SETO - SiC PowerElectronics September 2022 Public

M A R K E T R E S E A R C H S T U DY
SiC POWER ELECTRONICS

FOR SOLAR
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September 2022
This project was funded by the Department of Energy, an agency of the United States
Government, through a contract for Phase 0 Outreach and Assistance for the Small
Business Innovation Research/Small Business Technology Transfer Programs Office.
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or any agency thereof.
Prepared by DAWNBREAKER • 2117 Buffalo Road • Rochester, NY • 14624 • (585) 594-0025 • www.dawnbreaker.com
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Table of Contents
1.0 Introduction.......................................................................................................5
2.0 Silicon Carbide Device Market............................................................................6

2.1 Trends – Inverter Market is Led by Automotive Industry....................................... 6
2.2 Market Size for Power Electronics by Vertical.......................................................11
2.3 Market Drivers.........................................................................................................13
2.4 Market Barriers........................................................................................................14
2.5 SiC Device Manufacturers......................................................................................17
2.6 Movement toward Vertical Integration is Shaping the Landscape.......................18
3.0 Silicon Carbide and Photovoltaics.....................................................................19

3.1 Solar Inverters..........................................................................................................19
3.1.1 Types of Inverters............................................................................................ 20
3.3 SiC Inverters for PV................................................................................................ 21
3.4 SiC Device-based Solar Inverter Manufacturers................................................... 23
3.5 Bill of Materials – SiC Solar Inverters.................................................................... 26
3.6 Global Inverter Market............................................................................................ 29
3.6.1 Solar PV Key Suppliers.................................................................................... 31
4.0 Silicon Carbide Supply Chain and Key Players..................................................32

4.1 Supply Chain........................................................................................................... 32
4.1.1 SiC Materials Suppliers................................................................................... 33
4.2 SiC Crystal Growers................................................................................................ 34
4.2.1.1 onsemi Corporation / GT Advanced Technologies, Inc............................. 34
4.2.1.2 II-VI, Inc............................................................................................................ 35
4.3 Silicon Carbide Wafers........................................................................................... 36
4.3.1 SiC Wafer Capacity Expansion Announcements.......................................... 36
4.3.1.1 X-Fab Texas, Inc. – An Example of a U.S. Fab........................................... 37
4.3.2 Progress to 8” Wafers..................................................................................... 37
4.3.3 Innovations in SiC Wafer Manufacturing....................................................... 38
4.3.4 Key Players...................................................................................................... 39
4.3.4.1 Chinese SiC Manufacturers Entering Market............................................. 40
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4.4 Company Profiles................................................................................................... 43
4.4.1 Wolfspeed, Inc................................................................................................. 43
4.4.2 Fuji Electric Corporation................................................................................. 46
4.4.3 Infineon Technologies AG............................................................................... 47
4.4.4 ROHM Semiconductor.................................................................................... 49
4.4.5 STMicroelectronics N.V.................................................................................. 51
4.5 Other Notable U.S. Companies.............................................................................. 53
4.5.1 onsemi............................................................................................................. 53
4.5.2 UnitedSiC......................................................................................................... 53
4.5.3 Microchip Technology..................................................................................... 54
4.5.4 Genesic Semiconductor, Inc........................................................................... 54
4.5.5 Littelfuse, Inc................................................................................................... 54
4.5.6 Powerex, Inc.................................................................................................... 55
5.0 Summary..........................................................................................................55
Appendix A: Summary Tables of Selected SiC-based Inverters and Inverter Products

........................................................................................................................57
Endnotes....................................................................................................................62
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1.0 Introduction
Wide band gap (WBG) materials hold great promise to significantly outperform and
eventually replace traditional silicon. Silicon carbide (SiC) and gallium nitride (GaN) have
reached a level of maturity that allows use in power electronics applications. SiC is regarded
as a stronger candidate for power electronic applications above1.2kV, while GaN is ideal
for high-frequency applications in applications below 1200V. Existing 200 mm silicon
wafer semiconductor fabrication plant (commonly called a fab or foundry) can be used
for SiC manufacturing.
Table 1: WBG Materials
Materials Chemical Symbol Eg (eV)

Silicon Carbide SiC 3.3
Gallium Nitride GaN 3.4
Zinc Oxide ZnO 3.4
Gallium Oxide β-Ga2O3 4.8-4.9
Diamond C 5.5
Aluminum Nitride AlN 6.0
Source: MarketsandMarkets. “Silicon Carbide Market – Global Forecast to 2025.” (February 2020).
The growing market demand for SiC-based power electronics is driven by the rising
adoption of SiC devices by original equipment manufacturers (OEMs) of electric vehicles
and hybrid vehicles (EVs) in the power electronics market. Market consulting firm, Frost
& Sullivan believes that the majority of OEMs will transition to SiC in advanced power
electronics by the end of the decade. SiC technology is being used in EV low power
applications such as battery chargers, auxiliary DC- DC converters and solid-state circuit
breakers as well as EV inverters. Market consulting firm, Yole Développement (Yole) sees
a “prospering” EV market holding more than 60% of total device market share in 2025.
Another consulting firm, IHS Markit, expects the annual global SiC revenues to reach over
$5 billion by 2027, with electric and hybrid vehicles making up the majority of the sales.
With respect to solar, the reduction in price makes it possible to potentially produce
inverters and transformers (the systems that would use these chips) in the U.S. This
report provides an overview of the silicon carbide device market, the benefits of SIC for
solar inverters, as well as the supply chain and key players.
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2.0 Silicon Carbide Device Market
After a brief introduction to SiC- based power electronics in the automotive industry, this
section explores the possibilities with solar applications.
2.1 Trends – Inverter Market is Led by Automotive Industry
The growing demand for SiC-based power electronics is driven by the rising adoption
of SiC devices by OEMs of electric vehicles (EVs). According to market consulting firm
Yole Développment, the inverter market is driving the overall SiC-based EV market and is
expected to remain the sector with the highest potential for the overall power SiC market.1
Some EV applications are using SiC technology, primarily for low power applications,
such as battery chargers, auxiliary DC-DC converters, and solid-state circuit breakers.
SiC devices are also used in EV inverters. Frost & Sullivan anticipates SiC to increase its
penetration in EV powertrain from about 4% in 2021 to about 20%–25% in 2026.2
Figure 1: SiC Penetration in EV powertrain

Reprinted with permission of Frost & Sullivan. 3
After EVs, the next largest use case for SiC is expected to be in photovoltaics, specifically in
storage, where efficiency improvements can reduce the size of a battery, both in residential
and larger installations.4 Figure 2 provides a roadmap for SiC modules and MOSFETs
as proposed by Yole Group, a firm which specializes in market research, technology
and strategy analysis, and photonics module performance evaluation, focused on the
semiconductor industry and related fields.
6
Figure 2: SiC Power application Roadmap
Source: Yole Développement. (2022).5
The trend towards EVs is creating a need for fast DC charging. In this application, SiC-
based components can provide better performance than traditional Si and insulated-gate
bipolar transistor (IGBT) components due to their improved operating temperature, better
conduction losses, lower leakage currents, higher surge capacity and max voltage ratings,
and overall better power density.6 The 800V, which fills this need is expected to drive the
SiC market and eventually become the standard in EVs.7 Renewable energy, specifically
photovoltaics with the benefit of decarbonization is also driving the market.8
7
Figure 3: 800V architecture benefits in EVs.
Reprinted with permission of Frost & Sullivan.9
Automotive OEMs are expected to shift to 800V architecture due to cost, size, and weight,
higher power density and efficiency advantages. Examples include:
• Inverters: The transition from silicon-based IGBTs and fast-recovery diodes to
Wide-bandgap semiconductors such as SiC MOSFETs enables higher switching
frequencies up to 20kHz with power outputs up to 200kW.
• Onboard chargers: While Si-MOS/IGBT and SiC Schottky barrier diodes (SiC-
SBDs) are the most prevalent currently, the industry is already on the way to
adopting SiC-SBD/ SiC-MOSFETs for power outputs up to 20kW.
• DC-DC and DC-AC converters: SiC-MOSFETs is fast becoming the preferred
choice for converters, with power outputs up to 50kW for DC-DC converters and
up to 4kW for DC-AC converters.
• 800V architecture: 800V systems using SiC materials are a key enabler for fast
charging, gaining significance for increased EV penetration.10
8
Figure 4 is an automotive inverter roadmap (2022-2035) prepared by market research
firm Frost & Sullivan. This figure shows their predicted timeline for the replacement of
optimized Si semiconductor devices with SiC and GaN devices. This Figure also highlights
anticipated improved performance of inverters.11
Figure 4: Roadmap for Automotive Power SiC / GAN Devices

Below is a summary of selected partnerships which demonstrates the extent to which

manufacturers are collaborating with SiC device vendors. Tesla structured its SiC
supply chain with its own module-design intellectual property that was codeveloped
with STMicroelectronics and Boschman – with STMicroelectronics manufacturing the
devices.13
Table 1: Summary of Selected SiC EV Inverters
Developer/ SiC Device

Year Specifications
Manufacturer* Supplier
May 2022 Nio, Inc. NIO Inc. chose the latest VE-Trac™ Direct SiC onsemi
power modules from onsemi for its EVs. “The
VE-Trac Direct SiC is an integrated single side
direct cooling (SSDC) power module in a six-pack
configuration with a low turn on resistance of 1.7
mohm.”14
9
April 2022 Lucid Motors SiC MOSFET – “with low switching losses, Wolfspeed
minimal resistance, and high-power density, the
XM3 power modules contribute to the efficiency
and power density of Lucid’s 163-lb, 670-hp (74kg
500kW) electric motor.”15
March Semikron “ST and Semikron cooperated to integrate
2022 STPOWER SiC MOSFETs, which control power
switching in the main EV traction inverter, with
Semikron’s innovative fully sintered Direct
Pressed Die (DPD) assembly process. DPD
enhances module performance and reliability and
enables cost-effective power and voltage scaling.
Leveraging the parameters of ST’s SiC MOSFETs,
supplied as bare dice, Semikron has established
750V and 1200V eMPack platforms, addressing
applications from 100kW to 750kW and battery
systems from 400V to 800V.”
November BorgWarner BorgWarner won a supply order, scheduled to start NA
2021 in 2023 for 400-volt silicon carbide inverter for
various BEV models from a European OEM. The
400-volt silicon inverter as part of BorgWarner’s
iDM integrated drive module, whose customers
include Hyundai and an unnamed “leading
Chinese luxury electric vehicle brand.”16
2021 Vitesco Vitesco is supplying an 800-volt SiC inverter for NA
Technologies, Hyundai Motor Group’s electric vehicle platform.
the Spin-off The order volume is in the “three-digit million
of Automotive € range, and the quantities are likely to be
Supplier correspondingly high. …. Vitesco Technologies
Continental uses semiconductors made of silicon carbide for
the 800-volt inverter, which significantly increase
the energy efficiency.”17
2020 VisIC GaN for 800V power-bus motor inverter, which NA
Technologies can be used for an EV motor drive.18
(Israel)
2020 Delphi The company announced it has volume Wolfspeed SiC
Technologies production of SiC inverters, enabling electrical MOSFETs.
(Now BorgWarner) systems up to 800 V.19
Delphi also secured a $2.7 billion customer win

for volume production of SiC over eight years
with a firm it described as a “premier global
OEM.” Launch is expected in 2022, initially “for
a high-performance vehicle operating at up to
800 V.” Delphi is supplying 800-Volt inverters
to 3 of top 4 global premium OEMs.20
10
2020 Karma “Karma Automotive, founded in 2014, is a Not disclosed
Automotive, southern California based producer of luxury
Irvine, CA electric vehicles, headquartered in Irvine, CA
with an assembly plant located in Moreno Valley.
Karma sells vehicles via its dealer network in
North America, Europe, South America and the
Middle East.”21
SiC traction inverters are engineered in-house by

Karma’s Powertrain Power Electronics team, in
collaboration with the Power Electronic System
Laboratory at University of Arkansas.22
2021 Vitesco Vitesco is supplying an 800-volt SiC inverter for Not disclosed
Technologies, Hyundai Motor Group’s electric vehicle platform.
the spin-off The order volume is in the “three-digit million
of automotive € range, and the quantities are likely to be
supplier correspondingly high. …. Vitesco Technologies
Continental uses semiconductors made of silicon carbide for
the 800-volt inverter, which significantly increase
the energy efficiency.”23
*Not an exhaustive list
2.2 Market Size for Power Electronics by Vertical
A report by consulting firm MarketsandMarkets forecasts that the global SiC device market
will grow beyond $2 billion by 2026 from a $899 million business in 2021. Although the
market is driven by automotive applications, MarketsandMarkets believes that renewable
energy applications have a higher than 16 percent growth rate over the five years 2021
- 2026. SiC market for power electronics is projected to hold the largest market share
during the same period.24
Figure 5: SiC Market devices split by segment

Reprinted with permission of MarketsandMarkets
11
MarketsandMarkets segments the market by device type (discrete, bare die and module).
SiC discrete devices (SiC diodes and SiC MOSFETS), also known as wide-bandgap devices
held the largest share of the market. Growth is attributed to the increasing demand for SiC
discrete devices for use in numerous applications, including radio frequency and cellular
base station applications, as well as in power supplies and inverters.
Table 2: Global SiC for Solar by Device Market, 2021-2026 (USD Million)
Source: MarketsandMarkets. (September 2021).25

