Stf7N60M2: N-Channel 600 V, 0.86 Typ., 5 A Mdmesh Ii Plus™ Low Q Power Mosfet in To-220Fp Package
Stf7N60M2: N-Channel 600 V, 0.86 Typ., 5 A Mdmesh Ii Plus™ Low Q Power Mosfet in To-220Fp Package
Stf7N60M2: N-Channel 600 V, 0.86 Typ., 5 A Mdmesh Ii Plus™ Low Q Power Mosfet in To-220Fp Package
Features
VDS @ RDS(on)
Order code ID
TJmax max
STF7N60M2 650 V 0.95 Ω 5A
Applications
Figure 1. Internal schematic diagram
• Switching applications
, TAB
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1 Electrical ratings
2 Electrical characteristics
Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage
Zero gate voltage VDS = 600 V 1 µA
IDSS
drain current (VGS = 0) VDS = 600 V, TC=125 °C 100 µA
Gate-body leakage
IGSS VGS = ± 25 V ±10 µA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source
RDS(on) VGS = 10 V, ID = 2.5 A 0.86 0.95 Ω
on-resistance
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
10
s
ai 10µs
re n)
is a DS(o
th R
n
in ax 100µs
1 tio y m
a b
er ed
Op mit
Li 1ms
Tj=150°C 10ms
0.1 Tc=25°C
Single pulse
0.01
0.1 1 10 100 VDS(V)
5 5
4 4
5V
3 3
2 2
1 1
4V
0 3V 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)
200 0.860
4
0.850
100
2
0.840
0 0 0.830
0 2 4 6 8 10 Qg(nC) 0 1 2 3 4 5 ID(A)
1000
Ciss 2
100
10 Coss
1
1
Crss
0.1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs.
vs. temperature temperature
AM15718v1 AM15821v1
VGS(th) RDS(on)
(norm)
(norm)
1.1 ID=2.5 A
ID=250µA 2.3
2.1
1.0 1.9
1.7
0.9
1.5
1.3
0.8
1.1
0.7 0.9
0.7
0.6 0.5
-50 0 50 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)
Figure 12. Drain-source diode forward Figure 13. Normalized VDS vs. temperature
characteristics
AM15822v1 AM15823v1
VSD VDS
(V) (norm)
1.4 1.11
ID = 1mA
1.09
1.2
TJ=-50°C 1.07
1 1.05
0.8 1.03
0.6 1.01
TJ=150°C TJ=25°C
0.99
0.4
0.97
0.2 0.95
0 0.93
0 1 2 3 4 5 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)
3 Test circuits
Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
PW 1kΩ
AM01468v1 AM01469v1
Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit
switching and diode recovery times
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
9%5'66 ton toff
tr tdoff tf
9' tdon
90% 90%
,'0
10%
,' 10% VDS
0
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K_B
5 Revision history
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