101 L2 9.85 nH Coilcraft 16069JLB
C6 2400 pF DLI C08BL242X5UNX0B C13 27 pF ATC 600L270JT200
R1 1000 ohm Vishay Dale CRCW08051001F100 C14 27 pF ATC 600L270JT200
R2 12 ohm Vishay Dale RM73B2B120J PCB RO3210 Rogers εr=10.2 h=25 mil
L1 9.85 nH Coilcraft 16069JLB IMN
distributed transmission
line input network
C7 22 uF Sprague T491D
distributed transmission
1812C105KAT2A OMN
C8 1 uF Kemet line output network

Released Datasheet: Rev. K 8/11/2011 – 12 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Evaluation Board Information (Continued)

PC Board Schematic: T1G6000528-Q3-EVB3, 3.0 to 3.5 GHz
GATE DRAIN

C1 C2 C3 C9
C8 C7
C4 C10

C5 C11

C6 C12

R1

R2

L1 L2
FET1
"T1G6000528_Q3"
50 Ohm 3
D 3
50 Ohm
1 2 1 G D 2 1 2

G S3

SMA_1 C13 "IMN" S "OMN" C14 SMA_2

Bias-up Procedure Bias-down Procedure

Set gate voltage (Vg) to -5.0 V Turn of RF signal
Set drain voltage (Vd) to 28 V Turn of Vd and wait 1 second to allow drain capacitor(s) to dissipate
Slowly increase Vg until quiescent Id is 50 mA.
Turn of Vg
Typical Vg is -3.9 V
Apply RF signal

Released Datasheet: Rev. K 8/11/2011 – 13 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Mechanical Information
Package Information and Dimensions
This package is lead-free/ROHS-compliant.

Drain

Source
(lange)

Gate

Note:
Unless speciied otherwise,
dimensions are in millimeters

Released Datasheet: Rev. K 8/11/2011 – 14 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Product Compliance Information

ESD Information

Caution! ESD-Sensitive Device

ESD Rating: 1A
Value: Passes 250 V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114

MSL Rating
Level 3 at +260 °C convection relow.
The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020.

ECCN
U.S. Department of Commerce EAR99

Released Datasheet: Rev. K 8/11/2011 – 15 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Contact Information
For the latest speciications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the informa-
tion contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information
contained herein. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the
entire risk associated with such information is entirely with the user. All information contained herein is subject
to change without notice. Customers should obtain and verify the latest relevant information before placing
orders for TriQuint products. The information contained herein or any use of such information does not grant,
explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether
with regard to such information itself or anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.

Released Datasheet: Rev. K 8/11/2011 – 16 – Disclaimer: Subject to change without notice

Copyright © 2011 TriQuint Semiconductor, Inc. Connecting the digital World to the Global Network®