STGW 30 H 60 DFB
STGW 30 H 60 DFB
STGW 30 H 60 DFB
STGWT30H60DFB
Datasheet
Features
• Maximum junction temperature: TJ = 175 °C
2
3
2
3 • High speed switching series
1 1
TO-247
• Minimized tail current
TO-247 long leads
• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
TAB
TO-3P
1
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
STGW30H60DFB
STGWA30H60DFB
STGWT30H60DFB
1 Electrical ratings
ICP (1)
Pulsed collector current 120
IFP (1)
Pulsed forward current 120
2 Electrical characteristics
Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC = 30 A 1.55 2
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 V
voltage
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75
IF = 30 A 2 2.6
IF = 30 A, TJ = 175 °C 1.6
Eoff (2) µJ
Turn-off switching energy - 572 -
Peak rate of fall of reverse (see Figure 27. Test circuit for inductive
dIrr/dt load switching) - 310 - A/µs
recovery current during tb
Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature
GIPG280120141353FSR GIPG280120141346FSR
Ptot IC
(W) (A)
250 60
200
40
150
100
20
50
VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C
0 0
0 25 50 75 100 125 150 175 TC (°C) 0 25 50 75 100 125 150 TC (°C)
Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)
IC GIPG280120141156FSR IC GIPG280120141206FSR
(A) VGE =15 V (A) VGE =15 V
VGE =13 V VGE =13 V
100 100
VGE =11 V VGE =11 V
80 80
60 60 VGE =9 V
VGE =9 V
40 40
20 20
VGE =7 V VGE =7 V
0 0
0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)
1.4 TJ = -40 °C
1.4
IC = 15 A
1.2 1.2
-50 0 50 100 150 TJ (°C) 15 30 45 60 IC (A)
Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area
GIPG090720141330FSR
IC GIPG280120141713FSR IC
(A) (A)
Vce(sat) limit
80
TC = 80 °C 100
60 10 µs
10
TC = 100 °C 100 µs
40
1 ms
1
20
Rectangular current shape (single pulse TC = 25°C,
(duty cycle = 0.5, VCC = 400 V, TJ ≤ 175°C; VGE=15V)
Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Normalized V(BR)CES vs junction temperature
AM16060v1 AM16059v2
V GE(th) V(BR)CES
(norm) (norm)
VCE = VGE, IC = 1 mA IC= 2mA
1.1
1.0
0.9
1.0
0.8
0.7
0.6 0.9
-50 0 50 100 150 T J (°C) -50 0 50 100 150 TJ(°C)
Figure 13. Capacitance variations Figure 14. Gate charge vs. gate-emitter voltage
C GIPG090720141358FSR
VGE (V)
GIPG280120141455FSR
(pF)
16 VCC = 520 V, IC = 30 A
Cies IG = 1mA
14
1000 12
10
100 6
4
Coes 2
Cres
10 0
0.1 1 10 100 VCE (V) 0 40 80 120 160 Qg (nC)
Figure 15. Switching energy vs collector current Figure 16. Switching energy vs gate resistance
GIPG090720141414FSR
E E GIPG090720141421FSR
(µJ) (μJ) VCC = 400 V, IC = 30 A,
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C VGE = 15 V, TJ = 175 °C Eon
1400
1600
EON 1200
1200
Eoff
1000
800
800
EOFF
400
600
0 400
0 10 20 30 40 50 60 IC(A) 0 10 20 30 40 RG (Ω)
Figure 17. Switching energy vs temperature Figure 18. Switching energy vs collector emitter voltage
GIPG090720141431FSR
E E GIPG090720141440FSR
(µJ) (μJ) IC = 30 V, RG = 10 Ω,
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A VGE = 15 V, TJ = 175 °C Eon
800 1000
EON
800
600
600
Eoff
400 EOFF
400
200
200
0 0
20 60 100 140 TJ(°C) 100 200 300 400 500 VCE (V)
Figure 19. Switching times vs collector current Figure 20. Switching times vs gate resistance
GIPG100720141533FSR GIPG100720141549FSR
t t
(ns) (ns)
TJ= 175°C, VGE= 15V, TJ= 175°C, VGE= 15V, tdoff
RG= 10Ω, VCC= 400V IC= 30A, VCC= 400V
tdoff
100
tf
tdon
100
tdon
10
tf
tr
tr
1 10
0 10 20 30 40 50 IC(A) 0 10 20 30 40 RG(Ω)
150
40 TJ =175°C
100
20 TJ =25°C 50
TJ =25°C
0
0 0 500 1000 1500 2000 di/dt(A/µs)
0 500 1000 1500 2000 2500 di/dt(A/µs)
Figure 23. Reverse recovery charge vs diode current Figure 24. Reverse recovery energy vs diode current
slope slope
GIPG110720140854FSR GIPG110720140859FSR
Qrr Err
(nC) (µJ)
IF = 30A, Vr = 400V IF = 30A, Vr = 400V
TJ =175°C 1000
2000
800 TJ =175°C
1500
600
1000 TJ =25°C
400
500
200 TJ =25°C
0 0
0 500 1000 1500 2000 di/dt(A/µs) 0 500 1000 1500 2000 di/dt(A/µs)
0.2
0.1 0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t
Single pulse tp
t
-2
10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10
3 Test circuits
Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit
A A
C
L=100 µH k
G k
E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E
k
-
k
AM01504v1 AM01505v1
VCE tr(Voff)
10% IRRM t
tcross
10%
90% IRRM
IC td(off)
10% VRRM
td(on) tf
tr(Ion)
ton toff
AM01506v1
dv/dt
GADG180720171418SA
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
0075325_9
mm
Dim.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
8463846_2_F
mm
Dim.
Min. Typ. Max.
8045950_3
mm
Dim.
Min. Typ. Max.
5 Ordering information
Revision history
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5