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    FXN32N55T: General Description Features

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    charly36
    The FXN32N55T is a high-performance MOSFET from Fuxin Semiconductor that provides high current capacity of 32A, low on-resistance of 130mΩ, and high operating temperature of 150°C. It uses advanced silicon MOSFET technology suitable for industrial applications like power supplies, motor drives, and DC/DC converters. Key specifications include a 550V drain-source breakdown voltage, 100% testing of important parameters, and fast switching times below 150ns.

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    FXN32N55T: General Description Features

    Uploaded by

    charly36
    279 views5 pages
    The FXN32N55T is a high-performance MOSFET from Fuxin Semiconductor that provides high current capacity of 32A, low on-resistance of 130mΩ, and high operating temperature of 150°C. It uses advanced silicon MOSFET technology suitable for industrial applications like power supplies, motor drives, and DC/DC converters. Key specifications include a 550V drain-source breakdown voltage, 100% testing of important parameters, and fast switching times below 150ns.

    Original Description:

    Naranjas

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    4_5911536717847857321

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    The FXN32N55T is a high-performance MOSFET from Fuxin Semiconductor that provides high current capacity of 32A, low on-resistance of 130mΩ, and high operating temperature of 150°C. It uses advanced silicon MOSFET technology suitable for industrial applications like power supplies, motor drives, and DC/DC converters. Key specifications include a 550V drain-source breakdown voltage, 100% testing of important parameters, and fast switching times below 150ns.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    279 views5 pages

    FXN32N55T: General Description Features

    Uploaded by

    charly36
    The FXN32N55T is a high-performance MOSFET from Fuxin Semiconductor that provides high current capacity of 32A, low on-resistance of 130mΩ, and high operating temperature of 150°C. It uses advanced silicon MOSFET technology suitable for industrial applications like power supplies, motor drives, and DC/DC converters. Key specifications include a 550V drain-source breakdown voltage, 100% testing of important parameters, and fast switching times below 150ns.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    複芯半導體有限公司

    FuXin Semiconductor Co., Ltd.

    FXN32N55T Rev.A

    General Description Features


    The FXN32N55T uses advanced Silicon’s MOSFET Technology, VDS = 550V
    ID = 32A @VGS = 10V
    which provides high performance in on-state resistance, fast
    Very low on-resistance
    switching performance, and excellent quality.
    RDS(ON) < 130mΩ @VGS = 10V
    These devices can also be utilized in industrial applications 100% UIL Tested
    such as so power, miner power, DC/DC converter, 100% Rg Tested
    and general purpose applications. 150C operating temperatureo

    Schematic Diagram
    TO-247 Top View

    Absolute Maximum Ratings (TJ = 25 oC)

    Characteristics Symbol Rating Unit


    Drain-Source Voltage VDSS 550 V
    Gate-Source Voltage VGSS ±30 V
    TC=25。 C (Silicon Limited) 32
    Continuous Drain Current(1) ID
    TC=25 。C (Package Limited) 32
    A
    TC=100。C (Silicon Limited) 23
    Pulsed Drain Current (2) IDM 128
    TC=25。C (Silicon Limited) 350
    Power Dissipation PD W
    CTc=25。C (Package Limited) 320
    Single Pulse Avalanche Energy (3) EAS 2200 mJ
    Junction and Storage Temperature Range TJ, Tstg -55~150 o
    C
    Thermal Characteristics
    Characteristics Symbol Rating Unit
    Thermal Resistance, Junction-to-Ambient RθJA 54
    o
    Thermal Resistance, Junction-to-Case (1) RθJC 0.36 C/W
    FXN32N55T

    Electrical Characteristics (TJ =25oC)


    Characteristics Symbol Test Condition Min Typ Max Unit
    Static Characteristics
    Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 550 - -
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
    Drain Cut-Off Current IDSS VDS = 550V, VGS = 0V - - 1.0
    μA
    Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - ±0.1
    Drain-Source ON Resistance RDS(ON) VGS = 10V, ID=32A - 110 130 mΩ
    Forward Transconductance gfs VDS = 10V, ID = 15A - 35 - S
    Dynamic Characteristics
    Total Gate Charge Qg - 110 150
    VDS = 400V, ID = 32A,
    Gate-Source Charge Qgs - 25 - nC
    Qgd VGS = 10V - -
    Gate-Drain Charge 50
    Input Capacitance Ciss - 4050 4350
    VDS = 30V, VGS = 0V, pF
    Reverse Transfer Capacitance Crss - 120 145
    Output Capacitance Coss f = 1.0MHz - 520 570
    Turn-On Delay Time td(on) - 35 50
    Rise Time tr - 120 150
    VGS = 10V, VDS = 400V, ns
    Turn-Off Delay Time td(off) - 105 150
    tf ID = 32A , RG = 12Ω - 100
    Fall Time 75
    Gate Resistance Rg f=1 MHz - Ω
    Drain-Source Body Diode Characteristics
    Source-Drain Diode Forward Voltage VSD IS = 32A, VGS = 0V - 0.9 1.2 V
    Body Diode Reverse Recovery Time trr - 920 - ns
    IF = 32A, dl/dt = 100A/μs
    Body Diode Reverse Recovery Charge Qrr - 2.6 - uC

    Note :
    1. Surface mounted FR-4 board by JEDEC (jesd51-7)

    2. Pulse width limited by TJmax

    3 EAS is tested at starting Tj = 25℃, L = 10mH, IAS = 32A, VGS = 10V

    2
    FXN32N55T

    Figure 1. Output Characteristics at 25 Figure 2. Output Characteristics at 125 C

    Figure 3. RDS(on) normalized to 15A/25 Figure 4. RDS(on) normalized to


    C vs. ID 15A/25 C vs. TJ

    3
    FXN32N55T

    Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

    Figure 7. Gate Charge Figure 8. Capacitance Curves

    4
    FXN32N55T

    Figure 9. Forward Voltage Drop of the Intrinsic Diode

    Figure 10. Transient Thermal Resistance

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