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    7 N 65

    Uploaded by

    Aris Romdoni
    The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

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    7 N 65

    Uploaded by

    Aris Romdoni
    323 views2 pages
    The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

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    siip

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    7n65

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    The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    323 views2 pages

    7 N 65

    Uploaded by

    Aris Romdoni
    The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor 7N65

    FEATURES
    Drain Current ID= 7A@ TC=25
    Drain Source Voltage
    : VDSS= 650V(Min)
    Static Drain-Source On-Resistance
    : RDS(on) = 1.35(Max) @VGS = 10 V
    Avalanche Energy Specified
    Fast Switching

    APPLICATIONS
    High speed switching applications in power supplies
    PWM motor controls
    High efficient DC to DC converters and bridge circuits.

    ABSOLUTE MAXIMUM RATINGS(Ta=25


    )
    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 650 V

    VGS Gate-Source Voltage-Continuous 30 V

    ID Drain Current-Continuous 7 A

    IDM Drain Current-Single Plused 28 A

    PD Total Dissipation @TC=25 142 W

    Tj Max. Operating Junction Temperature 150

    Tstg Storage Temperature -55~150

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 0.88 /W

    Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W

    isc websitewww.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor 7N65

    ELECTRICAL CHARACTERISTICS
    unless otherwise specified
    TC=25

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 650 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A 1.35

    IGSS Gate-Body Leakage Current VGS= 30V; VDS= 0 100 nA

    IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 1 A

    VSD Forward On-Voltage IS= 7A; VGS= 0 1.4 V

    Gfs Forward Transconductance VDS= 40VID= 3.5A 8 S

    isc websitewww.iscsemi.com 2 isc & iscsemi is registered trademark

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