Reprinted with permission of MarketsandMarkets
SiC is of great interest for solar PV and energy storage systems. Various SiC devices
such as power modules, diodes, and inverters are used in PV systems, among which, SiC
diodes and MOSFET are viewed as the ideal solutions. SiC diodes for solar are projected
to grow steadily through 2026, however, the SiC MOSFET segment is projected to grow
more than 40%from $82 million in 2021 to $103 million in 2026.
Table 3: Global SiC Market for Solar Power Systems

by Discrete Device, 2021-2026 (USD Million)
Reprinted with the permission of MarketsandMarkets 26
The North American SiC market was valued at $234.7 million in 2021, and is expected to
reach $538.9 million by 2026, growing at a CAGR of 18.1% from 2021 to 2026.27 The solar
power systems market is expected to grow from $27.3M in 2021 to $60.4 by 2026.
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Table 4: North American SiC Market by Application 2021-2026 (USD Million)
Reprinted with permission of MarketsandMarkets 28
2.3 Market Drivers
MarketsandMarkets identifies the following market drivers: 29
1. Power electronics continues to evolve as it is the key enabler for solving

the future electricity demands. Emerging applications include renewable
energy generation, such as solar (mainly photovoltaics); and electrified
automobile systems including electric vehicles, trains, and buses; charging
infrastructure; uninterruptible power supplies; and motor drives.
2. The market has seen continuous developments in the fabrication of SiC
semiconductor power devices such as power MOSFETs, and other discrete
devices.
3. New opportunities for innovative designs have resulted from progress
made in SiC device technologies as well as advanced manufacturing and
packaging techniques, which has enabled higher efficiency, higher power
density, and improved equipment reliability.
Research institutions are conducting research in SiC advancements for solar power
development. For example, in 2021, Germany’s Fraunhofer Institute for Solar Energy
Systems reported it had successfully developed a 250-kW SiC inverter that can be used
in utility-scale PV projects. Compared to a standard PV inverter using silicon transistors,
the SiC inverter eliminates the need for a 50 Hz.
13
2.4 Market Barriers
Although SiC has gone beyond the period when SiC power devices were deemed as the
“next-generation devices”, the number of applications continues to increase. However,
barriers to the widespread adoption of SiC power electronics, especially in applications
such as solar, remain. Yole identifies various market barriers including: “SiC transistors
still have some technical and commercial challenges to face, despite the value they add.
These include the wafer price and the complexity of some process steps, specifically SiC
etching and high temperature implantation. These challenges still hinder SiC adoption on
a large commercial scale.” 30 The following table summarizes barriers seen by various
sources.
Table 5: SiC Power Electronics Barriers
Barrier Description
Cost “Over the past 10-20 years, the main challenges of SiC have shifted significantly from
performance (demonstrating clear advantages over Si devices), to reliability (passing
industrial and automotive qualification, identifying, and mitigating special failure
modes), to cost (from serving a niche market to achieving cost-effectiveness for a wide
range of applications). At this time, cost is the main remaining barrier for many potential
applications that could have adopted SiC to improve system performance and power
density. But this is getting better every year, especially after SiC has proven to offer
great system value for EV power converters (onboard chargers and traction inverters).
As global market demand increases rapidly, SiC device production efficiency is vastly
improved through larger wafer diameters and other supply chain advantages. This
momentum will eventually enable SiC to overtake Si for 600V+ power devices in a much
wider application space, step by step.”31
High cost of Substrate materials used in fabrication of SiC semiconductors are expensive unlike
substrates silicon. Hence, the challenge here is to develop a commercially viable foundry model for
high volume processing of wafer substrates for WBG semiconductors.32
Slow growth According to GT Advanced Technologies, a SiC crystal grower, “Differences in the
rates and processes used for SiC and silicon boule growth are behind differences in the cost,
limitations to size, and availability of substrates. For silicon, ingots produced in state-of-the-art
crystal size crystal growth equipment have a diameter of 450 mm and a length exceeding 2 m and
are realized at a growth rate of around 100 mm/hour. Growth is initiated using a thin
seed with a 10 mm by 10 mm cross section. In contrast, SiC crystals are grown with a
diameter of 150 mm, and have a length up to 50 mm, with growth proceeding far more
slowly – it occurs at 100-300 µm/hour. This process begins with a starting seed that
has a diameter of 150 mm or more and a thickness of 1-2 mm.”33
Manufactur- One of the biggest challenges of widespread adoption of SiC devices is due to higher
ing issues manufacturing process cost and a lack of volume production. “Mass production of SiC
devices imposes challenges that require a robust and well-thought-out infrastructure
and manufacturing processes. This includes wafer testing, which requires the test of
smaller devices that work at higher current and voltage ranges.”34
14
Barrier Description
Quality of GT Advanced Technologies has publicly reported that, “the quality of SiC lags behind that
SiC Crystals of silicon. The latter can be grown free of defects, while SiC suffers from fundamental
issues associated with vapor-phase growth, multiple polytypes and a spiral growth
mechanism. Part of the problem is that the stacking fault energy needed for the atoms
to migrate to, and sit in, the right place is far lower in SiC than silicon. This introduces
a wide range of defects, including micropipes, carbon inclusions, and extended crystal
defects, such as threading screw dislocations, threading edge dislocations, basal planar
defects and stacking faults. Mitigating these defects is not easy, requiring a combination
of equipment expertise and process knowhow. Just one without the other is insufﬁcient
for delivering the results demanded by high-growth markets.”35
Production With demand for SiC-based power electronics increasing, limited SiC production capacity
Capacity could be a barrier to entry for players considering entering the market.36 However, progress
is being made regarding the wafer quality of silicon carbide. In the current scenario, SiC
wafers are manufactured in 100 mm and 150 mm, with 200-mm SiC wafers expected to
penetrate the market in the future.37
Processing SiC is not available as a natural mineral processing costs have remained high given that
Costs SiC doping is a difficult process, resulting in challenges in producing larger SiC wafers
with fewer defects.38
Defects SiC-based inverters are known for having higher power density, less need for cooling and
lower overall system costs than traditional inverters.39 Defects at the interface between
the SiC and the insulating silicon dioxide material still represent a big hurdle to bringing
the technology to mass production. For example, in 2019, Fraunhofer Institute for Solar
Energy Systems scientists found evidence indicating the defects affecting the heat
resistance of SiCs are attributable to “nanometer-sized carbon clusters which are formed
during the oxidation of silicon carbide to silicon dioxide under high temperatures.”40
According to the study, “although SiC offers great potential for reducing weight and
improving the electric conductivity and thermal properties in next generation solar
inverters, the defects studied – which occur at the interface between silicon carbide and
the insulating material silicon dioxide – are considered a major obstacle to commercial
adoption. Inverter makers have thus far developed silicon carbide devices only as
prototypes or in small-scale production runs.”41
Design and Orlando Esparza, strategic marketing manager for the Discrete and Power Management
Integration business unit at Microchip Technology, identifies design and integration issues,42
issues
“SiC power devices are not commoditized, and there are real differences in performance,
reliability, and ruggedness. It is unlikely that the lowest-cost devices will satisfy the
high-reliability requirements for mission-critical applications given the various design,
development, and manufacturing [circumstances] from different vendors. Designers
need to ensure they carefully evaluate — on their own bench and systems — device
performance, reliability, and degradation in performance under stringent conditions.”43
The “complex design and integration process” is a restraint for the overall power
electronics market. The players “operating in the power electronics industry are focusing
on integrating multiple functionalities in a single chip, which results in complex designing.
The designing and integration of complex devices require special skillsets, robust
methodology, and toolset, which increase the overall cost of the devices. The high cost of
the devices is expected to hamper the switching process toward advanced technological
devices.”44
15
Barrier Description
Cost of SiC cost is often cited by both academia and industry as one of the largest barriers
SIC vs to overcome. The issue of cost is discussed below by semiconductors leaders
Competition (STMicroelectronics, ON-Semiconductor and ROHM Semiconductor) in April 2019:45
“STMicroelectronics: ST is among the few suppliers of SiC devices and the only one
with automotive grade SiC in production. From this, it’s easy to see that the biggest
inhibitor to the growth of SiC today is capacity. As the industry addresses its capacity
limitations — and you may recall that ST announced a supply agreement for SiC wafers
with Wolfspeed in January, we announced the acquisition of a majority stake in wafer-
manufacturer Norstel, and we’re expanding our SiC manufacturing capacity. All of
these efforts are consistent with our goal of sustaining an important share of the SiC
market into the future.
Toshiba Electronic Devices & Storage Corporation: The cost of Silicon Carbide
semiconductors is still higher than that of Silicon ones. We continue to develop
technologies for reducing the production cost – for improving its yield rate, for example.
onsemi : SiC is now well proven across multiple market segments and applications.
Although there are always new applications with associated reliability and design
challenges, how to appropriately incorporate SiC into new systems and platforms
is well understood. The biggest factor hindering growth is cost. Today SiC provides
savings at the system level with the electric vehicle transformation creating a catalyst
for dramatic growth over the next 3-5 years. However, even greater growth will be
realized when SiC can be provided with a lower cost than silicon based IGBTs at the
device level. In order for this to occur, sub $500 SiC substrate costs must be achieved
which could potentially occur within the next 3-years.”
Wafer Cost In a presentation dated May 7, 2020, Infineon’s Peter Mawr (President, Industrial Power
Control) and Peter Friedrichs (Silicon Carbide Senor Director) indicated that SiC raw
wafer remains a cost driver.
1.
Source: Infineon. “Industrial Power Control Business Update.” (May 7, 2020).46
According to “PowerAmerica’s Strategic Roadmap for Next Generation Wide Bandgap

Power Electronics,” the future is promising for wide bandgap power electronic technologies.
Driving adoption of WBG power electronics are SiC and GaN’s proven technical advantages
over Si, as well as decreasing prices.47 Power America has more than 35 members,
including large companies whose focus is SiC such as Wolfspeed, Infineon, and XFAB.48
The PowerAmerica Roadmap identifies the following four challenges that need to be
overcome in order to advance SiC and GaN technologies for power electronics:49
16
1. Reducing cost
2. Improving reliability
3. Enhancing performance capabilities
4. Strengthening the power electronics ecosystem—are intimately connected
to form an integrated, collaborative strategy.
Table 6: Power America - SiC Power Electronics for Energy Challenges
Application Challenge
1.2-1.7kV: PV string inverter, traction (e.g., EV/ • High cost

PHEV and rail), grid-tied energy storage, heavy-
duty vehicles, electric aircraft, industrial motor
drive, circuit protection.
1.2-1.7kV: PV string inverter, traction (e.g., EV/ • Lack of good reliability testing data that
PHEV and rail), grid-tied energy storage, heavy- demonstrates device performance in different
duty vehicles, electric aircraft, industrial motor situations over long periods of time
1.2-1.7kV: PV string inverter, traction (e.g., EV/ • Need for AEC-like qualifications, short circuit
PHEV and rail), grid-tied energy storage, heavy- rating, and/or optimized gate driver.
duty vehicles, electric aircraft, industrial motor • Lack of good high-temperature packaging (e.g.,
drive, circuit protection for down hole)
• Need for package standardization with dual
sourcing.
• Need for reduced parasites
1.2-1.7kV: PV string inverter, traction (e.g., EV/
PHEV and rail), grid-tied energy storage, heavy- • Need for improved material quality for 100-
duty vehicles, electric aircraft, industrial motor 200A single chips
Source: Power America, Inc. “PowerAmerica Strategic Roadmap for Next Generation
Wide Bandgap Power Electronics.” (February 2018).50
2.5 SiC Device Manufacturers
There are nearly two-dozen SiC device suppliers that compete in this market. SiC chip
production is currently split among the United States, Japan, China, and Europe. Suppliers
of SiC devices include Fuji Electric, Infineon, onsemi, STMicroelectronics, Rohm, and
Wolfspeed / Wolfspeed.51 Other SiC device manufacturers in the US include:52
• Littelfuse
• Microchip
• GeneSiC Semiconductor, Inc.
• United Silicon (UnitedSiC)
17
Device makers sell SiC power MOSFETs and diodes, which are used in 600-volt to 10-kilovolt
applications. SiC power module manufacturing and manufacturing of power modules
in general currently fall into two categories: 1) vertically integrated approaches,
where companies have in-house manufacturing facilities, particularly in cases where
highly customized modules are required; and 2) the use of contract manufacturers.
Vertically integrated companies include Infineon Technologies AG (Munich, Germany),
Wolfspeed, Inc. (Durham, NC), ROHM Co., Ltd. (Kyoto, Japan), STMicroelectronics
N.V. (Geneva, Switzerland), and Fuji Electric Co., Ltd. (Tokyo, Japan) are involved at
this stage.53Other supplies using contract facilities includes suppliers include ABB,
GeneSiC, Global Power, Microchip, Monolith, and UnitedSiC. For example, UnitedSiC is
a fabless SiC device supplier.54
2.6 Movement Toward Vertical Integration is Shaping the Landscape
Companies including STMicroelectronics, Wolfspeed, onsemi, and Infineon Technologies,

announced their revenue objectives for SiC that includes an integrated device manufacturer
(IDM) business model.1 The IDM business model is the one chosen by leading players to
supply devices, especially power modules.
Table 7: Companies with Integrated Device Manufacturer Model
onsemi SiC modules contain SiC MOSFETs and SiC diodes. onsemi intro-
duced a pair of1200 V SiC MOSFET2-PACK modules for the EV mar-
ket.
Infineon AG Silicon carbide MOSFET; MOSFET Discrete; MOSFET
Modules; SiC Schottky Diode; CoolSiC Hybrid Modules; SiC
Diodes; and SiC Transistors
Wolfspeed, Inc. SiC MOSFETs; SiC Schottky Diodes; SiC Power Modules;
SiC Substrates; and SiC Epitaxy
Rohm Co., Ltd. SiC Schottky Barrier Diodes (SBDs); SiC MOSFET; SiC Power
Modules; SiC Schottky Barrier Diodes Bare Die; and SiC MOSFET
Bare Die
STMicroelectronics NV SiC Diodes; Automotive SiC Diodes; Automotive grade SiC Diodes;
SiC Schottky Diodes; and SiC Power MOSFETs
FUJI Electric SiC Devices SiC Schottky-Barrier Diodes; SiC Modules; and
Hybrid SiC Modules
Major SiC players are migrating along the supply chain toward the module level with
STMicroelectronics having the largest share of SiC power devices market.
1 An integrated device manufacturer (IDM) is a large-scale semiconductor company that designs,

manufactures and sells integrated circuit products.
18
MISTUBISHI 2%
ONSEMI 7%
ROHM 10%
WOLFSPEED 14%
INFINEON 22%
ST MICRO 40%
0% 5% 10% 15% 20% 25% 30% 35% 40% 45%
Figure 6: SiC power devices market share of key players

Source: Infineon AG. (May 11, 2022).55
3.0 Silicon Carbide and Photovoltaics

This section provides an overview of the different types of inverters used in solar
applications and introduces companies that are using SiC devices in solar applications.
Also included is a discussion of the overall inverter market.
3.1 Solar Inverters
Inverters account for about 5% of total solar PV system costs. Growth of the solar PV
inverter market is directly proportional to the increase in solar PV power installments. As
noted previously, the SiC market is being driven by both PV and electric vehicles. Frost
& Sullivan forecast a total of $2 billion to be invested in solar PV through 2030, with half
going to utility-scale projects and the rest going to commercial, industrial, and residential
PV systems. Frost & Sullivan believe project costs will continue to decline during the
forecast period, 2020-2030. In tandem, technology costs will also continue to decline
although costs will decrease more slowly than during the last decade (2010-2020).56
Innovations in solar are also occurring in siting and location of the solar panels. Land
scarcity, country-level carbon neutrality targets and falling prices are expected to
contribute to the growth. Dual use examples include:
1. The deployment of rooftop solar PV systems has increased significantly in

recent years. Rooftop solar PV market is expected to reach $124.36 Billion
by 2028, growing at a CAGR of 6.01% between 2021 and 2028.57
2. Floating solar is promising, representing ~1% of global solar demand in
2021.58 The market, estimated at 1.6 thousand MW in 2021 is projected
to reach 4.8 thousand MW by 2026. China is expected to dominate floating
solar installations over the next five years, with India and South Korea trailing
close behind.59
19
3. Interest is rising around dual use solar or agrivoltaics, the simultaneous
use of land both for crop production as well as energy production using
photovoltaics.60
3.1.1 Types of Inverters
There are three primary types of solar inverters: (1) Central inverters which are used in
large scale installations and large commercial buildings; (2) String inverters – used in
medium-sized installations such as commercial and residential establishments; and (3)
microinverters which are mostly used in residential installations with some installations
in the commercial field.61
Figure 8: Inverters Market Segmentation.

