STGW 30 H 60 DFB

Download as pdf or txt
Download as pdf or txt
You are on page 1of 21

STGW30H60DFB, STGWA30H60DFB,

STGWT30H60DFB
Datasheet

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Features
• Maximum junction temperature: TJ = 175 °C
2
3
2
3 • High speed switching series
1 1

TO-247
• Minimized tail current
TO-247 long leads
• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
TAB

• Tight parameter distribution


3
• Safe paralleling
2

TO-3P
1
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications
• Photovoltaic inverters
• High frequency converters

Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Product status link

STGW30H60DFB
STGWA30H60DFB
STGWT30H60DFB

DS10467 - Rev 4 - May 2019 www.st.com


For further information contact your local STMicroelectronics sales office.
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 600 V

Continuous collector current at TC = 25 °C 60


IC
Continuous collector current at TC = 100 °C 30 A

ICP (1)
Pulsed collector current 120

Gate-emitter voltage ±20


VGE V
Transient gate-emitter voltage ±30
Continuous forward current at TC = 25 °C 60
IF
Continuous forward current at TC = 100 °C 30 A

IFP (1)
Pulsed forward current 120

PTOT Total power dissipation at TC = 25 °C 260 W

TSTG Storage temperature range - 55 to 150


°C
TJ Operating junction temperature range - 55 to 175

1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.58

RthJC Thermal resistance junction-case diode 2.08 °C/W

RthJA Thermal resistance junction-ambient 50

DS10467 - Rev 4 page 2/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC = 30 A 1.55 2
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 V
voltage
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75

IF = 30 A 2 2.6

VF Forward on-voltage IF = 30 A, TJ = 125 °C 1.7 V

IF = 30 A, TJ = 175 °C 1.6

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 3659 -

Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 101 - pF

Cres Reverse transfer capacitance - 76 -

Qg Total gate charge - 149 -


VCC = 520 V, IC = 30 A, VGE = 0 to 15 V
Qge Gate-emitter charge - 25 - nC
(see Figure 28. Gate charge test circuit)
Qgc Gate-collector charge - 62 -

DS10467 - Rev 4 page 3/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 37 -


ns
tr Current rise time - 14.6 -

(di/dt)on Turn-on current slope - 1643 - A/µs

td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, - 146 -


RG = 10 Ω (see Figure 27. Test circuit ns
tf Current fall time for inductive load switching) - 23 -

Eon (1) Turn-on switching energy - 383 -

Eoff (2) Turn-off switching energy - 293 - µJ

Ets Total switching energy - 676 -

td(on) Turn-on delay time - 35 -


ns
tr Current rise time - 16.1 -

(di/dt)on Turn-on current slope - 1496 - A/µs

td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, - 158 -


RG = 10 Ω, TJ = 175 °C (see Figure 27. ns
tf Current fall time Test circuit for inductive load switching) - 65 -

Eon (1) Turn-on switching energy - 794 -

Eoff (2) µJ
Turn-off switching energy - 572 -

Ets Total switching energy - 1366 -

1. Including the reverse recovery of the diode.


2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 53 - ns

Qrr Reverse recovery charge - 384 - nC


IF = 30 A, VR = 400 V, VGE = 15 V,
Irrm Reverse recovery current - 14.5 - A
di/dt = 1000 A/μs (see Figure 27. Test
Peak rate of fall of reverse circuit for inductive load switching)
dIrr/dt - 788 - A/µs
recovery current during tb

Err Reverse recovery energy - 104 - µJ

trr Reverse recovery time - 104 - ns

Qrr Reverse recovery charge - 1352 - nC


IF = 30 A, VR = 400 V, VGE = 15 V,
Irrm Reverse recovery current di/dt = 1000 A/µs, TJ = 175 °C - 26 - A

Peak rate of fall of reverse (see Figure 27. Test circuit for inductive
dIrr/dt load switching) - 310 - A/µs
recovery current during tb

Err Reverse recovery energy - 407 - µJ

DS10467 - Rev 4 page 4/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature
GIPG280120141353FSR GIPG280120141346FSR
Ptot IC
(W) (A)

250 60

200
40
150

100
20

50
VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C
0 0
0 25 50 75 100 125 150 175 TC (°C) 0 25 50 75 100 125 150 TC (°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)

