Code No: R059010204

Set No. 1

I B.Tech Regular Examinations, May/Jun 2006 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering, Computer Science & Engineering, Electronics & Instrumentation Engineering, Bio-Medical Engineering, Information Technology, Electronics & Control Engineering, Computer Science & Systems Engineering, Electronics & Telematics, Electronics & Computer Engineering and Instrumentation & Control Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks 1. When T= (a) an electron is placed in a magnetic eld with a period of rotation 1012 sec so that the trajectory of an electron is a circle.

35.5 B

What is the radius described by an electron placed in a magnetic eld, perpendicular to its motion , when the accelerating potential is 900v, and B 0.01wb/m2 . (b)What is the time period of rotation? [8+8] [8]
3

2. (a) What is Hall eect? Derive an expression for Hall coecient?

(b) Calculate the conductivity of copper having density 8.9 gm/cm and mobility 34.8cm2 /v-sec. Atomic weight of copper is 63.57 while it has 1 valance electron per atom. Assume the value of M=1.661027 kg. [8] 3. (a) Dene the terms as referred to FWR circuit. i. ii. iii. iv. PIV average d.c. voltage RMS current ripple factor.

(b) A full wave rectier (FWR) supplies a load requiring 300V at 200mA. Calculate the transformer secondary voltage for i. a capacitor inpur lter using a capacitor of 10 F. ii. a choke input lter using a choke of 10 H and a capacitance of 10F. Neglect the resistance of choke. [8+8] 4. (a) With neat diagram explain the various components in an pmp transistor. [8] (b) Explain the input and output characteristics of a transistor in CB conguration. [8] 5. (a) Explain thermal instability. What are the factors aecting the stability factor. [4+4] (b) For the CE amplier circuit shown below, nd the percentage change in collector current if the transistor with hf e =50 is replaced by another transistor with hf e =150. Assume VBE =0.6V (gure 1) [8] 1 of 3

Code No: R059010204

Set No. 1

Figure 1: 6. (a) Draw the circuit diagram of RC coupled amplier and obtain its frequency and phase response. 3+3+2] (b) A common source FET amplier circuit shown in gure 2 with unbypassed RS has the following circuit parameters: Rd = 15k, Rs = 0.5k, Rg = 1M, rd = 5k, gm = 5 m mho and VDD = 20 V. Calculate AV and RO . [4+4]

Figure 2: 7. (a) Draw the circuit diagram of current shunt feedback and derive expressions for input and output resistances. [4+6] (b) An amplier with current sires feedback has the form shown in gure 3. The transistor has hf e =100, hie =2k, RC =470 and RE consists of two 100 resistors, one is bypassed by capacitor CE . Calculate the values of voltage gain and input resistance without feed back. [6] 2 of 3

Code No: R059010204

Set No. 1

Figure 3: 8. (a) Draw the circuit diagram of a RC phases shift oscillator using BJT. Derive the expression for frequency of oscillators. (b) Classify dierent type of oscillators based on frequency range. (c) Why RC oscillators are not suitable for high frequency applications. [8+4+4]

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Code No: R059010204

Set No. 2

I B.Tech Regular Examinations, May/Jun 2006 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering, Computer Science & Engineering, Electronics & Instrumentation Engineering, Bio-Medical Engineering, Information Technology, Electronics & Control Engineering, Computer Science & Systems Engineering, Electronics & Telematics, Electronics & Computer Engineering and Instrumentation & Control Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks 1. (a) Derive the expressions for acceleration, Velocity and displacement of a charged particle placed in an electric eld E (b) Two parallel plates of a capacitor are separated by 4cms. An electron is at rest initially at the bottom plate. Voltage is applied between the plates, which increases linearly from 0v to 8v in 0.1 m.sec .If the top plate is +ve, determine [8+8] i. The speed of electron in 40.n.sec ii. The distance traversed by the electron in 40.n.sec 2. (a) What do you understand by depetion region at p-n junction? What is the eect of forward and reverse biasing of p-n junction on the depletion region? Explain with necessary diagrams. (b) Explain the concept of tunneling with energy band diagrams. 3. (a) Dene the terms as referred to FWR circuit. i. ii. iii. iv. PIV average d.c. voltage RMS current ripple factor. [8]

