EXPERIMENT NO.

9
JFET DC SOURCE

I. OBJECTIVE:

1. To determine the effect of drain to source voltage V DS an drain current ID.

2. To determine the effect of reverse gate to source bias voltage V GS and ID.

3. To determine and plot the JFET Transform curve.

4. To determine and plot the drain characteristic of a JFET.

II. DISCUSSION:

The field effect transistor (FET) is three terminal devices used for a variety of applications that
match, to a large extend. The primary differences between two types of transistor is the fact BJT
transistors is a current controlled device while a JFET transistor is a voltage-controlled device as
shown in Fig 1.1.

ID

+
FET
= Fig.8.1
Voltage-Controlled
= Amplifiers

Controlled Voltage
(VGS)

For the JFET transistor the n-channel device will appear as prominent device. The basic
construction of the n-channel JFET is shown in Fig. 1.1.the type of the n-type channel is connected
through an ohmic contact to a terminal preferred to as the drain (d) while the lower end of the same
material is connected through an ohmic contact to a terminal preferred to as the source. (5) The
two P-type materials are connected together and to the gate. In essence, therefore, the drain and
source are connected to the ends of the n-type channel and gate to the two layers of p-type
materials.
JFET DRAIN CHARACTERISTICS

The effect of drain-to-source voltage (VDS) on ID in an n-type, channel JFET maybe

determined experimentally by the current of Fig.1.2 V GG serves as the gate bias supply and VDD as
the drain-voltage source. the voltmeter M2 measures VDS. The milliammeter M1 measure ID as VDD
is varied.

S2
CV M1

S1
+ EVM VDD
CV M2

VGG

Fig. 1.2(a)

S2
M1

+ EVM M2
VDD

Fig. 1.2(b)

Fig. 1.3 Shoe the variation of ID with VDS for VGS=0, the condition when the gate is
effectively shorted to two sources. Fig 1.2 (b). As VDS is increased from 0V to VP, called pinch
off voltage, ID increases that can be attained without destroying the JFET, the value I drain current
remains relatively constant at the I. JFET is normally operated on this interval V P to VDS max
WHERE NO change In ID occurs.
 Ic(mA)
(

9
IDSS

VF VDS(MAX)
Fig. 1.3 Drain characteristic of a JFET

Shorted to service another drain characteristic of a JFET when

gate is shorted to service another drain characteristic curve maybe
determines by reverse-biasing the gate. At some voltages, for this
condition ID will vary as shown in Fig 1.4. Other curve maybe
determined Ic(mA) by setting VGS at −1.0V, then at −1.5V, and so on.
VGS = -2V approximately.

VGS=0.1V
IDSS
VGS=-0.5V
VGS=-1.0V
VGS=-1.5V
VGS=-2.0V

VDS
VP VPS(MA
X)
Fig. 1.4 Family of Drain Characteristics of
a JFET

TRANSFER CHARACTERISTIC
 Another curve, the transfer curve is useful in evaluating the operating condition of a FET.
The curve is also plotted by using experimental circuit Fig. 1.6 (a) however, VDS is kept at some
constant value while VGS is varied, and ID is measured. The curve is

resembled in Fig 1.5 the transfer curve of Fig 1.5 is called a square-law curve, because of
squared term in the equation from which it is determined.

ID

=k
IDSS
VDS

VGS 0
-2 -1

Fig. 1.5 Transfer curve of JFET

III. MATERIALS AND EQUIPMENT

Two Independent variable

Voltage dc source
EVM, 0-10 milliammeter
2n5484 (n-channel JFET) semiconductor
Two SPST switches

IV. PROCEDURES:

Gate shorted to source, VGS = 0, VDD = VDS

1. Connect the circuit of Fig. 1.6b. Power off.

2. Set the output of VDD at 0v. Switch power on and record data in table 1.9 the
drain current ID.
3. a) Increase the output of VDD =0.5V, measure and record ID corresponding to
VGS = 0V.
 b) Reset VDD to each value instead in the table, measure and record its VDD for
each value.
4. Open S1 power off.

Gate is reversed-biased

5. Modify the Fig. 1.6 to confirm than a fig. 1.6a switches open.
6. Set both output of VDD and VGG to 0V. Switches closed power turn on.
7. Adjust VGG so that VGS = -0.25V. Level maintain for steps 8(a) and 8(b).
8. (a) Measure VDD for each value of VDS. Then measure and record ID in the table
1.9.
(b) Increase VDD for each value of VDS. Then measure and record ID in table
1.9.