Reprinted with the permission of Frost & Sullivan.62
Each inverter type has its own unique distribution setup as follows: 63
• Central inverters are usually not held in stock by most manufacturers and
are built to order for customers. The main distribution channel for central
inverters is direct sales as these devices need to be customized as per
project requirements.
• String Inverters are more standardized/commoditized products and
can be held in stock. Manufacturers rely heavily on distributors for the
sale of string inverters and microinverters due to the standardized nature
of these products. System integrators and engineering, procurement and
construction firms are other important distribution channels for string
inverters used in large-scale projects.
20
• Microinverters are sold mostly through direct sales. Sales through online
portals contribute to the sale of microinverters. In addition, manufacturers
of solar PV inverters also sell to solar module manufacturers who bundle
inverters with their modules to sell as complete solar PV solutions.
With string inverters, the benefit of SiC is greater because weight, and volume are much
more important than in the central inverter. Currently, SiC devices for solar inverters are
still expensive, but they have other advantages:64
Although the SiC MOSFET unit cost is generally not yet lower than that of an IGBT
for similar headline ratings, system hardware costs are lower due to maintained high
efficiency at higher switching frequencies. This allows smaller and cheaper magnetic
components and heat sinks to be implemented.
Although a “switch from IGBTs to SiC MOSFETs is a net system benefit at increasing
power level,” this should not be considered as a “a simple swap-out” and “will not give
good results – optimum performance requires a re-evaluation of gate drive arrangements,
layout and EMI filtering.”65
3.3 SiC Inverters for PV
SiC devices can replace existing silicon switching technologies, enabling designers to
achieve significantly better performance in applications such as solar inverters, EV on-
board chargers, server power supply units, telecoms, as well as uninterruptible power
supplies.66 SiC as a semiconductor performs better than Si when it comes to a mix of high
power and higher switching frequencies. This is especially the case for the conversion from
DC to DC in inverters, where it creates a significant advantage. By eliminating switching
losses for example, a SIC inverter is able to achieve higher switching frequencies without
increasing semiconductor losses and hence temperatures.67 Another advantage is its
current handling ability at higher voltage levels.
SiC devices can enable 98% efficiency in solar power systems. Beyond increased
efficiency, research has shown that using SiC power components instead of Si for solar
inverters enables solar inverters to be lighter, smaller, and more efficient. It can save 10
megawatts for each gigawatt, and 500 watts/sec in operations, which leads to significant
energy savings. These benefits can be used for a wide range of applications from utility-
scale solar to residential solar panels.68
SiC inverters can improve the efficiency of the grid-tie, shrink the cooling system, and
reduce overall system costs. String solar inverters are expected to benefit from SiC:
“The rise in the use of string inverters in large solar plants has been another critical
factor. … as installations moved from small installations towards enormous plants
reaching the gigawatt range, so did the philosophy; from central inverters towards
string inverters. With string inverters, the benefit of SiC is even bigger because
weight, and volume are much more important than in the central inverter – basically
because you need somebody to install it. And if you are below a certain weight for
21
the PV inverter, you can do it by one or two people. To achieve the same power
rating with silicon in the newest inverters would double the weight. It’s a simple
driving post to use SiC in PV string inverters.”69
The next big thing for SiC in solar is predicted to be in storage:70
“The next big SiC use case will be in storage, where efficiency improvements can
reduce the necessary size of a battery, both in residential and larger installations. In
every PV system now you have storage, and in the storage system, you can save with
the higher efficiency enabled by SiC. Between the panels and battery, you need a
DC-DC stage, and you usually have different voltage levels, and you need to convert
what comes out of the panel.”
Frost & Sullivan expects inverters with SiC/GaN switching devices, 210 mm module
compatible inverters, 1,500 V inverters, and string inverters to gain traction. Several points
should be noted:71
• Utility-scale 210 mm modules starting from 550 W capacities offer several

benefits, including reduced project costs, due to reduced foundations for
installation and fewer trackers and cables. In tandem, the leading PV inverter
suppliers have announced production of inverters that are compatible with 210
mm modules.
• Inverters with 1,500 V minimize capital expenditures and operating expenses
by reducing labor and, thereby, decreasing levelized cost of electricity and
improving return on investment. They enable longer strings and require fewer
combiner boxes and less wiring and trenching, which effectively closes the
price gap with central inverters. Frost & Sullivan believe that 1,500 V will reduce
system losses at the direct current end, and these systems are poised to garner
a major share in the global market. The market is shifting toward string inverters.
Decision makers prefer modular, highly reliable string inverters over central
inverters, which were the conventional choice for large-scale PV systems. The
inverter industry is also shifting to SiC/GaN converters for improved conversion
efficiency. Significant cost pressures and competition have resulted in the
consolidation of the inverters market during recent years.
• While many countries produce PV inverters, such as Japan, South Korea,
Australia, the United States, Canada, Germany, Spain, Austria, Switzerland, Italy
and Thailand, China is the leading supplier with more than 60% (approximately
75 GW) of the global PV inverter market share.
There have been some interesting announcements with respect to SiC solar inverters. For
instance, in 2021, Germany’s Fraunhofer Institute for Solar Energy Systems showcased a
250-kW SiC inverter that can be used in utility-scale PV projects for medium-voltage grid.
“The inverter runs at 98.4% efficiency and can be installed in a modular interconnection
of multiple inverter stacks, which makes it ideal, according to its creators, for the
deployment of systems at megawatt scale.”72
22
3.4 SiC Device-based Solar Inverter Manufacturers
The demand for SiC components is increasing for renewable energy applications, especially
for solar power. Several manufacturers are developing SiC devices compatible with solar
energy applications. For instance, Hillcrest Energy Technologies achieved proof of concept
for the Hillcrest ZVS inverter in 2022. By eliminating switching losses, the company was
able to achieve higher switching frequencies without increasing semiconductor losses.73
Table 8 provides examples of SiC-based devices for solar currently on the market.
Table 8: Summary of Selected SiC-based Devices for Solar Applications
Developer / Location / Device /

Remarks
Manufacturer Manufacturing Trade Name
onsemi onsemi has 5 200V silicon The 1200V devices are

manufacturing carbideSiC rated at up to103 A
locations in the MOSFETs (ID Max.), while 900V
U.S. SiC epiwafers devicescarry ratings as
are manufactured high as 118 A.75
at the Maine
Manufacturing
Facility (85k sq.
ft of clean room
space, located on
a 20-acre campus
with 371k sq. ft of
building)74
23
onsemi Designs and 900V N-channel onsemi markets a range
manufactures SiCMOSFETs ofSiC devices for solar
semiconductor converters including:77
chips, sensors, 900V N-channel
power management SiCMOSFETs • Discrete MOSFETs
devices and and diodes ina
other electronic variety of packages
components at for flexibility
20 sites, most in
the Asia-Pacific • Hybrid IGBTs
region.76 with a SiC
freewheel
diode
for cost
optimization.
• SiC Hybrid modules

and full SiCmodules
for compact
designs.
In July 2020,
onsemi introduced
NXH40B120MNQ family
of full SiC power modules
integrate a 1200V, 40mΩ
SiC MOSFET and 1200V,
40 A SiC boost diode with
dual boost stage.
GeneSiC Dulles, VA 1700V 450mΩ Devices are available from
Semiconductor TO-247-3 SiC the followingdistributors:
MOSFET
• Digi-Key Electronics
50V G3R™SiC
• Newark Farnell
MOSFETs 1700V
450mΩ TO-263-7 • Mouser Electronics
SiC MOSFET 78
• Arrow Electronics
1700V 450mΩ
TO-247-3 SiC
MOSFET 50V
G3R™SiC
MOSFETs
1700V 450mΩ TO-

263-7 SiC MOSFET 79
24
Infineon Germany TRENCHSTOPIGBT CoolSiC MOSFETs 650V
Technologies and a Cool SiC devices that are rated from
AG MOSFET 27 mΩ to 107 mΩ, which
the company states have
usefulness in telecom,
industrial, EV, and solar
powerapplications, among
others. The Active Neutral-
Point Clamped topology
allows system voltages
up to 1500V maximumto
be switched with switches
designed for 1200V.80
Wolfspeed, Inc. Durham, NC Various products Wolfspeed (formerly
including 650V Wolfspeed Inc.) is a public
SiC MOSFET company and operates in
the Asia-Pacific, Europe-
an and North American
regions.
Rohm Kyoto (Japan) SiC power module ROHM Semiconductor’s
Semiconductor portfolio with the primary products
addition of new comprise discrete
1200V/400A & 600A semiconductors, ICs,
models. modules, opto-devices,
commercial products,
and passive and power
devices.
United Silicon Monmouth Junction, UF3C family of 650 V UnitedSiC was founded
Carbide, Inc. NJ and 1200V SiC FETs in 1997. The company
Alow RDS(on) for solar develops silicon carbide
power inverters. 81 FETand diode power
semiconductors. Products
that UnitedSiC offers
includes:SiC FETs, SiC
JFETs, and SiC Schottky
Diodes.
Littelfuse, Inc. Chicago, IL 1200V silicon carbide In March 2018 1200V SiC
Schottky diodes MOSFETs was introduced
series
Microchip Chandler, AZ Products include Microchip through its
Technology 700-V and 1,200-V Microsemi division offers
Incorporated SiC Schottky barrier a comprehensive product
diodes and 700-V portfolio.
SiCMOSFETs.82
25
Toshiba Tokyo, Japan Toshiba provides MG800FXF2YMS3, a SiC
Electronic a range of SiC MOSFET module integrating
Devices & power device lineup a developed dual channel SiC
Storage including1200V SiC MOSFET chips with ratings
Corporation MOSFETs, 650-V of 3300V and 800A designed
SiC Schottky Barrier for industrial and renewable
diodes and SiC energy applications was
MOSFET Modules.83 recently introduced. Volume
production started in May
2021.84
3.5 Bill of Materials – SiC Solar Inverters
Cost information for SiC Solar inverters on the basis of volume is documented in the
research paper by Akanksha Singh, Samantha Reese, and Sertac Akar (National Renewable
Energy Laboratory), “Performance and Techno-Economic Evaluation of a Three-Phase,
50-kW SiC-Based PV Inverter.” Benchmark commercial system cost was calculated for
the U.S. Department of Energy Solar Energy Technologies Office’s SunShot program.85
According to the authors, the main driver in the manufacturing cost is economies of scale
from parts procurement.
Figure 9: Modeled factory gate pricing of Alpha SiC inverter

Source: Akanksha Singh et al. (National Renewable Energy Laboratory).86
26
In Table 9 below, the individual inverter parts are all treated as purchased parts in the
model except for the power block made from SiC devices.
Table 9: 50kW SiC Inverter Bill of Materials
50kW SiC Inverter
$/Watt % Total
Module $0.35 16%

Inverter $0.19 9%
Structural BOS $0.15 7%
Electrical BOS $0.20 9%
Install Labor & Equipment $0.26 12%
EPC Overhead $0.22 10%
PII $0.17 8%
Sales Tax $0.05 3%
Contingency % $0.05 2%
Developer Overhead $0.40 18%
EPPC/Developer Net Profit $0.14 6%
∑ Total Cost $2.17
Source: Akanksha Singh et al. (National Renewable Energy Laboratory).87
Figure 10 presents the minimum sustainable price for the NREL-developed 50-kW SiC
Gamma inverter using the cost of power blocks with current die pricing. The Gamma
inverter used 1700-V SiC devices. The 10,000 per year manufacturing level yields an
inverter price of $9,457/inverter. This translates to a $0.19/W price point. The researchers
determined the majority of the cost is in the wafer.
27
Figure 10: Modeled factory gate pricing of Gamma SiC inverter using current die pricing.
Source: Akanksha Singh et al. (National Renewable Energy Laboratory, 2017).88
Kelsey Horowitz, et al. of NREL modeled the minimum sustainable price of each SiC
component per variable frequency drive.89 Table X below shows the minimum sustainable
price per component.
Table 10: Minimum Sustainable Price of Each SiC
Component Per Variable Frequency Drive
Raw Materials NA
Wafers $1,598
Chips $3,594
Modules $13,109
Variable Frequency Drive $176,355
Source: Akanksha Singh et al. (National Renewable Energy Laboratory, 2017).90
28
3.6 Global Inverter Market
The global inverter market is projected to reach $33.8 billion by 2027 from an estimated
$16.3 billion in 2022, at a CAGR of 15.7% during the five years 2022–2027.91 The market
is made up of mostly Si-based inverters with the solar inverter segment projected to
account for the highest share of 65.5% in 2022. The trend is expected to continue during
the forecast period due to the increasing demand for inverters in solar PV plants and the
residential and commercial sectors. 92
Table 11: Global Inverter Market, by Type, 2020 and 2027 (USD Million)
Reprinted with permission of MarketsandMarkets.93
The string inverter type is projected to reach $7,921 million by 2027, increasing from an
estimated $3,391 million in 2022, at a CAGR of 16.1% between 2022-2027.
Table 12: Global Solar Inverter Market, by Type, 2020 – 2027 (USD Million)
29
Inverters are sold in various power ranges including: <10 kW, 10–50 kW, 50–100 kW and
>100 kW. These power ranges address the needs of the residential, commercial, and utility
segments of the solar inverter market (Table 13). The <10 kW segment accounted for the
largest share (~35%) of the inverter market in 2021. Inverters with output power ratings
below 10 kW are suitable for use in the residential and commercial sectors. Installation
of solar PV systems in the residential sector is increasing significantly worldwide. Apart
from residential inverters, string inverters, micro-inverters, and vehicle inverters also have
an output voltage rating below 10 kW.32
Table 13: Global Inverter Market, by Output Power Rating, 2020 – 2027 (USD Million)
North America held a 26.5% share of the global inverter market in 2021. The US is one of
the major contributors to the market growth in this region. North America includes the
United States, Canada, and Mexico in this report.
Table 14: North America Inverter Market, by Type 2020 – 2027 (USD Million)
30
3.6.1 Solar PV Key Suppliers
The figure below shows the solar PV key suppliers. Inverter supplies are for the most part,
non-United States based companies.
Figure 11: Players in the PV Value Chain