(b) A full wave rectier (FWR) supplies a load requiring 300V at 200mA. Calculate the transformer secondary voltage for i. a capacitor inpur lter using a capacitor of 10 F. ii. a choke input lter using a choke of 10 H and a capacitance of 10F. Neglect the resistance of choke. [8+8] 4. (a) Describe a set up to obtain the output characteristics of a transistor in CE conguration. Indicate the various regions of operation on the output characteristics. [8] (b) Explain the principle of MOSFET in depletion mode. With neat sketches and o/p characteristics. [8] 1 of 2

Code No: R059010204

Set No. 2

5. (a) Draw a BJT xed bias circuit and derive the expression for the stability factor S. [3+5] (b) An NPN transistor with = 50 is used in a common emitter circuit with VCC = 10V,RC = 2k. The bias is obtained by connecting a 100K resistance from collector to base. Assume VBE = 0.7 V. Find i. the quiescent point and ii. the stability factor, S. [4+4]

6. (a) Draw the circuit diagram of common drain amplier and derive expressions for voltage gain and input resistance. [2+3+3] (b) Draw the equivalent circuit for CE and CC congurations subject to the restriction that the input is open circuited. Show that the output impedances of the two circuits are identical. [2+2+4] 7. (a) Dene Desensitivity. [3]

(b) For large values of D, what is Af ? What is the signicance of this result? [5] (c) An Amplier has a mid-frequency gain of 100 and a bandwidth of 200KHz. i. What will be the new bandwidth and gain if 5% negative feedback is introduced? ii. What should be the amount of negative feedback if the bandwidth is to be restricted to 1MHz? [8] 8. (a) Show that the gain of Wien bridge oscillator using BJT amplier must be at least 3 for the oscillations to occur. (b) In a transistorized Hartley oscillator the two inductances are 2mH and 20H while the frequency is to be changed from 950KHZ to 2050KHZ. Calculate the range over which the capacitor is to be vaired. [10+6]

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Code No: R059010204

Set No. 3

I B.Tech Regular Examinations, May/Jun 2006 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering, Computer Science & Engineering, Electronics & Instrumentation Engineering, Bio-Medical Engineering, Information Technology, Electronics & Control Engineering, Computer Science & Systems Engineering, Electronics & Telematics, Electronics & Computer Engineering and Instrumentation & Control Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks 1. (a) An electron is moving perpendicular to magnetic eld B. Derive the expression for radius R of the trajectory and period of rotation T (b) Derive the expression for the electro magnetic deection sensitivity in the case of the CRT. [8+8] 2. (a) Explain the process of break down of a pn-junction diode due to i. Avalanche eect ii. Zever eect [8]
0

(b) Find the concentration of holes and electrones in a p-type silicon at 300 K assuming resistivity as 0.02 cm. Assume p =475m2 /v-sec, ni =1.45 1010 per cm3 . [8] 3. (a) Explain why a bridge rectier is preferred over a centre-tap rectier. (b) Explain the necessity of a bleeder resistor. [4] [4]

(c) A diode has an internal resistance of 20 and 1000 load from a 110V rms source of supply. Calculate i. the eciency of rectication ii. the percentage regulation from no load to full load. [8]

4. (a) Draw the two transistor version of an SCR and explain its ring characteristics with this circuit. [8] (b) Explain the working principle of UJT with its characteristics. 5. (a) Draw two biasing circuits for an enhancement type MOSFET and explain. (b) The data sheet for an enhanced MOSFET gives ID =4.5mA at VGS =12V and VGS(th) =6V. Determine the value of ID for VGS =10V. [8+8] 6. (a) Draw the circuit diagram of common drain amplier and derive expressions for voltage gain and output resistance. [2+3+3] [8]