S1
CV M1

+ EVM VDD
M2

VGG

Fig. 1.6
(a)

S1
M1

+ EVM M2
VDD
 Fig. 1.6
(b)
9. Reduce VDD =VDS = 0V, increase VGG and
VGS −0.8v maintain this level for step 10.
10. Repeat step 8(a) and 8(b) for each value of VDD =VDS listed in table 1.9
11. Repeat step (9) and (10) for each value of VGS and VDS listed until drain,
Current cut-off is reached.
12. Power turn off

TRANSFER CHARACTERISTIC

13. Switches open. Set VDD =15V, VGG = -2.5V, VDD constant set 15V.
14. Power on. Close S1 and S2, measure and record ID for each VGS values
15. (a) On graphing paper, draw the drain characteristic using your data.
 V. DATA AND RESULTS

ID, mA

VGS, V

VDS 0 -0.25 -0.5 -0.75 -1.0 -1.25 -1.5 -1.75 -2.0 -2.5
,V

0 0 0 0 0 0 0 0 0 0 0

1.0 2.658 1.820 1.049 0.486 0.136 1.531 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
2.0 2.855 1.857 1.068 0.495 0.139 1.554 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
3.0 2.908 1.890 1.088 0.504 0.142 0.142 0.00 mA 0.00 mA 0.00 mA 0.00 mA
4.0 2.960 1.924 1.108 0.513 0.145 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
5.0 3.012 1.958 1.128 0.522 0.147 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
6.0 3.063 1.992 1.147 0.532 0.149 2.665 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
7.0 3.116 2.027 1.166 0.542 0.152 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
8.0 3.168 2.061 1.186 0.55 0.155 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
9.0 3.221 2.094 1.206 0.560 0.156 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
10.0 3.27 2.128 1.226 0.568 0.16 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
11.0 3.324 2.16 1.245 0.579 0.162 1.776 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
12.0 3.375 2.196 1.265 0.588 0.165 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
13.0 3.427 2.231 1.284 0.597 0.167 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
14.0 3.478 2.265 1.304 0.608 0.171 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
15.0 3.53 2.295 1.323 0.616 0.172 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
16.0 3.581 2.329 1.343 0.625 0.176 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
17.0 3.634 2.366 1.361 0.636 0.178 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA
18.0 3.684 2.398 1.382 0.643 0.181 3.553 0.00 mA 0.00 mA 0.00 mA 0.00 mA
uA

Table 1.9
 VDD = 0
VDD = 0
0 0.25

-0.5 -0.75

-1.0 -1.25
-1.5 -1.75

-2.0 -2.5
 VDD = 1V
VDD = 0
0 0.25

-0.5 -0.75

-1.0 -1.25
-1.5 -1.75

-2.0 -2.5
 VDD = 2V
VDD = 0
0 0.25

-0.5 -0.75

-1.0 -1.25
-1.5 -1.75

-2.0 -2.5
 VDD = 3V
VDD = 0
0 0.25

-0.5 -0.75

-1.0 -1.25
-1.5 -1.75

-2.0 -2.5

VDD = 5V
VDD = 0
0 0.25
-0.5 -0.75

-1.0 -1.25

-1.5 -1.75
-2.0 -2.5

VDD = 5V
VDD = 0
0 0.25

-0.5 -0.75
-1.0 -1.25

-1.5 -1.75

-2.0 -2.5
 VDD = 6V
VDD = 0
0 0.25

-0.5 -0.75

-1.0 -1.25
-1.5 -1.75

-2.0 -2.5

VDD = 7V
VDD = 0
0 0.25
-0.5 -0.75

-1.0 -1.25

-1.5 -1.75
-2.0 -2.5

VDD = 8V
VDD = 0
0 0.25

-0.5 -0.75
-1.0 -1.25

-1.5 -1.75

-2.0 -2.5
 VDD = 9V
VDD = 0
0 0.25

-0.5 -0.75

-1.0 -1.25
-1.5 -1.75

-2.0 -2.5

VDD = 10V
VDD = 0
0 0.25
-0.5 -0.75

-1.0 -1.25

-1.5 -1.75

-2.0 -2.5
 VDD = 11V
VDD = 0
0 0.25

-0.5 -0.75
-1.0 -1.25

-1.5 -1.75

-2.0 -2.5
VDD = 12V
VDD = 0
0-0.75

-1.0 to -1.75
-2.0 to -2.5

VDD = 13V
VDD = 0
0-0.75
-1.0 to -1.75

-2.0 to -2.5
VDD = 14V
VDD = 0
0-0.75

-1.0 to -1.75
-2.0 to -2.5

VDD = 15V
VDD = 0
0-0.75
-1.0 to -1.75

-2.0 to -2.5
VDD = 16V
VDD = 0
0-0.75

-1.0 to -1.75
-2.0 to -2.5

VDD = 17V
VDD = 0
0-0.75

-1.0 to -1.75
-2.0 to -2.5
VDD = 18V
VDD = 0
0-0.75

-1.0 to -1.75
 -2.0 to -2.5

GRAPHICAL REPRESENTATIONS
VI. CONCLUSION:

VII. GUIDE QUESTION:

1. Determine JFET for BJT.

2. Explain the procedure you would use to verify experimentally that there is nom
gate current in the range over which a JFET is normally operated.
3. From your graph, identify VP. (a) what helps you identify VP? Defined.
4. From your graph, identify IDSS (b) what helps you identify IDSS? Defined.
5. Referring to your data, and your drain characteristic, compare the level of ID for
each value of VGS, what conclusion can you draw?
6. Which is more effective on controlling ID, VDS or VGS? Explain, referring to
your data.
7. What values of VGS cut off ID?
8. Solve for the transfer characteristic mathematically, compare with your obtained
transfer characteristics. Which is more accurate to use? Why?