DTD113EK

NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet

lOutline
Parameter Value SMT3

VCC 50V OUT

IC(MAX.) 500mA IN

R1 1kW GND
DTD113EK
R2 1kW SOT-346 (SC-59)

lFeatures lInner circuit

1) Built-In Biasing Resistors, R1 = R2 = 1kW.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors（see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB113EK series
6) Lead Free/RoHS Compliant.

lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

lPackaging specifications
Package Basic
Taping Reel size Tape width
Part No. Package size ordering Marking
code (mm) (mm)
(mm) unit (pcs)
DTD113EK SMT3 2928 T146 180 8 3,000 F21

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© 2012 ROHM Co., Ltd. All rights reserved. 1/5 2012.07 - Rev.D
DTD113EK Data Sheet

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Values Unit
Supply voltage VCC 50 V
Input voltage VIN -10 to +10 V
Collector current IC*1 500 mA
Power dissipation PD *2 200 mW
Junction temperature Tj 150 °C
Range of storage temperature Tstg -55 to +150 °C

lElectrical characteristics(Ta = 25°C)

Parameter Symbol Conditions Min. Typ. Max. Unit
VI(off) VCC = 5V, IO = 100mA - - 0.5
Input voltage V
VI(on) VO = 0.3V, IO = 20mA 3.0 - -
Output voltage VO(on) IO / II = 50mA / 2.5mA - 0.1 0.3 V
Input current II VI = 5V - - 7.2 mA
Output current IO(off) VCC = 50V, VI = 0V - - 0.5 mA
DC current gain GI VO = 5V, IO = 50mA 33 - - -
Input resistance R1 - 0.7 1 1.3 kW
Resistance ratio R2/R1 - 0.8 1 1.2 -

VCE = 10V, IE = -50mA,

Transition frequency fT *1 - 200 - MHz
f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

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© 2012 ROHM Co., Ltd. All rights reserved. 2/5 2012.07 - Rev.D
DTD113EK Data Sheet

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage
(ON characteristics) (OFF characteristics)

OUTPUT CURRENT : IO [A]

INPUT VOLTAGE : VI(on) [V]

OUTPUT CURRENT : IO [mA] INPUT VOLTAGE : VI(off)[V]

Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current
II= 5.0mA 4.5mA 4.0mA 3.5mA
500 3.0mA

2.5mA
400
OUTPUT CURRENT : IO [mA]

DC CURRENT GAIN : GI

2.0mA
300

200 1.5mA

100
1.0mA

Ta=25ºC
0 0A
0 2 4 6 8 10
OUTPUT VOLTAGE : VO [V] OUTPUT CURRENT : IO [mA]

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© 2012 ROHM Co., Ltd. All rights reserved. 3/5 2012.07 - Rev.D
DTD113EK Data Sheet

lElectrical characteristic curves(Ta = 25°C)

Fig.5 Output voltage vs. output current

OUTPUT VOLTAGE : VO(on) [V]

OUTPUT CURRENT : IO [mA]

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© 2012 ROHM Co., Ltd. All rights reserved. 4/5 2012.07 - Rev.D
DTD113EK Data Sheet

lDimensions (Unit : mm)

D
SMT3 A

c
Q

HE
E

Lp
L1
A3
e b
x S A
e

e1
A

l1
A1

S
b2

Patterm of terminal position areas

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
A 1.00 1.30 - 0.051
A1 0.00 0.10 0 0.004
A3 0.25 0.01
b 0.35 0.50 0.014 0.02
c 0.09 0.25 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0.059 0.071
e 0.95 0.04
HE 2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.20 0.30 0.008 0.012
x - 0.10 - 0.004
y - 0.10 - 0.004

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
e1 2.10 0.08
b2 0.60 - 0.024
l1 - 0.90 - 0.035
Dimension in mm/inches

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© 2012 ROHM Co., Ltd. All rights reserved. 5/5 2012.07 - Rev.D
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