Vedic 1

Power Electronics
WORKSHOP AT VEDIC BANGALORE

From: 15/03/2024 - 17/03/2024
Day1: Power Electronics applications ,wind energy, Solar cell, Fuel
cell, regulators.
Forenoon session:
Pulse-width modulation (PWM):
This is a powerful technique for controlling analog circuits with a
microcontroller's digital outputs. PWM is used in many applications, ranging
from communications to power control and conversion. For example, the PWM
is commonly used to control the speed of electric motors, the brightness of
lights, in ultrasonic cleaning applications.
Types:
1.Space vector pulse width modulation
2. Sinusoidal pulse width modulation
3. Bang-bang pulse width modulation
4. Hysteresis Pulse Width Modulation
Space vector modulation is responsible for generating pulse width modulated signals to
control the switches of an inverter, which then produces the required modulated voltage to
drive the motor at the desired speed or torque. Space vector modulation is also known as
space vector pulse width modulation (SVPWM)
Figure-1: Space vector pulse width modulation
Sinusoidal pulse width modulation (SPWM) The SPWM mainly is employed in industrial
applications and based on the comparison of modulation and carrier signals. A sine wave
(modulation signal, vm) is compared with two triangular waveforms (carrier signals, vc1 and
vc2) to generate PWM signals
Figure-2: Sinusoidal pulse width modulation

Bang-bang pulse width modulation (BBPWM) is a control method that involves rapidly
switching a digital output between two states, typically fully on and fully off, to regulate the
average power delivered to a load. The duty cycle of the signal (the ratio of time spent in the
on state to the total period) determines the average power output. This method is commonly
used in applications such as motor control, power supplies, and LED dimming.
Figure-3: Bang-bang pulse width modulation
Hysteresis Pulse Width Modulation (HPWM) is a control technique used in power converters
and motor drives to regulate the output voltage or current. Unlike traditional PWM methods,
which compare a reference signal with a modulating signal to generate the PWM waveform,
HPWM uses a hysteresis band around the reference signal to control the switching of the
power devices.
Figure-4: Hysteresis Pulse Width Modulation

Power Electronics applications:
fan regulator, air-conditioning, induction cooking, light dimmer, emergency lights, vacuum
cleaners, personal computers, UPS, battery charges.
Wind Energy:
Figure-5: Wind Energy System

Input: wind energy is a form of renewable energy that harnesses the power of the wind to generate
electricity.
Output: It is in the form of AC, after using filters it is directly connected to the Grid.
Solar energy:
Figure-6: Solar Energy system

Power electronic devices are used to convert electricity from one form to another. A common
example of a power electronics device is an inverter, which converts direct current (DC)
electricity generated by solar photovoltaic (PV) panels into alternating current (AC)
electricity for use on the electrical grid
Fuel cell:
Figure-7: Fuel Energy System

Fuel cells in power electronics provide clean, efficient electricity for stationary power
generation, distributed generation, grid support, transportation, and portable applications.
Afternoon session:
Regulators:
Regulator" refers to a device or component used in power electronics to control or regulate
the flow of electrical energy, typically by adjusting voltage or current levels .
There are two types:
1.liner regulators.
2.switching regulators.
Load regulation = (voltage no load — voltage full load)/voltage no load
line regulation = (V out low line – V out high line) / V out nominal
DAY 2 : POWER ELECTRONICS HARDWARE DESIGN

Forenoon session:
POWER ELECTRONICS IN AUTOMOTIVE APPLICATIONS
 Motor Drives
 Battery Management systems
 DC-DC converters
 Onboard chargers
 Regenerative Braking Systems
 Power steering systems
EFFECT AND SOURCE OF DAMPING
Overdamped, critically damped, and underdamped systems are terms used to describe the
behaviour of a damped harmonic oscillator, such as a mass-spring-damper system.
I. OVER DAMPING
An overdamped system occurs when the damping is so strong that the system returns to its
equilibrium position without oscillating.
II. CRITICAL DAMPING
A critically damped system returns to its equilibrium position as quickly as possible without
oscillating.
III. UNDER DAMPING
An underdamped system occurs when the damping is not strong enough to prevent
oscillation, causing the system to overshoot the equilibrium position before settling down.
Figure-8
DAMPING FACTOR :
The Damping ratio is a system parameter that describes how rapidly oscillations decay from
one bound to another.
Damping Factor = R/2 √(C/L)
Q FACTOR :
The quality factor is a ratio of resonant frequency to bandwidth. It relates the maximum or
peak energy stored in the circuit to the energy dissipated during each cycle of oscillation.
Q Factor = 1/R √(L/C)
WIDE VARIETY OF DEVICE TECHNOLOGIES :
 MOSFET’S
Figure-9: Mosfet
1.LV MOSFET (<100)

