Green ZVNL110G

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID max  Low On-Resistance
BVDSS RDS(ON) max
TA = 25°C  Low Input Capacitance
3.0Ω @ VGS = 10V 0.6A  Fast Switching Speed
100V
4.5Ω @ VGS = 5.0V 0.5A  Low Input/Output Leakage

NEW PRODUCT

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Description  Halogen and Antimony Free. “Green” Device (Note 3)

This new generation MOSFET is designed to minimize the on-state

Mechanical Data
NEW PRODUCT

resistance (RDS(ON)) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.  Case: SOT223
 Case Material: Molded Plastic, “Green” Molding Compound.
Applications UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 DC-DC Converters
 Terminals Connections: See Diagram Below
 Power Management Functions
 Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.112 grams (Approximate)

SOT223 D

S
Top View Pin Out - Top View Equivalent Circuit

Ordering Information (Note 4)

Part Number Compliance Case Packaging
ZVNL110GTA Standard SOT223 1,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

ZVNL110 = Product Type Marking Code

YWW

ZVNL YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)
110 WW or WW = Week Code (01~53)

ZVNL110G 1 of 6 February 2015

Document number: DS33386 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 ZVNL110G

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±20 V
Steady TA = +25°C 0.6
Continuous Drain Current (Note 6) VGS = 10V ID A
State TA = +70°C 0.5
Pulsed Drain Current (10μs Pulse, Duty Cycle ≦ 1%)
NEW PRODUCT

IDM 6 A
Maximum Body Diode Continuous Current (Note 6) IS 1.5 A
NEW PRODUCT

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
(Note 5) 1.1
Total Power Dissipation PD W
(Note 6) 2.0
(Note 5) 113
Thermal Resistance, Junction to Ambient RθJA
(Note 6) 61 °C/W
Thermal Resistance, Junction to Case (Note 6) RθJC 6.6
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 100   V VGS = 0V, ID = 1mA
10 VDS = 100V, VGS = 0V
Zero Gate Voltage Drain Current IDSS   µA
100 VDS = 80V, VGS = 0V, TJ = +125°C
Gate-Body Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V
On-State Drain Current ID(ON) 750   mA VDS = 25V, VGS = 5V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 0.75  1.5 V VDS = VGS, ID = 1mA
  3.0 VGS = 10V, ID = 500mA
Static Drain-Source On-Resistance RDS(ON) Ω
  4.5 VGS = 5.0V, ID = 250mA
Forward Transconductance gfs 225   mS VDS = 25V, ID = 500mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss  47 75
Output Capacitance Coss  23 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss  6 8
Turn-On Delay Time tD(ON)  2 7
Turn-On Rise Time tR  3 12 VDD = 25V, VGS = 10V,
ns
Turn-Off Delay Time tD(OFF)  5 15 RG = 6.0Ω, ID = 1.0A
Turn-Off Fall Time tF  2 13
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

ZVNL110G 2 of 6 February 2015

Document number: DS33386 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 ZVNL110G

1.0 1
VGS = 10V T A = -55°C
VGS = 8.0V VDS = 5V
VGS = 5.0V
TA = 25°C

0.8 0.8

ID , DRAIN CURRENT (A)

T A = 85°C
ID, DRAIN CURRENT (A)

0.6 0.6 T A = 125°C

NEW PRODUCT

VGS = 4.0V T A = 150°C

0.4 0.4
NEW PRODUCT

VGS = 3.0V
0.2 0.2
VGS = 2.5V

VGS = 2.0V

0.0 0
0 1 2 3 4 5 0 2 4 6 8
V DS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics
5 6
RDS(ON ), DRAIN-SOURCE ON-RESISTANCE ()

RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )

4 5
VGS = 5V

3 4 ID = 500mA

VGS = 10V

2
3

I D = 250mA
1
2

0
0 0.4 0.8 1.2 1.6 2 1
ID, DRAIN-SOURCE CURRENT (A) 0 4 8 12 16 20
Figure 3 Typical On-Resistance vs. VGS, GATE-SOURCE VOLTAGE (V)
Drain Current and Gate Voltage Figure 4 Typical Transfer Characteristics
6 2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )

VGS = 10V

5 1.8
ON-RESISTANCE (NORMALIZED)
RD S(ON ), DRAIN-SOURCE

1.6
4 TA = 150°C
VGS = 10V
T A = 125°C
1.4 I D = 500mA
T A = 85°C
3 VGS = 5V
T A = 25°C 1.2 I D = 250mA

2
T A = -55°C
1
1
0.8

0
0 0.4 0.8 1.2 1.6 2 0.6
ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150
Figure 5 Typical On-Resistance vs. TJ, JUNCTION TEMPERATURE ( C)
Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature

ZVNL110G 3 of 6 February 2015

Document number: DS33386 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 ZVNL110G

5 1.6
RD S(on), DRAIN-SOURCE ON-RESISTANCE ( )

VGS(TH ), GATE THRESHOLD VOLTAGE (V)

4.5

VGS = 5V I D = 1mA
4 1.3
I D = 250mA

3.5
I D = 250µA
NEW PRODUCT

3 1

2.5 VGS = 10V

NEW PRODUCT

I D = 500mA
2 0.7

1.5

1 0.4
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( C) TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Temperature
2 1000
f = 1MHz
1.8 T A= 150°C

CT , JUNCTION CAPACITANCE (pF)

1.6
I S, SOURCE CURRENT (A)

1.4 T A= 125°C
100
1.2 Ciss

1 C oss

0.8 TA = 85°C

10
0.6 Crss

0.4 T A= 25°C

0.2
T A= -55°C
0 1
0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40
VSD , SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance
10
RDS(on)
Limited
PW = 100µs

1
ID, DRAIN CURRENT (A)

PW = 1ms

DC

0.1 PW = 10s

PW = 1s

PW = 100ms

TJ(m ax) = 150°C PW = 10ms

0.01
TA = 25°C
V GS = 10V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area

ZVNL110G 4 of 6 February 2015

Document number: DS33386 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 ZVNL110G

1
D = 0.9
D = 0.7
D = 0.5

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.3

0.1
D = 0.1
NEW PRODUCT

D = 0.05

D = 0.02
NEW PRODUCT

0.01 D = 0.01

D = 0.005

Single Pulse Rthja (t) = r(t) * Rthja

Rthja = 111°C/W
Duty Cycle, D = t1/ t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D
b1 Q
C
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
E E1
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
Gauge D 6.45 6.55 6.50
Plane E 3.45 3.55 3.50
0.25 E1 6.90 7.10 7.00
Seating
Plane
L e - - 4.60
e1 - - 2.30
e1 b 0° L 0.85 1.05 0.95
-1
e 0° Q 0.84 0.94 0.89
All Dimensions in mm
A A1 7°
7°

ZVNL110G 5 of 6 February 2015

Document number: DS33386 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 ZVNL110G

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1

Y1
NEW PRODUCT

Dimensions Value (in mm)

C 2.30
C1 6.40
X 1.20
C1 Y2
X1 3.30
NEW PRODUCT

Y 1.60
Y1 1.60
C2 8.00

X C

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2015, Diodes Incorporated

www.diodes.com

ZVNL110G 6 of 6 February 2015

Document number: DS33386 Rev. 4 - 2 www.diodes.com © Diodes Incorporated