The global competitive landscape for inverters remains relatively consolidated. The
major players in the inverter market are Huawei Technologies (China), Sungrow Power
Supply (China), SMA Solar Technology (Germany), Power Electronics (Spain), FIMER
(Italy), SolarEdge Technologies (Israel), Fronius International (Austria), Altenergy Power
System (U.S.), Enphase Energy (U.S.), Darfon Electronics Corporation (China), Schneider
Electric (France). The top 10 suppliers accounted for more than 70% of global PV inverter
shipments. The increasing focus on the use of renewable power sources across the globe
is driving the market for power electronics for renewable energy applications.98
31
Figure 12: Solar Inverter Manufacturers Market Share
Reprinted with permission of Frost & Sulivan.99
4.0 Silicon Carbide Supply Chain and Key Players
In this section, an overview is provided of the current supply chain and key SiC chip
manufacturers. The silicon carbide value chain is made up of companies at each point
in the chain, namely: (1) material suppliers (2) SiC crystal growers (boule); (3) wafer
manufacturers and (4) device manufacturers.
4.1 Supply Chain
Silicon carbide is rarely found in nature and, therefore, it is more commonly produced
synthetically. Figure 13 illustrates the production steps, starting at crystal growth and
ending up as devices and circuits.
32
Figure 13: Steps Involved in Making SiC
Source: GT Advanced Technologies. (September 2019).100
“The SiC substrate production starts with silicon and carbon materials, which are inserted
in a crucible. In the crucible, a boule is formed and then sliced into SiC substrates. Following
the SiC wafer process, an epi layer is grown on the substrate. Then the wafer is processed in
the fab, resulting in a SiC device. In the SiC flow, a vendor obtains a SiC wafer, which is then
processed in a 100mm (4-inch), 150mm (6-inch) or 200 mm fab. This, in turn, creates a SiC
power device.”101 SiC for power electronics is ramping up and suppliers of SiC devices are
putting supply chain infrastructure in place to handle the anticipated aggressive forecast
ramp up.102
4.1.1 SiC Materials Suppliers
High purity SiC powder, which can be used to grow SiC boules, is available from a small
number of global suppliers, and is relatively expensive. SiC powder is used to grow SiC
boules. SiC powder is produced by large, multinational companies such as Dow Chemical
Co., (US) ESD-SIC b.v. (Netherlands), Carborundum Universal Limited (India), Saint Gobain
Ceramic Materials GmbH (Malvern, PA) and ESK-SIC GmbH (Germany).103
Another ingredient, high purity silane is a critical

precursor for growing SiC layers in chips and is High purity silane is a
typically produced by large, multinational industrial critical precursor for
gas companies such as Linde, Messer, REC Silicon,
growing SiC layers in chips
Air Liquide, Taiyo Nippon Sanso (Matheson), Air
Products, Henan Silane Technology, Shaanxi Non- and is typically produced
ferrous Tian Hong REC Silicon Materials, Shin-Etsu. by large, multinational
Firms headquartered in the United States, Asia (China, industrial gas companies.
Japan, Hong Kong, South Korea, and Taiwan), and
Europe (Germany and France).104
33
4.2 SiC Crystal Growers
The SiC supply chain still has some rough spots to iron out. This is partly due to reliability
issues that are yet to be fully solved, and partly due to volume manufacturing ramp-up
issues for any new material or changes in the size of wafers. A key challenge is to lower
the defectivity, or dislocations, and for SiC substrates this is trickier than for standard
silicon. Manufacturers have continued to increase SiC crystal quality.
Typically, companies that grow SiC boules also machine them into ingots and slice them
to create substrates. A few of the companies that manufacture ingots and substrates also
provide epi-layer growth and sell epi-wafers.105 The following companies are vertically
integrated from crystal growth through device manufacturing: SiCrystal (owned by Rohm
Semiconductor, German manufacturing), Nippon Steel (Japan), Norstel (Sweden), and
SICC (China). onsemi, Wolfspeed, ROHM, STMicroelectronics, II-VI and SK Siltron.
Wolfspeed is a vertically integrated company, growing SiC crystals, manufacture wafers,

and also supplies other SiC device competitors. With respect to growing SiC crystals,
Wolfspeed estimates that the company holds about 60% of the merchant market for
SiC crystals (they also grow SiC crystals for in house use).106 II-VI Advanced Materials is
another notable crystal grower, that probably has ~15% market share.107
Table 14: Notable U.S. SiC Crystal Growers
Company* Location(s) Description
Wolfspeed Durham NC Vertically integrated

Research Triangle Park
(Durham NC)
Mohawk Valley, NY
II-VI Advanced Materials Saxonburg, PA Manufactures crystals
and substrates
onsemi Has SiC manufacturing facility The company markets CrystX®
in Hudson, New Hampshire. SiC, form factor for the product is
150mm (6″) diameter. Resistivity
is 20 mΩ-cm ±5. Upon request,
this can be tuned to a 2 mΩ-cm
range.108
*Not an exhaustive list
Brief profiles of these two companies are provided in the next section.
4.2.1.1 onsemi Corporation / GT Advanced Technologies, Inc

In November 2021 onsemi, acquired GT Advanced Technologies, a SiC boule supplier
for $415 million. GT Advanced Technologies manufactures SiC crystals in its Hudson
34
Hampshire facility.109 onsemi is working on the expanding GTAT’s manufacturing facilities,
supporting research and development efforts to advance 150mm and 200mm SiC crystal
growth technology, while also investing in the broader SiC supply chain, including Fab
capacity and packaging.110 As listed in the following table, GT Advanced Technologies has
several SiC crystal supply agreements in place.
Table 15: GT Advanced Technologies – SiC Crystal Supply Agreements
Date Partner Description
November Infineon A supply agreement for SiC boules. The contract has an initial
2020 Technologies term of five years.111
March 2020 ON A five-year agreement valued at a potential of $50 million.
Semiconductor GTAT will produce and supply its CrystX™ SiC material to ON
Semiconductor. ON Semiconductor will use GTAT’s proprietary
150mm SiC crystal to make its SiC wafers.112
August 2019 GlobalWafers Co., Long-term agreement, GlobalWafers will add 150mm SiC to
Ltd. its offering, manufactured from bulk SiC crystal produced by
GTAT.113

4.2.1.2 II-VI, Inc
II-VI, Inc., located in Saxonburg, PA manufactures SiC substrates and is positioning itself
as a vertically integrated SiC player.114 In February 2022, II-VI demonstrated an automotive-
qualified 1200V silicon carbide MOSFET platform on its high quality SiC substrates. II-VI,
Inc. also extended its partnership with General Electric and signed a three-year access
agreement with GE Research.115 With this qualification, II-VI plans to ramp up activities for
devices in the industrial motor and renewable-energy markets, while in parallel, initiating
longer-term design-in activities in the electric vehicle market.116 Long term vision is to
invest $1 billion in capacity and innovation for its SiC platform over the next ten years
starting in 2022.117 In 2020, II-VI, Inc. made two acquisitions:118
• Ascatron AB (Kista, Stockholm, Sweden) – Ascatron produces SiC epitaxial

wafers and devices that enable a wide range of high-voltage power
electronics applications.
• INNOViON Corp (Colorado Springs, CO) – provides ion implantation
technology for silicon and compound semiconductor devices. “INNOViON
is said to be the world’s largest provider of ion implantation services, with 30
implanters across a global footprint supporting capabilities in semiconductor
materials processing for up to 300mm wafers. The firm’s processes enable
doping in a wide range of semiconductors, including silicon carbide, gallium
arsenide, indium phosphide and silicon.”
II-VI’s strategy is to secure new business in the growing SiC module market.119 In April
2021, the company expanded its silicon SiC wafer finishing manufacturing footprint in
China.120
35
In June 2020, II-VI licensed General Electric’s technology for manufacturing SiC devices and
modules for power electronics. II-VI “intends to remain focused on executing announced
plan to scale capacity of 150mm SiC materials by 5–10x while scaling volume production
of a differentiated 200mm materials technology to meet the anticipated growing demand
over the next five years.”121 II-VI has five manufacturing locations in the U.S.122 II-VI plans
to double capacity every 18–24 months through 2025.123
4.3 Silicon Carbide Wafers
Key silicon carbide wafer manufacturers include Rohm, Wolfspeed, onsemi, II-IV, SK
Siltron, KISAB, DISCO, Infineon, Soitec and others.
4.3.1 SiC Wafer Capacity Expansion Announcements
Among the top SiC device players, STMicroelectronics, Wolfspeed, Infineon Technologies
and onsemi have plans to increase capacity. Table X below provides a summary of planned
capacity increases. It is anticipated that considerable capacity will come online in 2022.124
Table 16: Global SiC Capacity Expansion
Company Expansion Finished
Wolfspeed 30x Capacity expansion 2022

STMicroelectronics 2.75X Capacity expansion 2022
NXP Semiconductor (100m investment) 2020
Rohm/SiCrystal 16x Capacity expansion 2025
Others
X-fab 26,000 wafer per month 2020
Clas-SiC Entered recently -
Episil Entered recently -
Sanan Entered recently -
Yes Power Technix Entered recently -
II-VI “Scale capacity of 150mm SiC 2025
materials by 5-10x while scaling
volume production of a differentiat-
ed 200mm materials technology to
meet the anticipated growing de-
mand over the next five years.”125
Source: Seeking Alpha. “Wolfspeed: The winner of EV adoption,

but too many uncertainties.” (November 30, 2020).
36
4.3.1.1 X-Fab Texas, Inc. – An Example of a US Fab
The X-FAB Silicon Foundries is a German group of semiconductor foundries, with

headquarters in Erfurt (Germany) and a foundry in Lubbock, Texas. X-FAB is a pure-
play foundry that provide processing technologies for WBG materials, SiC and GaN. The
company offers foundry services using the existing silicon manufacturing lines:126
• Processing GaN-on-Si wafers in the 8” fab in Dresden, Germany

• SiC wafers in 6” fab in Lubbock, Texas.
X-FAB has positioned itself as the first foundry to offer high-volume manufacturing to
meet the growing SiC demands. In 2020, the company added SiC epitaxy capabilities to
its offering. X-FAB also announced its intention to expand its SiC capacity and, with the
26k wafers per month capacity at its Lubbock facility, can meet its customers’ needs.127
Working with PowerAmerica, X-Fab devised process kits and other technologies for
making SiC devices. The X-Fab foundry operates under a collaborative model, providing
companies that lack their own silicon carbide fabrication capabilities with access to a
shared production and R&D facility.128 For example, UnitedSiC has its 150mm products
made by X-Fab. It also uses an undisclosed vendor for 100mm capacity.129
4.3.2 Progress to 8” Wafers
With SiC wafer as the basis for SiC devices, the industry has been working on the supply
by expanding wafer capacity. However, there are still many issues to solve in order to have
high-quality wafers and to further improve the challenges of yield loss. Companies are
working on ways to solve these issues.
Major wafer suppliers are manufacturing 8” wafers. As of July 2022, 8” wafers have
been qualified. 8” SiC wafers are considered as the critical step to scaling up production.
The objective is to increase yield. Major IDMs are developing their own manufacturing
capability of 8” SiC wafers; already, some wafer suppliers are shipping samples as of
2022.
• In March 2022, Tokyo-based wafer manufacturer Showa Denko K.K. launched

the mass production of 6-inch (150mm)-diameter SiC single-crystal wafers,
for processing into SiC epitaxial wafers for power semiconductor devices
as demand rises rapidly in fields including electric vehicles, railcars, and
industrial equipment.130 And in May 2022, Showa Denko was funded by the
Japan’s New Energy and Industrial Technology Development Organization
for its 8-inch SiC wafer development project.131
• In July 2021, STMicroelectronics announced it has manufactured the
first 200mm (8-inch) SiC bulk wafers for prototyping next-generation
power devices from its facility in Norrköping, Sweden. “ST’s initial 200mm
SiC wafers are also very high quality, with minimal yield-impacting and
crystal-dislocation defects. The low defectivity was achieved by building
on know-how and expertise in SiC ingot growth technology developed by
STMicroelectronics Silicon Carbide A.B.”132
37
• In April 2022, Wolfspeed opened its 200mm SiC fab in Marcy, N.Y.133
• Another vertically integrated semiconductor manufacturer, Rohm opened
Apollo fab in Japan in 2021.134 The fab also begun 200mm wafer based SiC
power chip evaluation. The company is aiming to begin mass production of
SiC power chips in 2024. It is aiming for a global market share of 30%.
• Infineon Technologies is spending over €2 billion to expand its capacity for
and GAN power chips, converting its 200mm and 150mm silicon lines in
Villach to these wide bandgaps and adding a third fab at its site in Malaysia.
Infineon also opened its 300mm power chip fab at Austria in September
2021.135 Infineon is targeting revenues of $1billion with SiC-based power
semiconductors by the middle of the decade.136
4.3.3 Innovations in SiC Wafer Manufacturing
SiC raw wafer cost represents more than 60% of the epi-wafer cost for 1200V SiC
MOSFETs. Even though SiC wafer capacity has been expanding, there is a strong
motivation for improving quality, throughput, and reducing cost. Some of the solutions
proposed to improve the quality include new wafer manufacturing processes, and the
new format of SiC wafers. For example, to produce uniform wafers with the high quality
surfaces, Applied Materials has developed the Mirra Durum CMP system, which integrates
polishing, measurement of material removal, cleaning and drying in a single system. “The
new system has demonstrated a 50X reduction in finished wafer surface roughness
as compared with mechanically grinded SiC wafers and a 3X reduction in roughness
compared to batch CMP processing systems.”137
To optimize the wafer manufacturing process and thus produce more wafers from one
single SiC boule is another approach. Equipment suppliers such as DISCO Corporation
(Tokyo, Japan) has developed a laser cutting system to increase the SiC wafer throughput.
The laser wafer slicing method called key amorphous-black repetitive absorption achieves
high-speed production of SiC wafers. “The process increases the number of wafers
produced from a single ingot, and dramatically improves productivity.”138
In 2018, Infineon acquired Siltectra GmbH, a start-up (Dresden Germany) bringing Cold
Split technology into its fold. Siltectra developed the Cold Split, which processes crystal
material efficiently and with minimal loss of material. Using the Cold Split technology to
split SiC wafers doubles the number of chips out of one wafer.139 Infineon Technologies
has qualified their Cold Split technology.140
38
Figure 12: Infineon Cold Split technology
Source: Infineon. (2021).141
Soitec uses their Smart Cut technology to produce SiC wafer with a thin layer with a lower
defect rate and a handle wafer with lower resistivity. “Smart Cut™ technology makes use
of both implantation of light ions and wafer bonding to define and transfer a thin single-
crystal layer from one substrate to another. It works like an atomic scalpel and allows to
generate active layers of our structures independently from the supporting mechanical
substrate, and its optional functional layers that can be inserted in the stack.”142
4.3.4 Key Players
The SiC foundry business is still small. There are two types of SiC wafer suppliers — (1)
vertically integrated and (2) third party:143
• Wolfspeed, STMicroelectonics and Rohm are vertically integrated.

Wolfspeed not only supplies SiC wafers for its own power semiconductors,
but it also sells them to others. Rohm sells power devices and has an
internal SiC wafer manufacturing unit.
• Infineon and STMicroelectronics have signed long-term wafer supply
agreements with Wolfspeed.
• STMicroelectronics acquired a majority share in Norstel AB (Sweden),
a supplier of SiC wafers.
• Third-party foundry vendors are entering or expanding their efforts the SiC
market, including II-VI (U.S.), Showa Denko K.K., and Sumitomo (Japan).
39
• SK Siltron acquired DuPont’s Silicon Carbide Wafer (SiC Wafer) unit in
March 2020. The primary site for the business is in Auburn, Michigan.144 In
February 2021, SK Siltron started to produce a small amount of SiC wafers
in South Korea. SK Siltron acquired DuPont’s SiC wafer division for $450
million in February 2020.145
Wolfspeed is the market leader with an estimated ~60% market share, with the remaining
(40%) by the rest of the world.146
Figure 13: Global Market Participants

