STGW45HF60WD

45 A, 600 V ultra fast IGBT

Preliminary data

Features
■ Improved Eoff at elevated temperature
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Ultra fast soft recovery antiparallel diode

Applications 3
2
■ Welding 1
■ High frequency converters TO-247
■ Power factor correction

Description
The "HF" series is based on a new planar
Figure 1. Internal schematic diagram
technology concept to yield an IGBT with tighter
variation of switching energy (Eoff) versus
temperature. Suffix "W" denotes a subset of
products tailored to high switching frequency
operation over 100 kHz.

Table 1. Device summary

Order code Marking Package Packaging

STGW45HF60WD GW45HF60WD TO-247 Tube

August 2009 Doc ID 15593 Rev 2 1/9

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 9
change without notice.
Electrical ratings STGW45HF60WD

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

(1)
IC Continuous collector current at TC = 25 °C 70 A
(1)
IC Continuous collector current at TC = 100 °C 45 A
ICP(2) Collector current (pulsed) TBD A
(3)
ICL Turn-off latching current TBD A
VGE Gate-emitter voltage ± 20 V
IF Diode RMS forward current at TC = 25 °C 30 A
IFSM Surge not repetitive forward current tp= 10 ms sinusoidal 120 A
PTOT Total dissipation at TC = 25 °C 250 W
Tstg Storage temperature
– 55 to 150 °C
Tj Operating junction temperature
1. Calculated according to the iterative formula:

T j ( max ) – T C
I C ( T C ) = ---------------------------------------------------------------------------------------------------------
-
R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )

2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Thermal resistance junction-case IGBT 0.5 °C/W

Rthj-case
Thermal resistance junction-case diode 1.5 °C/W
Rthj-amb Thermal resistance junction-ambient 50 °C/W

2/9 Doc ID 15593 Rev 2

STGW45HF60WD Electrical characteristics

2 Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
V(BR)CES breakdown voltage IC = 1 mA 600 V
(VGE = 0)
Collector-emitter saturation VGE = 15 V, IC= 30 A 1.9 2.5 V
VCE(sat)
voltage VGE = 15V, IC = 30 A,TJ= 125 °C TBD V
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 3.75 5.75 V

Collector cut-off current VCE = 600 V 500 µA

ICES
(VGE = 0) VCE = 600 V, TJ = 125 °C 5 mA
Gate-emitter leakage
IGES VGE = ±20 V ± 100 nA
current (VCE = 0)
gfs Forward transconductance VCE = 15 V, IC = 30 A TBD S

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Cies TBD pF
Output capacitance VCE = 25 V, f = 1 MHz,
Coes - TBD - pF
Reverse transfer VGE = 0
Cres TBD pF
capacitance
Qg Total gate charge VCE = 390 V, IC = 30 A, TBD nC
Qge Gate-emitter charge VGE = 15 V, - TBD - nC
Qgc Gate-collector charge Figure 3 TBD nC

Doc ID 15593 Rev 2 3/9

Electrical characteristics STGW45HF60WD

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 390 V, IC = 30 A TBD ns

tr Current rise time RG = 4.7 Ω, VGE = 15 V, - TBD - ns
(di/dt)on Turn-on current slope Figure 2 TBD A/µs
td(on) Turn-on delay time VCC = 390 V, IC = 30 A TBD ns
tr Current rise time RG = 4.7 Ω, VGE = 15 V, - TBD - ns
(di/dt)on Turn-on current slope TJ = 125 °C Figure 2 TBD A/µs
tr(Voff) Off voltage rise time VCC = 390 V, IC = 30 A, TBD ns
td(off) Turn-off delay time RGE = 4.7 Ω, VGE = 15 V - TBD - ns
tf Current fall time Figure 2 TBD ns
VCC = 390 V, IC = 30 A,
tr(Voff) Off voltage rise time TBD ns
RGE = 4.7 Ω, VGE =15 V,
td(off) Turn-off delay time - TBD - ns
TJ = 125 °C
tf Current fall time TBD ns
Figure 2

Table 7. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon(1) Turn-on switching losses VCC = 390 V, IC = 30 A 300 µJ

Eoff Turn-off switching losses RG = 4.7 Ω, VGE = 15 V, - 330 µJ
Ets Total switching losses Figure 4 630 µJ
Eon(1) Turn-on switching losses VCC = 390 V, IC = 30 A 550 µJ
Eoff Turn-off switching losses RG = 4.7 Ω, VGE = 15 V, - 550 800 µJ
Ets Total switching losses TJ = 125 °C Figure 4 1100 µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 4. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.

Table 8. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

IF = 30 A 1.6 V
VF Forward on-voltage - -
IF = 30 A, TJ = 125 °C 1.4 V
trr Reverse recovery time IF = 30 A,VR = 50 V, 45 ns
Qrr Reverse recovery charge di/dt = 100 A/µs - 56 - nC
Irrm Reverse recovery current (see Figure 5) 2.55 A
trr Reverse recovery time IF = 30 A,VR = 50 V, 100 ns
Qrr Reverse recovery charge di/dt = 100 A/µs - 290 - nC
Irrm Reverse recovery current TJ =125 °C, (see Figure 5) 5.8 A

4/9 Doc ID 15593 Rev 2

STGW45HF60WD Test circuits

3 Test circuits

Figure 2. Test circuit for inductive load Figure 3. Gate charge test circuit
switching

AM01504v1 AM01505v1

Figure 4. Switching waveform Figure 5. Diode recovery time waveform

90% di/dt Qrr

VG 10%
IF trr
90%
ta tb
VCE Tr(Voff)
10%
Tcross t
90%
IRRM IRRM
IC Td(off)
10%
Td(on) Tf
Tr(Ion)
Toff
Ton

VF
di/dt

AM01506v1 AM01507v1

Doc ID 15593 Rev 2 5/9

Package mechanical data STGW45HF60WD

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

6/9 Doc ID 15593 Rev 2

STGW45HF60WD Package mechanical data

TO-247 Mechanical data

Dim. mm.
Min. Typ Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50

Doc ID 15593 Rev 2 7/9

Revision history STGW45HF60WD

5 Revision history

Table 9. Document revision history

Date Revision Changes

16-Apr-2009 1 Initial release.

– Modified IC value on Test conditions Table 4
04-Aug-2009 2
– Modified RG value on Test conditions Table 6 and Table 7

8/9 Doc ID 15593 Rev 2

STGW45HF60WD

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Doc ID 15593 Rev 2 9/9