IC GIPG280120141156FSR IC GIPG280120141206FSR
(A) VGE =15 V (A) VGE =15 V
VGE =13 V VGE =13 V
100 100
VGE =11 V VGE =11 V

80 80

60 60 VGE =9 V
VGE =9 V
40 40

20 20

VGE =7 V VGE =7 V
0 0
0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)

Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current


GIPG280120141440FSR GIPG280120141446FSR
VCE(sat) VCE(sat)
(V) VGE = 15 V (V) VGE = 15 V
2.2 2.4
IC = 60 A
2.2
2.0 TJ = 175 °C
2.0
1.8
1.8
TJ = 25 °C
1.6 IC = 30 A
1.6

1.4 TJ = -40 °C
1.4
IC = 15 A
1.2 1.2
-50 0 50 100 150 TJ (°C) 15 30 45 60 IC (A)

DS10467 - Rev 4 page 5/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)

Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area
GIPG090720141330FSR
IC GIPG280120141713FSR IC
(A) (A)
Vce(sat) limit
80
TC = 80 °C 100

60 10 µs
10
TC = 100 °C 100 µs
40
1 ms

1
20
Rectangular current shape (single pulse TC = 25°C,
(duty cycle = 0.5, VCC = 400 V, TJ ≤ 175°C; VGE=15V)

0 RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C 0.1


100 101 102 f (kHz) 1 10 100 VCE(V)

Figure 9. Transfer characteristics


Figure 10. Diode VF vs forward current
GIPG090720141349FSR
VF (V)
IC GIPG280120141330FSR
(A)
2.8
VCE = 6 V TJ= -40°C
100
2.4
80 TJ= 25°C
Tj = 175 °C 2.0
60
1.6 TJ= 175°C
Tj = 25 °C
40
1.2
20
0.8
0 10 20 30 40 50 60 IF(A)
5 7 9 11 VGE (V)

Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Normalized V(BR)CES vs junction temperature
AM16060v1 AM16059v2
V GE(th) V(BR)CES
(norm) (norm)
VCE = VGE, IC = 1 mA IC= 2mA
1.1

1.0

0.9

1.0
0.8

0.7

0.6 0.9
-50 0 50 100 150 T J (°C) -50 0 50 100 150 TJ(°C)

DS10467 - Rev 4 page 6/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)

Figure 13. Capacitance variations Figure 14. Gate charge vs. gate-emitter voltage
C GIPG090720141358FSR
VGE (V)
GIPG280120141455FSR

(pF)
16 VCC = 520 V, IC = 30 A
Cies IG = 1mA
14

1000 12

10

100 6

4
Coes 2
Cres
10 0
0.1 1 10 100 VCE (V) 0 40 80 120 160 Qg (nC)

Figure 15. Switching energy vs collector current Figure 16. Switching energy vs gate resistance
GIPG090720141414FSR
E E GIPG090720141421FSR
(µJ) (μJ) VCC = 400 V, IC = 30 A,
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C VGE = 15 V, TJ = 175 °C Eon
1400
1600

EON 1200
1200
Eoff
1000
800
800
EOFF
400
600

0 400
0 10 20 30 40 50 60 IC(A) 0 10 20 30 40 RG (Ω)

Figure 17. Switching energy vs temperature Figure 18. Switching energy vs collector emitter voltage
GIPG090720141431FSR
E E GIPG090720141440FSR
(µJ) (μJ) IC = 30 V, RG = 10 Ω,
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A VGE = 15 V, TJ = 175 °C Eon
800 1000

EON
800
600

600
Eoff
400 EOFF
400

200
200

0 0
20 60 100 140 TJ(°C) 100 200 300 400 500 VCE (V)

DS10467 - Rev 4 page 7/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)

Figure 19. Switching times vs collector current Figure 20. Switching times vs gate resistance
GIPG100720141533FSR GIPG100720141549FSR
t t
(ns) (ns)
TJ= 175°C, VGE= 15V, TJ= 175°C, VGE= 15V, tdoff
RG= 10Ω, VCC= 400V IC= 30A, VCC= 400V
tdoff
100
tf
tdon
100
tdon