Source: Wolfspeed. (November 2021).147
4.3.4.1 Chinese SiC Manufacturers Entering Market
Chinese SiC chip manufacturers have begun to enter the market and are looking to scale up
production. Typically, Chinese SiC chip manufacturers (as well as Chinese manufacturers
of SiC substrates, epi-wafers, and systems) are not vertically integrated. While the share
of Chinese firms in the SiC substrate, market was only 3% - 4% in 2015, several Chinese
firms have made investments in SiC substrate and epi-wafer manufacturing, increasing
capacity. More than $2 billion were invested by Sanan, TankeBlue, SICC and other Chinese
suppliers covering wafer and epiwafer fabs and packaging. The following table provides
an overview of the semiconductor players from China.148
40
Table 17: Chinese SiC Semiconductor Player
Company Description
Sanan Integrated Sanan Integrated Circuit Co., Ltd. is a compound semiconductor wafer
Circuit Co., Ltd foundry, serving the microelectronics and photonics markets worldwide.
The company was founded in 2014 and is based in Xiamen City, China,
operating as a subsidiary of Sanan Optoelectronics Co., Ltd. The company
develops and provides GaAs, GaN, SiC, and InP foundry services with its III-V
compound semiconductor fabrication facilities.149 Sanan is mainly focuses
on III-V compound semiconductor materials’ R&D and applications. Its core
businesses are wafer’s and chip’s new semiconductor materials, including
GaAs, GaN, SiC, InP, AlN, and sapphire. In 2017, Sanan invested RMB 33.3
billion in III-V compound semiconductor materials’ facilities. All projects are
planned to be put into mass production in five years and reach their design
capacities in seven years.150
In 2018, Sanan, a pure-play wafer foundry with its advanced compound

semiconductor technology platform, announced that it had achieved process
qualification for commercial release of its 6-inch SiC technology to add to its
foundry services portfolio. Sanan IC’s SiC process technology offers device
structures for 650V, 1200V and higher-rated Schottky Barrier Diodes, to be
followed by a SiC MOSFET process for 900V, 1200V, and higher. SiC SBDs and
SiC MOSFETs.151 In 2020, Sanan announced its growing portfolio of advanced,
wide bandgap power electronics foundry services for 650V and 1200V SiC
devices, and 650V GaN power high-electron-mobility-transistors.152
TanKeBlue TanKeBlue Semiconductor, a wholly owned subsidiary of Xinjiang Tianfu
Semiconductor Energy, is the first and largest supplier of SiC mono-crystal products in China.
Currently, the company has developed 2-inch, 3-inch, 4-inch, and 6-inch SiC
wafers, with its annual capacity of 70,000 pieces.153
EpiWorld Pure-play SiC epitaxial wafer foundry EpiWorld International Co Ltd in Xiamen,
International China (a privately owned joint venture with investors in the USA, Japan,
and China). In 2019, the company installed an AIX G5 WW C high-volume
manufacturing system SiC epitaxial wafer foundry. With this addition, annual
capacity was expected to be increased to 60,000 wafers in 2019. The company
also completed phase I expansion of an 18,000m2 facility.154 Production lines
for 4- and 6-inch SiC epi-wafers for making 650 Volt-, 1,200 Volt- and 1,700
Volt-power devices are complete. The company completed manufacturing
center provides space for rapid expansion to 400,000 6-inch epi wafers per
year in 2020. EpiWorld currently has a capacity of over 60,000 pc/yr.155
Dongguan Tianyu Dongguan Tianyu Semiconductor Technology Co., Ltd. was established in 2009.
Semiconductor It specializes in R&D, production, and sales of third-generation semiconductor
silicon carbide epitaxial wafers.
Global Power Global Power Technology, a leader in China in industrialization of SiC power
Technology devices, has China’s only SiC device production line. In 2014, the company
succeeded in mass producing SiC Schottky Barrier Diode, but the scale was
still at the starting stage, with the current capacity of only 4,000 pieces.156
SICC Science & In 2018, the company funded a SiC material project, funded with a 3 billion
Technology Co., Ltd. yuan ($431.6 million).157
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Company Description
Beijing Century Century Goldray Semiconductor was founded in 2010 in Beijing with registered
Goldray capital of RMB 234 million. The company’s focus is on the R&D, manufacture,
Semiconductor Co., and sales of the second and three generation of semiconductor powder, wafer,
Ltd. epitaxial, substrates and appliances. Main products include 3-4 SiC wafers,
GaN wafers, InP wafers, GaSb wafers, SiC powder, SiC-SiC epitaxial.158
Yangzhou Yangjie Yangzhou Yangjie Electronic is an integrated device manufacturer in China,
Electronic Technology which integrates discrete semiconductor chip design and production,
Co., Ltd. semiconductor component assembly and test as well as market sales &
services.159
Semiconductor Zhuzhou is a prominent maker of traction systems for locomotives and for
Business Unit of electric multiple units and urban transit train applications.160 In 2017, Shandong
Zhuzhou CRRC Tianyue developed a new high purity SiC. Currently, the mass production
Times Electric Co., products are mainly 4 inches. In addition, its 4H conductive SiC substrate
Ltd. materials are mainly 2 inches, 3 inches and 4 inches. And 6 inches. Shandong
Tianyue also developed a 6-inch N-type silicon carbide substrate material.161
Dongguan Tianyu Shandong Tianyue is a leading enterprise in my country’s third-generation
Semiconductor semiconductor material silicon carbide.
Technology Co., Ltd.
Xiamen In September 2018, Xiamen Xinguang Runze Technology Co., Ltd started
Xinguangrunze an intelligent power module production line, marking another important
Technology Co., Ltd. breakthrough in China’s strategic emerging industry of silicon carbide chips.162
CISRI-Zhongke Energy In July 2017, Zhongke Energy signed a cooperation agreement with Qingdao
Conservation and Laixi City and Guohong Zhongjing to invest in the construction of a SiC crystal
Technology Co., Ltd. growth line project. After completion, it can produce 50,000 6-inch N-type
silicon carbide crystal substrate sheets and 5,000 pieces of 4-inch high-purity
semi-insulating type.163
Tianke Heda Tianke Heda has developed four products: 4-inch silicon carbide wafer
production (6-inch unproduced, ready); silicon carbide single crystal growth
equipment; silicon carbide crystal cutting, wafer processing and clear return
service; silicon carbide gemstone crystal. Tianke Heda has more than 100
furnaces and can produce 20,000 pieces of 4-inch conductive silicon carbide
wafers a year.164
Hebei Tongguang Hebei Tongguang’s main products include 4-inch and 6-inch conductive, semi-
insulating silicon carbide substrates, of which 4-inch substrates have reached
the world’s advanced level.165
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4.4 Company Profiles
This section provides brief profiles of key companies.
4.4.1 Wolfspeed, Inc.
The Wolfspeed (Durham, NC) was founded in 1987 and is a manufacturer and marketer
of power products, products for radio frequency (RF) applications, lighting components
and semiconductor chips. “Wolfspeed has historically been a company with a presence
in Lighting, LED, and SiC and GaN semiconductors. After Gregg Lowe joined Wolfspeed
as CEO in September 2017, the company has divested its Lighting and LED segment
and “transformed Wolfspeed from a lighting and LED company to a semiconductor
powerhouse.”166
Wolfspeed is one of the leaders in semiconductor chips that use SiC and GaN technologies,
with an estimated 60% of the market.167 The company provides SiC silicon materials for
RF and power applications as well as MOSFETs, GaN dies and high-electron-mobility
transistor, among other products. Wolfspeed’s earnings statements also reflect its role
in driving the SiC market. According to Wolfspeed’s financial results for fiscal year 2020,
Wolfspeed gross profit (which includes SiC) from June 2019 to June 2020 was $186.4
million, registering gross margin of 39%.168 Wolfspeed’s Wolfspeed business is a global
leader with 60%+ share in substrates for SiC.169 Wolfspeed management believe the
company has market leadership for several reasons:170
• Silicon carbide extremely difficult to grow with high difficult to grow with high
quality.
• Wolfspeed has by far the most experience and learning in manufacturing of
manufacturing of SiC crystals.
• Wolfspeed has a tremendous head tremendous head start over competitors in
terms high volume production silicon carbide boules.
In the November 2019 “Wolfspeed Investor Day” slide deck,171 Wolfspeed reaffirmed its
market leadership in the SiC market, highlighting the benefit of leveraging its experience
in growing SiC crystals. Wolfspeed had ~62% market share if you include all the SiC that
has been shipped over the past 22 years, including in LEDs and RF, Wolfspeed estimated
that it has shipped over 95% of the total SiC during this time. It appears that Wolfspeed
has a clear advantage in its manufacturing capabilities. While competition in the market
is increasing, Wolfspeed has been able to maintain its
competitive advantage.
As part of its $1 billion
capex plans over the
To meet the expected increase in SiC demand, Wolfspeed
is increasing its fab and/or wafer capacities.172 As part five years, 2019 -2024,
of its $1 billion capex plans over the five years, 2019 Wolfspeed is expanding
-2024, Wolfspeed is expanding its SiC fab capacity by its SiC fab capacity by up
up to 30X by 2024 amid what the company believes is to 30X by 2024 amid what
increasing demand. This includes investment in the
173 the company believes is
Durham (NC) production plant to ramp up production increasing demand.
of SiC materials. Wolfspeed is also moving forward
174
43
with the next SiC wafer size—200mm from its 150mm fab capacity. In September 2019,
Wolfspeed announced expansion for an automated 200mm silicon carbide fabrication
facility in Mohawk Valley (NY), after getting $500 million worth of incentives from the
State of New York. Work at the Utica facility started in 2020.175
Table 18: Wolfspeed, Wafer Fab Strategy
Location Sq. Foot Wafer Diameter Tool Lay Out Automation
Durham, NC 99K sq. ft 100 – 150 mm Bay and Chase Manual

Research 99K sq. ft. 100 – 150 mm Bay and Chase Manual
Triangle Park
(Durham, NC)
Mohawk Valley 115k sq. ft 100 – 150 mm Ball room Automated
Fab, NY
Source: Wolfspeed. “Investor Day” slide deck. (November 20, 2019).176
At an investor conference in October 2020, CEO Gregg Lowe stated the company’s
strategy is to be a “pure-play global semiconductor powerhouse for silicon carbide and
gallium nitride devices, as well as materials.”177 Wolfspeed also presented its silicon
carbide strategy in the February 2018 Investors’ Day. The strategy for becoming a more
streamlined supplier of SiC and GaN chips includes: (1) ensuring a new source of revenue,
(2) expand activities towards new sectors and
more. In this presentation, Wolfspeed reiterated
Wolfspeed believes the next
its commitment to the development of SiC and
GaN to gear up for the “large multi-decade growth generation power electronics
opportunities in electric vehicles, solar energy, will be powered by SiC, with
telecommunications, industrial, and military/ half of the pipeline dedicated
aerospace.” In line with the strategy, Wolfspeed
178 to electric vehicles. Beyond the
strengthened its wireless RF portfolio solutions automotive market, Wolfspeed
with the acquisition of Infineon’s RF business in is targeting broad markets
2018.179 Wolfspeed divested its lighting business including solar, aerospace,
for $310 million in 2019 and LED business in
180
defense and industrials
March 2021.181
Wolfspeed believes the next generation power electronics will be powered by SiC, with
half of the pipeline dedicated to electric vehicles.182 Wolfspeed’s SiC-based devices are
produced in a fab, where the company continues to make a wafer size transition. “SiC is
available on both 4- or 6-inch. Wolfspeed has made the transition from 4 - (100mm) to
6-inch (150mm) wafers.183 Wolfspeed has high optimism for the SiC business.184 Beyond
the automotive market, Wolfspeed is targeting broad markets including solar, aerospace
and defense and industrials. Wolfspeed is bracing for a major uptick in SiC inverters for
automotive and industrial applications in the few years to come.185
44
Wolfspeed’s strategy for SiC adoption includes: (1) Selling bare and epitaxial chip wafers
to third-party chipmakers and (2) selling internally designed chips. Wolfspeed has long-
term agreements totaling more than $1B to produce and supply its SiC wafers.186 Strategic
partners are listed in table 19.
Table 19: Wolfspeed SiC Partnerships
Application Partner Description
Automotive onsemi Wolfspeed signed a long-term strategic agreement

ON Semiconductor valued at more than $85 million.
Wolfspeed will supply of 150mm SiC bare and epitaxial
wafers to ON Semiconductor for use in “high-growth
markets” such as EVs and industrial applications.187
Automotive Delphi Technologies A partnership with Delphi Technologies in which
Wolfspeed supplies SiC semiconductor devices to
improve the driving range and charging times of
Delphi’s electric vehicles. The Wolfspeed SiC MOSFETs
will initially be used in Delphi Technologies’ 800 Volt
inverters for a “premium global automaker.” Production
will ramp in 2022.188
SiC Wafers STMicroelectronics Wolfspeed expanded a long-term SiC wafer
supply agreement to more than $500 million with
STMicroelectronics. The extended agreement is a
doubling in value of the original agreement for the
supply of Wolfspeed’s advanced 150mm silicon carbide
bare and epitaxial wafers to STMicroelectronics over
the next several years.189
Automotive ABB ABB will use SiC devices in the EVs. ABB’s strategy
in developing energy-efficient silicon carbide
semiconductors in the automotive, power grid, and
industrial sectors.190
Automotive StarPower StarPower is using Wolfspeed 1200V silicon carbide
Semiconductor devices in power modules for powertrain systems for
electric buses.191
Automotive ZF Friedrichshafen AG Create electric drivetrains for EVs to advance the
electric powertrain with SiC-based Inverter. ZF expects
to make silicon carbide electric drivelines available in
the market by 2022.192
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4.4.2 Fuji Electric Corporation
Fuji Electric Corp. of America is a wholly owned subsidiary of Fuji Electric Co., Ltd.,
and has been responsible for sales and distribution of the company’s products since
1970. Fuji Electric is one of the leading players across the power electronics system
industry. Incorporated in 1923 as a capital and technology alliance between Japan’s
Furukawa Electric Co., Ltd. and Germany’s Siemens AG, Fuji Electric has established their
presence across the semiconductor market. Fuji Electric manufactures and sells power
semiconductor devices that contribute to high power conversion efficiency and energy-
saving across industrial, automotive, and consumer electronics applications.193
Fuji Electric manufactures various power products

including SiC power devices. Approximately 30% Fuji Electric’s all-SiC
of its products ship to the automotive industry. In
modules with SiC MOSFETs
2013, Fuji built a new SiC line at its Matsumoto plant
that includes both wafer process and packaging were introduced in 2014 and
facilities. Fuji Electric manufactures SiC devices on have applications in power
150mm SiC wafer technology. The “all-SiC modules” conditioners in solar power
with SiC MOSFETs were introduced in 2014 and has applications.
applications in power conditioners in solar power.194
Fuji Electric has been developing SiC technologies and products for the next generation
power semiconductor business:
“As Fuji’s first SiC products, the 600V and 1200V hybrid power integrated modules
(PIMs) included silicon IGBTs with SiC diodes. The modules were used in inverters
for air conditioners in internet data centers beginning in 2012. Another product is a
1700V/400A hybrid module for 690V inverters called the “FRENIC-VG Stack Series,”
which started sales in 2014. In 2015, Fuji developed a 3.3kV/1.2kA hybrid module,
which was applied in the next generation Shinkansen, the high speed train in Japan.
Fuji also developed all-SiC modules with SiC MOSFETs in 2014 and applied them
in power conditioners in solar power applications. Regarding mass-production
facilities, Fuji has built a 6-inch front-end factory, whose production line has been
operating since 2013, followed by an automated back-end factory, which has been
operating since 2014. Fuji plans to expand its all-SiC module range, offering Type 1,
2 and 3L with voltage classes of 1200V (15 to 300A and higher) in 2016 and 2017,
and 1700V (25 to 200A).”195
Fuji has made a strong push into SiC power materials, devices, components, and modules,
particularly in the traction drive market. Fuji Electric 2.0 strategy’s entails developing its
global power electronics systems business and India has been identified as one of the
key markets in Fuji’s global growth plan. In February 2020, Fuji Electric India, the 100 per
cent subsidiary of Fuji Electric, announced interest in expanding into the solar inverters
and batteries business in India. A Fuji press release reported, “Fuji Electric is currently
focusing on expanding its three existing product segments – Un-interrupted Power
Supply systems, Variable Frequency Drives that boost energy efficiency and automation
products. …. The plan is to launch solar inverter business first along with setting up a
facility for manufacturing and assembly of different components into Megawatt-scale
46
solar inverters.”196 In January 2022, Fuji stated it would make capital investments in its
semiconductor manufacturing – includes silicon and SiC:197
“In the Five-Year Medium-Term Management Plan ending in fiscal 2023 (fiscal 2019 -
fiscal 2023), FE announced that it will carry out capital investments totaling 120 billion yen
toward power semiconductors. Although our capital investments currently focus on front-
end process production lines for 8-inch Si (silicon) wafers, our amount of investments
in power semiconductors, including this investment in SiC power semiconductors, is
expected to expand to 190 billion yen, set against conditions of increased demand for
electrified vehicles and renewable energy.
FE has developed and applied SiC power semiconductors for equipment such as inverters
for railcars and power conditioning systems used for power conversion in photovoltaic
power plants. We intend to widen the scope of their application to electrified vehicles,
whose market is expected to expand, and contribute to the realization of a decarbonized
society.”
Table 19: Fuji – SiC Modules for Power Electronics Products
New
Config- VCES Pack- Width Length
Device Type prod- Series IC(A)
uration (V) age (mm) (mm)
ucts
1MSI1200XAGF330-03 1-pack Hybrid 3.300 1.200 M155 140 130
1MSI1800XAEF330-03 1-pack Hybrid 3.300 1.800 M156 140 190
2MSI200VAB-120-53 New 2-pack Hybrid 1.200 200 M274 45 92
2MSI300VAH-120C-53 New 2-pack Hybrid 1.200 300 M276 62 108
2MSI300VAN-120-53 New 2-pack Hybrid 1.200 300 M254 62 150
2MSI400VAE-170-53 New 2-pack Hybrid 1.700 400 M277 80 110
2SI900AGF330-03 2-pack SiC-SBD 3.300 900 M289 140 130
7MBR100VB060S-50 New PIM Hybrid 600 100 M712 62 122
Source: Fuji Electric. “SiC Devices.”198
4.4.3 Infineon Technologies AG
Headquartered in Munich, Germany, Infineon Technologies AG was founded in 1999. The