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Code No: R059010204

Set No. 3

(b) Draw the equivalent circuit for CE and CC congurations subject to the restriction that RL =0. Show that the input impedances for the two circuits are identical. [2+2+4] 7. (a) Draw the circuit diagram of voltage shunt feedback and derive expressions for input and output resistances. [4+6] (b) An Amplier has an open loop gain of 800 and a feedback ratio of 0.05. If the open loop gain changes by 20% due to temperature, nd the percentage change in closed loop gain. [6] 8. (a) Derive an expression for frequency of oscillation of transistorized Colpitts oscillator. (b) A quartz crystal has the following constants. L=50mH, C1 =0.02PF, R=500 and C2 =12PF. Find the values of series and parallel resonant frequencies. If the external capacitance across the crystal changes from 5PF to 6PF, nd the change in frequency of oscillations. [8+8]

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Code No: R059010204

Set No. 4

I B.Tech Regular Examinations, May/Jun 2006 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering, Computer Science & Engineering, Electronics & Instrumentation Engineering, Bio-Medical Engineering, Information Technology, Electronics & Control Engineering, Computer Science & Systems Engineering, Electronics & Telematics, Electronics & Computer Engineering and Instrumentation & Control Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks 1. (a) When an electron is placed in a magnetic eld with a period of rotation T = 35.5 1012 sec so that the trajectory of an electron is a circle. B (b) What is the radius described by an electron placed in a magnetic eld, perpendicular to its motion , when the accelerating potential is 900v, and B 0.01wb/m2 . What is the time period of rotation? [8+8] 2. (a) Explain the process of break down of a pn-junction diode due to i. Avalanche eect ii. Zever eect [8]

(b) Find the concentration of holes and electrones in a p-type silicon at 3000 K assuming resistivity as 0.02 cm. Assume p =475m2 /v-sec, ni =1.45 1010 per cm3 . [8] 3. (a) Dene the terms as referred to FWR circuit. i. ii. iii. iv. PIV average d.c. voltage RMS current ripple factor.

(b) A full wave rectier (FWR) supplies a load requiring 300V at 200mA. Calculate the transformer secondary voltage for i. a capacitor inpur lter using a capacitor of 10 F. ii. a choke input lter using a choke of 10 H and a capacitance of 10F. Neglect the resistance of choke. [8+8] 4. (a) Describe a set up to obtain the output characteristics of a transistor in CE conguration. Indicate the various regions of operation on the output characteristics. [8] (b) Explain the principle of MOSFET in depletion mode. With neat sketches and o/p characteristics. [8]

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Code No: R059010204

Set No. 4

5. (a) Draw a BJT self bias circuit and obtain the expression for the stability factor S. [3+5] (b) A Germanium transistor is used in a self biasing circuit conguration as shown below with Vcc = 16V, Rc = 1.5k and = 50. The operating point desired is VCE = 8V and IC = 4mA. If a stability factor S = 10 is desired, calculate values of R1 , R2 and RE of the circuit. ( gure 1) [3+2+3]

Figure 1: 6. (a) Draw a low frequency equivalent circuit for a CC amplier and derive the the relations for the current gain, voltage gain and input resistance in terms of h-parameters. [2+6] (b) In the common collector circuit (gure2), the transistor parameters are hic =1.2K and hf c = -101. Calculate input and output resistances, voltage gain and current gain. [8] 7. (a) What do you understand by feedback in ampliers? Explain the terms feedback factor and open loop gain. [4+2+2] (b) Calculate the gain, input impedance, output impedance of voltage series feedback amplier having A=300, Ri =1.5K,RO =50K and =1/12. [8] 8. (a) Show that the gain of Wien bridge oscillator using BJT amplier must be at least 3 for the oscillations to occur. 2 of 3

Code No: R059010204

Set No. 4

Figure 2: (b) In a transistorized Hartley oscillator the two inductances are 2mH and 20H while the frequency is to be changed from 950KHZ to 2050KHZ. Calculate the range over which the capacitor is to be vaired. [10+6]

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