10
tf
tr

tr
1 10
0 10 20 30 40 50 IC(A) 0 10 20 30 40 RG(Ω)

Figure 21. Reverse recovery current vs diode current


Figure 22. Reverse recovery time vs diode current slope
slope
GIPG110720140846FSR
GIPG100720141607FSR trr
Irm (µs)
(A) IF = 30A, Vr = 400V
IF = 30A, Vr = 400V
200
60 TJ =175°C

150

40 TJ =175°C
100

20 TJ =25°C 50

TJ =25°C
0
0 0 500 1000 1500 2000 di/dt(A/µs)
0 500 1000 1500 2000 2500 di/dt(A/µs)

Figure 23. Reverse recovery charge vs diode current Figure 24. Reverse recovery energy vs diode current
slope slope
GIPG110720140854FSR GIPG110720140859FSR
Qrr Err
(nC) (µJ)
IF = 30A, Vr = 400V IF = 30A, Vr = 400V
TJ =175°C 1000
2000

800 TJ =175°C
1500
600
1000 TJ =25°C
400

500
200 TJ =25°C

0 0
0 500 1000 1500 2000 di/dt(A/µs) 0 500 1000 1500 2000 di/dt(A/µs)

DS10467 - Rev 4 page 8/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)

Figure 25. Thermal impedance for IGBT


ZthTO2T_B
K
δ=0.5

0.2

0.1 0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t

Single pulse tp

t
-2
10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10

Figure 26. Thermal impedance for diode

DS10467 - Rev 4 page 9/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 30. Diode reverse recovery waveform

Figure 29. Switching waveform


di/dt Qrr
90%
trr
VG 10% IF
ts tf
90%

VCE tr(Voff)
10% IRRM t
tcross
10%
90% IRRM

IC td(off)
10% VRRM
td(on) tf
tr(Ion)
ton toff

AM01506v1

dv/dt

GADG180720171418SA

DS10467 - Rev 4 page 10/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

DS10467 - Rev 4 page 11/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 package information

4.1 TO-247 package information

Figure 31. TO-247 package outline

0075325_9

DS10467 - Rev 4 page 12/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 package information

Table 7. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

DS10467 - Rev 4 page 13/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 long leads package information

4.2 TO-247 long leads package information

Figure 32. TO-247 long leads package outline

8463846_2_F

DS10467 - Rev 4 page 14/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 long leads package information

Table 8. TO-247 long leads package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.90 5.00 5.10


A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25

DS10467 - Rev 4 page 15/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-3P package information

4.3 TO-3P package information

Figure 33. TO-3P package outline

8045950_3

DS10467 - Rev 4 page 16/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-3P package information

Table 9. TO-3P package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.60 4.80 5.00


A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20.00 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
ØP 3.30 3.40 3.50
ØP1 3.10 3.20 3.30
Q 4.80 5.00 5.20
Q1 3.60 3.80 4.00

DS10467 - Rev 4 page 17/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Ordering information

5 Ordering information

Table 10. Order codes

Order code Marking Package Packing

STGW30H60DFB GW30H60DFB TO-247


STGWA30H60DFB GWA30H60DFB TO-247 long leads Tube
STGWT30H60DFB GWT30H60DFB TO-3P

DS10467 - Rev 4 page 18/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB

Revision history

Table 11. Document revision history

Date Revision Changes

01-Aug-2014 1 Initial version.


Modified: Table 2, Table 4 and 6
Modified: Figure 16
17-Feb-2016 2 Updated: Section 3
Updated: Section 4.1: TO-247, STGW30H60DFB
Minor text changes
Added device in TO-247 long leads.
04-Nov-2016 3 Document updated accordingly.
Minor text changes.
Modified Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics
(TJ = 175 °C), Figure 9. Transfer characteristics, Figure 7. Collector current vs
10-May-2019 4 switching frequency, Figure 18. Switching energy vs collector emitter voltage.
Minor text changes.

DS10467 - Rev 4 page 19/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10


4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18


Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

DS10467 - Rev 4 page 20/21


STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB

IMPORTANT NOTICE – PLEASE READ CAREFULLY


STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved

DS10467 - Rev 4 page 21/21

You might also like