IRFP460, SiHFP460

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 500
RDS(on) (Ω) VGS = 10 V 0.27 • Repetitive Avalanche Rated Available

Qg (Max.) (nC) 210 • Isolated Central Mounting Hole RoHS*

COMPLIANT
Qgs (nC) 29 • Fast Switching
Qgd (nC) 110 • Ease of Paralleling
Configuration Single • Simple Drive Requirements
D • Lead (Pb)-free Available
TO-247
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
G
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S The TO-247 package is preferred for commercial-industrial
D
G S applications where higher power levels preclude the use of
N-Channel MOSFET TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.

ORDERING INFORMATION
Package TO-247
IRFP460PbF
Lead (Pb)-free
SiHFP460-E3
IRFP460
SnPb
SiHFP460

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 20
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 13 A
Pulsed Drain Currenta IDM 80
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energyb EAS 960 mJ
Repetitive Avalanche Currenta IAR 20 A
Repetitive Avalanche Energya EAR 28 mJ
Maximum Power Dissipation TC = 25 °C PD 280 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91237 www.vishay.com

S-81360-Rev. A, 28-Jul-08 1
IRFP460, SiHFP460
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40
Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 0.45

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 500 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 Ab - - 0.27 Ω
Forward Transconductance gfs VDS = 50 V, ID = 12 Ab 13 - - S
Dynamic
Input Capacitance Ciss - 4200 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 870 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 350 -
Total Gate Charge Qg - - 210
ID = 20 A, VDS = 400 V
Gate-Source Charge Qgs VGS = 10 V - - 29 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 110
Turn-On Delay Time td(on) - 18 -
Rise Time tr - 59 -
VDD = 250 V, ID = 20 A , ns
Turn-Off Delay Time td(off) RG = 4.3 Ω, RD = 13 Ω, see fig. 10b - 110 -
Fall Time tf - 58 -

Internal Drain Inductance LD Between lead, D

- 5.0 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 13 -
S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 20
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S
- - 80

Body Diode Voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb - - 1.8 V

Body Diode Reverse Recovery Time trr - 570 860 ns
TJ = 25 °C, IF = 20A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 5.7 8.6 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91237

2 S-81360-Rev. A, 28-Jul-08
 IRFP460, SiHFP460
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

VGS
Top 15 V
10 V
8.0 V
7.0 V

ID, Drain Current (A)

ID, Drain Current (A)

6.0 V
150 °C
5.5 V
5.0 V
Bottom 4.5 V
101
101
25 °C
4.5 V

20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C 100 VDS = 50 V
100
100 101 4 5 6 7 8 9 10

91237_01 VDS, Drain-to-Source Voltage (V) 91237_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

3.5
RDS(on), Drain-to-Source On Resistance

VGS ID = 20 A
Top 15 V VGS = 10 V
10 V 3.0
8.0 V
ID, Drain Current (A)

7.0 V 2.5
6.0 V
(Normalized)

5.5 V 4.5 V
101 2.0
5.0 V
Bottom 4.5 V
1.5

1.0

0.5
20 µs Pulse Width
TC = 150 °C
100 0.0
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91237_02 VDS, Drain-to-Source Voltage (V) 91237_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91237 www.vishay.com

S-81360-Rev. A, 28-Jul-08 3
IRFP460, SiHFP460
Vishay Siliconix

10 000 102
VGS = 0 V, f = 1 MHz

ISD, Reverse Drain Current (A)

Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
8000
Coss = Cds + Cgd
Capacitance (pF)

6000
Ciss

4000 150 °C

Coss 25 °C
2000

Crss VGS = 0 V
0 101
100 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

91237_05 VDS, Drain-to-Source Voltage (V) 91237_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 20 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)

5
VDS = 400 V by RDS(on)
16 2
ID, Drain Current (A)

VDS = 250 V
102
12 5 10 µs
VDS = 100 V
2
8 100 µs
10
5
4 1 ms
TC = 25 °C
For test circuit 2 TJ = 150 °C
Single Pulse 10 ms
see figure 13
0 1 2 5 2 5 2 5
0 40 80 120 160 200 1 10 102 103

91237_06 QG, Total Gate Charge (nC) 91237_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91237

4 S-81360-Rev. A, 28-Jul-08
 IRFP460, SiHFP460
Vishay Siliconix

RD
VDS

VGS
D.U.T.
20 RG
+
- VDD

16 10 V
ID, Drain Current (A)

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
12
Fig. 10a - Switching Time Test Circuit
8

VDS
4 90 %

0
25 50 75 100 125 150
10 %
91237_09 TC, Case Temperature (°C)
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

1
Thermal Response (ZthJC)

0 - 0.5

0.1 0.2
0.1
0.05 PDM
0.02 Single Pulse
0.01 (Thermal Response)
10-2 t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5 10-4 10-3 10-2 0.1 1 10

91237_11 t1, Rectangular Pulse Duration (S)

Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
RG D.U.T +
V DD
- VDS
IAS A
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91237 www.vishay.com

S-81360-Rev. A, 28-Jul-08 5
IRFP460, SiHFP460
Vishay Siliconix

2400
ID
Top 8.9 A

EAS, Single Pulse Energy (mJ)

2000 13 A
Bottom 20 A
1600

1200

800

400

VDD = 50 V
0
25 50 75 100 125 150

91237_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

QG
10 V

QGS QGD

VG

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator
Same type as D.U.T.

50 kΩ

12 V 0.2 µF
0.3 µF

+
VDS
D.U.T. -

VGS

3 mA

IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91237

6 S-81360-Rev. A, 28-Jul-08
 IRFP460, SiHFP460
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91237.

Document Number: 91237 www.vishay.com

S-81360-Rev. A, 28-Jul-08 7
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1