BSM181R 1
BSM181R 1
BSM181R 1
BSM 181 R
VDS = 100 V
ID = 200 A
R DS(on) = 8.5 mΩ
● Power module
● Single switch
● N channel
● Enhancement mode
● Package with insulated metal base plate
1)
● Package outline/Circuit diagram: 1
Maximum Ratings
1)
See chapter Package Outline and Circuit Diagrams.
2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 800 – –
Gate threshold voltage VGS(th)
VDS = VGS, ID = 1 mA 2.1 3.0 4.0
Zero gate voltage drain current I DSS µA
VDS = 800 V, VGS = 0
Tj = 25 ˚C – 50 250
Tj = 125 ˚C – 300 1000
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 – 10 100
Drain-source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 23 A – 0.18 0.24
Dynamic Characteristics
Forward transconductance gfs 15 25 – S
VDS ≥ 2 × ID × RDS(on)max., ID = 23 A
Input capacitance Ciss – 24 32 nF
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance Coss – 1.3 2.0
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss – 0.5 0.8
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton (ton = td (on) + tr) td (on) – 60 – ns
VCC = 400 V, VGS = 10 V
tr – 30 –
ID = 23 A, RGS = 3.3 Ω
Turn-off time toff (toff = td (off) + tf) td (off) – 370 –
VCC = 400 V, VGS = 10 V
tf – 70 –
ID = 23 A, RGS = 3.3 Ω
Semiconductor Group 58
BSM 181
BSM 181 R
Reverse diode
Continuous reverse drain current IS A
TC = 25 ˚C – – 36
Pulsed reverse drain current ISM
TC = 25 ˚C – – 144
Diode forward on-voltage VSD V
IF = 72 A , VGS = 0 – 1.1 1.4
Reverse recovery time trr ns
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
Tj = 25 ˚C – 1200 –
Tj = 150 ˚C – – –
Reverse recovery charge Qrr µC
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
Tj = 25 ˚C – 42 –
Tj = 150 ˚C – 50 –
Semiconductor Group 59
BSM 181
BSM 181 R
Semiconductor Group 60
BSM 181
BSM 181 R
Semiconductor Group 61
BSM 181
BSM 181 R
Forward characteristics of
reverse diode IF = f (VSD)
parameter: Tj, tp = 80 µs (spread)
Semiconductor Group 62
BSM 181
BSM 181 R
Semiconductor Group 63
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