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    Irfbc30 1

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    gabriela69s
    This document provides information about the IRFBC30 power MOSFET from Vishay. It is a 600V N-channel MOSFET in a TO-220AB package. Key features include a low on-resistance of 2.2 ohms, fast switching speeds, repetitive avalanche rating, and ease of paralleling. The document provides product specifications, electrical characteristics, and ordering information for this MOSFET.

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    © All Rights Reserved
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    Irfbc30 1

    Uploaded by

    gabriela69s
    23 views1 page
    This document provides information about the IRFBC30 power MOSFET from Vishay. It is a 600V N-channel MOSFET in a TO-220AB package. Key features include a low on-resistance of 2.2 ohms, fast switching speeds, repetitive avalanche rating, and ease of paralleling. The document provides product specifications, electrical characteristics, and ordering information for this MOSFET.

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    IRFBC30-1

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    This document provides information about the IRFBC30 power MOSFET from Vishay. It is a 600V N-channel MOSFET in a TO-220AB package. Key features include a low on-resistance of 2.2 ohms, fast switching speeds, repetitive avalanche rating, and ease of paralleling. The document provides product specifications, electrical characteristics, and ordering information for this MOSFET.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views1 page

    Irfbc30 1

    Uploaded by

    gabriela69s
    This document provides information about the IRFBC30 power MOSFET from Vishay. It is a 600V N-channel MOSFET in a TO-220AB package. Key features include a low on-resistance of 2.2 ohms, fast switching speeds, repetitive avalanche rating, and ease of paralleling. The document provides product specifications, electrical characteristics, and ordering information for this MOSFET.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    IRFBC30

    www.vishay.com
    Vishay Siliconix
    Power MOSFET
    D
    FEATURES
    • Dynamic dV/dt rating
    TO-220AB Available
    • Repetitive avalanche rated
    • Fast switching Available

    G • Ease of paralleling
    • Simple drive requirements
    S • Material categorization: for definitions of compliance
    D
    S
    please see www.vishay.com/doc?99912
    G
    Note
    N-Channel MOSFET * This datasheet provides information about parts that are
    RoHS-compliant and / or parts that are non RoHS-compliant. For
    example, parts with lead (Pb) terminations are not RoHS-compliant.
    Please see the information / tables in this datasheet for details
    PRODUCT SUMMARY
    VDS (V) 600 DESCRIPTION
    RDS(on) (Ω) VGS = 10 V 2.2
    Third generation power MOSFETs from Vishay provide the
    Qg max. (nC) 31 designer with the best combination of fast switching,
    Qgs (nC) 4.6 ruggedized device design, low on-resistance and
    Qgd (nC) 17 cost-effectiveness.
    Configuration Single The TO-220AB package is universally preferred for all
    commercial-industrial applications at power dissipation
    levels to approximately 50 W. The low thermal resistance
    and low package cost of the TO-220AB contribute to its
    wide acceptance throughout the industry.

    ORDERING INFORMATION
    Package TO-220AB
    Lead (Pb)-free IRFBC30PbF
    Lead (Pb)-free and halogen-free IRFBC30PbF-BE3

    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)


    PARAMETER SYMBOL LIMIT UNIT
    Drain-source voltage VDS 600
    V
    Gate-source voltage VGS ± 20
    TC = 25 °C 3.6
    Continuous drain current VGS at 10 V ID
    TC = 100 °C 2.3 A
    Pulsed drain current a IDM 14
    Linear derating factor 0.59 W/°C
    Single pulse avalanche energy b EAS 290 mJ
    Repetitive avalanche current a IAR 3.6 A
    Repetitive avalanche energy a EAR 7.4 mJ
    Maximum power dissipation TC = 25 °C PD 74 W
    Peak diode recovery dV/dt c dV/dt 3.0 V/ns
    Operating junction and storage temperature range TJ, Tstg -55 to +150
    °C
    Soldering recommendations (peak temperature) d For 10 s 300
    10 lbf · in
    Mounting torque 6-32 or M3 screw
    1.1 N·m
    Notes
    a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
    b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12)
    c. ISD ≤ 3.6 A, dI/dt ≤ 60 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
    d. 1.6 mm from case

    S21-0868-Rev. C, 16-Aug-2021 1 Document Number: 91110


    For technical questions, contact: [email protected]
    THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
    ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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