company is a manufacturer, designer, and developer of semiconductors. The company
specializes in energy efficiency, mobility and security products and solutions. Products
offered by Infineon Technologies AG include power sensors, microcontrollers, transistors
and diodes, and RF and wireless controls, among others.
Infineon offers the CoolSiC MOSFETs. These 650V devices, which are rated from 27 mΩ
to 107 mΩ, have stated usefulness in telecom, industrial, EV, and solar power applications,
47
among others.199 Infineon’s business is dominated by industrial applications and additional
potential in the automotive.200
With respect to solar, Infineon’s product portfolio “comprises a broad selection of inverters
ranging from just a few watts and kilowatts for residential use to several megawatts for
the commercial and utility-scale markets. It includes discrete OptiMOS™, CoolMOS™ and
CoolSiC™ MOSFETs and IGBTs as well as highly integrated 3-level Easy 1B/2B modules,
functionally integrated EiceDRIVER™ gate driver ICs and XMC™ controllers.” Infineon
claims a maximum efficiency of over 99% by using CoolSiC™ MOSFET solutions from
Infineon.201
Figure 15: Infineon – SiC Solutions for Solar

Source: Infineon Technologies AG. (2019).202
Infineon is not completely vertically integrated and has supply agreements with Wolfspeed
for 150 mm SiC wafers.203 Infineon produces SiC devices in a 150mm line. Infineon sees
growing interest in SiC-based power devices, with growth well above the expected general
market level. Although 150mm is sufficient in the short- and medium-term, Infineon believes
long-term, 200mm will be needed to advance the technology. Infineon’s manufacturing
lines are capable of processing 200mm.204 Infineon has further publicly disclosed “SiC
line resides within its 300mm fab, which produces silicon-based power semiconductors.
Because Infineon integrates SiC production into high-volume silicon line, Infineon can
benefit from a high-volume flexibility. Therefore, production expansion can be managed
based on actual demand without requiring significant investments.”205
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Table 20: Infineon Technology – Solar Partnerships
Company Description
Sungrow Sungrow teamed with Infineon to manufacture a 250kW solar inverter,
which uses custom SiC power modules from Infineon. The SG250HX
uses the SiC module with high voltage 1500Vdc and 800Vac operation
to give the string inverter a maximum of 99 percent efficiency and a
power density of 1kW/l.206
SMA Solar Germany-based SMA Solar Technology teamed up with Infineon to

Technology use SiC power devices in its solar inverter designs. Infineon developed
a custom solar inverter power module that included both a classic
TRENCHSTOPIGBT and a CoolSiC MOSFET with body diode. The Active
Neutral-Point Clamped topology allows system voltages up to 1500 V
maximum to be switched with switches designed for 1200 V.207
Fronius In November 2020, Fronius International launched the Symo GEN24

International Plus solar inverter, which is suitable for a wide range of applications
GmbH (Austria) supporting energy self-sufficiency. Using CoolSiC MOSFETs from
Infineon Technologies AG, the Symo GEN24 Plus “achieved a record
value in the System Performance Index (SPI) of 94 percent in the 10 kW
class. It was the only one in this combination to achieve Class A energy
efficiency.” The inverter weighs only 24 kg and has a small volume (HWD
594 x 527 x 180 mm 3). Its active air-cooling can reduce the temperature
of the power electronics parts, and thus extend service life. The inverter
is available in the power classes 6, 8, and 10 kW. Fronius supplies this
inverter primarily in Europe, South America, and Australia.208
4.4.4 ROHM Semiconductor
Headquartered in Kyoto, Japan, ROHM Semiconductor was established in 1958. The

company was previously known as Toyo Electronics Industry Corp. and was rechristened
as ROHM Co. Ltd. in 1981, and to ROHM Semiconductor in 2009. ROHM Semiconductor
is a public company and is listed on the Tokyo Stock Exchange. ROHM is at the forefront
in the development of SiC power devices and modules that offer improved power-savings
in applications across several industries. In 2009, Rohm acquired a German SiC wafer
maker, SiCrystal, which started supplying 150mm wafers to Rohm in 2013. Rohm also
acquired Renesas Electronics’ Shiga plan, Japan (200mm line) in 2016 to manufacture
SiC power and other discrete devices.209
ROHM’s portfolio is bare chips and discrete products of SiC Schottky barrier diodes and
SiC MOSFET and Full SiC power modules incorporating both the company’s SiC Schottky
barrier and SiC MOSFETs. 210
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Table 21: Rohm Semiconductor – Solar Power Electronics Products
Products Applications
1200V 400A/600A rated full SiC Optimized for inverters and converters in solar power
power modules conditioners, UPS, and power supplies for industrial
BSM400D12P3G002 equipment
/BSM600D12P3G001
1200V/300A SiC power module designed for inverters and converters
in solar power conditioners and industrial equipment.
The 300A rated current makes the BSM300D12P2E001
suitable for high power applications such as large-
capacity power supplies for industrial equipment.211
In 2018, Rohm announced a 150mm fab expansion plan within a new building. Rohm has
plans to increase its SiC production capacity by 16X at a total investment of approximately
$546.1 million by 2025. In June 2018, Rohm announced plans to establish a SiC production
facility at Apollo Plant in Chikugo Japan (completed in 2021) to meet the growing demand
for SiC power devices. In addition to this facility, SiCrystal GmbH, a Rohm Group company
manufactures SiC wafers.212 In 2021, Zhenghai Group and Rohm formed a joint venture
agreement (Zhenghai Group will own 80% and Rohm 20%). The JV, HAIMOSIC will develop,
design, manufacture, and sell power modules employing silicon SiC power devices, with
the aim of creating a power module business suitable for traction inverters and other
applications in new energy vehicles.213
Rohm is “pushing hard in the automotive and

industrial markets.” Rohm has publicly disclosed ROHM’s silicon carbide
SiC technology is evolving in electric vehicles and MOSFETs are being used
industrial equipment and Rohm is continuing to by Midnite Solar (Arlington,
invest in this area. Rohm is working to improve WA) in its solar products.
manufacturing efficiency by increasing wafer size
diameter and using the latest equipment to reduce
the environmental impact of manufacturing.214 With respect to automotive applications,
the company is “addressing the key applications to the electrification of vehicles with
common devices such as the traction inverter and on-board chargers.”215 Rohm is also
targeting solar power electronics.216 Rohm’s silicon carbide MOSFETs are being used in
Midnite Solar (Arlington, WA) solar products.217 However, no other solar partners have
been publicly announced making it difficult to determine if the SiC MOSFETs are being
manufactured in large quantities.
Rohm is also looking at 200mm. Rohm also expects 8-inch wafer production soon. The
company has decided that 8-inch equipment shall be installed in the new building, which
the company can use for the production line for either 6- or 8-inch based on the technology
and market situation.218
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Table 22: Rohm Semiconductor – Partnerships
Application Partner Description

Solar Midnite Solar Midnite Solar (Arlington, WA) is utilizing ROHM’s silicon
carbide MOSFETs. Four products new to the US market
– the Hawkes Bay 600VDC to 48VDC 6000W MPPT solar
charge controller, powerful Barcelona dual MPPT charge
controller, MNB17 advanced battery-based charger/
inverter, and 120/240V Rosie inverter/charger. Midnite
Solar incorporates ROHM’s 60mΩ RDS(on) SiC devices
and newer 30mΩ RDS(on) products in its new solar
product ranges.219
Electric Vitesco Vitesco Technologies will use SiC components in its power
Vehicles Technologies electronics for EVs. ROHM and Vitesco Technologies will
work on creating the optimum combination of ROHM’s
SiC technology for high-volume manufacturing. Vitesco
Technology plans the start of production of the first SiC
inverter in 2025.220
SiC Devices STMicroelectronics SiCrystal AG signed a multi-year agreement to supply more
than $120m of 150mm SiC wafers to STMicroelectronics
“during what is described as this current period of demand
ramp-up for silicon carbide power devices.”221 SiCrystal
owns all processing stages from the production of the
original material to packaging the epi-ready substrate in
an in-house clean-room environment.
4.4.5 STMicroelectronics N.V.
STMicroelectronics (Amsterdam, Netherlands) is one of the leading providers of

semiconductor solutions. STMicroelectronics started working with SiC in 1996, producing
its first SiC diodes in 2004. In 2009 ST started to produce its first SiC MOSFETs and
power Schottky diodes. ST’s 150mm SiC wafer production started in 2017. Some of
the power electronics products offered by the company include power modules, IGBT,
power MOSFETS, wide bandgap transistors, power management devices, silicon carbide
diodes, automotive-grade diodes, Schottky barrier diodes, and field-effect rectifiers.
STMicroelectronics has two SiC manufacturing sites. ST’s portfolio of SiC MOSFETs
includes devices from 650V to 1200V and SiC diodes ranging from 600V to 1200V that
feature negligible switching losses and 15% lower forward voltage than standard silicon
diodes.”222
The company’s strategy of targeting $1B SiC in revenue by 2025 is by having >40%
production with inhouse substrate by 2024.223 Striving for SiC market domination, ST has
made some moves in the market, for example:
51
• In November 2019, STMicroelectronics entered long-term SiC wafer supply
agreement with Wolfspeed, Inc worth more than $500 million.224
• ST acquired various players in SiC and GaN ecosystem to broaden its
portfolio and expand its market presence. Some of the recent acquisitions
include Exagan225 and Norstel AB, which develops and manufactures
advanced 150mm silicon carbide bare and epitaxial wafers.226
With these acquisitions, ST intends to ramp up production of 150 mm SiC wafers as well
as increase research and development activities on 200 mm wafer production. Activity
on 200 mm R&D wafer preparation has already started and ST” intends to be ready with
the technology when the market requires wafer migration.” 227 In a 2019 press conference,
Marco Monti, President of ST’s Automotive and Discrete group provided insights into the
company’s strategy and the need to control the supply chain stating that,228
50% of the power semiconductors market in 30 years will be based on SiC. While ST
currently outsources the supply of ingots and substrates (with the epitaxy and wafer
processing carried out in Catania), ST wants to have more control of the supply
chain and bring it internal. … ST already has plans to further integrate Norstel into
its supply chain … the ambition is to be more vertically integrated. While its SiC is
currently on 6-inch wafers, it intends to use its Norstel and local research links to
push to 8-inch slices, probably by 2025.
In February 2022, STMicroelectronics announced it will start bringing its supply chain
for SiC in house, from substrates to end products. ST is building a SiC substrate 300mm
wafer fab in Agrate, Italy that will supply about 40 per cent of its SiC substrates internally
by 2024. In its “billion-dollar revenue” objectives, STMicroelectronics has stated its annual
revenues from the semiconductor, used in electric cars and applications will be in the
ten figures within the next couple of years. As part
of a roughly $3.6 billion CapEx spending program,
STMicroelectronics is
STMicroelectronics is investing in SiC for power
building a SiC substrate
management and analog circuitry ST estimates
its annual revenue from these SiC products will hit 300mm wafer fab in Agrate,
$1billion by 2024. ST has also moved along the
229 Italy that will supply 40% of
module level. Their modules have been used in the its SiC substrates internally
Tesla Model 3. STMicroelectronics demonstrated by 2024.
their in-house 8” SiC wafer in 2021.
With respect to applications, although ST is targeting the automotive market, while

