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    Buz93 Inchange

    Uploaded by

    ruslan futkaradze

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Buz93 Inchange

    Uploaded by

    ruslan futkaradze
    5 views2 pages

    Original Title

    BUZ93-INCHANGE

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    5 views2 pages

    Buz93 Inchange

    Uploaded by

    ruslan futkaradze

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc N-Channel Mosfet Transistor BUZ93

    ·FEATURES
    ·High speed switching
    ·Low RDS(ON)
    ·Easy driver for cost effective application
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·DESCRITION
    ·Automotive power actuator drivers
    ·Motor controls
    ·DC-DC converters

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL ARAMETER VALUE UNIT

    VDSS Drain-Source Voltage (VGS=0) 600 V

    VGS Gate-Source Voltage ±20 V

    ID Drain Current-continuous@ TC=25℃ 3.6 A

    IDM Drain Current-Single Plused 14.5 A

    Ptot Total Dissipation@TC=25℃ 80 W

    Tj Max. Operating Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    THERMAL CHARACTERISTICS

    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W

    Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc N-Channel Mosfet Transistor BUZ93
    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 600 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.1 4.0 V

    VSD Diode Forward On-voltage IS= 6.6A ;VGS= 0 1.4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2A 2.5 Ω

    IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

    IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 1 µA

    Gfs Forward Transconductance VDS= 25V；ID=2A 2.1 S

    td(on) Turn-on Delay Time 15


    VGS=10V;

    tr Rise Time ID=2.3A; 70

    VDD=30V; ns
    td(off) Turn-off Delay Time 95
    RGS=50Ω

    tf Fall Time 55

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not designed
    for use in equipment which require specialized quality and/or reliability, or in equipment which
    could have applications in hazardous environments, aerospace industry, or medical field. Please
    contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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