HMSR-DA series

Integrated Current Sensor HMSR-DA series

Description
The HMSR DA is a new generation of Integrated Current Sensor from LEM. HMSR DA embedders a micro
magnetic core for enhanced accuracy to reach best in class performances. With new hall cells over previous
generation it improves resolution and accuracy.
The output of this sensor is a sigma delta bitstream which can be exploited by the end user by putting the desired
filter behind.
This product family provides a robust, compact, and very accurate solution for measuring DC and AC currents in
all highly demanding, switching power applications for commercial, industrial. HMSR is a micro core based open
loop sensor with a reinforced insulation and overcurrent detections (user configurable and factory set). These
features make the device suitable for high voltage applications requiring high precision and strong immunity
against external field.
The primary conductor (pins 1 and 8) has very low electrical resistance and dedicated pads designed to withstand
against high surge currents such as lightning strikes.
HMSR DA is measuring the magnetic field generated by the current flowing in the copper primary path of the
device. By using a micro magnetic core, HMSR is immune to the external fields, making the device well suited for
power electronic applications with high levels of disturbance.
The reinforced isolation between primary (pins 1 and 8) and secondary (pins 9 to 15) offers the HSMR, a small,
cost effective solution to measure high side current compared to resistive isolated solutions.

Main features & Advantages

• Industrial Typical applications

• Open loop multi-range current sensor: 75A • Servo drives
• Low electrical resistance 0.76 mΩ • Robotics
• Dual supply voltage 5V and 3.3V • Digital drives
• Bitsream output from 2nd order sigma-delta
modulator (PDM) Pulse density Modulation
• Overcurrent detection Standards
• Low power consumption
• IEC 61800-5-1: 2007
• Integrated micro core for high robustness • IEC 62109-1: 2010
against external interference. • IEC 62368-1: 2018 (replacing IEC 60950-1)
• Galvanic separation between primary and • UL 1577: 2014 (pending)
secondary with 8mm of dCp/dCl
• Reinforced insulation capability
• Lightning impulse current ≤ 20 kA.
• Small footprint with surface mount PCB
mounting

Figure 1 HMSR custom package - SOIC 16 compatible

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 HMSR-DA series

Application circuit and pinout

Figure 3 Application circuit Figure 2 HMSR DA package

Pins Name Description

number
1 IP+ Input of the primary current
8 IP − Output of the primary current
9 OCD Internal OCD
10 P7 P7
11 P6 P6
12 P1 P1
13 P2 P2
14 GND Ground terminal
15 UC Supply voltage
16 P5 P5

Output Mode P6 P7 P1 P2
0 2W CMOS CLK Out NC NC CLK Dout

1 2W RS 422 MANCHESTER
________ ______ _____

NC NC Dout
Dout

2 4W LVDS CLK Out

________ ______ _____ ________ ______ _____

CLK Dout
CLK Dout

3 2W LVDS MANCHESTER
________ ______ _____

NC NC Dout
Dout

4 4W RS 422 CLK Out

________ ______ _____ ________ ______ _____

CLK Dout
CLK Dout

8 2W CMOS CLK In NC NC CLK Dout

A 4W LVDS CLK In
________ ______ _____ ________ ______ _____

CLK Dout
CLK Dout

C 4W RS 422 CLK In (Mode C)

________ ______ _____ ________ ______ _____

CLK Dout
CLK Dout

D 4W RS 422 In (Mode D)
________ ______ _____ ________ ______ _____

CLK Dout
CLK Dout

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 HMSR-DA series
Selection guide
HMSR DA 75-30 – 51000
Delay of the sensor. Default value 0 for 2us delay. Higher delays, please
contact LEM.

OCD masking time. Default value 0 for 0.5 us. Higher values possible,
contact LEM for more options

OCD level. Default value 0 for 3 x IPN. Other ratios available, contact LEM
for more options.