automotive markets get much of the attention for SiC MOSFETs and diodes, ST also sees
a “significant opportunity for SiC, and GaN, in high-end industrial applications, including
power supplies, renewable generation and industrial motor drives.” ST is an established
supplier to the solar PV market providing hybrid power integrated modules using 1200V
SiC diodes and will soon provide full SiC modules that incorporate 1200V SiC MOSFETs.230
STMicroelectronics is a leading global supplier for SIC with >50% market share for SiC
MOSFETs in automotive and industrial markets.231
52
4.5 Other Notable U.S. Companies
4.5.1 onsemi
onsemi (Phoenix, AZ) is a semiconductors supplier company. The company has a market
capitalization of $16 billion. Products include power and signal management, logic,
discrete, and custom devices for automotive, communications, computing, consumer,
industrial, LED lighting, medical, military/aerospace and power applications. onsemi
designs and manufactures semiconductor chips, sensors, power management devices
and other electronic components at 20 sites, most in the Asia-Pacific region. The company
added the South Portland operations in its 2016 acquisition of Fairchild Semiconductor
International Inc. for $2.4 billion. At the time, the plant and offices employed about 700.232
The company’s goal is to be “a top tier SiC supplier with complete vertical integration from
boule growth to finished goods inclusive of die only, discrete devices, and modules for
both the industrial and automotive markets.”233
onsemi offers products for solar. For instance, in June 2020, ON Semiconductor introduced
the NXH40B120MNQ family of full SiC power modules (1200 V, 40mΩ SiC MOSFET and
1200 V, 40 A SiC boost diode with dual boost stage) for solar inverter applications.234
Table 23: onsemi SiC Products
Product Description
200V Silicon Carbide 900 V N-channel SiC MOSFETs include a fast intrinsic diode with low
SiC MOSFETs reverse recovery charge that reduces power losses and boosts operating
frequencies. A small chip size also leads to a lower device capacitance and
reduced gate charge (Qg) down to 220 nC) and on resistance of 20, 40 and
80mΩ, reducing switching losses when operating at high frequencies.
900V Silicon Carbide The 1200 V devices are rated at up to 103 A (ID Max.), while 900 V devices
SiC MOSFETs carry ratings as high as 118 A. For applications requiring higher currents,
the ON Semiconductor MOSFETs can be easily operated in parallel, due to
their positive temperature coefficient and temperature independence.
4.5.2 UnitedSiC
UnitedSiC (Princeton, NJ) develops silicon carbide FET and diode power semiconductors
for solar PV inverters, as well as for electric vehicle (EV) chargers, DC-DC converters and
traction drives, and telecom/server power supplies variable speed motor drives. Products
that UnitedSiC offers includes: SiC FETs, SiC JFETs, and SiC Schottky Diodes.
According to company claims, the UnitedSiC product portfolio was expanding in 2020 at
a rapid rate. The company currently offers a wide range of voltages, with RDS(on) levels
starting at an industry-best 7mohms, as well as packages ranging from D2PAK, TO-220,
TO-247, and more. UnitedSiC introduced its Generation 4 SiC technology in 2020, which
enabling the introduction of new FETs at 750V. These performance levels are designed
to accelerate WBG adoption in automotive and industrial charging, in addition to telecom
rectifiers, and datacenter PFC DC-DC conversion, as well as renewable energy and energy
53
storage applications. Worldwide customers are using UnitedSiC FET, JFET, and Schottky
diode devices in solar PV inverters, EV chargers, AC-DC and DC-DC power supplies, and
solid-state circuit breakers, as well as variable speed motor drives.235
For solar applications, UnitedSiC offers the UF3C family of 650 V and 1200 V SiC FETs. A
low RDS(on) for solar power inverters is a vital factor affecting inverter longevity, as heat is
destructive.236
4.5.3 Microchip Technology
Microchip Technology Inc., via its Microsemi subsidiary, announced in 2019 the production
release of a family of SiC power devices. The new products include 700-V and 1,200-
V SiC Schottky barrier diodes (SBDs) and 700-V SiC MOSFETs. Totaling more than 35
discrete products, Microchip’s SiC power product portfolio consists of SiC discrete,
die, and power modules across various voltages, current ratings, and package sizes.237
Microchip Technology is seeing interest and applications in silicon carbide technology
across various industries including industrial, automotive, computing, medical, aviation,
defense, space, and others. 238
4.5.4 Genesic Semiconductor, Inc.
Headquartered in Dulles, Va., GeneSiC Semiconductor Inc. was established in 2004. The
company operates through two business segments, namely silicon carbide, and silicon-
based high-power semiconductor products. The SiC product segment includes SiC
MOSFETs, SiC Merged PiN Schottky, SiC PiN, SiC junction transistors, and customized
products. The silicon products segment comprises modules, bridges, and studs. GeneSiC
Semiconductor caters to the aerospace, commercial, industrial, alternative energy, and
military industries. Moreover, the company specializes in gallium nitride, JFETs, IGBT
modules, thyristors, and wide-bandgap semiconductors.
The company offers silicon carbide products and silicon products. Under silicon carbide
product segments, GeneSiC offers SiC junction transistors, SiC PiN, SiC MOSFETs, SiC
Schottky diodes, and customized products. Under silicon products, the company provides
bridges, modules, and studs.
4.5.5 Littelfuse, Inc.
Headquartered in Chicago, IL. manufactures electronics and electrical devices. Founded in

1927, Littelfuse is a public company and is traded on the NASDAQ. The company engages
in the development and manufacturing of silicon carbide diodes and SiC MOSFETs. The
company further specializes in manufacturing thyristors, varistors, power distribution
equipment, transient voltage protection, and zener diodes. The products in this segment
comprise silicon carbide, SiC diodes, MOSFETs, transient-voltage-suppression diode
arrays, and IGBTs. Littelfuse Inc.’s electronic segment products are used in automotive
electronics, consumer electronics, medical, information technology, lighting products,
and telecommunication equipment applications. As of December 2017, Littelfuse Inc. had
over 10,000 employees.
54
In November 2018, Littelfuse acquired Monolith Semiconductors Inc., a startup company
developing SiC power devices technology. Littelfuse began partnering with Monolith
from 2015 and gradually increased its ownership in recent years. Also in 2018, Littelfuse
announced the launch of its 1700V, 1 Ohm SiC MOSFET, which enables increased efficiency
and power density. This new expanded Littelfuse’s SiC MOSFET device portfolio. Electric
and hybrid vehicles, induction heating and solar inverters are among the applications of
the 1700V SiC MOSFET.
4.5.6 Powerex, Inc
Mitsubishi holds 50% ownership in Powerex, Inc. The company supplies discrete devices,
modules, and integrated high-power semiconductor solutions. The company’s product
portfolio consists of IGBTs, rectifiers, thyristors, custom power modules, and assemblies.
It offers SiC MOSFET, and hybrid Si/SiC IGBT modules. These products have in applications
such as boost converters, inverters, high-frequency power supplies, medical imaging
amplifiers, electric vehicles, energy-saving power systems (fans, pumps, and consumer
appliances), and high-temperature power systems. The company has its manufacturing
facility in the US and sales representatives in Europe, APAC, and MEA.
5.0 Summary
The purpose of this report is to provide insight into factors that affect the availability of SiC
for the U.S. solar inverter market. For the next five years, SiC is forecast to be the option
for power electronic devices within certain voltage ranges, and will continue to displace
their silicon based counterparts in some applications.239 The growing market demand for
SiC-based power electronics is driven by the rising adoption of SiC devices by OEMs of
EV, which is expected to create growth opportunities for the power electronics market.240
Market consulting firm, Frost & Sullivan believes the majority of EV OEMs will transition to
SiC by the end of the decade for advanced power electronics.241 The next big SiC use case
is expected to be in PV for storage, where efficiency improvements can reduce the size of a
battery, both in residential and larger installations.242
Though inverters account for around 5% of total solar PV system costs, these devices are
indispensable. The growth of the solar PV inverter segment is directly proportional to the
increase in solar PV power installments.243 Solar inverters are of three types – (1) Central
inverters are used in large scale installations and large commercial buildings; (2) String
inverters are used in medium-sized installations such as commercial and residential
establishments; and (3) microinverters are mostly used in residential installations with
some installations in the commercial field. Each inverter type has a unique distribution
channel:
• The main distribution channel for central inverters is direct sales as these
devices need to be customized as per project requirements.
• Manufacturers rely heavily on distributors for the sale of string inverters and
55
microinverters due to the standardized nature of these products. System
integrators and engineering, procurement and construction (EPC) firms are
other important distribution channels for string inverters used in large-scale
projects.
• Direct sales through online portals contribute to the sale of microinverters.
In addition, manufacturers of solar PV inverters also sell to solar module
manufacturers who bundle inverters with their modules to sell as complete
solar PV solutions.
With respect the global solar inverter market, the top 5 participants account for a little
less than 50% of the market: Huawei Technologies (China); Power Supply (China); SMA
Solar Technology (Germany); and SolarEdge Technologies (Israel). However, when it
comes to SiC-based solar inverters, the U.S. does not appear to have a large share of
the market. SiC-based solar inverter manufacturing is dominated by European and Asian
companies such as: Delta Electronics; Sungrow; KACO Energy (Siemens AG); SMA Solar
Technology AG; and Fronius International GmbH. These companies customize products
for the U.S. market.
The supply chain itself still has a few bottlenecks. With respect to the supply chain,
crystal growth requires expertise, equipment and factory design, and a mature supply
chain which are fundamental to enable industry leading capacity expansion. The supply
chain appears to still be evolving, although crystal growing is difficult, the crystal quality is
good and continues to evolve. Therefore, there have been multi-million-dollar supply deals
signed in the last two years.
The U.S. leads in crystal growing segment, with Wolfspeed and II-IV commanding the
majority of the market share. The U.S. leads in wafer manufacturing with Wolfspeed
leading the market. With respect to solar inverters, the European and Asian companies
appear to have an edge.
56
APPENDIX A: Summary Tables of
Selected Sic-based Inverters and Inverter Products
57
Table 24: Summary of Selected SiC-based Inverters for Solar
Developer/ Manufacturing
Country Description
Manufacturer Locations
Delta Taipei, Taiwan Various Delta Electronics (Taoyuan,

Electronics, Inc. Taiwan) is one of the leading
US HQ: Fremont, global players in the field of
CA power electronics, industrial and
building automation, information
and communications technology,
and energy infrastructure. The
company offers single-phase
and three-phase string inverters,
central inverters, energy storage
systems, and related accessories.
The single-phase inverters of-
fered by the company are mainly
used in houses and small facto-
ries. The three-phase inverters
are used in large-scale industrial
and commercial applications, as
well as in power plants. In 2013,
Delta Energy Systems introduced
solar inverters, which utilized SiC
power MOSFETs from Wolfspeed.
The use of SiC MOSFETs in the
next-generation PV inverters can
enable significant new milestones
in power density, efficiency and
weight.244
58
Developer/ Manufacturing
Country Description
Manufacturer Locations
Kaco energy Neckarsulm, KACO has a plant in SiC string inverters, blueplanet
Systems Germany San Antonio Texas. 155 TL3 and 165 TL3 inverters,
(Siemens AG designed for the large-scale PV
projects.245 In November 2019,
KACO extended its range of
string inverters for 1,500 Volt
projects by five SiC devices.
The blueplanet 87.0 TL3 and
blueplanet 92.0 TL3 are suitable
for solar power plants on
commercial and industrial roofs.
Inverters comply with protection
class NEMA 4X and thus meet the
highest requirements for outdoor
installation.246 In November
2020, KACO introduced 125-kW
SiC inverters for U.S. market.
The line voltage of 400 V makes
it possible to connect the
blueplanet 105 TL3 to an existing
transformer at no additional
cost.247
EnphaseEnergy California, Enphase micro- Enphase designs, develops, and
United States inverters have used sells micro inverter systems
SiC diodes for for residential and commercial
several. In 2016, markets in the U.S. and
Enphase reported internationally. With respect to
it had shipped 20 WBG materials, Enphase seems
249
million SiC 1200V to favor GaN over SiC:
diodes, thereby
making up a
large part of the
market.248
Table 25 summarizes examples of SiC-based inverters introduced on the market during

the last year.
59
Table 25: Summary of Selected New SiC Solar Inverter Products
Commercial Developer/ SiC Device

Specifications
Year Manufacturer Supplier
March 2021 Sungrow Power The SG250HX 250kW solar inverter, uses the Infineon
Supply Co., Ltd SiC module with high voltage 1500Vdc and Technologies
800Vac operation to give the string inverter
a maximum of 99 percent efficiency and a
power density of 1kW/l.250
2020 Delta Electronics, Three-phase PV string inverter incorporating ON
Inc. NXH40B120MNQ family of SiC power modules Semiconductor
integrate a 1200 V, 40mΩ SiC MOSFET and
1200 V, 40 A SiC 251
2020 Kaco Energy (1) The 155 TL3 inverter measures 719 x 699 Infineon
(Siemens AG) x 460 mm and weighs 78.2 kg. It offers a Technologies
reported efficiency of 99.1% – for a European
rating of 98.9%. The device also features
1500 V (DC) technology, a voltage range
maximum power point of 875-1,450 V, and an
ambient operating temperature ranging from
-25 C to 60 C. (2) The 165 TL3 device has the
same efficiency, size, weight, and operating
temperature as the 155 TL3 inverter, but a
higher European efficiency of 99.0%.252
2020 Sungrow Power 250kW solar inverter, which uses custom SiC Infineon
Supply Co., Ltd power modules from Infineon. The SG250HX Technologies
uses the SiC module with high voltage
1500Vdc and 800Vac operation to give the
string inverter a maximum of 99 percent
efficiency and a power density of 1kW/l.253
2020 SMA Solar SMA Solar Technology teamed up with SiC CoolSiC
Technology AG Infineon to use SiC power devices in its solar MOSFETs from
inverter designs. Infineon254
2020 Fronius Symo GEN24 Plus solar inverter weighs 24 kg SiC CoolSiC
International and has a small volume (HWD 594 x 527 x 180 MOSFETs
GmbH mm 3). Its active air-cooling can reduce the from Infineon
temperature of the power electronics parts, Technologies256
and thus extend service life. The inverter is
available in the power classes 6, 8, and 10
kW. Fronius supplies this inverter primarily in
Europe, South America, and Australia. 255
2021 Midnight Solar, Inc. Hawkes Bay 600VDC to 48VDC 6000W MPPT ROHM’s silicon
(U.S) solar charge controller, Barcelona dual MPPT carbide MOSFET
charge controller, MNB17 battery-based
charger/inverter, and 120/240V Rosie inverter/
charge257
60
Commercial Developer/ SiC Device
Specifications
Year Manufacturer Supplier
February 2021 Toshiba Electronic 1200V SiC MOSFETs, 650-V SiC Schottky NA
Devices & Storage barrier diodes and SiC MOSFET Modules.258
Corporation
The MG800FXF2YMS3, a SiC MOSFET module
integrating dual channel SiC MOSFET chips
with ratings of 3300V and 800A designed for
industrial and renewable energy applications.
Volume production started in May 2021.259
61
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65
91 MarketsandMarkets, Inverter Market by Type (Solar Inverters, Vehicle Inverter, others),
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66
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67
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144 Carl Surran, “DuPont to sell SiC wafer business to SK Siltron for $450M,” Seeking Alpha,
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68
inventory,” April 22, 2019.
162 “China’s first SiC IPM production line put into operation time,”September 20, 2018.
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‘turbocharging EVs’ March.” 1, 2021.
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173 “Wolfspeed Investor Day,” Wolfspeed, Inc., November 20, 2019.
174 “Wolfspeed to Invest $1 Billion to Expand Silicon Carbide Capacity,” Wolfspeed, Inc., May
7, 2019.
175 “One year later: Wolfspeed’s $1B factory in upstate New York is on schedule — even in a
pandemic.”
176 “Wolfspeed Investor Day,” Wolfspeed, Inc., November 20, 2019.
177 “Positioning Wolfspeed for Long-Term Growth – Divestiture of LED Products Business,”
Wolfspeed, Inc. October 19, 2020.
178 “Wolfspeed, Inc. Investor Day,” Wolfspeed, Inc, February 26, 2018.
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180 “Wolfspeed to Sell Lighting Business to Ideal Industries, Inc,” Wolfspeed, Inc., March 15,
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181 “Wolfspeed Completes Sale of its LED Business to SMART Global Holdings, Inc,”
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183 Mark LaPedus, “SiC Chip Demand Surges,” September 20, 2018.
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Wolfspeed, Inc., October 19, 2020.
187 “Wolfspeed and ON Semiconductor Announce Multi-Year Silicon Carbide Wafer Supply
Agreement,” Wolfspeed, Inc., August 6, 2019.
188 Delphi Technologies. “Delphi & Wolfspeed Partner for Automotive SiC Devices.”
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with-Wolfspeed-for-automotive-silicon-carbide-devices
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69
news/Wolfspeed-and-stmicroelectronics-expand-and-extend-existing-silicon-carbide-
wafer-supply-agreement/
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and Industrial Solutions.” November 18, 2019. https://eepower.com/news/Wolfspeed-
and-abb-announce-silicon-carbide-partnership-to-deliver-automotive-and-industrial-
solutions/
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article/yutong-group-to-deliver-its-first-electric-bus-in-china-to-use-silicon-carbide-in-
powertrain
192 Wolfspeed, Inc., “ZF and Wolfspeed Advance the Electric Drive,” November 5, 2019.
193 Fuji Electric. “Fuji Electric Report 2020.”
194 Yole Développement, Fuji Electric targets the best performance and reliability in the SiC
industry, October 27, 2016.
195 I-Micron News, “Fuji Electric targets the best performance and reliability in the SiC
industry,” October 27, 2016.
196 Roshan, “Fuji Electric May Enter Solar Inverter & Battery Business in India,” Clean Future,
February 7, 2020.
197 “Capital investment for increase in production of SiC power semiconductors,” Fuji,
January 27, 2022.
198 “SiC Devices,” Fuji Electric, 2022
199 “Solutions for residential solar systems,” Infineon Technologies AG, 2019.
201 “Solutions for solar energy systems,” Infineon Technologies AG, 2022
203 “CREE, Inc. Announces Long-Term Silicon Carbide Wafer Supply Agreement with
Infineon.” Wolfspeed, Inc., February 26, 2018.
204 Dr. Peter Wawer and Dr. Peter Friedrichs, “Industrial Power Control Business Update.”
(Infineon PowerPoint Presentation, May 7, 2020)
205 Dr. Peter Wawer and Dr. Peter Friedrichs, “Industrial Power Control Business Update.”
(Infineon PowerPoint Presentation, May 7, 2020)
206 Nick Flaherty, “Solar inverter hits 99 per cent efficiency with SiC modules,” EE News
Power, March 31, 2020.
207 Nick Flaherty, “Infineon, SMA team for SiC solar inverter design,” EE News Power,
January 21, 2020.
208 “Solar inverter from Fronius uses CoolSiC MOSFETs,” Evertiq, November 23, 2020.
209 Yole Développement, “Fuji Electric targets the best performance and reliability in the SiC
industry,” October 27, 2016.
210 “Semiconductor Leaders outlook on Silicon Carbide,” Electronics Media, April 2, 2019.
211 “High-power SiC module suits solar & industrial applications,” Rohm, September 7, 2015.
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industrial-applications
212 Maurizio Di Paolo Emilio, “New Rohm Fab Will Add Capacity for SiC Devices,” EE Times,
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November 19, 2021.
70
February 25, 2021.
February 25, 2021.
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February 25, 2021.
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carbide wafers to ST,” January 15, 2020.
222 Electronics Media, “Semiconductor Leaders outlook on Silicon Carbide,” April 2, 2019.
223 Marco Monti, “Automotive and Discrete Group: ST,” November 6, 2020.
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225 “STMicroelectronics to Acquire Majority Stake in Gallium Nitride innovator Exagan,” ST
Microelectronics, March 5, 2020.
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71
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72
Assignee Title Method PEMFC/MEA processed whole?
Method for operating a motor vehicle with a
Audi Aktiengesellschaft chemical Process PEMFC/fuel cell stack as whole
fuel cell device and a motor vehicle
Simplified process for leaching precious

