ZXMP6A17GQ

Green
60V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID • Fast Switching Speed
V(BR)DSS RDS(on)
ADVANCE INFORMATION

TA = +25°C • Low Gate Drive

125mΩ @ VGS= -10V -4.3A • Low Input Capacitance
-60V
190mΩ @ VGS= -4.5V -3.5A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description
• PPAP Capable (Note 4)
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high- Mechanical Data
efficiency power management applications.
• Case: SOT223
• Case Material: Molded Plastic, UL Flammability Classification
Applications
Rating 94V-0
• Motor Control • Moisture Sensitivity: Level 1 per J-STD-020
• DC-DC Converters • Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
• Power Management Functions Solderable per MIL-STD-202, Method 208
• Uninterrupted Power Supply • Weight: 0.112 grams (Approximate)

SOT223
D

S
Top View Pin Out - Top View Equivalent Circuit

Ordering Information (Notes 4 & 5)

Part Number Compliance Case Packaging
ZXMP6A17GQTA Automotive SOT223 1,000 / Tape & Reel
Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

ZXMP6A17 = Product Type Marking Code

YWW = Date Code Marking
Y or Y= Year (ex: 5 = 2015)
WW or WW = Week (01 - 53)

ZXMP6A17GQ 1 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
ADVANCE INFORMATION

Drain-Source Voltage VDSS -60 V

Gate-Source Voltage VGS ±20 V
(Note 7) -4.3
Continuous Drain Current VGS = 10V TA = +70°C (Note 7) ID -3.5 A
(Note 6) -3
Pulsed Drain Current VGS = 10V (Note 8) IDM -13.7 A
Continuous Source Current (Body Diode) (Note 7) IS -4.8 A
Pulsed Source Current (Body Diode) (Note 8) ISM -13.7 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
2
(Note 6)
Power Dissipation 16 W
PD
Linear Derating Factor 3.9 mW/°C
(Note 7)
31
(Note 6) 62.5
Thermal Resistance, Junction to Ambient RθJA
(Note 7) 32 °C/W
Thermal Resistance, Junction to Lead (Note 9) RθJL 9.8
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t ≤ 10sec.
8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).

ZXMP6A17GQ 2 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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Thermal Characteristics
ADVANCE INFORMATION

RDS(on) 2.0

Max Power Dissipation (W)

10 25mm x 25mm
Limited
-ID Drain Current (A)

1oz FR4
1.6

1 1.2
DC
1s
100ms 0.8
100m 10ms
Single Pulse 1ms 0.4
100µs
T amb=25°C
10m 0.0
1 10 100 0 20 40 60 80 100 120 140 160
-VDS Drain-Source Voltage (V) Temperature (°C)
Safe Operating Area Derating Curve

70
Thermal Resistance (°C/W)

T amb=25°C Maximum Power (W) Single Pulse

60
T amb=25°C
50 100

40
D=0.5
30
10
20 D=0.2 Single Pulse
D=0.05
10
D=0.1
0 1
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
ADVANCE INFORMATION

Drain-Source Breakdown Voltage BVDSS -60   V ID = -250µA, VGS = 0V

Zero Gate Voltage Drain Current IDSS   -0.5 µA VDS = -60V, VGS = 0V
Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) -1   V ID = -250µA, VDS = VGS
0.096 0.125 VGS = -10V, ID = -2.2A
Static Drain-Source On-Resistance (Note 10) RDS(ON)  Ω
0.12 0.19 VGS = -4.5V, ID = -1.8A
Forward Transconductance (Notes 10 & 11) gfs  4.7  S VDS = -15V, ID = -2.2A
Diode Forward Voltage (Note 10) VSD  -0.85 -0.95 V IS = -2A, VGS = 0V, TJ = +25°C
Reverse Recovery Time (Note 11) trr 25.1  ns IS = -1.7A, di/dt = 100A/µs,
Reverse Recovery Charge (Note 11) Qrr  27.2  nC TJ = +25°C
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance Ciss  637  pF
VDS = -30V, VGS = 0V
Output Capacitance Coss  70  pF
f = 1MHz
Reverse Transfer Capacitance Crss  53  pF
Total Gate Charge (Note 12) Qg  9  nC VGS = -4.5V
Total Gate Charge (Note 12) Qg  17.7  nC VDS = -30V
Gate-Source Charge (Note 12) Qgs  1.6  nC VGS = -10V ID = -2.2A
Gate-Drain Charge (Note 12) Qgd  4.4  nC
Turn-On Delay Time (Note 12) tD(on)  2.6  ns
Turn-On Rise Time (Note 12) tr  3.4  ns VDD = -30V, VGS = -10V
Turn-Off Delay Time (Note 12) tD(off)  26.2  ns ID = -1A, RG ≅ 6Ω
Turn-Off Fall Time (Note 12) tf  11.3  ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.