Output mode: (Bipolar)

0 2W CMOS CLK Out
1 2W RS 422 Manchester
2 4W LVDS CLK Out
3 2W LVDS Manchester
4 4W RS 422 CLK Out
8 2W CMOS CLK In
A 4W LVDS CLK In
C 4W RS 422 CLK In (mode C)
D 4W RS 422 CLK In (mode D)

Supply Voltage UC:

5 -> 5V
3 -> 3.3V

Peak current/Nominal current. Standard options: 15/6, 20/8,

25/10, 37/15, 50/20, 75/30. Other values possible, contact LEM
for more options

Standard products:

Current
Nominal
measurement Supply Temperature
Product name current Output Mode
range Voltage [Uc] range [°C]
[Arms]1
[Apeak]
HMSR DA 15/6 – 50000 ± 15 ±6 5V 2W CMOS CLK Out
HMSR DA 15/6 – 54000 ± 15 ±6 5V 4W RS 422 CLK Out
HMSR DA 25/10 – 50000 ± 25 ±10 5V 2W CMOS CLK Out
HMSR DA 25/10 – 54000 ± 25 ±10 5V 4W RS 422 CLK Out
-40 to 125°C
HMSR DA 37/15 – 50000 ± 37.5 ±15 5V 2W CMOS CLK Out
HMSR DA 37/15 – 54000 ± 37.5 ±15 5V 4W RS 422 CLK Out
HMSR DA 75/30 – 50000 ± 75 ±30 5V 2W CMOS CLK Out
HMSR DA 75/30 – 54000 ± 75 ±30 5V 4W RS 422 CLK Out

1 Trimmings at LEM are done at this nominal current.

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 HMSR-DA series
Block diagram

Figure 4 Block diagram HMSR DA

External circuit Min Typ Max Unit

example
Rocd 4.7 50 kΩ
Csupply 47 100 nF
CLOAD 5 pF

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 HMSR-DA series
Absolute maximum ratings

Parameter Symbol Unit Min Typ Max Comment

Ambient operating temperature TA °C -40 125
Ambient storage temperature TA st °C -55 165
Resistance of the primary @TA = 25°C RP mΩ 0.76
Thermal resistance junction to case2 Rth JC K/W 18 TBC
Thermal resistance junction to ambient2 Rth JA K/W 19 TBC
Mass m g 1.4

Absolute maximum ratings apply at 25 °C unless otherwise noted.

Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum ratings for extended periods may degrade reliability.

Environmental and mechanical characteristics

Parameter Symbol Unit Value
Maximum supply voltage UC max V 7.5
Maximum voltage on other pins Umax V 7.5
Electrostatic discharge voltage (HBM - Human Body Model) UESD HBM kV 2
Electrostatic discharge voltage (CDM - Charged Device Model) UESD CDM V 500
Maximum junction temperature TJ max °C 150

2 Done with LEM evaluation board PCB 0325 described on later paragraph.

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 HMSR-DA series
Insulation characteristics
Parameter Symbol Unit Value Comment
RMS voltage for AC insulation test, 50Hz, 1min
Ud kV 4.953 According to IEC 62368-1
According to IEC 62109-1, IEC
Impulse withstand voltage 1.2/50 µs UNI kV 8
61800-5-1
RMS recurring peak voltage (Partial discharge According to IEC 62109-1, IEC
UPD V 1556
test) 61800-5-1
According to IEC 62109-1, IEC
RMS inception voltage (Partial discharge test) Ut inception V 2063
61800-5-1
Ut According to IEC 62109-1, IEC
RMS extinction voltage (Partial discharge test) V 1650
extinction 61800-5-1
Clearance (pri. -sec.) dCl mm 8 Shortest distance through air
Creepage distance (pri. -sec.) dCp mm 8 Shortest path along device body
Case material V0 According to UL94, flammability
Grade requirements mass
Comparative tracking index CTI 600
compound

