EE 312 PE Lec 1 Intro
EE 312 PE Lec 1 Intro
EE 312 PE Lec 1 Intro
Chap―1: Introduction
Reference Books:
2) Power Electronics by K.R. Varmah and Chikku
Abraham, Elsevier, 2014
3) Fundamental of Power Electronics by Robert W.
Ericson, Second Edition, 2005
4) Power Electronics by Daniel W. Hart MsGraw-
Hill 2010
Slides Prepared from—Chap—1—Introduction
Power Electronics Circuits, Devices, and Applications
Chapter 1 Introduction
1.1 Applications of Power Electronics
1.3 Types of Power Electronic Circuits
1.7 Characteristics and Specifications of Switches
1.7.1 Ideal Characteristics
1.7.2 Characteristics of Practical Devices
1.7.3 Switch Specifications
1.8 Power Semiconductor Devices
1.9 Control Characteristics of Power Devices
1.1 Applications of Power Electronics
Definition―Power electronics may be defined as the application of solid-state
electronics for the control and conversion of electric power.
One could also define power electronics as the art of converting electrical energy
from one form to another in an efficient, clean, compact, and robust manner for the
energy utilization to meet the desired needs.
1.1 Applications of Power Electronics
Air-conditioning Fans
Appliances Furnaces
Battery charger Hand power tools
Blowers Heat controls
Boilers High-frequency lighting
Cement kiln High-voltage dc (HVDC)
Electric vehicles Induction heating
Electromagnets Locomotives
Electromechanical electroplating Motor controls
Elevators Motor drives
1.3 Types of Power Electronic Circuits
• Power Diodes
• Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
• Bipolar -Junction Transistor (BJT)
• Insulated-Gate Bipolar Transistor (IGBT)
• Thyristors (SCR, GTO, MCT)
1.9 Control Characteristics of Power Devices
The power semiconductor switching devices can be classified on the basis of:
1. Uncontrolled turn-on and turn-off (e.g., diode);
2. Controlled turn-on and uncontrolled turn-off (e.g., SCR);
3. Controlled turn-on and -off characteristics (e.g., BJT, MOSFET, GTO, IGBT);
4. Continuous gate signal requirement (BJT, MOSFET, IGBT);
5. Pulse gate requirement (e.g., SCR, GTO);
6. Bipolar voltage-withstanding capability (SCR, GTO);
7. Unipolar voltage-withstanding capability (BJT, MOSFET, GTO, IGBT);
8. Bidirectional current capability (TRIAC);
9. Unidirectional current capability (SCR, GTO, BJT, MOSFET, IGBT, diode).
1.9 Control Characteristics of Power Devices