w-l

TABLE 3.1. Energy Gap of Some Materials. . The net p-rz junctitn .-'::;:,.
Material I_
S- Na. Energy gap (eV) S. No. Material Energy gap (e'\

1. si 1.1 7. InP 1.27 t-

2. CdTe 1.44 8. ZnO -1.-1
CdS a la
3. 9. ZnTe 2.2 ,\'hen the junction becomc. . -. :l
4. GaAs 1.40 10. AlSb 1.63
region decreases but cioe. r. .
5. curS r.80 11. SnO, 3.8
6. CuInSe, 1.01 t2. Ge 0.67
lr
CY
In order to lower the cost of the solar cell. the efficiencv should be
But there are some losses which causes the lower efficiency. Different semi
lt
materials are suited only for specific spectral range. Therefore, a specific portio:
-Jr
l'"' the radiant energy cannot be used, because the photon do not have enough ener-s,

50
,{tl

FrE

iVhenR=0,i.e. V=O,thenf,=0.
iso
.; this condition is called short-circl
o
C I =IL=
0)

Ezo
)pen circuit condition occur-s i.-
1,,

uJ -r.l)

I_

Ii
tl - :
0,8 I,0 1,2 1,4 'l
,6 .1
,8
Band Gaps in eV
t,
Fig. 3.10. Theoretical Maximum Efficiency of Various Solar Cells. --L +l
Io
= -,-
activate the charge carriers. In other words a certain amount of surplus photon e
is transformed into heat rather than into electrical energy. optical losses also cV
-t'{L

such as shadowing of the cell surface through contact with the glass surface or KT
of incoming rays on the cell surface. Other losses are electrical resistance losses in
semiconductor and connecting cable. The heat losses cannot be further redued because
inherent physical limits imposed by the materials themselves. This leads to a
maximum level of efficiency i.e. approximately 28Vo for crystal silicon. \'-I characteristic of solar cell is ._
?ower delivered to the load P = , .
LYSIS
?ut the value of / from equarior :
Consider the p-njunction with resistive load as shown in Fig. 3.11 Even with
bias applied to the junction, an electric held exists in the deplection or junction P = I.
when the solar cell is illuminated, electron-holes pairs are generated in the
region that will swept out producing the photocurrent f. in the reverse-bias di
For maximum power delivered t,- ,

The photocurrent 1. produces a voltage drop across the resistive load

,lP
dV =,.,
ioru.ard biases the p-n junction. The forward-bias voltage produces forward-
l,'L- 1,,
Ilcxo (r,v
.{'L-^r-\
) I I t
L "' l- I t- 'r' ----
xr) I ;
 1,. The net p-njunction cuffent, in the reverse bias direction is
Energy gap (eV) I = Ir - Ir
1.27
3.3
t = r t- ro (#)_,] ...(3.1)
2.2
[.*n
When the junction becomes forward
1.63 biased, the magnitude of electric lreld in
&pletion region decreases but does not
3.8 change the direction.
0.67

prld be increased-
ient semiconductu
specific portion o{
; enough energy to

Fig. 3.1I.
i'hen
= 0, i'e' v =.?, then 1, = 0. This is short circuit condition.
rR
.,- ihrs condition is called short_circuit The current
current 1,,..
I =L = I ...(3.2)
::n circuit condition occurs*i.n R'_, -, the net current is zero. Then from
:'lt

1= o= rL-ro["-(#)_,] ...(3.3)

r,= rol,*p$) ,l
la r Cells.
:,..r photon ener-s'
t*' =,*(#)
.:-ises also occu:
-::ice or reflectic:
,--rce losses in th:
# =,,[,.f]
'-:dued because,-'
v,, =
E:) io a theoreticr +r[r- * ...(3.4)
: ::on. ,
:haracteristic of solar cell is shown in
Fig. 3.12.
I , :r delivered to the load p
: , :r.te value = Vl
of 1 from equation (3.1)
. , Even with zer
,. junction regio: P = I, .v * t,,le^ ( cV \ .-l
t1v
c in the depletic: 17 )- ...(3.s)
:-:-bias directio:
, r\imum power derive,.o ; ;;. ,;j""ol
dP
r).1\e load whi.: -;;
tlV =0
--:s forward-bt.
-nf"* (*)-']-. ,.,(#).-o(*) = o
 Example 3.1. Calculatt
@ 'u
ing parameters
- I,v*(#) *, (*) V
'o! = 0,lJ\, ,'
r, = I o+
II
s
""r(*) Intensit

!r= =
"*p(*)-7+v*(#)*,
(*) Solution.

t*?t,,,, = "tP,77:l'-
..-,t\,,i,,''t't
Ar_l
...(.1 ,'

maximum power and its value can b'

Where V,, is the voltage which produces
put equation (3'6) in equation(3'i
by trial and trtJt' For caliulating 1""
calculated
and solve for 1,,,

.'\ ,,, , .
1". fa
,_IV
-,+llt */") (3.7)
I
l .,.rrding to type oi -:. -

t
r,, -
l+
t,\'. .
"'
t " \lortocrl stallinc .
P,'lyct'r'rtall ttc .i..-'
KT
\rttorphous si1r.
'v"' u, * l,,l
' '.)rt()Li\stlllittc
p
I r,, -= t. t -- Kf '' .y., ...t-1.8r
| ttt ltt, - ,,V
' n: Nlotrre ir -:..
tn ki ' . :\ t)i wai'er"s.
'ih,
0 n-type semi-conductor. I
Power is zero at point A because 'I = Vm Vo.
V+ .'. iir.tlllin.' .,
Power is maximum at Point B (equal
During solidification of
Fig. 3.12. V'I Characteristic of
to area under the rectangle) Solar Cell. The size o1 crr... :
Power is zero at Point C because V =
0
.. icon is cooled . .,
It is preferable to operate a solar celi with *i1'T::p"";T::::l:=T.:"*i:
The point B solar cells made from p
, ,"'.tj;,:ilffHr*r* power and, rherefore, maximurn efficiency. . r'lilciencf ir I
known as maximum power point (MPP)' . -iircon film is cie'.- . '. -
Theconversionefficiencyofasolarcellisdefinedastheratioofoutputpot 0r thin ia1'er .: . . '
output
to incident optical power' For maximum power . ltie to 1|1g lpl .. :'
-' ihun that 01' -,
n, = P,
:

xroovo ':1lcl'11 \tlLll -.'

P,,

V* I* xl1o2o ."(
= Pin
- ,nduct()r' ilirti..-.
,,'nlin-r pltoit tl. ' -

1"
Maximum possible current in the,solar cell = ,.,1 roltage ltn.:.
cell ie:
Maximum possible voltage in the solar = Vo" i11 :,-.i .r.' -_

'.'L;.riineCte.l
(peak) power to the product of 1"" and
Filring factor is the ratio of muri-um
,

. 'rrcl pl.rnt. . .

...(3 -.1 !tct\\\ll i.,

Filling factor (FF) = , ir.' eir-meni'

**
lLrav proJir,.. -
or, P* = Ir, %" FF . -: and t'ar'aiir,_-
ri, = ft"ii"nt solar radiation x Area of solar cell
Vt't1'"FF . . ',, 'i\llll ph0t0\ :. -
...13
= tn.ia.'ra*tr, *a*iron x Area of solal cell - ,, ,1,,\ oltui. ., '
'1
: i dlrect cLrl-ii. --
The value of F.F lies between 0.7 to 0'8'