Working voltage according to IEC 62368-1

Working voltages PD 2 Standards

RMS voltage 1600
Basic insulation IEC 62368-1
Peak or DC voltage 2262V
(replacing IEC 60950-1)
RMS voltage 800
Reinforced insulation
Peak or DC voltage 1131V

Rated insulation voltage according to IEC 61800-5-1 / IEC 62109-1

Rated insulation voltage OV II / PD 2 OV III/ PD 2 Standards

RMS voltage 1520 / > 1000 1000 / 1000
Basic isolation IEC 61800-5-1
Peak or DC voltage NA / 1500 NA / 1500
/ IEC 62109-1
RMS voltage 800 / 800 600 / 600
Reinforced isolation
Peak or DC voltage NA / 1131 NA / 848

3 Tested at 4.95kV in production, Characterization ongoing 5.66kV in the lab according IEC 62368-1.

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 HMSR-DA series
Common electrical data (independent of sensitivity)
At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

4.5 5 5.5
DC supply voltage UC V
3.14 3.3 3.47
Density of ones @ IP = 0 A Dout % 50

Density of ones @ IP = ± IP N 50 ±16

Over operating temperature range

Density of ones @ IP = ± IP M 50 ±40

Maximum output current

IOmax mA 25
source
Maximum input current sink IImax mA 50

Electrical offset DOE % -0.1 0.1 Relative to Dout = 50 %

Relative to 25 °C
Temperature coefficient of S TCS ppm/K -200 200
−40 °C ... 125 °C
Linearity error 0 ... IP N % of IP N −0.5 0.5
εL
Linearity error 0 ... IP M % of IP M −0.5 0.5

Magnetic offset current after

overload (IP > 500 A) referred to IOM A 0.18
primary
product only
Delay time @ 10 % of IP N tD10 ms 1.5
(without filter)
product only
Delay time @ 90 % of IP N tD90 ms 2
(without filter)

Frequency bandwidth (−3 dB) BW kHz 300 product only

(without filter) 3)

DC current consumption VS output mode

Typical values with CLOAD = 5pF

Output mode Symbol Unit Unloaded With = RL100 Ω Comment

0 Ic mA 24 - 2W CMOS CLK Out
1 Ic mA 24 53 2W RS 422 MANCHESTER
2 Ic mA - 37 4W LVDS CLK Out
3 Ic mA - 30 2W LVDS MANCHESTER

4 Ic mA 25 82 4W RS 422 CLK Out

8 Ic mA 24 - 2W CMOS CLK In

A Ic mA - 30 4W LVDS CLK In
C Ic mA 24 53 4W RS 422 CLK In (Mode C)
D Ic mA 24 53 4W RS 422 In (Mode D)

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 HMSR-DA series

Electrical data HMSR DA 75/30

At TA = 25 °C, UC = +5 V, unless otherwise noted

(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 30
Primary current, measuring
IPM A −75 75
range
Nominal sensitivity SN %/A 0.533 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −187.5 187.5
to primary
Temperature coefficient of DO E Relative to 25 °C
TCDO E µPD /K −15 15
referred to primary −40 °C ... 125 °C
Temperature coefficient of IO E Relative to 25 °C
TCIO E mA/K −2.81 2.81
referred to primary −40 °C ... 125 °C
Bit 13 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

Electrical data HMSR DA 50/20

At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 20
Primary current, measuring
IPM A −50 50
range
Nominal sensitivity SN %/A 0.8 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −125 125
to primary
Temperature coefficient of DO E Relative to 25 °C
TCDO E µPD /K −15 15
referred to primary −40 °C ... 125 °C
Temperature coefficient of IO E Relative to 25 °C
TCIO E mA/K −1.88 1.88
referred to primary −40 °C ... 125 °C
Bit 12.5 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