2.MV, HV MOSFET (>100)
3.SJ MOSFET/ COOL MOSFET
4.GaN
MV" and "HV" typically refer to MOSFETs (Metal-Oxide-Semiconductor Field-
Effect Transistors) designed for specific voltage ranges.
"MV" stands for Medium Voltage MOSFETs, which are typically designed to
operate in voltage ranges up to a few hundred volts.
"HV" stands for High Voltage MOSFETs, which are designed to handle higher
voltage levels, typically starting from a few hundred volts and going up to several
thousand volts.
 IGBT’S
Figure-10 : IGBT
IGBT stands for insulated-gate bipolar transistor. It is a bipolar transistor with an
insulated gate terminal. The IGBT combines, in a single device, a control input with a
MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are
suitable for high-voltage, high-current applications
1. Fast switching IGBT

2. IGBT with SC rating
3. Ignition IGBT
 DIODES
Figure-11 : Diodes
1. Rectifier Diode
A rectifier diode is a semiconductor device used to convert alternating current
(AC) into direct current (DC). It allows current to flow in only one direction,
blocking the flow in the opposite direction, thus rectifying the AC signal.
2. Fast Recovery Diode
A fast recovery diode is a type of rectifier diode designed to have a short reverse
recovery time, making it suitable for high-frequency applications where fast
switching is required.
3. Schottky Diode
A schottky diode is a type of semiconductor diode that has a low forward voltage
drop and fast switching characteristics. It is formed by the junction of a metal
layer and a semiconductor material, typically silicon.
4. SIC Schottky Diode
A Silicon Carbide (SiC) Schottky diode is a type of Schottky diode where the
semiconductor material used is silicon carbide (SiC) instead of silicon (Si). SiC
Schottky diodes offer several advantages over traditional silicon Schottky diode
 GATE DRIVERS
Figure-12: GATE DRIVERS
1. Optocoupler Type
In gate driver circuits, optocouplers are commonly used to provide electrical
isolation between the input (control) and output (gate) sides of the circuit. The
type of optocoupler used in gate drivers depends on factors such as speed, voltage
rating, and application requirements. Here are some common types of
optocouplers used in gate driver circuits
2. Pulse Transformer
A pulse transformer is a type of transformer specifically designed to transmit
rectangular electrical pulses, typically with fast rise and fall times, from one
circuit to another while providing electrical isolation between the two circuits.
Unlike traditional transformers used for AC power transmission, pulse
transformers are optimized for high-frequency and transient signals rather than
continuous waveforms.
3. Junction Isolation Type
Junction isolation is a technique used in semiconductor device fabrication to
electrically isolate individual components or regions on a silicon substrate. There
are several methods of junction isolation, each with its own advantages and
limitations.
4. Silicon on insulators (SOI) Typ
Silicon-on-Insulator (SOI) is a semiconductor technology that involves fabricating
devices on a thin layer of silicon (the "device layer") which is separated from the
bulk silicon substrate by a buried oxide (BOX) layer. This technology offers
several advantages over traditional bulk silicon substrates
5. Coreless Transformer Type
A coreless transformer is a type of transformer that does not have a traditional
magnetic core made of ferromagnetic materials like iron or ferrite. Instead, it
relies on the magnetic properties of the windings themselves to transfer energy
from the primary winding to the secondary winding.
Day 3 : Power Electronics inline with research

Forenoon Session:
Advancement of Device Technology

The advancements in power electronic switches are to increase the
switching speed that is to reduce the time taken for the switch to turn-
on and turn-off.
 BJT, MOFSET, IGBT, Diode,Thyristors, GTO’s etc.
 Silicon, Conventional Silicon(SJ), Superjunction(SJ), Silicon
Carbide, Gallium Nitride.
Parameters Silicon Gallim Silicon Carbide

Nitride(GaN)
Band gap 1.12 3.39 3.26
0.23 3.3 2.2

Critical Field
Electron Mobility 1400 1500 950
Permitivity 11.8 9 9.7
Thermal
Conductivity 1.5 1.3 3.8
Power Electronics Design Engineer:

1.) Universal Skill required

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Power Electronics

WORKSHOP AT VEDIC BANGALORE

Figure-2: Sinusoidal pulse width modulation

Figure-4: Hysteresis Pulse Width Modulation

Figure-5: Wind Energy System

Figure-6: Solar Energy system

Figure-7: Fuel Energy System

DAY 2 : POWER ELECTRONICS HARDWARE DESIGN

1.LV MOSFET (<100)

1. Fast switching IGBT

Figure-12: GATE DRIVERS

Day 3 : Power Electronics inline with research

Advancement of Device Technology

Parameters Silicon Gallim Silicon Carbide

Band gap 1.12 3.39 3.26

0.23 3.3 2.2

Electron Mobility 1400 1500 950

Permitivity 11.8 9 9.7

Power Electronics Design Engineer:

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