ZXMP6A17GQ 4 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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Typical Characteristics
ADVANCE INFORMATION

T = 25°C 10V T = 150°C 10V 5V

5V
4V 4.5V
10 10
3.5V 3.5V
-ID Drain Current (A)

-ID Drain Current (A)

3V 3V
2.5V
1 2.5V 1
2V
-VGS
0.1 2V 0.1
-VGS
1.5V
0.01 0.01
0.1 1 10 0.1 1 10
-VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)
Output Characteristics Output Characteristics

1.8
Normalised RDS(on) and VGS(th) VGS = -10V
10
1.6 ID = - 2.3A
-ID Drain Current (A)

RDS(on)
1.4
T = 150°C
1
1.2

T = 25°C 1.0
VGS(th)
0.1 0.8 VGS = VDS
-VDS = 10V
ID = -250uA
0.6
1 2 3 4 -50 0 50 100 150
-VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)
Typical Transfer Characteristics Normalised Curves v Temperature
RDS(on) Drain-Source On-Resistance (Ω)

-ISD Reverse Drain Current (A)

100 2V 10
-VGS
2.5V
10 3V T = 150°C
3.5V 1
4V
1
5V T = 25°C
0.1
0.1 10V
VGS= 0V
T = 25°C
0.01 0.01
0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2
-ID Drain Current (A) -VSD Source-Drain Voltage (V)
On-Resistance v Drain Current Source-Drain Diode Forward Voltage

ZXMP6A17GQ 5 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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Typical Characteristics (continued)

ADVANCE INFORMATION

1000 10
VGS = 0V

-VGS Gate-Source Voltage (V)

800 f = 1MHz
C Capacitance (pF)

CISS
600 6
COSS

400 CRSS 4

200 ID = -2.3A
2
VDS = -30V

0 0
0.1 1 10 0 2 4 6 8 10 12 14 16 18
-VDS - Drain - Source Voltage (V) Q - Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge

Test Circuits
Current
regulator
QG

12V 0.2mF 50k Sameas

D.U.T

VG QGS QGD
VDS
IG
D.U.T

ID
VGS

Charge

Basic gate charge waveform Gate charge test circuit

VDS

90% RD

VGS VDS

RG VDD
10%
VGS Pulse width , 1mS
Duty factor 0.1%
tr t d(of ) tr t d(on)

t (on) t (on)

Switching time waveforms Switching time test circuit

ZXMP6A17GQ 6 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCE INFORMATION

D
b1 Q
C
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
E E1 b 0.60 0.80 0.70
b1 2.90 3.10 3.00
Gauge C 0.20 0.30 0.25
Plane D 6.45 6.55 6.50
0.25
Seating
E 3.45 3.55 3.50
Plane L E1 6.90 7.10 7.00
e1 e - - 4.60
b 0°
-1 e1 - - 2.30
e 0°
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
A A1 7° All Dimensions in mm

7°

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1

Y1

Dimensions Value (in mm)

C 2.30
C1 6.40
X 1.20
C1 Y2 X1 3.30
Y 1.60
Y1 1.60
Y2 8.00

X C

ZXMP6A17GQ 7 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
ADVANCE INFORMATION

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Copyright © 2015, Diodes Incorporated

www.diodes.com

ZXMP6A17GQ 8 of 8 March 2015

Document Number DS36686 Rev. 3 - 2 www.diodes.com © Diodes Incorporated