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 HMSR-DA series
Electrical data HMSR DA 37/15
At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 15
Primary current, measuring
IPM A −37.5 37.5
range
Nominal sensitivity SN %/A 1.067 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −94 94
to primary
Temperature coefficient of DO E Relative to 25 °C
TCDO E µPD /K −15 15
referred to primary −40 °C ... 125 °C
Temperature coefficient of IO E Relative to 25 °C
TCIO E mA/K −1.41 1.41
referred to primary −40 °C ... 125 °C
Bit 12.5 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

Electrical data HMSR DA 25/10

At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 10
Primary current, measuring
IPM A −25 25
range
Nominal sensitivity SN %/A 1.6 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −62.5 62.5
to primary
Temperature coefficient of DO E Relative to 25 °C
TCDO E µPD /K −15 15
referred to primary −40 °C ... 125 °C
Temperature coefficient of IO E Relative to 25 °C
TCIO E mA/K −0.94 0.94
referred to primary −40 °C ... 125 °C
Bit 12.5 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

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 HMSR-DA series

Electrical data HMSR DA 20/8

At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 8
Primary current, measuring
IPM A −20 20
range
Nominal sensitivity SN %/A 2 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −50 50
to primary
Temperature coefficient of DO E Relative to 25 °C
TCDO E µPD /K −15 15
referred to primary −40 °C ... 125 °C
Temperature coefficient of IO E Relative to 25 °C
TCIO E mA/K −0.75 0.75
referred to primary −40 °C ... 125 °C
Bit 12 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

Electrical data HMSR DA 15/6

At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 6
Primary current, measuring
IPM A −15 15
range
Nominal sensitivity SN %/A 2.67 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −37.5 37.5
to primary
Temperature coefficient of DO E Relative to 25 °C
TCDO E µPD /K −15 15
referred to primary −40 °C ... 125 °C
Temperature coefficient of IO E Relative to 25 °C
TCIO E mA/K −0.56 0.56
referred to primary −40 °C ... 125 °C
Bit 12 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

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 HMSR-DA series
Electrical data HMSR DA 10/4
At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 4
Primary current, measuring
IPM A −10 10
range
Nominal sensitivity SN %/A 4 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −25 25
to primary
Temperature coefficient of DO E −25 25 Relative to 25 °C
TCDO E µPD /K
referred to primary TBC TBC −40 °C ... 125 °C
Temperature coefficient of IO E −0.63 0.63 Relative to 25 °C
TCIO E mA/K
referred to primary TBC TBC −40 °C ... 125 °C
Bit 11 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

Electrical data HMSR DA 5/2.5

At TA = 25 °C, UC = +5 V, unless otherwise noted
(see Min, Max, typ, definition paragraph in page 23).

Parameter Symbol Unit Min Typ Max Comment

Primary nominal current IPN A 2
Primary current, measuring
IPM A −5 5
range
Nominal sensitivity SN %/A 8 16% @ IP N
TBC based on
Sensitivity error εS % −0.75 0.75
characterization
Sum of sensitivity and linearity TBC based on
error @ TA = 25 °C ε SL25 % of IPM TBC TBC
characterization
Electrical offset current referred
IOE mA −37.5 37.5
to primary
Temperature coefficient of DO E −45 45 Relative to 25 °C
TCDO E µPD /K
referred to primary TBC TBC −40 °C ... 125 °C
Temperature coefficient of IO E −0.57 0.57 Relative to 25 °C
TCIO E mA/K
referred to primary TBC TBC −40 °C ... 125 °C
Bit 12 I=0
Effective number of Bits ENOB
Filter SINC 3 OSR 256
TBC based on
Total accuracy over temp εtot % of IPM TBC
characterization
Total accuracy over lifetime % of IPM TBC TBD after ageing tests

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 HMSR-DA series
Output mode characteristics

Mode 0 and 8: 2 Wire CMOS

For all allowed capacitive range.

