S2A, S2B, S2D, S2G, S2J, S2K, S2M

www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
DO-214AA (SMB) 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
PRIMARY CHARACTERISTICS please see www.vishay.com/doc?99912
IF(AV) 1.5 A
TYPICAL APPLICATIONS
50 V, 100 V, 200 V, 400 V, 600 V,
VRRM
800 V, 1000 V For use in general purpose rectification of power supplies,
IFSM 50 A inverters, converters and freewheeling diodes for consumer,
IR 1.0 μA automotive and telecommunication.
VF 1.15 V
MECHANICAL DATA
TJ max. 150 °C
Case: DO-214AA (SMB)
Package DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Diode variations Single die
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL S2A S2B S2D S2G S2J S2K S2M UNIT
Device marking code SA SB SD SG SJ SK SM
Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Max. RMS voltage VRMS 35 70 140 280 420 560 700 V
Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Max. average forward rectified current at TL= 100 °C IF(AV) 1.5 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 50 A
superimposed on rated load
Operating and storage temperature range TJ, TSTG - 55 to + 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL S2A S2B S2D S2G S2J S2K S2M UNIT
Max. instantaneous forward
1.5 A VF 1.15 V
voltage
Max. DC reverse current at TA = 25 °C 1.0
IR μA
rated DC blocking voltage TA = 125 °C 125
IF = 0.5 A, IR = 1.0 A,
Typical reverse recovery time trr 2.0 μs
Irr = 0.25 A
Typical junction capacitance 4.0 V, 1 MHz CJ 16 pF

Revision: 14-Aug-13 1 Document Number: 88712

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 S2A, S2B, S2D, S2G, S2J, S2K, S2M
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Vishay General Semiconductor

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL S2A S2B S2D S2G S2J S2K S2M UNIT
RJA 53
Typical thermal resistance (1) °C/W
RJL 16
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
S2J-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
S2J-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
S2JHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel
S2JHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

1.75 10
Resistive or Inductive Load
Instantaneous Forward Current (A)
TJ = 150 °C
1.50
Average Forward Current (A)

1.25 TJ = 125 °C
1
1.00

0.75 TJ = 25 °C
60 Hz Resistive or 0.1
0.50 Inductive Load
P.C.B. Mounted
0.25 0.27" x 0.27" (7.0 mm x 7.0 mm)
Copper Pad Areas

0 0.01
50 70 90 110 130 150 0.3 0.5 0.7 0.9 1.1 1.3
Lead Temperature (°C) Instantaneous Forward Voltage (V)

Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics

50 1000
TL = 100 °C
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)

8.3 ms Single Half Sine-Wave TJ = 150 °C

40 100

30 10 TJ = 125 °C

20 1

TJ = 25 °C
10 0.1

0 0.01
1 10 100 0 20 40 60 80 100
Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics

Revision: 14-Aug-13 2 Document Number: 88712

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 S2A, S2B, S2D, S2G, S2J, S2K, S2M
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Vishay General Semiconductor

100 100

Transient Thermal Impedance (°C/W)

Junction Capacitance (pF)

10 10

1 1
0.1 1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t - Pulse Duration (s)

Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AA (SMB)
Cathode Band
Mounting Pad Layout

0.085 (2.159) MAX.

0.086 (2.20) 0.155 (3.94)
0.077 (1.95) 0.130 (3.30)
0.086 (2.18) MIN.

0.180 (4.57)
0.160 (4.06) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.220 (5.59) REF.

0.096 (2.44)
0.084 (2.13)

0.060 (1.52) 0.008 (0.2)

0.030 (0.76) 0 (0)
0.220 (5.59)
0.205 (5.21)

Revision: 14-Aug-13 3 Document Number: 88712

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12 1 Document Number: 91000