Basf Catalysts Llc metals from fuel cell membrane electrode mechanical/chemical MEA pulverized to form powder
assemblies
Efficient process for previous metal recovery
Basf Catalysts Llc from fuel cell membrane electrode mechanical/chemical MEA ground to powder
assemblies
Process for recycling components of a PEM

Basf Catalysts Llc chemical/heat MEA as whole, chemical and heat processing
fuel cell membrane electrode assembly
Method for Recovering Catalytic Elements

Basf Catalysts Llc from Fuel Cell Membrane Electrode mechanical/chemical MEA converted to particulate, by grinding or granulating
Assemblies
Chengdu Guangming Paite Precious Method for recovering noble metal platinum
Metals Co., Ltd., Chengdu Guangming from proton exchange membrane of chemical MEA dissolved
Optoelectronics Co., Ltd. hydrogen fuel cell
Method for recycling membrane electrode

unit of fuel cell for use as alternative energy
source for vehicle, involves performing ultrasound/mechanical/ch
Daimler Ag MEA crushed into chips, flocs or flakes
filtration of laden with solvent to obtain emical
filter material, and recovering metals from
filter material
Method for recovering metal platinum from

Datasi Nantong Information Disassembling PEMFC, drying MEA, chemical processing of
platinum-carbon catalyst/microporous drying/chemical
Technology Co MEA as whole
polymer composite membrane
Datasi Nantong Information

Technology Co., Ltd. OR Datax Method for recovering metal platinum from drying/mechanical/chemic
disassembling PEMFC, grinding MEA, chemical processing
Nantong Information Technology Co., platinum-carbon catalyst al
73
Ltd.
Link Assignee Comments re: HF emissions/treatment
In certain embodiments, the disclosure includes processes that allow for the re-manufacture of new catalyst coated membranes (CCMs) from used CCMs extracted from failed fuel cell stacks. This may be
accomplished by removing the CCM from the stack, decontaminating the CCM to remove impurities, and then dissolving the ionomer component of the CCM to form a slurry of dissolved PFSA™
together with the Pt/C catalyst particles. The dissolution may, in certain embodiments, be done at increased pressure in an autoclave, for example. Preferred embodiments include a pressure of from 500 to
2000 psi. These two valuable ingredients are then separated, allowing the PFSA™ solution to be reprocessed into a new fuel cell membrane. Ideally the recovered catalyst (Pt/C) is redeposited on the re-
manufactured membrane so that a completely re-manufactured CCM is the final result. The same process would be used for an end-of-life Chlor-alkali membrane where the separation of the fiber
US7255798B2 Ion Power reinforcement and other solids are separated by similar methods.
US8101304B2 Umicore The hydrogen fluoride formed during the heat treatment of fluorine-containing components is bound by an inorganic additive so that no harmful hydrogen fluoride emissions occur.
a process for recycling fuel cell components containing fluorine-containing and precious metal-containing constituents: in this process, the fluorine-containing constituents are separated off from the
precious metal-containing constituents by treatment with a medium present in the supercritical state. Preference is given to using water as supercritical medium. After the fluorine-containing constituents
have been separated off, the precious metal-containing residues can be recovered in a recycling process without harmful fluorine or hydrogen fluoride emissions. The fluorine-containing constituents can
US7713502B2 Umicore likewise be recovered.
The bulk of the membrane electrode assembly is carbon-based; therefore, a standard method to recycle precious metals, including platinum, involves a combustion step to remove carbon material.
However, membrane electrode assemblies have high fluorine content due to polytetrafluoroethylene (PTFE) impregnated on the carbon fibers and from common polymer electrolyte membrane materials,
such as Nafion® (DuPont Co., Wilmington, Del.), which results in a large, undesirable discharge of HF upon combustion. Removal of HF gas involves scrubbing and dedicated equipment that can
US7635534B2 BASF Catalysts withstand the corrosive nature of HF gas. Isolating the combustion from existing infrastructure is recommended to localize maintenance needs caused by the effects of HF gas.
Regardless which vessel or apparatus is used to filter the solids from the leachate solution, the corrosive nature of the slurry requires materials of construction that can withstand corrosion. FIG. 5 illustrates
the corrosion of various materials, in percent weight loss, when exposed to chlorine. A Hastelloy C276 metal coupon was tested and corroded badly. Glass lined vessels, such as those fabricated by De
Ditrich and Pfaudler, have been shown to fare better when exposed to acid, but such vessels are typically limited to pressures of less than about 10 bar (150 PSIG). For example, according to vessel
manufacturer data, a 20% HCl mixture at 160° C. corrodes away about 20 mils per year from a glass liner. However, trace HF from the degraded perfluoropolymer membrane could attack the glass liner. The
addition of dispersed silica acts as a fluorine getter to protect the glass liner, and testing has shown that 100 ppm of SiO2 added to the mixture reduces the glass liner corrosion to about 2 mils per year at
US7709135B2 BASF Catalysts 160° C. Boric acid can also be used as a fluorine getter.
to optimize the recovery of catalytic elements from a fuel cell MEA, the efficiency of the leaching process can be improved based on parameters including, but not limited to, the leach medium, the
concentration and quantity of leach medium per weight of catalytic element sought to be recovered, and the temperature, pressure, and cycle time of the leach step or steps. In the experiments discussed
US8206682B2 BASF Corp herein, leaches have been performed in several reactor vessels, including open glass beakers and sealed fluorinated polymer vessels.
Korea Institute of Geoscience and As a recycling method of a waste electrode of a phosphoric acid type fuel cell that recovers phosphoric acid by wet method, recovers platinum group elements and silicon carbide (SiC), and does not emit
Mineral Resources waste,
leaching the waste electrode of the phosphoric acid type fuel cell to wet-recover the phosphoric acid;
an oxidation step of removing carbon by oxidizing the waste electrode of the phosphoric acid type fuel cell obtained by wet recovery of the phosphoric acid; and
Leaching the oxidized phosphoric acid type fuel cell waste electrode with a mixture of an acid compound and a halogen gas to separate the silicon carbide (SiC) and the platinum group element, and to
KR102284348B1 recover the silicon carbide (SiC) and the platinum group element
Korea Institute of Geoscience and As a recycling method of a waste electrode of a phosphoric acid type fuel cell that recovers phosphoric acid by dry method, recovers platinum group elements and silicon carbide (SiC), and does not emit
Mineral Resources waste,
dry-recovering the phosphoric acid by heat-treating the waste electrode of the phosphoric acid type fuel cell at a low temperature;
an oxidation step of removing carbon by oxidizing the waste electrode of the phosphoric acid type fuel cell obtained by dry recovery of the phosphoric acid; and
Leaching the oxidized phosphoric acid type fuel cell waste electrode with a mixture of an acid compound and a halogen gas to separate the silicon carbide (SiC) and the platinum group element, and to
KR102284346B1 recover the silicon carbide (SiC) and the platinum group element
JIANGSU YAOYANG NEW Since the fluorine proton exchange membrane releases hydrofluoric acid harmful to human body during combustion, calcium oxide must be used for adsorption to remove fluorine, thereby increasing
CN112421067B ENERGY TECHNOLOGY CO LTD the complexity of the process.
To efficiently recover a precious metal and a fluorine-containing polymer without using a solvent or the like from a membrane-electrode bonded element (MEA) of a used solid polymer electrolyte fuel cell.
SOLUTION: The membrane-electrode bonded element (MEA) is constituted of an electrolyte membrane comprising the fluorine-containing polymer having a sulfonic acid group, a conductive carrier which
is bonded to the electrolyte membrane and carries a catalyst metal, and a gas diffusing electrode (b) of which the major constituent material is a catalyst layer comprising a proton conductive polymer. The
precious metal and/or the fluorine-containing polymer having the sulfonic acid group are recovered from the membrane-electrode assembly (MEA) by this recycling method. The recycling method has two
processes, (1) a process in which the membrane-electrode assembly (MEA) is solidified, and the electrolyte is expanded to a degree wherein the plastic deformation of the catalyst layer after the solidification
becomes easier, (2) a process in which the membrane-electrode assembly (MEA) after the electrolyte has been expanded is solidified while imparting a stress. By these processes, the electrolyte membrane
comprising the fluorine-containing polymer having the sulfonic acid group, and the catalyst layer comprising the conductive carrier carrying the catalyst metal and the proton conductive polymer are
JP2005289001A Toyota Motor Co made easily separable.
Ashing plant for enriching noble metals from fluorine-containing materials, comprising
a thermal treatment chamber (1) having a refractory insulating lining on the inside of the thermal treatment chamber (1), and
an exhaust gas cleaning system,
whereby the insulating lining is resistant to hydrofluoric acid and
US20140056786A1 Heraeus Precious Metals GmbH the exhaust gas cleaning system comprises at least one or more acid scrubber(s) (3, 4) and at least one alkaline scrubber (5).
a method of recovering palladium from a palladium-containing material includes exposing the palladium-containing material to a leaching solution including an acid, an oxidizer, and iron ions (e.g., ferric
Battelle Energy Alliance LLC - ions (Fe3+), ferrous ions (Fe2+)) dissolved therein. The acid may include a source of halide ions. For example, the acid may include one or more of hydrochloric acid, hydrofluoric acid, hydrobromic acid, or
74
US20210047708A1 NOTE, funded by DOE hydroiodic acid.
A process for the recovery of a perfluorosulphonic acid ionomer from a component comprising a perfluorosulphonic acid ionomer is disclosed, the process comprising immersing the component
Johnson Matthey Hydrogen comprising the perfluorosulphonic acid ionomer in a solvent comprising an aliphatic diol and heating. Also disclosed is the use of the recovered perfluorosulphonic acid ionomer, for example in to prepared
US10964967B2 Technologies a proton conducting membrane or a catalyst ink.

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M A R K E T R E S E A R C H S T U DY

SiC POWER ELECTRONICS

2.0 Silicon Carbide Device Market............................................................................6

3.0 Silicon Carbide and Photovoltaics.....................................................................19

4.0 Silicon Carbide Supply Chain and Key Players..................................................32

Appendix A: Summary Tables of Selected SiC-based Inverters and Inverter Products

Materials Chemical Symbol Eg (eV)

2.1 Trends – Inverter Market is Led by Automotive Industry

Figure 1: SiC Penetration in EV powertrain

Figure 4: Roadmap for Automotive Power SiC / GAN Devices

Below is a summary of selected partnerships which demonstrates the extent to which

Developer/ SiC Device

Delphi also secured a $2.7 billion customer win

SiC traction inverters are engineered in-house by

*Not an exhaustive list

2.2 Market Size for Power Electronics by Vertical

Figure 5: SiC Market devices split by segment

Source: MarketsandMarkets. (September 2021).25

Table 3: Global SiC Market for Solar Power Systems

Reprinted with the permission of MarketsandMarkets 26

Reprinted with permission of MarketsandMarkets 28

2.3 Market Drivers

MarketsandMarkets identifies the following market drivers: 29

1. Power electronics continues to evolve as it is the key enabler for solving

Table 5: SiC Power Electronics Barriers

According to “PowerAmerica’s Strategic Roadmap for Next Generation Wide Bandgap

Table 6: Power America - SiC Power Electronics for Energy Challenges

1.2-1.7kV: PV string inverter, traction (e.g., EV/ • High cost

2.5 SiC Device Manufacturers

2.6 Movement Toward Vertical Integration is Shaping the Landscape

Companies including STMicroelectronics, Wolfspeed, onsemi, and Infineon Technologies,

Table 7: Companies with Integrated Device Manufacturer Model

1 An integrated device manufacturer (IDM) is a large-scale semiconductor company that designs,

0% 5% 10% 15% 20% 25% 30% 35% 40% 45%

Figure 6: SiC power devices market share of key players

3.0 Silicon Carbide and Photovoltaics

3.1 Solar Inverters

1. The deployment of rooftop solar PV systems has increased significantly in

3.1.1 Types of Inverters

Figure 8: Inverters Market Segmentation.

3.3 SiC Inverters for PV

The next big thing for SiC in solar is predicted to be in storage:70

• Utility-scale 210 mm modules starting from 550 W capacities offer several

Table 8: Summary of Selected SiC-based Devices for Solar Applications

Developer / Location / Device /

onsemi onsemi has 5 200V silicon The 1200V devices are

• SiC Hybrid modules

1700V 450mΩ TO-

3.5 Bill of Materials – SiC Solar Inverters

Figure 9: Modeled factory gate pricing of Alpha SiC inverter

Table 9: 50kW SiC Inverter Bill of Materials

50kW SiC Inverter

Module $0.35 16%

Source: Akanksha Singh et al. (National Renewable Energy Laboratory).87

Source: Akanksha Singh et al. (National Renewable Energy Laboratory, 2017).90

Reprinted with permission of MarketsandMarkets.93

Reprinted with permission of MarketsandMarkets.94

Reprinted with permission of MarketsandMarkets.95

Reprinted with permission of MarketsandMarkets.96