● Timing for mode 0

Parameter Symbol Unit Min Typ Max Comment
SCLK period tSCLK ns 89 93.5 98 For internal clock
Temperature coefficient of TCTCLK ppm/K −400 0 400 −40 °C … 105 °C
clock period
Clock high time tH ns 0.45 × 46.75 0.55 ×
tSCLK tSCLK
Clock falling edge to data delay tD ns −25 0 25

● Timing for mode 8

Parameter Symbol Unit Min Typ Max Comment
Clock high time tH ns 0.45 × 0.5 × 0.55 ×
TCLK TCLK TCLK
Clock falling edge to data delay tD ns 13 0 49

In mode 8, you can use external clock from 5 to 10.1 MHz or from 11.4 to 12.5 MHz.

● Levels
Parameter Symbol Unit Min Typ Max Comment
Low voltage UL V 0.4 with Iout L = 4 mA,
unloaded
High voltage UH V UC − with Iout H = −4 mA,
0.4 unloaded

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 HMSR-DA series
Mode 1: 2 Wire RS 422 Manchester (ANSI/TIA/EIA-422-B and IEEE 802.3)

For all allowed capacitive range, RL can be 100 Ohm.

Logical 1 is coding on a rising edge on Dout.

● Timing for mode 1

Parameter Symbol Unit Min Typ Max Comment
SCLK period tSCLK ns 89 93.5 98 fCLK= 10.7 MHz ±5 %
Temperature coefficient of TCTCLK ppm/K −400 0 400 −40 °C … 105 °C
clock period

● Levels
Parameter Symbol Unit Min Typ Max Comment
Low voltage UL V 0.4 with Iout L = 4 mA,
unloaded
High voltage UH V UC − with Iout H = −4 mA,
0.4 unloaded

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 HMSR-DA series
Mode 3: 2 Wire LVDS Manchester (ANSI/TIA/EIA-644-A and IEEE 802.3)
For all allowed capacitive range, recommended load resistor RL = 100 Ohm.

Logical 1 is coding on a rising edge on Dout.

● Timing for mode 3

Parameter Symbol Unit Min Typ Max Comment

SCLK period tSCLK ns 89 93.5 98 fCLK= 10.7 MHz ±5 %
Temperature coefficient of clok TCTCLK ppm/K −400 0 400 −40 °C … 105 °C
period

● Levels
Parameter Symbol Unit Min Typ Max Comment
Low voltage UL mV (−3.5 Relative to Uclk CM
× RL)
/2
High voltage UH mV (3.5 × Relative to Uclk CM
RL) /
2
Clock common mode voltage UCLK CM V 1.25

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 HMSR-DA series
Mode 2 and A: 4 Wire LVDS (ANSI/TIA/EIA-644-A)

For all allowed capacitive range, recommended load resistor RL = 100 Ohm.

● Timing for mode 2

Parameter Symbol Unit Min Typ Max Comment

SCLK period tSCLK ns 89 93.5 98 For internal clock
Temperature coefficient of clok TCTCLK ppm/K −400 0 400 −40 °C … 105 °C
period
Clock high time tH ns 0.45 × 46.75 0.55 ×
TCLK TCLK
Clock falling edge to data delay tD ns −25 0 25 For internal clock

● Timing for mode A

Parameter Symbol Unit Min Typ Max Comment

Clock high time tH ns 0.45 × 0.5 × 0.55 ×
TCLK TCLK TCLK
Clock falling edge to data delay tD ns 13 0 49

In mode A, you can use external clock from 5 to 10.1 MHz or from 11.4 to 12.5 MHz.

● Levels

Parameter Symbol Unit Min Typ Max Comment

Low voltage UL mV (−3.5 Relative to Uclk CM
× RL)
/2
High voltage UH mV (3.5 × Relative to Uclk CM
RL) /
2
Clock common mode voltage UCLK CM V 1.25

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 HMSR-DA series
Mode 4, C and D: 4 Wire RS 422 (ANSI/TIA/EIA-422-B)

For all allowed capacitive range, RL can be 100 Ohm.

● Timing for mode 4

Parameter Symbol Unit Min Typ Max Comment
SCLK period tSCLK ns 89 93.5 98 For internal clock
Temperature coefficient of clok TCTCLK ppm/K −400 0 400 −40 °C … 105 °C
period
Clock high time tH ns 0.45 × 46.75 0.55 ×
TCLK TCLK
Clock falling edge to data delay tD ns −25 0 25 For internal clock

● Timing for mode C and D

Parameter Symbol Unit Min Typ Max Comment
Clock high time tH ns 0.45 × 0.5 × 0.55 ×
TCLK TCLK TCLK
Clock falling edge to data delay tD ns 13 0 49

In mode C and D, you can use external clock from 5 to 10.1 MHz or from 11.4 to 12.5 MHz.

● Levels

Parameter Symbol Unit Min Typ Max Comment

Low voltage UL V 0.4 with Iout L = 4 mA,
unloaded
High voltage UH V UC − with Iout H = −4 mA,
0.4 unloaded
Clock common mode voltage in UCLK CM V 0.35 × 0.75 ×
mode C UC UC
Clock common mode voltage in UCLK CM V 0
mode D

Mode D fully compatible with RS 422 standard (ANSI/TIA/EIA-422-B).

Capacitors on CLK and CLK signals needed to avoid common mode voltage.

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 HMSR-DA series

Overcurrent detection (OCD)

Overcurrent detection is a feature included on HMSR DA product in order to detect high peaks of currents
happening during operation.

Parameter Symbol Unit Min Typ Max Comment

Internal OCD
Internal OCD detection 3.0 x
II OCD Th A (TBC)
threshold ±IPN
ε I OCD
Internal OCD threshold error % ±8 Referred to IP N
Th
Internal OCD output on Ron I Open drain output, active
 10 50
resistance OCD low
Internal OCD output hold thold I
s 8 10 12 (TBC)
time OCD
Internal OCD delay time tD I OCD s 0.5 (TBC)

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 HMSR-DA series

Internal OCD behaviour:

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 HMSR-DA series
Thermal characteristics
When designing a system containing a current sensor, self-heating due to the flow of the current should be
considered. When a current pass through, the sensor’s temperature will increase, and this may affect its
performances. This change on temperature will depend on the current profile, PCB layout, cooling techniques and
copper thickness. The following plots show an example of different thermal responses of the HMSR DA sensor
when used on an evaluation LEM board.

Figure 5 Continuous current vs temperature

Figure 5 shows the continuous RMS current that HMSR DA is capable of measuring depending on the maximum
expected temperature of the system.

Figure 6 Measuring range vs temperature

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 HMSR-DA series

Finally, Figure 7 represents the maximum

measurement range (peak current) versus the temperature.

The maximum temperature should be evaluated on the final system where the current sensor is integrated on the
real application. This temperature should never exceed the maximum junction temperature as shown on the
previous paragraphs.

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 HMSR-DA series
Sum of sensitivity and linearity error

Figure 7 Sum of sensitivity and linearity error

Effective Resolution versus Decimation Ratio

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 HMSR-DA series
Delay time versus OSR

Frequency bandwidth (-3dB) versus OSR

Drifts over temperature

Work in progress with PV tests….

Total accuracy Full scale

Work in progress with PV tests….

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 HMSR-DA series

Evaluation board PCB 0325

All the above results are based on a LEM evaluation board.

This evaluation board HMSR-DA Demokit is available at our distributors or direct sales (please contact us).

Description:
To be added

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 HMSR-DA series
Terms and definitions
Definition of typical, minimum and 𝐼OE = 𝐼P(3) + 𝐼P(5)
2
maximum values
Minimum and maximum values for specified limiting 𝐼 P(3) − 𝐼P(5)
and safety conditions have to be understood as 𝐼OM =
such as well as values shown in “typical” graphs. 2
On the other hand, measured values are part of a The magnetic offset current IOM is the consequence
statistical distribution that can be specified by an of a current on the primary side (“memory effect” of
interval with upper and lower limits and a probability the transducer’s ferro-magnetic core). It is measured
for measured values to lie within this interval. using the following primary current cycle. IOM
Unless otherwise stated (e.g. “100 % tested”), the depends on the current value IP ≥ IPN.
LEM definition for such intervals designated with
“min” and “max” is that the probability for values of KOL: Overload factor
samples to lie in this interval is 99.73 %.
For a normal (Gaussian) distribution, this
corresponds to an interval between −3 sigma and
+3 sigma. If “typical” values are not obviously mean
or average values, those values are defined to
delimit intervals with a probability of 68.27 %,
corresponding to an interval between −sigma and
+sigma for a normal distribution.
Typical, maximal and minimal values are
determined during the initial characterization of the
product.

Total error referred to primary Figure 9 Current cycle used to measure magnetic and
The total error εtot is the error at ±IP N, relative to the electrical offset (transducer supplied)
FS (Full Scale). It includes all errors mentioned
below: Sensitivity and linearity
To measure sensitivity and linearity, the primary
• the electrical offset IO E current (DC) is cycled from 0 to IP, then to −IP and
• the magnetic offset IO M back to 0 (equally spaced IPN/10 steps). The
• the sensitivity error εS sensitivity S is defined as the slope of the linear
• the linearity error εL (to IPN) regression line for a cycle between ±IPN.

The linearity error εL is the maximum positive or

negative difference between the measured points
and the linear regression line, expressed in % of IPN.

Delay times
The delay time tD 10 @ 10 % and the delay time tD 90
@ 90 % with respect to the primary are shown in the
next figure.
Both slightly depend on the primary current di/dt.
They are measured at nominal current.

Figure 8 Total error

Electrical offset referred to primary

Using the current cycle shown in figure 7, the
electrical offset current IOE is the residual output
referred to primary when the input current is zero.

Magnetic offset referred to primary

Figure 10 Delay times

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 HMSR-DA series
PCB footprint (in mm)

Figure 11 PCB footprint

Soldering on PCB

Figure 12 Soldering profile

Soldering remarks:
• HMSR is qualified MSL1 for storage and mounting purposes.
• Per JEDEC J-STD-020E for packages more than 2.5 mm thick per table 4.2 (Pb-Free Process) of the
specification.
• Best practice is to use 7 zones or greater conventional reflow system, limiting the time at reflow temperature
as indicated in profile above.
• Rework not recommended.

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 HMSR-DA series
Dimensions (in mm)

Mechanical characteristics : General tolerance ±0.15 mm

Remark: Dout is greater than 50% when IP flows in the direction of arrow (pin 1 to pin 8).

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 HMSR-DA series
Tape and Reel (in mm)

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 HMSR-DA series
Safety

⚠
Caution

This transducer must be used in electric/electronic equipment with respect to applicable standards and safety
requirements in accordance with the manufacturer’s operating instructions.

Caution, risk of electrical shock

This transducer must be used in limited-energy secondary circuits according to IEC 62368-1.
When operating the transducer, certain parts of the module can carry hazardous voltages and high currents (e.g.
power supply, primary conductor). Ignoring this warning can lead to injury and or/or cause serious damage.
This transducer is a build-in device, whose hazardous live parts must be inaccessible after installation. A protective
enclosure or additional shield could be used. Main supply must be able to be disconnected.

Although LEM applies utmost care to facilitate compliance of end products with applicable regulations during LEM
product design, use of this part may need additional measures on the application side for compliance with
regulations regarding EMC and protection against electric shock. Therefore, LEM cannot be held liable for any
potential hazards, damages, injuries or loss of life resulting from the use of this product.

ESD susceptibility

This product is susceptible to be damaged from an ESD event and the personnel and workspace should be
grounded when handling it.

Page 28 of 28
22nd Oct 2021 / version 0.2 LEM reserves the right to carry out modifications on its transducers,
to improve them without prior notice